detector tiles 12 12 u2032 like those typically obtained from 200 mm silicon wafers then with four tiles an active detector surface area of a total of 230 mm by 210 mm may be achieved from which a circular detector surface area 16 with a diameter of a maximum 210 mm may be removed from each 200 mm silicon wafer one may obtain a first detector tile 10 and two second detector tiles 12 consequently for the realization of a circular detector surface area 16 of a maximum 210 mm diameter three 200 mm silicon wafers are needed as starting material in addition a significant amount of assembly effort is required for the assembly and fixing of the detector tiles 10 10 u2032 12 12 u2032 furthermore the circular detector surface area 16 contains joints 17 that must be corrected by means of image processing after an image capture and for which measures must be taken to reduce the risk of breakage for example in the case of impact loading or due to fluctuating thermal loading in one embodiment the objective of the invention is to create in comparison with conventional solid body x ray image detectors an advantageous robust solid body x ray image detector that can be produced economically with a circular detector this objective may be achieved with a solid body x ray image detector having a photodiode array as a two dimensional ccd or cmos sensor on a single uncut silicon wafer as a starting material on which a scintillator is deposited for conversion of the incident x ray radiation into visible light the invention according to one embodiment will be explained with reference to fig2 and.