region is proportionally narrowed and the contact area reduced in conventional devices the contact hole has a deep depth and a narrow cross sectional area contributing to the problems discussed above however according to the method of the present invention the epitaxial layer is grown from the interior of the contact hole as a result contact failure is eliminated and the height of the step of the contact portion is considerably reduced thereby improving the reliability and the manufacturing yield of the dynamic ram further given the improvements of the present invention the contact size is reduced several different embodiments of the manufacturing method for several modified capacitor structures of the dynamic ram will now be described with reference to fig3 to 6 fig3 a to 3i are sectional views showing a method for manufacturing a stacked capacitor type dynamic ram semiconductor device according to the present invention as shown in fig3 a a p type well 12 is formed on a semiconductor substrate 10 a field oxide layer 16 is formed according to the locos local oxidation of silicon method to define an active region 14 although not shown a p channel stopper layer may also be formed under the field oxide layer 16 in fig3 b a gate oxide layer 18 is provided followed by a depositing of a first conductive layer 20 of polycrystalline silicon the first conductive layer 20 is deposited in a pattern to define a gate electrode of the access transistor or a word line in this.