A neuromorphic device using a crossbar memory structure according to the first aspect of the present invention comprises: a plurality of gate electrodes extending in parallel with each other in a first direction; a plurality of drain electrodes extending in parallel with each other in the first direction; a plurality of source electrodes arranged to intersect the first direction between the gate electrodes and the drain electrodes, and extending in parallel with each other; tunneling insulation films sequentially stacked at the intersections of the gate electrodes and the source electrodes in a sequence according to the adjacencies of the tunneling insulation films to the source electrodes; a charge storage layer; gate insulation films; and n-type semiconductor layers and p-type semiconductor layers which are heterojunctioned as a channel layer at the intersections of the drain electrodes and the source electrodes, or an n-type or p-type single semiconductor layer, wherein the source electrodes function as pre-synaptic neuron connection terminals, the drain electrodes function as post-synaptic neuron connection terminals, and the gate electrodes perform a function of controlling synaptic weights by controlling the amount of charge stored in the charge storage layer.
NEUROMORPHIC DEVICE USING CROSSBAR MEMORY STRUCTURE