the plzt material may have a lanthanum content ranging from 5 to 10 a lead zirconate content of 62 to 70 mole and a lead titanate content of 38 to 30 the ions are implanted at a depth of 0 1 to 2 microns below the surface of the plzt plate application_number US 34361282 A description first with reference to fig1 a more complete description of the image storage and display device described in the literature reference mentioned above can be provided the rhombohedral phase plzt ceramic plate 1 is positioned between two transparent indium tin oxide ito low resistance electrodes 2 of an electric field generator by sputter deposition the electrodes are affixed to these two major surfaces of the plzt ceramic plate the overall thickness of the plzt ceramic plate is between 200 and 300 microns a voltage from a voltage source 3 is applied through dpdt switch 4 across the plzt ceramic plate by means of the ito electrodes switch 4 provides reversal of polarity across ito electrodes and thus provides for reversal of ferroelectric polarization of the plzt ceramic by simultaneously exposing the image on a surface 5 of the plate using near uv light and switching the ferroelectric polarization through a portion of the hysteresis loop the image is stored in the plzt ceramic plate in fig2 in accordance with the present invention a positive ion implanted plzt ceramic plate 1a is shown in this figure reference indicia for like elements are the same but with a suffix 34 a 34 for additional identification a positive ion implantation region 6 from a depth of 0 1 to 2 microns from surface 5a is illustrated the positive ion implantation should.