in one direction to form a spacer pattern forming a photoresist pattern having a pad type overlapping a side of the spacer pattern and etching an underlying layer with the photoresist pattern and the spacer pattern as a mask to form an isolated pattern the method improves resolution and process margins to obtain a highly integrated transistor application_number US 11707908 A description fig3 a to 3 h are diagrams illustrating a method for manufacturing a semiconductor device according to an embodiment of the invention fig3 a i to 3 h i are plane diagrams and fig3 a ii to 3 h ii are cross sectional diagrams taken along line x x u2032 of fig3 a i to 3 h i respectively referring to fig3 a an underlying layer 305 a first hard mask layer 310 a second hard mask layer 315 and anti reflection film 320 and a first photoresist pattern 325 defining a pattern region are formed over a semiconductor substrate 300 the first photoresist pattern 325 includes a pad pattern 325 a having a critical dimension u2018 a u2019 and a line pattern 325 b having a critical dimension u2018 b u2019 wherein the critical dimension u2018 a u2019 is greater than the critical dimension u2018 b u2019.