Time resolved photoluminescence imaging with electronic shuttering using an image intensifier unit
Abstract In contrast to traditional steady state photoluminescence imaging (PLI) time resolved photoluminescence imaging (TR PLI) allows for a calibration free measurement of the effective transient minority charge carrier lifetime t eff in a silicon sample. For transient photoluminescence measurements, the illumination source as well as the camera signal have to be modulated on a time scale in the order of t eff Different approaches for camera signal modulation have been presented, including the use of a complementary metal oxide semiconductor (CMOS) camera or a rotating shutter wheel. In this work, the use of an InGaAs based image intensifier unit as a fast optical shutter for TR PLI was evaluated. Due to the fast switching times of the image intensifier, effective lifetimes down to 1/50 of the modulation period could be resolved reliably. Measurements under different illumination conditions allow for an injection dependant analysis of t eff and comparison to photoconductance decay measurements.