application_number US 45000603 A description fig1 a shows the initial structure insulating regions 1 comprising sio 2 were introduced into an si wafer 0 with methods which are usual in semiconductor technology the wafer is covered over its entire area with a further sio 2 layer 2 and a layer 3 comprising si 3 n 4 a first mask of photolacquer 4 was produced using the methods usual in semiconductor technology the nitride layer was preferably dry chemically etched out in the regions freed of photolacquer and then an n conductive region 5 produced by implantation with ions the damage produced in that implantation operation was restored after removal of the lacquer mask and suitable cleaning preferably by means of an rta step rta rapid thermal annealing the subjacent sio 2 layer is then removed by means of a suitable hydrofluoric acid bearing solution in which respect the previously structured nitride layer serves as a mask after the application of suitable cleaning procedures production of a single crystal layer stack is effected comprising an si buffer layer 6 a the sige base layer 6 doped with boron atoms and the si cover layer 6 b fig1 b a suitable configuration for the deposition process provides that during the epitaxial growth of the layers 6 a and 6 b a polycrystalline si sige si layer 7 is produced at the same time on the regions covered with sio 2 or si 3 n 4 what is essential for manufacture in accordance with the invention of the sige hbts is that in the sige layer deposition process the doping profile for the base of the bipolar structures in the vertical direction is enclosed.