Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering
<|reference_start|>Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering: We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction. The magnetic free layer of the memory device has perpendicular magnetic anisotropy and interfacial Dzyaloshinskii-Moriya interaction, so that spin-orbit torques induce efficient domain wall motion. Using micromagnetic simulations, we find two pinning mechanisms that lead to different cell designs: two-way switching and four-way switching. The memory cell design choices and the physics behind these pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic layer. Switching behavior and material choices will be discussed for the two implementations.<|reference_end|>
@article{zhang2024error-free,
    title={Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall
  Memory Enabled by Channel Meandering},
    author={Pengxiang Zhang, Wilfried Haensch, Charudatta M. Phatak, Supratik Guha},
    journal={arXiv preprint arXiv:2405.18261},
    year={2024},
    archivePrefix={arXiv},
    eprint={2405.18261},
    primaryClass={cs.ET cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph}
}