part of nozzle outlet part at the straight pipe part layer by dry etching of the straight pipe part layer a step to form photoresist layer under the straight pipe part layer a step to leave photoresist only at crater part by patterning the photoresist layer a step to form crater layer by electroplating a metal under the straight pipe part layer and a step to form crater by removing photoresist application_number US 59614500 A description present invention nozzle plate manufacture method can be classified into two of which the first method is explained now silicon wafer is used for nozzle plate material silicon has property not to go bending deformation as it has high rigidity in relation to given thickness so that large area process of wafer unit can be executed silicon wafer thickness may be chosen at will from 5 to 500 u03bcm if silicon wafer is thin interval between nozzles can be reduced so as to be able to be highly integrated while if silicon wafer is thick nozzle plate rigidity is enhanced so that silicon wafer can be used choosing its thickness suitably according to wanted characteristics straight pipe part layer is formed under the silicon wafer it is preferable to form the layer 1 to 30.