polysilicon layer 320 covered by a more conductive layer such as a barrier metal layer or silicide layer 325 or refractory metal silicide or barrier metal if desired according to conventional methods preferably the silicide is a tungsten titanium tantalum molybdenum or cobalt silicide the barrier metal may be those such as titanium nitride tungsten nitride or the like preferably the barrier metal is formed of a tin w wn x w or wn x the doped polysilicon layers 320 may be formed by conventional methods such as chemical vapor deposition cvd conductive layer 325 of titanium tantalum cobalt or tungsten is then deposited using a chemical vapor deposition cvd sputtering or a physical vapor deposition pvd of the silicide or a cvd or pvd deposition of the metal followed by a thermal step to cause the metal to react with the underlying polysilicon to form the metal silicide the wafer is then annealed at approximately 600 u00b0 c to about 800 u00b0 c for approximately 30 seconds in a nitrogen environment to react with a portion of the polysilicon layer 320 to form conductive layer 325 the excess metal is then removed to arrive at the structure shown in fig4 preferably the conductive layer 325 is formed by depositing wsi x over the doped polysilicon layers 320 the wsi x may be deposited onto the doped polysilicon layers 320 by conventional methods such as cvd.