deflects and makes contact to 1001 which acts as a gate v for the drain non volatile switch 1020 if the nonvolatile switch 1020 floats at a voltage equal to u2212 v it will be deflected by 1001 and will make contact to it writing a u201c 1 u201d nonvolatility is provided by van der waals force if the nonvolatile switch 1020 floats at a voltage equal to v it will be deflected by the gate 1030 u2212 v and will make contact 1002 which purpose is to avoid a short between the nonvolatile switch 1020 and the gate 1030 this process writes a u201c 0 u201d reading is performed by grounding 1020 and measuring continuity between 1010 and 1020 a u201c pull up u201d resistor at the drain or a resistive drain as in conventional cmos memory devices might be necessary cross sectional fig1 schematically illustrates the incorporation of an embodiment of the present invention on an exemplary multilayered interconnect structure which can be used to realize complex memory and logic operations the foregoing description of the preferred embodiment of the invention has been presented for purposes of illustration and description it is not intended to be exhaustive or to limit the invention to the precise form disclosed and modifications and variations are possible in light of the above teachings or may be acquired from practice of the invention the embodiments were chosen and described in order to explain the principles of the invention and its practical application to enable one skilled in the art to utilize the invention in various embodiments as are suited to the particular use contemplated it is intended that the scope of.