a wet etch may be implemented because the result of the etch does not provide critical dimensions in that a later etch is performed to provide various device boundaries as further appreciated below 0017 fig3 illustrates a cross sectional view of structure 10 from fig2 after two additional processing steps and each of these steps is discussed below as a first step reflected in fig3 photoresist portion 60 see fig2 is removed and this removal step may be accomplished in various manners for example either an oxygen or hydrogen ash may be used although an oxygen approach is less favored because it may pose a risk of oxidation of the metal e g cobalt in the exposed area of metal layer 40 as still another example a solvent may be chosen in which case the particular solvent should be selected so as not to damage either the silicon in portion 50 1 underlying photoresist portion 60 or the metal in the exposed area of metal layer 40 in any event once photoresist portion 60 is removed silicon portion 50 1 is exposed as a second step reflected in fig3 an anneal step is performed preferably after photoresist portion 60 is removed the anneal step may be achieved using various temperatures and.