5 994 159 of v a aksyuk et al and also in the u s pat no 6 300 156 of h l decker et al patents that are hereby incorporated by reference herein notably the aksyuk et al and the decker et al patents involve the erection of pseudo three dimensional structures on the surface of a mems device rather than the rotated sacrificial substrate free processing of a mems module in actually each of the hinge elements appearing in the fig5 and the fig7 drawings is comprised of polysilicon in a mumps process device according to this arrangement each of the clevis and wings 702 704 706 are portions fashioned by etching from a single upper layer of polysilicon i e a poly 2 layer while the pin element 700 is part of a lowermost and first deposited lower poly 1 layer of polysilicon these two layers of polysilicon are originally separated by an etch responsive layer of oxide material that initially fills the interior of the clevis 702 between polysilicon layers until it is removed in a controlled etching sequence to free the pin 700 into the illustrated rotatable condition during fabrication of the polysilicon layers once the polysilicon 1 hinge pin 700 is formed the oxide layer and the overlying polysilicon 2 layer conform to its shape and thus form the.