The invention relates to pulse detection in memristor crossbar array embodiments for spiking neural networks. For example, an integrated circuit includes a crossbar array of first memristors connected between wordlines and bitlines. The first memristors are configured to convert voltages applied on the wordlines into currents in the bitlines. Second memristors having thresholds are connected to the bitlines respectively. Each respective memristor in the second memristors can reduce its resistance to cause spiking in a current flowing through the respective memristor, when the current reaches the threshold of the respective memristor. Current level detectors are connected to the second memristors to determine whether the currents in the bitlines have levels corresponding to reaching thresholds of the second memristors and thus, generate output spikes of spiking neurons without using analog-to-digital converters to measure the currents in the bitlines.
Pulse detection in memristor crossbar array embodiments for spiking neural networks