may be placed on the barrier layer material 580 the second metal pads 522 have bottom surfaces sidewall surfaces and top surfaces that are not covered by the multiple first metal vias 552 this increases the area of the interface between the first bond pad structure 500 and the surrounding insulating material furthermore the bottom surfaces and the sidewall surfaces of the second metal pads 522 may have a liner material with good adhesion to the insulating material as is typically the case in typical semiconductor processing flow therefore the adhesion of the first bond pad structure 500 is significantly higher than that from the bond pad structure 100 in fig1 2 known in the prior art resulting in higher mechanical strength and improved reliability of the structure under stress typical bond pads are made of an aluminum alloy while most of metal wiring within the back end of the line dielectric stack utilizes copper the higher adhesion strength between copper and dielectric material than that between the aluminum alloy and dielectric material is utilized in the bond pad structure according to the present invention while the area of adhesion is significantly increased a substantial portion of the area in the metal levels.