Study of MacEtch using Additives for Preparation of TSV
Preparation of vertical and deep holes in Si (100) substrates for TSV application was demonstrated using a wet chemical process, which was metal assisted chemical etching (MacEtch) of Si, instead of traditional dry etching process. Moreover, the effect of polarity of additives in the etching solution on the morphology of etched Si were investigated. Benzalkonium chloride (BKC) sodium lauryl sulfate (SLS) and polyethylene glycol (PEG) which were anionic, cationic and non polar surfactant, respectively, were used as the additive for the etching solutions. It is found that the addition of surfactant agents in the etching solution improves etching morphology of Si, regardless of polarity of the surfactants.
2019 International 3D Systems Integration Conference (3DIC)