techniques the concentration of photoactive compound was varied between about 17 to about 25 by weight of the resist material an increased amount of photoactive compound increased the degree of permeability modification within the polymeric resist material for purposes of this example the 25 concentration of photoactive compound is preferred the polymeric resist material was applied using 2 ethoxyethyl acetate n butyl acetate about 90 10 solvent to form a solution of the polymeric resist material for spin coating the concentration of polymeric resist material was about 30 by weight of the solution application of the resist to the silicon wafer was followed by an oven bake at temperatures ranging between about 80 u00b0 c to about 105 u00b0 c for a period ranging from about 25 minutes to about 40 minutes to remove the solvent used during spin coating higher bake temperatures decreased the overall permeability of the polymeric resist material for purposes of this example a bake temperature ranging between about 80 u00b0 c and about 85 u00b0 c for a period of about 30 minutes is preferred the thickness of the dry resist material layer was about 2 micrometers the polymeric resist material was exposed to patterned radiation using a commercially available reflective scan projection tool and 34 deep 34 uv exposure 220 to 280 nm the.