Germanium Tin Semiconductors for Silicon Compatible Mid Infrared Photonics
GeSn alloys have recently been the subject of extensive investigations as a new platform to engineer the band structure and directness in group IV semiconductors thus providing a rich playground to implement silicon compatible photonics and optoelectronics. Herein, we discuss the growth of these metastable semiconductors and their use in a variety of silicon compatible devices. We will also discuss the effects of strain and Sn content on the optical, electronic, and structural properties of Sn rich group IV semiconductors. Comments and questions should be directed to the OSA Conference Papers staff (tel: 1 202.416.6191, e mail: cstech@osa.org) (c) 2019 The Author(s)
2019 Conference on Lasers and Electro Optics (CLEO)