not limited to those numbers as above in the present invention fig3 is a block diagram illustrating the plating process of the apparatus for simultaneous plating according to the present invention after cleaning the object for plating to wash off impurities the objects for plating are placed in the first chamber and the second chamber the unnecessary gas remaining in the two chambers is exhausted resulting in removal of impurities and the pressures of the chambers arc maintained at about 5 u00d7 10 6 torr oxides or other harmful materials on the above object arc then removed by heating the object to a temperature of about 500 u00b0 c during this step the exhaust is also carried out for the removal of the heated oxide particles anti other materials next plasma cleaning is performed by filling the chambers with an inert gas such as ar gas plating is then performed by operation of the arc source hcd source or magnetron source the thickness of plating may be desirably between about 3 u02dc 5 u03bcm it is desirable to form a base layer on the object for plating so as to ensure strong adhesion of the plating material to the object for example in the case of titanium nitride plating a.