of the distance of the modulator from the surface of the silicon an example is the fourth embodiment of the present invention illustrated in fig7 and described infra in these embodiments the closer the modulator is to the surface of the silicon the lower is the voltage that modulation breakdown occurs at fig3 a through 3d are partial cross sectional views illustrating a first portion of a first method of the fabrication of the trigger device of the present invention in fig3 a a p type substrate 200 is provided having a doping level of about intrinsic to 10 16 atoms cm 3 in fig3 b an n type implant of a dose of about 10 12 to 10 17 atoms cm 2 at an energy of about 50 kev to 3 mev is performed to form modulator 205 a distance u201c d 1 u201d below surface 210 of substrate 200 in bicmos this implant may be the subcollector implant of the bipolar device in one example u201c d 1 u201d is about 0 2 to 3 microns in fig3 c deep trench isolation 215 and shallow trench isolation 220 are formed in substrate 200 deep trench isolation 215 contacts sides 225 of modulator 205 deep trench isolation 215 and modulator 205 define a body region 230 in substrate 200 in fig3 d an n type reach through 235 is formed from top surface 210 of substrate 200 to modulator 205 depending upon the technology of the primary devices of an integrated circuit modulator 205 can be formed concurrently with formation of a triple well cmos n band a bipolar subcollector a buried n layer or a sige pedestal structure fig3 e is a plan view of fig3 d in fig3 e it is.