Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate
<|reference_start|>Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate: In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-${V}_{TH}$ (HVT) state and the screening of the applied field by channel at the low-${V}_{TH}$ (LVT) state; ii) combined simulations and experimental demonstrations of dual-port design verify the disturb-free operation in a NAND string, overcoming a key challenge in single-port designs; iii) the proposed design can be incorporated in a highly scaled vertical NAND FeFET string and the pass gate can be incorporated into the existing 3D NAND with the negligible overhead of the pass gate interconnection through a global bottom pass gate contact in the substrate.<|reference_end|>
@article{zhao2024paving,
    title={Paving the Way for Pass Disturb Free Vertical NAND Storage via A
  Dedicated and String-Compatible Pass Gate},
    author={Zijian Zhao, Sola Woo, Khandker Akif Aabrar, Sharadindu Gopal
  Kirtania, Zhouhang Jiang, Shan Deng, Yi Xiao, Halid Mulaosmanovic, Stefan
  Duenkel, Dominik Kleimaier, Steven Soss, Sven Beyer, Rajiv Joshi, Scott
  Meninger, Mohamed Mohamed, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim,
  Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Suman Datta, Shimeng Yu, and
  Kai Ni},
    journal={arXiv preprint arXiv:2403.04981},
    year={2024},
    archivePrefix={arXiv},
    eprint={2403.04981},
    primaryClass={cs.ET}
}