thus a shielding under the gate electrode will not be formed to retard the charge transfer from the photo receiving region fig5 to 8 show an embodiment of the method of manufacturing an image sensor device according to the present invention referring to fig5 first a substrate 20 having sti 21 prepared thereon and a photo receiving region not shown is provided a silicon oxide layer may be formed on the substrate surface by a thermal oxidation and a silicon nitride layer is formed on the silicon oxide layer using silane and ammonia gas as working gases by a plasma enhanced chemical vapor deposition to form a dielectric material layer the process can be repeated for several times to form a multi layered dielectric material layer if desired thereafter a photoresist 23 has a corresponding pattern is formed using a microlithography process to shield the region of the predetermined dielectric protecting layer area corresponding to the photo receiving region and an etching process is performed to remove the unshielded portion of the dielectric material layer the etching for the silicon nitride may be a dry etching such as a plasma etching the etching for the silicon oxide may be a dry etching or a wet etching accordingly a dielectric protecting layer 24 comprising a silicon oxide layer 38 and a silicon nitride layer 40 covering the photo receiving region is defined thereafter the photoresist layer is removed referring to fig6 a gate oxide layer process such as a thermal oxidation process is performed to form an oxide layer on the substrate 20 as the gate insulating film 26 adjacent to the dielectric protecting layer 24 a well not shown as desired may be further formed on the substrate 20 before the.