localized heating provides an excellent way to accomplish the high temperature bonding requirement while maintaining low temperature at the wafer level therefore fast reaction and strong bonding are expected to occur locally there are many ways to achieve localized heating including using microheaters or a focused micro laser the key structural design is to prevent the heat losses to the environment or substrate an insulation layer such as a silicon dioxide underneath the heating element serves well for this purpose as illustrated in fig3 in accordance with the present invention further design optimizations of course can be implemented based on basic heat transfer principles to improve the effectiveness of localized heating in some embodiments direct silicon fusion and eutectic bonding techniques are conducted where the heating elements also serve as the bonding materials one drawback for the direct bonding technique is that the bonding materials may diffuse or melt during the process therefore the resistance of the microheater changes and it is very difficult to control the bonding temperature and process the same localized heating techniques are also shown by adding soldering materials for indirect bonding since the microheaters can be preserved during the indirect bonding process good temperature and process control are expected these methods are very well suited to encapsulation of microresonators in a vacuum environment with hermetic sealing to package microresonators the method of the invention is usable to prepare a micropackage microshell as shown in fig1 and 11 fig1 a shows a silicon wafer with an oxide layer and a cavity the structure of fig1 a is prepared by first growing an oxide layer on the.