the symmetric spiral inductor are able to improve their symmetry by containing the same number of connecting structures however this approach is not applicable to even turns since a symmetric spiral inductor with even turns has an odd number of bridging metal segments in summary in comparison with a conventional symmetric spiral inductor the prevent invention presents an even better improvement in symmetry for an integrated inductor structure with even turns however whether the number of turns is even or odd the integrated inductor structure of this invention makes its two inductors include the same number of connecting structures which is important for the symmetry performance the metal layers used in this invention are not limited to the utm layer and the rdl which are adjacent on the contrary this invention can be implemented in a more complex semiconductor structure fig1 illustrates a structure in which an integrated inductor is made on different metal layers according to an embodiment of this invention fig1 shows a structure of a flip chip including two dies 1310 and 1320 face to face the die 1310 includes a substrate 1312 an oxide layer 1314 and a redistribution layer 1316 the oxide layer 1314 includes the ultra thick metal 1315.