transistor 1 is greater than the thickness of the gate insulating layer of the switching thin film transistor 2 in the oled array substrate regardless of whether a type of the switching thin film transistor 2 is the same type as that of the driving thin film transistor 1 or not it should be further noted that in addition to the thickness of the gate insulating layer other factors such as an active layer may affect the magnitude of the s factor of a thin film transistor the thickness of the gate insulating layer is merely taken as an example in the present embodiment of course all implementations in which it is ensured that the s factor of the switching thin film transistor 2 is smaller than the s factor of the driving thin film transistor 1 fall within the protection scope of the present invention the oled array substrate provided by the present embodiment further includes elements such as a storage capacitor an organic electroluminescent device and the like all implementations in which the thickness of the gate insulating layer of the driving thin film transistor 1 is greater than the thickness of the gate insulating layer of the switching thin film transistor 2 in the oled array substrate fall within the protection scope of the present invention as shown in fig3 the present embodiment provides a manufacturing method of an oled array substrate which includes the switching thin film transistor 2 and the.