of an electronic control circuit 8 according to an embodiment of this invention the control circuit 8 comprises a microcontroller 9 such as a compatible motorola hc05 microcontroller which is connected to an electronic memory device 10 through data lines d bus address lines addr bus and control lines cntrl bus in fig2 individual components of the electronic memory device 10 are shown this device 10 comprises a matrix 1 of memory cells e g a 4 kbyte eprom cell matrix this eprom matrix 1 is controlled by a control register 2 and connected to the lines d bus addr bus and cntrl bus advantageously a switch element 3 is provided which has a first terminal 4 connected to a voltage reference vs a second terminal 5 connected to the control register 2 of the eprom and a third terminal 6 connected to the terminal for the program voltage vpp of the eprom 1 in particular the switch element 3 can be a mos transistor advantageously the mos transistor is a p channel transistor because this type of transistor can be readily integrated to operate on the program voltage vpp of the eprom 1 and has a relatively small intrinsic operational resistance r dson which allows more accurate provisions to be made for reliability after integrating the memory device 10 on the die the mos transistor may be a high voltage transistor for example connected to the microcontroller 9 are a conventional oscillator 11 necessary to the operation of the microcontroller 9 and a conventional reset unit 12 shown at 16 is the power section of the control circuit 10 which section is controlled from a logic block 17 and an over voltage over.