The present invention provides a microelectronic device for sorbent, immunosorbent or cell sorbent assay and for measuring biological cell dynamics. The device is based on an open-gate pseudo-conductive high-electron mobility transistor, which is based on a multilayer hetero-junction structure being made of lll-V single- or polycrystalline semi-conductor materials and deposited on a substrate layer (10) or placed on a free-standing membrane. Said structure comprising at least one buffer layer (11) and at least one barrier layer (12), said layers being stacked alternately, wherein the thickness of a top (barrier or buffer) layer in an open gate area of said transistor is 5-9 nanometre (nm), which corresponds to the pseudo-conducting current range between normally-on and normally-off operation mode of the transistor, and the surface of said top layer has a roughness of about 0.2 nm or less. In addition, the present invention provides methods for sorbent, immunosorbent or cell sorbent assay and for measuring biological cell dynamics using said device.
MICROELECTRONIC DEVICE FOR ELECTRONIC SORBENT ASSAY AND FOR MONITORING BIOLOGICAL CELL DYNAMICS COMPRISING PSEUDO-CONDUCTIVE HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT)