substrate is taken out of the second film formation apparatus and is inspected in terms of the mr properties as illustrated in fig3 c after forming a co layer that is the topmost layer of the co pt multilayer 110 a of the second stacked structure 21 comparatively thick the substrate may be taken out of the first film formation apparatus and then be inspected for properties thereafter the first stacked structure 11 is formed starting from the ta layer 107 after a part of the co layer is etched in the second film formation apparatus fig4 is a schematic configuration diagram of a manufacturing system 400 including single core sputtering apparatuses 410 and 420 as the first and second film formation apparatuses used in the method of manufacturing a perpendicular mtj device according to the embodiment in manufacture of the top pinned perpendicular mtj device 100 a the sputtering apparatus 410 is the first film formation apparatus to form the first stacked structure 10 and the sputtering apparatus 420 is the second film formation apparatus to form the second stacked structure 20 on the other hand in manufacture of the bottom pinned perpendicular mtj device 100 b the sputtering apparatus 410 is the first film formation apparatus to form the second stacked structure 21 and the sputtering apparatus 420 is the second film formation apparatus to form the first stacked structure 11 the manufacturing system 400 further includes property inspection apparatuses 430 and 440 in manufacture of the top pinned perpendicular mtj device 100 a the property inspection apparatus 430 is a cipt measuring device for inspection of the mr properties and the.