A memristive multi-terminal spiking neuron apparatus, comprising a non-volatile memristor, wherein the non- volatile memristor has a resistance ratio between the high-resistance and low-resistance states exceeding (4) decades of magnitude, wherein the non-volatile memristor retains its resistance states for a time period exceeding (1) second, a volatile memristor, wherein the volatile memristor retains its low-resistance state for a time period of less than (10) nanoseconds, and a capacitor, wherein the volatile memristor is in parallel with the capacitor. A method of making a programmable electrical spiking output from a memristive multi-terminal spiking neuron, comprising providing one or more devices wherein each device comprises a non-volatile memristor, a volatile memristor, wherein the volatile memristor is in parallel with the capacitor, providing a first input spiking signal to a neuron device, providing a second input spiking signal, and creating a programmable spiking output signal which changes.
MEMRISTIVE MULTI-TERMINAL SPIKING NEURON