reaction vessel was maintained under pure dry nitrogen at a temperature of 300 u00b0 c 0 2 mmol of se and 3 mmol of s dissolved in 2 ml of trioctylphosphine was swiftly injected into the vessel after 10 min 0 5 ml of 1 octanethiol was introduced into the reactor to passivate the quantum dots and the temperature of the reactor was lowered to room temperature after purification the resulting cdse zns quantum dots were dispersed in toluene typical fabrication process for qd led with a device structure of ito pedot pss poly bis 4 butylphenyl bis phenyl benzidine poly tpd quantum dot emitting layer doped or undoped zno nanoparticle layer al may be fabricated in the following manner a glass substrate with an ito transparent electrode was cleaned sequentially with de ionized water acetone and isopropanol followed by an uv ozone treatment the pedot pss baytron ai 4083 was spin coated on top of the ito layer followed by baking at 150 u00b0 c in air the poly tpd was spin coated at 2000 rpm onto the pedot pss layer from a chlorobenzene solution and annealed at 110 u00b0 c in nitrogen for 30 min the quantum dot emitting layer was deposited onto the poly tpd layer with spin coating at various rates between 500 and 6000 rpm from a toluene solution with concentrations between 5 and 20 mg ml the doped or undoped zno nanoparticles were dispersed in ethanol and spin coated at 4000 rpm onto the quantum dot layer to provide a 40 nm thick layer the assembled device was then annealed at 60 u00b0 c.