Room temperature photoelectric NO2 gas sensor based on direct growth of walnut like In2O3 nanostructures
Abstract Direct growth of walnut like In2O3 nanostructures on the interdigited electrode substrate have been acquired via a facile hydrothermal approach, followed by an appropriate thermal treatment. The morphologies of the synthesized In2O3 are investigated and the growth mechanism of the In2O3 film is proposed. Observation of the individual walnut like In2O3 indicates the elegant architecture is composed of few dents and prisms. The synthesized walnut like In2O3 nanostructures is exploited to fabricate a photoelectric gas sensor that exhibits an ultrahigh sensitivity (219) to 50 ppm NO2 with irradiation of UV light (l 365 nm) of 1.2 mW/cm2. The stability and selectivity of walnut like In2O3 nanostructures were carried out. The photoelectronic gas sensing mechanisms of In2O3 were proposed in detail to understand the effect of UV irradiation in the NO2 detection process.
Journal of Alloys and Compounds