Modeling of CZTSSe solar photovoltaic cell for window layer optimization
Abstract Large and long term future development of solar cells requires abundant non toxic material like silicon. CZTSSe has emerged as next generation solar material with an excellent candidate having better performance than previously studied compounds. This material is a non toxic material available on earth that shows an acceptable bandage for showing eminent performance in the field of solar cells. The effect of different window layers on the electrical parameters of the solar cell has been investigated in present work. The thickness of the absorber layer, the window layer, the buffer layer and the doping concentration of absorber and buffer layer have been examined for the device structure Al: ZnO TiO2 ZnMgO ZnO CdS CZTSSe Mo of the solar cell. The present study also reveals that Al: ZnO is a better choice for the manufacturing of window layer in CZTSe solar cells. The solar cell parameters such as doping concentration, thickness and temperature have been optimized in the present study. The use of optimum values of solar cell parameters results in maximum optimized efficiency. The numerical simulation in this work presents a new approach to enhance the conversion efficiency of the CZTSSe solar cell. The proposed device structure may assist for experimental work. It is also expected that the present findings will be of great interest to experimentalists working in this field.