A carrier-depletion based silicon waveguide resonant cavity modulator is provided, wherein the modulator comprises a silicon waveguide based resonant cavity, the resonant cavity comprising an optical modulation section and an optical power monitoring section, wherein the optical power monitoring section comprises an integrated lateral PIN diode comprising a doping compensated I region having a high defect density and a low net free carrier concentration. The doping compensated I region may be formed by performing a P-type implantation step and an N-type implantation step with overlapping ion implantation windows.
Carrier-depletion based silicon waveguide resonant cavity modulator with integrated optical power monitor