insulating member 24 and emitted to the outside of the light emitting device therefore a decrease in a light emitting efficiency caused by a total reflection can be prevented for example the insulating member 24 can be formed with a base angle of approximately 30 u00b0 such that the light generated from the active layer 25 is reflected on an inclination side of the insulating member 24 and emitted to the outside of the light emitting device remarkably enhancing the light emitting efficiency the first embodiment of the present invention illustrates the trapezoid having a bottom side longer than a top side as the pattern of the insulating member 24 but is not limited thereto the pattern of the insulating member 24 can be a reverse mesa or a rectangle the insulating member 24 with the predetermined pattern can be formed of silicon oxide or silicon nitride that have an excellent insulating characteristic and do not absorb light for example the insulating member 24 with the predetermined pattern can be formed of one of sio 2 and si x n x therefore the insulating member 24 can effectively reflect the light generated from the active layer 25 to remarkably enhance the light emitting efficiency a method of forming of the insulating member 24 with the predetermined pattern will be described an insulating member not shown is formed on the n type gan cladding layer 23 and a photoresist pattern not shown having a predetermined pattern is formed on the insulating member next the insulating member is etched using the photoresist pattern as a mask and the photoresist pattern is removed to form the insulating member 24 with the predetermined pattern in order to form the insulating member 24 anisotropy wet etching.