High gain phototransistors based on a CVD MoS2 monolayer.
A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W( 1) and an excellent photogain (5000) The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p dopants to MoS2 decreasing the carrier mobility, photoresponsivity, and photogain.
Advanced materials