rotatable state relative to the solution reservoir small portions of liquid solution are supplied by rotating the lower plate relative to the upper plate and the solution reservoir and constrained in shape and volume which are adjusted by the upper plate and the wells the composition and doping level of epitaxial layers are controlled through vapor liquid communication application_number US 66786776 A description this invention will now be described in more detail with reference to the example although an apparatus for manufacturing single crystal epitaxial layers of gap and production of the layers of gap are illustrated in the example it will be obvious to those skilled in the art that this invention can be applied to the preparation of single crystal epitaxial layers of other various semiconductors in this example of embodiment an n layer and a p layer were grown in one process on an n type gap single crystal substrate of a diameter of 30 50 mm grown by the lec method liquid encapsulated czochralski method fig3 is a vertical cross sectional view of the essential part of a mass production liquid phase epitaxial growth apparatus used in the embodiment of the present invention the main part of the apparatus is constructed in a quartz bell jar 11 and is heated by means of a heater 12 as uniformly as possible in horizontal planes and to create a temperature gradient as required in the vertical direction with higher temperatures in higher planes if necessary the bell jar 11 and heater 12 may be installed in a water cooled metallic bell jar and purged by flowing hydrogen gas or inert or neutral gas outside the quartz bell jar the liquid solution 13 is contained in the solution reservoir 14 and is positioned on the rotatable circular lower plate.