the laser scribed grooves 7b without the process of forming the grooves in the encapsulation resin portion in this case although the section of the separated wafer may slant as shown in fig1 if the space between ics adjacent to each other is 0 5 mm or more no problem arises with respect to the reliability further the grooves formed in the encapsulation resin with the blade or the like mentioned in the above may be as deep as a resin layer just above the glaze layer and still the wafer can be separated to the contrary if the grooves are formed so as to reach the substrate below the glaze layer the wafer can be separated utilizing the grooves reaching the substrate even if the laser scribed grooves are not formed on the back of these portions with the processing method of the present invention described in the above the distance between the edge of an ic and the edge of the substrate on the side of the ic is on the order of 0 3 mm since the distance between a heater and the edge of the substrate on the side of the heater the distance between the heater and the edge of the ic and the width of the ic are about 0 5 mm 3 7 mm and 0 6 mm respectively a microminiaturized thermal head on the order of 5 1 mm can be materialized as described according to thermal heads a number of which is gotten.