The power MOSFET has the advantages of a majority carrier device, so it can achieve a very high operating frequency, but it cannot be used with high voltages; as it is a physical limit, no improvement is expected in the design of a silicon MOSFET concerning its maximum voltage ratings. However, its excellent performance in low voltage applications make it the device of choice (actually the only choice, currently) for applications with voltages below 200 V. By placing several devices in parallel, it is possible to increase the current rating of a switch. The MOSFET is particularly suited to this configuration, because its positive thermal coefficient of resistance tends to result in a balance of current between the individual devices.