The present invention provides a superlattice memristor functional layer material, and a memristor unit comprising the superlattice memristor functional layer and a preparation method therefor. The superlattice memristor functional layer material is a laminated structured formed by alternately stacking at least a first metal oxide layer and a second metal oxide layer in a first plane direction. In the present invention, migration barriers of oxygen ions in two binary metal oxides are different, so that the resistance state of the memristor can be slowly and stably changed under a certain condition, a modulation effect on the on-off of an oxygen vacancy conductive filament is achieved, and the stability and consistency of the memristor are improved. In addition, the conductance of the memristor can continuously change along an external electric field, so that a synaptic characteristic that the conductance is continuously adjustable is achieved, and the synaptic linearity of cranial neuromorphic computing is improved. The present invention is of great significance to hardware implementation of storage fusion computing and neuromorphic computing.
SUPERLATTICE MEMRISTOR FUNCTIONAL LAYER MATERIAL, AND MEMRISTOR UNIT AND PREPARATION METHOD THEREFOR