on the donor substrate 106 the first thin film pattern 105 a is transferred from the donor substrate 106 to the target substrate 109 then the xy u03b8 stage 107 is moved by a prescribed pitch and positioning fab illumination and transfer steps are repeatedly executed for the second thin film pattern 105 b and then for the third thin film pattern 105 c in the same manner as done for the first thin film substrate 105 a as shown in fig2 3 a and 4 whereby a micro structure is completed fabs are applied to the surface of the thin film pattern 105 a or 105 b that has been transferred to the target substrate 109 and the surface of the thin film pattern 105 b or 105 c on the donor substrate 106 that will be transferred next then the target substrate 109 is removed from the z stage 108 and the necessary micro structure is separated from the target substrate 109 according to the first embodiment since etch back is performed in the regions where the release layer 102 is exposed even if a portion of the release layer 102 is raised in the transfer step the raised portion 102 a is prevented from contacting the target substrate 109 or the thin film pattern 105 a or 105 b that has been transferred to the target substrate 109 therefore the thin film patterns 105 a 105 b and 105 c.