Systems and methods of use and fabrication are described for a non-volatile resistive random access memory (RRAM) multi-terminal device including a first electrode, a second electrode, a metal oxide disposed between the first electrode and the second electrode, and an at least first gate configured to apply a voltage bias to change a resistive state in the metal oxide. A method is included of integrating one or more of the non-volatile multi-terminal resistive random access memory (RRAM) devices into a crossbar array for a neuromorphic application including integrating a pre-neuron device into an input bar of the crossbar array and integrating a post-neuron device into an output bar of the crossbar array.
SYSTEMS AND METHODS FOR GATED-INSULATOR RECONFIGURABLE NON-VOLATILE MEMORY DEVICES