Influence of por Si sublayer on the features of heteroepitaxial growth and physical properties of InxGa1 xN/Si(111) heterostructures with nanocolumn morphology of thin film
Abstract Integrated heterostructures with a nanocolumn morphology of the film InxGa1 xN were grown using the method of molecular beam epitaxy, with plasm activation of nitrogen on a monocrystalline silicon substrate s Si(111) and c Si(111) substrate with a nanoporous buffer sublayer (por Si) By means of a complex of structural and spectroscopy analysis methods, it was shown that the growth of InxGa1 xN nanocolumns on a nanoporous buffer substrate has numerous advantages compared to when c Si is used. The por Si substrate largely contributes to the orientation of the growth of the InxGa1 xN nanocolumns closer to that of Si(111) allowing the InxGa1 xN nanocolumns to be obtained with a higher crystallographic uniformity and a unified lateral size along the entire surface of ~40 nm. In addition, the growth of the InxGa1 xN columns on por Si results in a decrease in the deformation component e xx and e zz as well as the density of edge and screw dislocations compared to similar coefficients for the InxGa1 xN nanocolumns grown on c Si. Furthermore, the nanocolumn InxGa1 xN obtained using por Si substrate has a higher carrier charge concentration +20% compared to that grown using c Si, as well as a higher intensity of a quantum yield of photoluminescence +25%