After John wrote the abstract "基于Synopsys公司3DTCAD器件模拟,该文通过改变3种工艺参数,研究65nm体硅CMOS工艺下PMOS晶体管工艺参数变化对静态随机存储器(StaticRandomAccessMemory,SRAM)存储单元翻转恢复效应的影响.研究结果表明:降低PMOS晶体管的P+深阱掺杂浓度、N阱掺杂浓度或调阈掺杂浓度,有助于减小翻转恢复所需的线性能量传输值(LinearEnergyTransfer,LET);通过降低PMOS晶体管的P+深阱掺杂浓度和N阱掺杂浓度,使翻转恢复时间变长.该文研究结论有助于优化SRAM存储单元抗单粒子效应(Single-EventEffect,SEE)设计,并且可以指导体硅CMOS工艺下抗辐射集成电路的研究.", he wrote these keywords "存储单元, 研究, 翻转恢复时间". Do you think his choice of keywords was correct? Answer yes or no.
no