direction 122 of width of the stripe magnetic domain 2 when the residual stress acts on the perpendicularly magnetized garnet film the magnetization of the film surface accepting most strongly the stress falls in the in plane direction see the portion 150 in fig4 this phenomenon is called a magnetostriction effect in the case of a perpendicularly magnetized garnet film it is known that the magnetostriction effect is different depending on the crystalographic direction because of the tri fold symmetry of the crystal the directions which are liable to the magnetostriction effect are 112 and 112 211 and 211 and 121 and 121 when those crystalographic directions are parallel to the longitudinal direction 21 of a conductor pattern 14 as shown in fig5 a the magnetization is liable to be directed to the in plane direction accordingly when the conductor pattern 14 is formed in parallel to these crystalographic directions a strong in plane magnetization layer is formed just below the conductor 14 the direction of magnetization of this in plane magnetization layer is fixed therefore when a bloch line pair 4 passes just below the conductor 14 the bloch line pair 4 is trapped by the in plane magnetization layer thereby causing an erroneous operation on the other hand if the longitudinal direction 21 of the stripe magnetic domain 2 is selected to be.