a surface acoustic wave device comprising a surface acoustic wave substrate member composed by forming an aluminum oxide film and a thin zinc oxide film successively on a glass substrate the thickness h 1 of the aluminum oxide film and the thickness h 2 of the zinc oxide film are set within ranges of 0 1 u2266 h 1 u03bb u2266 10 and 0 05 u2266 h 2 u03bb u2266 0 35 respectively thereby to utilize sezawa wave or a similar mode wave transmitted on the surface acoustic wave substrate member in multi layer structure application_number US 1409587 A description an embodiment of the present invention is now described with reference to the attached drawings in fig1 a dielectric substrate 1 is formed by borosilicate glass material which is low in cost and ready for forming a mirror face on the glass dielectric substrate 1 there is formed a thin film 2 of aluminum oxide al 2 o 3 by e g rf sputtering according to the present embodiment the film thickness h 1 of the al 2 o 3 thin film 2 is about 30 u03bcm on the al 2 o 3 thin film 2 there is formed an interdigital transducer idt 3 consisting of comb shaped electrodes having wavelength u03bb of 100 u03bcm on which a piezoelectric thin film 4 of zinc oxide zno is formed by sputtering such an interdigital transducer may be formed on the dielectric substrate 1 or on the piezoelectric thin film 4 instead of on the al 2 o 3 thin film 2 fig4 is a top view of the embodiment of the invention shown in cross.