orientation film ori 1 of the tft substrate sub 1 and the orientation film ori 2 of the cf substrate sub 2 with respect to the liquid crystal lc which is driven by the thin film transistor tft the orientation direction of the liquid crystal lc is rotated by a component parallel to a surface of the substrate of an electrical field e which is generated between the pixel electrode px and the counter electrode ct in a plane parallel to the substrate surface thus controlling the lighting and non lighting of the pixel here the manufacturing process of the liquid crystal display device of the embodiment 1 is explained on an insulation substrate which is preferably made of glass a semiconductor island is formed by forming an a si or p si semiconductor film by patterning since a process for forming the insulation films and the gate electrodes and a process for forming the source electrodes sd 1 and the drain electrodes sd 2 on the semiconductor island are already known the explanation of these processes is omitted in the embodiment 1 the source electrode sd 1 and the drain electrode sd 2 of the thin film transistor tft are formed of a stacked film of mow alsi mow after forming the source electrode sd 1 and the drain electrode sd 2 a fourth insulation film is formed over the source electrode sd 1 and the drain electrode sd 2 a forming method of the fourth insulation film is explained hereinafter first of all an organic resin which is formed of polymethyl silazane is applied to the substrate.