and a tio 2 film 35 insulating body by two or more layers and a ti film 33 metal is formed on both surfaces as a transparent conductive film since the outer surface of the conductive optical filter 32 is configured by the ti film 33 the ti film 33 and the light shielding metal 18 contact and the conductive optical filter 32 is grounded when the conductive optical filter 32 is formed on the light shielding metal 18 the multilayer film filter is configured by stacking a plurality of materials having different index of refraction in addition to sio 2 and tio 2 described above metal oxide such as mgo cro 2 al 2 o 3 ceo 2 hfo 2 nb 2 o 5 sno 2 ta 2 o 5 y 2 o 3 and zro 2 and nitride such as sin and tin can be used for the multilayer film material furthermore metals such as al ag cu mo and cr can be used other than ti for the material of the upper and lower transparent conductive films such multilayer film materials and transparent conductive materials are formed during the production process of the light sensor 31 and thus need to have resistance.