A memristor element is disclosed. The memristor element comprises: a first electrode and a second electrode provided to face each other; and a resistance change layer provided between the first electrode and the second electrode, and formed of a mixture of a first organic-inorganic halogen compound having a crystal structure of a 2-D layered structure and a second organic-inorganic halogen compound having a 0-D hexagonal dimer crystal structure so that a bulk hetero-junction between the first organic-inorganic halogen compound and the second organic-inorganic halogen compound is formed therein.
MEMRISTOR ELEMENT AND NEUROMORPHIC DEVICE COMPRISING SAME