about 5 u03bcm forming an integral part of the pedestal of the to be created interconnect bump and layer 58 is a layer of solder compound deposited to a thickness between about 10 and 100 u03bcm and more preferably to a thickness of about 50 u03bcm with the completion of the electroplating of these three layers the solder bump is essentially complete the second solder mask 52 fig8 is therefore removed from the surface of the barrier seed layer 46 and the surface of the interconnect metal 50 see fig9 exposing the barrier seed layer 46 and the interconnect metal 50 a pattern of barrier seed material overlying the barrier seed layer 46 it is good practice and can be of benefit in the creation of the layers 54 56 and 58 of metal to perform prior to the electroplating of these layers of metal an in situ sputter clean of the exposed surface exposed through opening 51 of the layer 50 of re routing metal the barrier seed layer 46 can now be etched using the patterned layer 50 of interconnect metal as a mask which leads to the cross section that is shown in fig1 it is further good practice to oxidize the surface of the ubm and pillar metal by chemical or thermal oxidation the chemical oxidation.