A method for manufacturing a nerve-stimulating and signal-monitoring device includes the steps of forming a first silicon oxide layer on a surface of a flexible substrate; forming a patterned doped p-type poly-silicon layer on the first silicon oxide layer; forming a second silicon oxide layer on the patterned doped p-type poly-silicon layer; forming a circuit layer on the second silicon oxide layer; forming a plurality of openings on the second silicon oxide layer; forming a gold layer on the circuit layer and on the plurality of contact pads on the patterned doped p-type poly-silicon layer; attaching a chip to the plurality of chip pads of the circuit layer by using a flip-chip bonding technology; forming a plurality of through holes on the at least one probe pad; and securely and correspondingly attaching a plurality of stimulation probes into the plurality of through holes.
MANUFACTURING METHOD OF NERVE-STIMULATING AND SIGNAL-MONITORING DEVICE