utilized to control the aforementioned components of a plasma processing system 1 according to a stored process recipe one example of controller 55 is a dell precision workstation 610 u2122 available from dell corporation dallas tex fig5 shows a plasma processing system according to an alternate embodiment of the present invention the plasma processing system 1 further includes either a mechanically or electrically rotating dc magnetic field system 60 in order to potentially increase plasma density and or improve plasma processing uniformity in addition to those components described with reference to fig4 moreover the controller 55 is coupled to the rotating magnetic field system 60 in order to regulate the speed of rotation and field strength fig6 shows a plasma processing system according to an alternate embodiment of the present invention the plasma processing system 1 of fig4 further includes an upper plate electrode 70 to which rf power is coupled from an rf generator 72 through an impedance match network 74 a typical frequency for the application of rf power to the upper electrode ranges from 10 mhz to 200 mhz and is preferably 60 mhz additionally a typical frequency for the application of power to the lower electrode ranges from 0 1.