with other components of the circuit configuration located below said middle part and said side part the first capacitor electrode is provided with a capacitor dielectric a second capacitor electrode borders the capacitor dielectric application_number US 9303902 A description referring now to the figures of the drawing in detail and first particularly to fig1 thereof there is shown a first exemplary embodiment with a first substrate 1 made of silicon provided as the starting material transistors t are produced according to the prior art in the region of a surface of the first substrate 1 the transistors t are only diagrammatically indicated in fig1 afterward an intermediate oxide z made of sio 2 and having a thickness of approximately 200 nm is produced on the first substrate 1 see fig1 a stop layer s is produced above the intermediate oxide by depositing silicon nitride to a thickness of approximately 30 nm see fig1 an auxiliary layer h is produced above that by depositing bpsg borophosphorus silicate glass to a thickness of approximately 800 nm see fig1 by means of a photolithographic method depressions v are produced which cut through the auxiliary layer h the stop layer s and the intermediate oxide z and reach as far as.