The IGBT is a recent component, so its performance improves regularly as technology evolves. It has already completely replaced the bipolar transistor in power applications; a power module is available in which several IGBT devices are connected in parallel, making it attractive for power levels up to several megawatts, which pushes further the limit at which thyristors and GTOs become the only option. Basically, an IGBT is a bipolar transistor driven by a power MOSFET; it has the advantages of being a minority carrier device (good performance in the on-state, even for high voltage devices), with the high input impedance of a MOSFET (it can be driven on or off with a very low amount of power).