Pixels for solid-state CMOS image sensor arrays may be provided that have a lateral blooming control structure incorporated in them. The lateral blooming control structure is built as a separate structure from the charge transfer gate and it is fabricated in a self-aligned manner, which is particularly suitable for incorporating into small size pixels. The blooming control structure can be used for backside or for front side illuminated image sensors. When the lateral blooming control structure is provided with a separate bias means, it may also be used for the complete or partial charge removal from the photodiode and thus used in pixels that are designed for global shutter operation.
Image sensor pixels with self-aligned lateral anti-blooming structures