Stochastic Nonlinear Dynamical Modelling of SRAM Bitcells in Retention Mode
<|reference_start|>Stochastic Nonlinear Dynamical Modelling of SRAM Bitcells in Retention Mode: SRAM bitcells in retention mode behave as autonomous stochastic nonlinear dynamical systems. From observation of variability-aware transient noise simulations, we provide an unidimensional model, fully characterizable by conventional deterministic SPICE simulations, insightfully explaining the mechanism of intrinsic noise-induced bit flips. The proposed model is exploited to, first, explain the reported inaccuracy of existing closed-form near-equilibrium formulas aimed at predicting the mean time to failure and, secondly, to propose a closer estimate attractive in terms of CPU time.<|reference_end|>
@article{van brandt2024stochastic,
    title={Stochastic Nonlinear Dynamical Modelling of SRAM Bitcells in Retention
  Mode},
    author={L'eopold Van Brandt, Denis Flandre and Jean-Charles Delvenne},
    journal={arXiv preprint arXiv:2402.11691},
    year={2024},
    archivePrefix={arXiv},
    eprint={2402.11691},
    primaryClass={cs.AR cs.CE}
}