the vanadium 54 and 56 as pictured in fig2 a no notable changes in the transition temperature t c of vanadium films 62 64 containing a thin intermediate layer of lead 59 have been found in all cases before depositing the bank material on the bridge 62 it is necessary to sputter clean the bridge surface to prevent contamination of the bridge bank interface by the lithographic chemicals even in the case of gold bridges failure to sputter clean results in a series resistance of about 10 to 50 ohms at the interface this may be due to an unwanted chemical reaction between the residual lithographic chemicals and the lower surface of the vanadium film 64 referring now to fig2 b once the bank on one side the left side is formed the other right bank is patterned with a lift off process similar to the patterning of the first bank in this case fig2 b however the superconductor is deposited at an angle u03b8 3 to the first left bank edge to form the submicron gap 72 between the banks the completed microbridge 90 viewed from above at reduced scale appears in fig2 c where the submicron line or bridge 92 lies underneath the left and right superconducting banks except in the shadow region 76 the process described hereinabove is suited for contructing variable thickness microbridges using either superconducting or normal metals for the bridge 92 the single josephson devices 90 shown in fig2 c and a number of double josephson devices not shown have been constructed using the above described technique with the vanadium 62 64 91 and gold 28 for the bridge 40 fig1 c as is shown in fig1 b and 1c a 150 a layer of.