the direction of the optical path the color image sensor is configured such that a potential difference caused between the lower and upper motion control electrodes 7 a and 7 b can change the gap distance between the lower and upper interferometric films 1 a and 1 b specifically if such a potential difference is caused between the two electrodes an electrostatic force is applied between the two electrodes to deform the support structures 8 and thereby moves the upper interferometric film 1 b up and down to change the gap distance this change in the gap distance between the lower and upper interferometric films 1 a and 1 b changes the wavelength of interfered light beams in this way the wavelength of the light beams transmitted through this color filter is made variable as shown in fig1 a and 1c the light shielding metal layers 3 are formed in the interlayer insulating film 4 to prevent light beams transmitted through each adjacent microlenses 2 from interfering with one another in addition a distance meter 40 for measuring a distance between the lower and upper interferometric films 1 a and 1 b is also disposed as shown in fig1 c in the color image sensor with the above configuration light beams incident from the respective microlenses 2 are caused to have a certain limited wavelength by the color filter 20 when the light beams is being transmitted therethrough and then reach the photodiode regions 5 thereafter the light beams are photoelectrically converted in the respective photodiode regions 5 to be detected as electrical image data signals then by detecting electrical image data signals as described above after the distance between the lower and upper interferometric films 1 a and 1 b is changed.