Effect of Drain Doping Profile on Double Gate Tunnel Field Effect Transistor and its Influence on Device RF Performance
In this paper, we have investigated the effect of drain doping profile on a double gate tunnel field effect transistor (DG TFET) and its radio frequency (RF) performances. Lateral asymmetric drain doping profile suppresses the ambipolar behavior, improves OFF state current, reduces the gate drain capacitance, and improves the RF performance. Further, placing the high density layer in the channel near the source channel junction, a reduction in the width of depletion region, improvement in ON state current (ION) and subthreshold slope are analyzed for this asymmetric drain doping. However, it also improves many RF figures of merit for the DG TFET. Furthermore, lateral asymmetric doping effects on RF performances are also checked for the various channel length. Therefore, this paper would be beneficial for a new generation of RF circuits and systems in a broad range of applications and operating frequencies covering RF spectrum. So, the RF figures of merit for the DG TFET are analyzed in terms of transconductance (gm) unit gain cutoff frequency (fT) maximum frequency of oscillation (fmax) and gain bandwidth product. For this, the RF figures of merit have been extracted from the V parameter matrix generated by performing the small signal ac analysis. Technology computer aided design simulations have been performed by 2 D ATLAS, Silvaco International, Santa Clara, CA, USA.
IEEE Transactions on Nanotechnology