resistance element 50 is formed further thereon and a contact plug 28 of for example copper is embedded on the magnetic memory element 50 via a barrier metal film 27 of for example tan ta a bit line bl 40 of for example copper is formed on the interlayer insulating layer 20 while being connected with the contact plug 28 fig2 is magnified drawings of the magnetic memory element 50 of fig1 and fig2 a shows a top drawing and fig2 b shows a cross sectional view the magnetic memory device 100 has a structure that a plurality of magnetic memory elements 50 are arranged in a matrix like state although not illustrated in fig1 a top electrode te of for example ta is formed between the magnetic memory elements 50 and the barrier metal film 25 the magnetic memory element 50 includes a lead out electrode 30 and a fixing layer pl connected to the lead out electrode 30 on the fixing layer pl tunnel insulating layers tn 1 and tn 2 of nonmagnetic materials dielectrics and a memory layer fl of ferromagnetic layer sandwiched between the tunnel insulating layers tn 1 and tn 2 are formed the above mentioned top electrode te is formed on the tunnel insulating layer tn 2 for the fixing layer pl a structure formed by switched connection of an antiferromagnet such as ptmn irmn femn ptcrmn nimn nio fe 2 o 3 and the like with one or a plurality of ferromagnets such as co fe ni al b si zr nb cr ta and the like or a structure formed by layering a saf structure synthetic antiferromagnet structure which is formed by connecting a ferromagnet and a ferromagnet through a.