a region of the intermediate device at the insulating refill 1316 and fig1 b illustrates a cross sectional view of the intermediate device at the si recesses 1326 at block 1230 a suitable semiconductor material 1330 is grown within the recesses 1326 in exemplary embodiments the semiconductor material is sige the semiconductor material 1330 can be grown with any suitable technique including but not limited to mbe as described herein sige channel pfets show superior hole mobility especially in narrow width devices due to the uniaxial stress enhanced mobility fig1 illustrates an intermediate structure illustrating the sige growth within the recesses 1326 fig1 a illustrates a cross sectional view of a region of the intermediate device at the insulating refill 1316 and fig1 b illustrates a cross sectional view of the intermediate device at the semiconductor material 1330 and further illustrating the semiconducting material 1305 at block 1235 a gate stack 1301 and spacer structure is defined it can be appreciated that the gate stack 1301 can be any suitable gate stack for example the exemplary transistors described can be high u03ba metal gate hkmg transistors in which high u03ba dielectrics are used in conjunction with metals to form the gate stack 1301 the term u201c high u03ba dielectric u201d refers to a material with a high dielectric constant u03ba for example as compared to sio 2 used in semiconductor manufacturing processes which replaces the sio 2 only gate dielectric the gate stack 1301 can therefore include an hk dielectric layer 1335 deposited over the insulating refill 1316 and the semiconductor material 1330 the hk dielectric layer 1335 can be any suitable hk dielectric material such as but not limited to.