films this method allows reoxidation of the si 3 n 4 layer and nitrogen incorporation at low temperatures between approximately 200 u00b0 and 750 u00b0 c without compromising the film integrity as explained previously the si 3 n 4 layers are reoxidized after deposition to improve their dielectric qualities for example the reoxidation operates to reduce defects such as pinholes and leakage current the reoxidation of the si 3 n 4 layers typically is accomplished by high temperature treatment in steam or an oxygen o 2 ambient environment with existing fabrication techniques the si 3 n 4 films cannot be reduced below approximately 65 u00e5 because a si 3 n 4 layer thinner than this cannot withstand the subsequent oxidation step used to improve the dielectric qualities of the si 3 n 4 layer but as discussed above thinner layers are increasingly required to meet industry specification standards due to this method 39 s accommodation of lower temperature reoxidation this method permits si 3 n 4 films to be fabricated thinner than the previous minimum of approximately 65 u00e5 the si 3 n 4 films have not been previously fabricated any thinner than approximately 65 u00e5 because when made thinner the si 3 n 4 layer could not tolerate the prior art higher temperature reoxidation methods higher than approximately 750 u00b0 c necessary to insure the integrity and quality of the dielectric layer in the case of forming a high quality dielectric on a silicon containing substrate by direct.