patterns of the lfto coating the metal slurry used in examples 6 10 was a mixture of inorganic oxide and metal particles the ratio of each component of the ink was 65 wt of nano silver particles average size of 20 nm 15 wt of silicon oxide and 20 wt of epoxy resin the epoxy resin was bisphenol a epoxy resin manufactured by aldrich and the solvent was a 70 30 mixed solvent of xylene isobutanol the doping amount of lithium and fluorine in the lfto were 0 5 at and 2 at respectively an acetic acid solution weak acid concentration of about 0 01 wt with a ph value of about 5 was used as the lift off solution the patterning process for oxide film of examples 11 13 is described below the process parameters of each example are shown in table 3 with a pattern linewidth of 100 um firstly a glass substrate was rinsed secondly the ink was printed on the substrate through a screen printing process using a screen mesh to form a patterned barrier layer the thickness of the patterned barrier layer was d1 next an indium tin oxide ito was deposited on the patterned barrier layer in the environment of 220 u00b0 c to form a coating the thickness of the ito coating was d2 finally the ink material was removed by a lift off solution to obtain the patterns of the ito coating the ink used in examples 11 13 was a mixture of inorganic tin oxide and silicon oxide the ratio of each.