Since the early 1990s, Samsung Electronics has commercially introduced a number of new memory technologies.[39] They commercially introduced SDRAM (synchronous dynamic random-access memory) in 1992,[40][41] and later DDR SDRAM (double data rate SDRAM) and GDDR (graphics DDR) SGRAM (synchronous graphics RAM) in 1998.[42][43] In 2009, Samsung started mass-producing 30 nm-class NAND flash memory,[44] and in 2010 succeeded in mass-producing 30 nm class DRAM and 20 nm class NAND flash, both of which were for the first time in the world.[45] They also commercially introduced TLC (triple-level cell) NAND flash memory in 2010,[39] V-NAND flash in 2013,[46][47][48][49] LPDDR4 SDRAM in 2013,[39] HBM2 in 2016,[50][51] GDDR6 in January 2018,[52][53][54] and LPDDR5 in June 2018.[55]