be within the range of a few microns or less while if the invention is used in mms these dimensions can be comprised between a few tens and a a couple of thousands of microns the manufacturing layer 26 has a variable thickness which is thinner in the areas over purification material deposits 24 24 u2032 and thicker in the areas cleared from these deposits the manufacturing layer 26 adheres to the base layer surface 23 in these areas which are clear from the purification material deposits the thickness of the manufacturing layer 26 in the areas over the purification material deposits 24 24 u2032 has the same values of manufacturing layer 15 of the support 10 in the first detailed embodiment while in areas not located over the purification material deposits 24 24 u2032 its thickness will be increased by the thickness of these deposits to help promote adherence the manufacturing layer 26 can be made with the same material of base layer 21 in a preferred embodiment the preferred combination is silicon which may include mono or polycrystalline depending on the manufacturing needs for the microdevice for base layer 21 and silicon grown through epitaxy for manufacturing layer 26 however those skilled in the art would appreciate that other combinations of appropriate materials can be used for these layers which would adhere to each properly such as the family of gaas semiconductors 0034 fig3 and 4 show an embodiment of the invention for use of the support 10 in ic production on the upper surface.