example the metal can be stainless steel aluminum molydenum titanium or silicides including oxides of these metals as merely an example the dielectric material can be glass quartz organic polymer or ceramics as merely an example the semiconductor can be silicon including amorphous silicon polysilicon metallurgical silicon and other forms of silicon of course there can be other variations modifications and alternatives in a preferred embodiment the method includes delaminating 1200 a portion of the crystalline material from the semiconductor substrate as illustrated in fig1 in a specific embodiment delamination occurs using thermal chemical mechanical gravitational electromagnetic or other energy sources including combinations of such sources in a preferred embodiment delamination occurs using thermal treatment by subjecting the bonded structure from 200 to 500 degrees celsius for a period from 10 to 100 minutes to cause release at the cleave region from the remaining substrate portion as shown as shown the delamination occurs while the portion of the thickness of crystalline material remains attached to the support substrate to cause formation of a textured surface region from the portion of the thickness of crystalline material of course there can be other variations modifications and alternatives as also shown the method includes passivating 1209 one or more internal surface regions of the worm hole structure according to an embodiment of the present invention in a specific embodiment the passivating can occur using hydrogen treatment or other treatment process.