power source voltage 3 3 v for example accordingly peripheral circuits on the data line side such as the decoder system need not have a high withstand voltage so that the area of the peripheral circuits can be reduced furthermore the occurrence of the electron hole pairs at the drain terminal at the time of data program erase as well as the degradation of the gate oxide film at the channel portion can be prevented and the drop of current drivability can be prevented even after the number of times of program erase of 10 6 times since the disturbance prevention voltage to be applied to the non selected word lines at the time of programming can be set to 3 3 v as the high voltage side power source the booster power source need not be employed and the write time can therefore be reduced furthermore one contact hole region is formed for a group comprising a plurality 16 to 128 of memory cells as one unit the occupying area of the contact holes in the memory cell array can be reduced and further miniaturization of the memory cells becomes possible so that a large capacity nonvolatile memory such as a 64 m or 256 m memory can be accomplished the large scale nonvolatile semiconductor memory chip fabricated in accordance with the present invention makes it possible to accomplish a large capacity file system and a file card used for small portable appliances to constitute a data preservation file system for an electronic still camera for processing large quantities of image data and further to produce a card type portable recoder reproducer for high quality.