A 25-nA Area-Efficient Temperature-Independent 176-/82-ppm/\degC CMOS-Only Current Reference in 011-$\mu$m Bulk and 22-nm FD-SOI
<|reference_start|>A 25-nA Area-Efficient Temperature-Independent 176-/82-ppm/\degC CMOS-Only Current Reference in 011-$\mu$m Bulk and 22-nm FD-SOI: Internet-of-Things (IoT) applications require nW-power current references that are robust to process, voltage and temperature (PVT) variations, to maintain the performance of IoT sensor nodes in a wide range of operating conditions. However, nA-range current references are rarely area-efficient due to the use of large gate-leakage transistors or resistors, which occupy a significant silicon area at this current level. In this paper, we introduce a nA-range constant-with-temperature (CWT) current reference, relying on a self-cascode MOSFET (SCM) biased by a four-transistor ultra-low-power voltage reference through a single-transistor buffer. The proposed reference includes a temperature coefficient (TC) calibration mechanism to maintain performance across process corners. In addition, as the proposed design relies on the body effect, it has been fabricated and measured in 0.11-$\mu$m bulk and 22-nm fully-depleted silicon-on-insulator (FD-SOI) to demonstrate feasibility in both technology types. On the one hand, the 0.11-$\mu$m design consumes a power of 16.8 nW at 1.2 V and achieves a 2.3-nA current with a line sensitivity (LS) of 2.23 %/V at 25{\deg}C and a TC of 176 ppm/{\deg}C at 1.2 V from -40 to 85{\deg}C. On the other hand, the 22-nm design consumes a power of 16.3 nW at 1.5 V and achieves a 2.5-nA current with a 1.53-%/V LS at 25{\deg}C and an 82-ppm/{\deg}C TC at 1.5 V from -40 to 85{\deg}C. Thanks to their simple architecture, the proposed references achieve a silicon area of 0.0106 mm$^2$ in 0.11 $\mu$m and 0.0026 mm$^2$ in 22 nm without compromising other figures of merit, and are thus competitive with state-of-the-art CWT references operating in the same current range.<|reference_end|>
@article{lefebvre2024a,
    title={A 2.5-nA Area-Efficient Temperature-Independent 176-/82-ppm/{\deg}C
  CMOS-Only Current Reference in 0.11-$\mu$m Bulk and 22-nm FD-SOI},
    author={Martin Lefebvre and David Bol},
    journal={IEEE Journal of Solid-State Circuits, vol. 59, no. 11, pp.
  3752-3766, Nov. 2024},
    year={2024},
    doi={10.1109/JSSC.2024.3402960},
    archivePrefix={arXiv},
    eprint={2406.04741},
    primaryClass={cs.AR}
}