from applied materials inc of santa clara calif other process chambers may be used including for example capacitively coupled parallel plate chambers and magnetically enhanced ion etch chambers as well as inductively coupled plasma etch chambers of different designs examples of such suitable processing chambers are disclosed in u s patent application ser no 09 325 026 filed on jun 3 1999 which is incorporated by reference to the extent not inconsistent with the claims and disclosures described herein although the processes are advantageously performed with the dps u2122 processing chamber the description in conjunction with the dps u2122 processing chamber is illustrative and should not be construed or interpreted to limit the scope of aspects of the invention fig1 is a schematic cross sectional view of one embodiment of a process chamber 160 having a substrate support member disposed therein and a substrate handler blade 300 positioned adjacent thereto the process chamber 160 generally includes a cylindrical side wall or chamber body 162 an energy transparent dome ceiling 163 and a chamber bottom 167 an inductive coil 176 is disposed around at least a portion of the dome 163 the chamber body 162 and chamber bottom 167 of the chamber 160 can be made from a metal such as anodized aluminum and the dome 163 can be made of an energy transparent material such as a ceramic or other dielectric material a substrate support member 100 such as a cathode assembly is disposed in the chamber 160 to support a substrate 222 during processing a plasma zone 164 is defined by the.