or neutral node at a frequency peculiar to the origin of the source the body 130 a of the first nmos transistor m 1 is connected to ground its drain 140 a and source 120 a are connected together its gate 130 a is connected to the input signal node vs the transistor m 1 by virtue of the intrinsic diode capacitance junction captures charge on the accumulation surface layer at the semiconductor oxide interface the charge accumulates as result of applied potential and the intrinsic mos gate to body capacitance the potential across the mos capacitance will be switched in polarity by the alternating potential of the signal from the source vs and force the charge to flow from the accumulation layer and onto the drain and source nodes 140 a 120 a this mos capacitance is therefore called the u201c pumping u201d transfer capacitance which may be more correctly defined as a u201c pumping transcapacitance u201d since it is a mos transistor used in a capacitive charge transfer mode rather than a trans resistance transistor mode the body terminal 130 b of the second nmos transistor m 2 is connected to the joined drain and source nodes 140 a 120 a of the first nmos transistor m 1 the drain and source terminals 140 b 120 b of transistor m 2.