and partially removing the impurities at the surface portion of substrate 100 using the hydrogen plasma treatment of the present invention a refractory metal layer 112 e g a titanium ti layer is deposited on the exposed surface of the wafer this deposition is made to a thickness of about 40 to about 90 angstroms at a temperature of about 580 u00b0 c to about 640 u00b0 c via a pecvd process on the exposed surface of the semiconductor substrate 100 the sidewall and the bottom of the contact hole 106 and the insulating layer 104 specifically after completing the hydrogen plasma treatment a depositing source gas e g ticl 4 gas is introduced into the chamber 50 shown in fig2 at a flow rate of about 4 5 sccm for about thirty seconds an rf plasma power of about 350 w is applied to the rf electrode while the bias power is grounded to deposit the refractory metal such as titanium ti a reaction between silicon atoms and the deposited titanium atoms occurs at an interfacial surface of the titanium layer and the exposed silicon area to form a refractory metal silicide layer such as a titanium silicide tisi x the titanium layer 112 is.