similar to the 34 bell criterion 34 j r brews et al iedm washington d c december 1979 if l sub u03b1 or l is large enough such that the subthreshold mosfet current will have a negligible dependence on the drain supply voltage v d the criterior for l or l sub u03b1 being large enough depends upon the channel dopant concentration and its profile with respect to depth into the silicon from the si sio 2 interface a sloped gate edge connector can readily be fabricated by the technique according to the present invention an image reversal resist technique using electron beam exposure of a positive photoresist followed by an optical uv flood exposure results in the positive photoresist behaving as a negative resist w g oldham e heike ieee trans edl 1 10 217 1980 the resist edge profiles using this method are sloped with some angle u03b1 from the vertical if a dry etching technique fineline lithography roger newman ed north holland publishing co amsterdam 1980 chap 4 r l maddox m r splinter such as ion milling reactive ion etching parallel plate plasma etching or reactive ion beam etching is used an etched gate conductor profile with slope of angle u03b1 cam be faithfully reproduced from the resist profile in addition the characteristic of sloped gate conductor edge profiles allows for a much relaxed step coverage condition in consideration of conductor layers deposited on top.