an active layer and a third semiconductor layer can be readily formed by conventional methods a process for forming a textured structure of a semiconductor light emitting diode according to another embodiment of the present invention will now be described with reference to fig5 a through 5d referring to fig5 a a first semiconductor layer 52 is formed on a substrate 51 the first semiconductor layer 52 is formed of in x al y ga 1 x y n 1 x y 0 u2266 x u2266 1 0 u2266 y u2266 1 x y u2266 1 undoped doped with an n type dopant or doped with a p type dopant to a thickness of approximately 10 nm to 5 u03bcm next first and second material layers 54 and 55 are formed on the first semiconductor layer 52 the first and second material layers 54 and 55 can be formed of a material including at least one metal selected from ni pd ag and au crystal defects such as dislocations are typically generated in the first semiconductor layer 52 formed on the substrate 51 particularly screw dislocations which affect the characteristics of the semiconductor light emitting diode the crystal defects such as the screw dislocations are caused by the difference in crystal structure between the sapphire used for forming the substrate 51 and gan used for forming the first semiconductor layer 52 referring to fig5 b a.