v characteristic results a red line of the gst single crystal nano structures with a diameter of 100 nm and the i v characteristic after the pulse voltage is applied is shown by a black line e is i v characteristic results in an initial crystal state and a final amorphous state after the pulse voltage is applied fig8 is set reset repeated experimental results of the gst single crystal nanowire with a diameter of 100 nm a reversible phase change from the initial crystal state to the amorphous state and back to the crystal state is confirmed through the difference of electric resistance in the process of manufacturing the gst nanotube when the temperature of the target member is 200 u00b0 c in embodiment 1 a 2 cm u00d7 2 cm si wafer with a thickness of 200 u03bcm is prepared after tin 100 nm ti 20 nm is deposited on the wafer the gst target member thin film with the composition of 2 2 5 confirmed through icp aes induced coupled plasma u2014 atomic emission spectroscopy with a thickness of 100 nm is then deposited thereon at this time the gst is deposited so that about 1 to 2 mm of the lower electrode for ground is exposed the deposited thin film as above is cut to a size of about 5 mm u00d7 5 mm thereafter it is mounted on the base 138 of fig1 the target member sample prepared as above is adhered to the upper portion of the heater using a silver paste.