Non linear electro thermal AlGaN/GaN model including large signal dynamic thermal trapping effects
This paper presents a non linear electro thermal AlGaN/GaN model for CAD application with a new additive thermal trap model to take into account the dynamic behavior of trap states and their associated temperature variation. The thermal trap model is extracted through low frequency small signal CW S parameter measurements and large signal pulsed RF measurements at different temperatures. This thermal trap model allows accurately predicting the physical temperature activation of traps and also the thermal signature of traps. It is also demonstrated that extrapolation of trap model parameters by stretched multi exponential function of drain current transient measurements during pulsed RF excitations allows deeply improving the envelope simulations.
2016 IEEE MTT S International Microwave Symposium (IMS)