A1 abstract a silicon single crystal which has been produced using the czochralski method has a lt 113 gt orientation application_number US 35173903 A description turning now in detail to the drawings fig1 compares lengths and diameters of the dash seed it can be seen that the length of the dash seed when lt 100 gt orientation single crystals are being pulled is longer at 150 mm as is the diameter at the narrowest point at approximately 5 5 mm 0018 fig2 compares the diameter of the body phase cone as a function of the position of the ingot it can be seen that when lt 100 gt orientation single crystals are being pulled the body phase is shorter at approximately 90 mm 0019 fig3 shows a comparison of the pulling rates after the pulling of the body phase as a function of the ingot position using the same furnace structure it is clear that the final pulling rates are faster when lt 100 gt orientation single crystals are being pulled at approximately 0 98 mm min the single crystals which have been produced in accordance with the invention are processed further to form semiconductor wafers they are supplied to manufacturers of electronic components as semiconductor wafers with one or two polished side faces semiconductor wafers with an epitaxial coating or.