an embodiment of the present invention an active region and field region are defined in a semiconductor substrate 11 by forming a field oxide film 12 through the device separation mask process a gate electrode 20 is formed on the semiconductor substrate 11 in the active region and a gate oxide film 19 is formed between the semiconductor substrate 11 and the gate electrode 20 source drain local electrodes 16a which are electrically insulated by a spacer insulation film 17a are formed on both sides of the gate electrode 20 a source drain 30 which electrically contacts the local electrodes 16a is formed in the semiconductor substrate 11 below the local electrodes 16a a source drain connection layer 14a is formed between the local electrode 16a and metal electrode 22 so that the source drain 30 is electrically connected to the metal electrode 22 an insulating film 13 is formed between a layer 14a and the semiconductor substrate 11 an underlayer insulation film 21 is formed for the electric insulation between devices and protection of device the transistor manufacturing process of the present invention is described below with reference to fig3 a to 3g referring to fig3 a the active region and field region are defined by forming the field oxide film 12 in the semiconductor substrate 11 through the device separation mask process.