mask 12 and substrate 10 by evaporation techniques in a high vacuum or sputtering immediately following dispostion of the chromium silicon oxide film to the desired resistivity a second layer consisting of approximately 80 nickel and 20 chromium or other suitable mixture is deposited over the chromium silicon oxide film to a thickness of approximately 200 angstroms and a resistivity of approximately 100 ohms per square without breaking vacuum since the nickel chrome layer is deposited during the same vacuum pump down the chromium silicon oxide film is not allowed to form an oxidation layer 18 as shown in fig1 c which prevents a low resistive contact between the chromium silicon oxide and the metal contact after the disposition chamber is cooled to a temperature of less than 100 u00b0 centigrade the substrates are removed from the vacuum system and the masks are chemically etched away removing all of the undesired chromium silicon oxide and nickel chrome layer a resistor pattern is left on the insulating substrate consisting of a layer of chromium silicon oxide overcoated with a nickel chrome layer as shown in fig2 d the laminar structure is then cleaned and the substrates are patterned with photoresist and undesired nickel chrome is selectively etched off the resistor pattern in all areas except where the electrical contacts are going to be attached as shown in fig2 e a passivation layer and electrical contacts.