Achieving a major improvement over the conventional MOSFET structure by employing the super junction charge-balance principle: essentially, it allows the thick drift region of a power MOSFET to be heavily doped, thereby reducing the electrical resistance to electron flow without compromising the breakdown voltage. This is juxtaposed with a region that is similarly doped with the opposite carrier polarity (holes); these two similar, but oppositely doped regions effectively cancel out their mobile charge and develop a 'depleted region' that supports the high voltage during the off-state. On the other hand, during the on-state, the higher doping of the drift region allows for the easy flow of carriers, thereby reducing on-resistance.