the nucleation layer depends on the material used for nucleation it is determined as the thickness sufficient to nucleate the diamond growth and is preferably less than 150 nm other amorphous or polycrystalline materials mentioned previously may be used without departing from the scope of present invention the surface of the nucleating layer is denoted with 522 in another embodiment the nucleation layer 521 is formed during the last step of the formation of the layered structure 502 in this latter embodiment no deposition of a nucleating layer as described in b 2 is necessary as the surface 506 of the layered structure 502 has then been prepared for the subsequent step of growing synthetic diamond in this case the u201c nucleation layer surface u201d 522 means surface 506 fig5 b shows the third step b 3 of method b in b 3 a synthetic diamond layer 531 is grown on the surface 522 the growth direction is indicated with the arrow 533 the growth direction 533 of the diamond layer 531 is the same as the growth direction 505 of the layered structure 502 the thickness of the diamond may vary from several micrometers to hundreds of micrometers depending on the application during growth the surface 532 of the synthetic diamond becomes rough the completed structure is denoted with 530 fig5 c shows the fourth and fifth steps of method b steps b 4 and b 5 in the fourth step b.