u00b0 c the ald films showed excellent uniformity hafnium oxide films were then deposited at a chamber pressure of 4 torr and a substrate temperature of 175 u00b0 c by pulsing tdeah and a nitrogen carrier from 2 seconds to 14 seconds after the tdeah pulse a nitrogen gas purge was pulsed into the chamber for each cycle the nitrogen purge after the tdeah carrier pulse was the same length as the tdeah carrier pulse next the nitrogen purge was terminated and a plasma of an argon carrier and oxygen ar o ratio 1 2 was pulsed to the chamber for 2 seconds to 14 seconds matching the length of the tdeah carrier pulse the cycle was then completed by a second nitrogen purge matching the length of the tdeah carrier pulse the cycle was repeated 40 times and the resulting hafnium oxide films were measured for thickness in addition to wiw thickness non uniformity the results are shown in fig5 and show that pulse times from 10 to 14 seconds provide significant improvement in uniformity fig6 shows an auger analysis of atomic concentrations of a hafnium oxide film deposited at a substrate temperature of 175 u00b0 c although not calibrated the analysis shows that the film contained about 60 atomic percent of oxygen and about 40 atomic percent of hafnium and did not contain detectable amounts of carbon the atomic concentration of a hafnium oxide film prepared from the same precursor using a mocvd process is shown in fig7 the results in fig7 show that the comparison film retained a measurable amount of carbon the hafnium oxide films of the invention have utility in conventional devices such as replacing the hafnium oxide films forming hafnium oxide films and.