are used to apply the dispersion containing the carbon nanomaterials to the substrate finally metallization steps are taken to complete the transistor fabrication electrodes are deposited onto the cntfet in the trenches and the rigs in contact with the carbon nanomaterials to read the signal and create a map based on the signal produced by the array of transistors 104 and 105 in the present invention at least two electrodes are utilized in an embodiment of the present invention a voltage is applied through the electrodes to each individual bit in the array for a trench or rig which a carbon nanomaterial has been deposited current will flow producing a signal of u201c 1 u201d if there is no current flow then no carbon nanomaterial was deposited producing a u201c 0 u201d once voltage is applied through each individual bit the two dimensional map of u201c 1 u201d s and u201c 0 u201d represents the signal produced by the array fig2 illustrates types of transistors bits obtained in the present invention the substrate will have an array of devices bits that can contain a carbon nanomaterial bit 1 201 or not bit 0 202 the electric and optical properties of these bits will be completely different depending upon if they are bit 1 201 or bit 0 202 for example current will flow through bit 1 201 but not bit 0 202 fig3 illustrates examples of argb for an embodiment of.