Photoelectronic properties of semiconductors
Richard H. Bube
Cambridge University Press
The interaction between light and electrons in semiconductors forms the basis 
for many interesting and practically significant properties. This book examines 
the fundamental physics underlying this rich complexity of photo-electronic 
properties of semiconductors, and will familiarize the reader with the relatively 
simple models that are useful in describing these fundamentals. The basic 
physics is also illustrated with typical recent examples of experimental data 
and observations. 
Following introductory material on the basic concepts, the book moves on 
to consider a wide range of phenomena, including photo-conductivity, recombination
effects, photo-electronic methods of defect analysis, photo-effects at 
grain boundaries, amorphous semiconductors, photo-voltaic effects and 
photo-effects in quantum wells and super-lattices. The author is Professor of 
Materials Science and Electrical Engineering at Stanford University, and has 
taught this material for many years. He is an experienced author, his earlier 
books having found wide acceptance and use. This book represents, as much 
as any one book can, his 44 years of research to date. 
Readers will therefore find this volume to be an up-to-date and concise 
summary of the major concepts, models and results. It is intended as a text for 
graduate students, but will be an important resource for anyone researching in 
this interesting field.