an electrostatic chuck 24 the clamping force is provided by a 0 1200 v 13 56 mhz signal supplied by a high frequency generator 26 the high frequency hf signal automatically compensates for the dc self bias on the wafer by shifting the voltage applied to each pole of the electrostatic chuck 24 heat transfer through the wafer is controlled by using a pressure controller 28 to control the pressure of a gas sealed in electrostatic chuck 24 as shown electrostatic chuck 24 is movable vertically from a higher operational position to a lower loading position dashed lines reactive gases are injected into chamber 12 by a series of jets arrayed radially around the chuck 24 twin turbo exhaust pumps 32 have a capacity of approximately 1100 lps each and permit low pressure lt 5 mtorr operation at high gas loads approximately 500 sccm the speed u00ae reactor contains settings which permit the operator to create a capacitively coupled or an inductively coupled plasma during normal operation an inductively coupled plasma is used a capacitively coupled hydrogen plasma ccp is obtained by flowing in a small volume of h 2 at low pressure 0 10 mtorr and creating a ccp plasma as noted above a ccp plasma is sufficient to passivate the chamber 12 when films containing a low percentage of dopant are being deposited ccp has been found inadequate however to prevent flaking when films containing a high percentage of dopant are being formed a series of tests were performed to determine the efficacy of hydrogen ccp and or icp passivation cycles the tests are described and the results are indicated below following an idle period three batches of 4 wafers each were processed on a novellus concept two speed reactor on each wafer.