resist exposed at 40 mj cm 2 was silylated with dmsdma at 80 u00b0 c for five minutes at a pressure of 10 torr etching was performed as in example 1 a regular array of 0 4 micron wide lines was formed with clear resolution a resist material sal 601 of shipley which is compounded for electron beam lithography was coated on a substrate to a depth of approximately one micron the material was a novolac based resist which contained an organohalide compound as an acid generating species and also contained an acid catalyzed crosslinking agent after curing the resist was exposed at a fluence of 2 5 mj cm 2 pulse to a total dose of 10 mj cm 2 of 193 nm radiation silylation of the exposed wafer was carried out in trimethylsilyldimethylamine tmsdma for one minute at 140 u00b0 c and a pressure 30 torr removal of unsilylated material was achieved in an rie under approximately the same conditions as in the above two examples excellent contrast and submicron feature definition were obtained using the same exposure regimen the resist was silylated with dmsdma for one minute at 100 u00b0 c and a pressure of 10 torr in this case etching was performed with a two step process prior to an oxygen rie plasma the sample was etched for two minutes in a mixture of 80 oxygen 20 cf 4 with a bias of 100v the reactive fluorocarbon pre etch resulted in a clearer final product.