to that without exposure to the flash lamp the transmittance is measured under a light transmission at a wavelength of 320 nm to 800 nm it reveals that the exposure to the flash lamp does not affect the transmittance of the conductive film fig3 a and 3 b are schematic diagrams of how annealing and patterning are carried out at the same time using the high energy flash lamp in fig3 a a physical mask 302 is situated along the light transmission between the flash lamp 301 and the conductive film 303 the physical mask can vary in shape pattern dimension and thickness the materials of the physical mask include but not limited to glass or metal fig3 b is an example of a pattern 304 on the film corresponding to the corresponding pattern of the physical mask in this example a physical mask with two large pads connected by one narrower strip with a length of 10 mm and a width of 2 mm is used to mask the film in order to generate the pattern 304 with substantially the same size and shape on the conductive film under the exposure of the flash lamp the average power density used in this example is 10 w cm 2 the sheet resistance rs of the conductive film under the exposure of the flash lamp is about 15 u03c9 u25a1 as shown in fig2 the percentage transmittance of the conductive film after exposure to flash light is larger than 80 which is measured under 400 800 nm of light.