by plasma deposition between the lower oxide layer 8 and the sog layer 9 of the intermetal oxide sandwich this amorphous silicon layer may be relatively thin on the order of 500 1000 angstroms due to the high concentration of dangling silicon bonds in amorphous silicon the dangling silicon bonds bordering the dielectric neutralize charge introduced in the sog layer which would typically cause inversion of the channel substrate other preferred embodiments can be used to neutralize charge built up in the sog layer for example rather than providing a single layer of amorphous silicon under the sog layer one layer may be provided on top of the sog layer i e amorphous silicon layer 14a and another beneath the sog layer layer 14 these two layers of amorphous silicon may be thinner than the single layer provided in the above mentioned embodiment for example each of the two amorphous silicon layers can be approximately 500 angstroms preferred embodiments of the present invention are not limited to the neutralization of charges created by interaction between the nitride passivation layer and the sog layer nor to charges impressed upon the sog layer it has been determined that charges can be impressed upon any of the dielectric layers in an integrated circuit package by a plurality of different mechanisms for example glass defects can produce charges in the sog layer even if the sog is inorganic similarly the high voltage plasma deposition of certain dielectric layers may induce charges therein the aforementioned preferred embodiments will however neutralize the charges another preferred embodiment of a multilayer integrated circuit according to the invention.