An ultrathin, carbon-based memristor with a moiré superlattice potential shows prominent ferroelectric resistance switching. The memristor includes a bilayer material, such as Bernal-stacked bilayer graphene, encapsulated between two layers of a layered material, such as hexagonal boron nitride. At least one of the encapsulating layers is rotationally aligned with the bilayer to create the moiré superlattice potential. The memristor exhibits ultrafast and robust resistance switching between multiple resistance states at high temperatures. The memristor, which may be volatile or nonvolatile, may be suitable for neuromorphic computing.
Carbon-Based Volatile and Non-Volatile Memristors