such as aluminum nitride aluminum oxide etc in an embodiment insulation barrier 504 comprises an air gap which is small enough to prevent plasma forming within the gap but large enough to prevent arcing between conductive path 1006 and plasma chamber 514 in an embodiment an o ring 510 is positioned between collection disk structure 502 and the plasma chamber wall structure 514 in an embodiment o ring 510 is comprised of a perfluoronated elastomer i e perlast u00ae parofluor u00ae kalrez u00ae etc in an embodiment o ring 510 is comprised of teflon in an embodiment o ring 510 provides pressure between the back of the probe 507 and the plasma chamber not shown such pressure substantially improves the ability of the probe to dissipate heat during operation in an embodiment the temperature of the probe is substantially the same as the temperature of the plasma chamber in an embodiment a layer of thermally conductive adhesive is placed between conductive path 506 and insulation barrier 504 in an embodiment closed loop control of temperature may be accomplished by embedding a thermocouple not shown in disk structure 502 and a resistive wire not shown around conductive path 506 in an embodiment conductive path 506 includes a wire 509 connected to the power sensing electronics in an embodiment the wire is connected to conductive path 506 with a screw in an embodiment the wire.