data lines d and the first to third power voltage supply line psl 1 psl 2 psl 3 may be made of a second metal pattern and the first link electrode ce 1 may be formed on a third metal pattern the second and third link electrodes ce 2 ce 3 may be made of the first metal pattern or the third metal pattern in some embodiments the first metal pattern may be a gate metal pattern the second metal pattern may be a source drain metal pattern and the third metal pattern may be a transparent electrode such as ito and izo or a reflective electrode fig3 is a cross sectional diagram of i i u2032 in fig2 a connection structure of the second power voltage supply line psl 2 and the second auxiliary electrode ae 2 using the first link electrode ce 1 is described with reference to fig3 with reference to fig3 the data links dl may be made of the first metal pattern on a lower substrate sub a gate insulator gi may be formed on the first metal pattern such as the data links dl the second power supply voltage line psl 2 the first auxiliary electrode ae 1 and the second auxiliary electrode ae 2 may be made of the second metal pattern on the gate insulator gi a passivation layer pas may be formed on the second metal pattern such as the second power supply voltage.