and lead zinc niobate as used herein a high dielectric constant oxide is one with a dielectric constant of at least ten the reservoir 12 a communicates with the chamber 20 via line 16 a whose flow is controlled by a high speed valve 14 a due to the presence of the high speed valves 14 a and 14 b pulses of metal precursor or oxidant may be supplied to the chamber 20 in any desired sequence referring to fig2 in accordance with one embodiment of the present invention the formation of metal oxide films may be accomplished using a first pre stabilization stage 22 followed by a film deposition stage 24 in turn followed by a post stabilization stage 26 in some embodiments of the present invention the pre stabilization stage 22 may be shortened relative to conventional techniques in some embodiments the pre stabilization time at temperature may even be minimized before deposition begins to maximize surface hydroxyl termination for the first cycles of dielectric film deposition during the pre stabilization stage 22 the wafer w is loaded into the chamber 20 as indicated at 21 a pulse of oxidant a may be followed by a short purge cycle p this oxidant purge sequence may be repeated four or more times in some embodiments during the pre stabilization stage the wafer w is being heated and the chamber 20 is being prepared for film deposition in one embodiment the pre stabilization stage may use water as the oxidant thus a purge cycle may follow each oxidant pulse providing the oxidant during the pre stabilization stage may increase surface hydroxyl termination for early stages of film growth in some embodiments after the pre stabilization stage 22 a.