between the emitter and the base is a little bit positive for example 0 7 volt the transistor of carbon nanotube of the present invention can provide a good performance only when the voltage v eb between the emitter and the base is a little bit negative because as an energy gap in the base is actually approximately u201c 0 u201d the little bit negative voltage v eb should be applied to the emitter and the base for setting up an energy level positively when holes enter into the base in this instance a slight reduction of an absolute value of the voltage v eb between the emitter and the base which has a negative value has an effect identical to a slight increase of a voltage v eb of an orderly direction between an emitter and a base in the background art transistor when the absolute value of the voltage v eb between the emitter and the base which has a negative value is reduced slightly a number of holes in the base is reduced slightly this is identical to a slight provision of electrons to the base through a terminal connected to the base with a consequential attraction of holes in the emitter toward the base which produces a current gain alike the background art transistor a strong reverse bias is applied between the base and the collector if this is taken for a case when the emitter and the base are.