A D band Monolithic Low Noise Amplifier on InP HEMT Technology
In this paper, a D band monolithic microwave integrated circuit low noise amplifier (LNA) is designed by using $0.5 \mu\mathbf{m} InP high electron mobility transistor (HEMT) technology. The circuit is mainly composed of five stage of common source amplification structure, and resistance and capacitance are connected in series to form a feedback network, which can improve the stability of the circuit. The series resistance and parallel grounding capacitance on the DC bias circuit constitute a low pass structure, which is to absorb the gain of the circuit at low frequency, prevent the circuit from self oscillation. In the 120 150GHz frequency range, the simulated gain is above 18.5 dB, and the noise figure is lower than 4.5dB. The area of this chip is $1.12\times 0.62\mathbf{mm}{2} and the power consumption of the whole circuit is 47mW.
2018 12th International Symposium on Antennas, Propagation and EM Theory (ISAPE)