layer 10 has the materials titanium and copper for example firstly a titanium layer being deposited on the second substrate surface 7 and a copper layer being deposited onto the titanium layer the titanium layer serving as a diffusion barrier that prevents copper ions from diffusing into the substrate wafer 1 and making the latter conductive which would give rise to an undesirable transverse conductivity the thickness of the titanium layer is preferably 50 nm and the thickness of the copper layer of the seed layer is 175 nm afterward as illustrated in fig1 f the seed layer 10 is covered with the aid of a further masking layer 11 which is then patterned so that the conductor track locations 12 that is to say the locations at which the conductor track is subsequently intended to be applied are uncovered again in such a way that the seed layer 10 is uncovered there the further masking layer 11 remains at the rest of the locations afterward as is shown in fig1 g the conductor tracks are deposited on the uncovered seed layer 10 with the aid of an electrodeposition method the conductor tracks 13 are preferably deposited in a three layer construction copper nickel and gold successively being applied to the seed layer 10 by electrodeposition as is shown in fig1 h after the application of the conductor tracks 13 the further masking layer 11 and the seed layer 10 situated underneath are removed again to leave the conductor tracks 13 which are insulated from one another by clearances in this way the second surface 7 has been provided with conductor tracks which as is illustrated in the.