Doped semiconductor materials display dilute ferromagnetism. In recent years, dilute magnetic oxides (DMOs) including ZnO based DMOs and TiO2-based DMOs have been the subject of numerous experimental and computational investigations.[22][23] Non-oxide ferromagnetic semiconductor sources (like manganese-doped gallium arsenide GaMnAs),[24] increase the interface resistance with a tunnel barrier,[25] or using hot-electron injection.[26]