later stage of the inventive method wherein a single annealing step is employed in activating the bottom and top electrodes of the capacitor as well as any other diffusion regions that may be present in the structure activating all the implanted regions using a single annealing process is highly preferred in the present invention since it lowers the thermal budget of the overall process the high dose reach thru implant is performed by implanting n or p type dopants at a dosage which is capable of forming a highly doped region having a dopant concentration of about 1e19 atoms cm 3 the conditions used during the implant process are conventional and are well known to those skilled in the art as stated above following the implantation process the implant region may be subjected to an activation annealing process which is typically carried out in an inert gas such as he ar or n 2 or a forming gas the activation annealing may be carried out using conventional rapid thermal annealing rta or conventional furnace annealing and a single temperature or various ramp and soak cycles may be employed it is again emphasized that this activation annealing step may be performed after formation of the top electrode next and as shown in fig1 b high k dielectric 14 is formed over at least a portion of bottom electrode 12 the term u201c high k u201d as used herein denotes a dielectric that has a dielectric constant of greater than about 8 preferably from about 10 to about 50 it is noted that all the dielectric constants reported herein are relative to a vacuum unless otherwise stated a wide variety of high k dielectrics may be employed in the present invention including but not.