of the substrate prior to the exposing and removing contamination from the conductive region after the forming application_number US 201213717378 A description systems and methods for molecular self assembly are described below for use in forming material s on a substrate the use of the systems and methods for molecular self assembly collectively referred to herein as u201c molecular self assembly u201d enables production of very small structures and features on substrates e g at the nanometer size scale at very low cost which can be useful in the commercial manufacturing of a variety of products such as electronic components and flat panel displays a system for performing molecular self assembly is referred to herein as a u201c molecular self assembly system u201d or u201c msas u201d and examples of such systems are described in the related applications and elsewhere herein the molecular self assembly described herein includes thin film deposition methods for use in the manufacture of integrated circuits semiconductor devices flat panel displays optoelectronic devices data storage devices magnetoelectronic devices magnetooptic devices molecular electronic devices solar cells photonic devices packaged devices and the like the molecular self assembly of an embodiment provides for formation of a conformal thin film of a desired composition and thickness on a substrate by initially forming a layer comprised of nanometer scale particles and subsequently treating the formed layer so as to coalesce the nanometer scale particles and remove any undesired.