High Performance p GaN/Oxide Layer/n GaN Ultraviolet Detector Fabricated by Directly Contacting Method.
High performance p GaN/oxide layer/n GaN ultraviolet (UV) photodetector was fabricated in this paper. The UV detector composed of n GaN and p GaN film with oxide layer which was constructed by directly contacting way. The detector based on GaN p GaN/oxide layer/n GaN structure showed high UV response with fast speed. The results indicated that the fabrication of large scale GaNbased materials was greatly facilitated with relatively low cost contacting method. Furthermore, it offered a new method to obtain UV detector for GaN based materials with high performance.
Journal of nanoscience and nanotechnology