title: Indium arsenide antimonide phosphide
text: # Indium arsenide antimonide phosphide
  
  Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material.
  
  InAsSbP has been used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes and lasers, photodetectors and thermophotovoltaic cells.
  
  InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials.
  
  