finally increased in an instantaneous step like fashion at 16 to highest level of current i 3 from fig1 it can be seen that a series of u201c discontinuities u201d occur in the applied current respectively at 12 14 and 16 these discontinuities and the rapid changes in current flow result in relatively sharp boundaries between grain structures of differing sizes these relatively sharp boundaries and differing grain structures produce stresses in the microstructure of the film which can impair film quality and even result in film defects in accordance with the present invention a novel method of electroplating conductive material on a semiconductor wafer controls transition in the applied current during successive stages of the electroplating process which substantially reduces or eliminates sharp changes in the grain structure of the plated film referring to fig2 in accordance to the present invention an initial positive continuous level of current is applied to the plating circuit at 18 for an initial period of time which could be considered the first step or stage in the plating recipe cycle the current is then gradually increased at 20 in a straight line or linear fashion over a period of time until the current increases to a second higher level i 1 representing the second stage in the plating cycle similarly the current is increased from i 1 to a higher level i 2 in a gradual linear manner indicated at 22 finally the current is increased from i 2 in a linear gradual manner designated at 24 until current level i 3 is achieved representing the fourth and final stage of the plating process generally during the first stage indicated at 18 an initial thin film layer is formed in the second.