102 a may be implanted with a desired dose of dopant while second region 104 a may receive little or no implanted dopants the method of the present disclosure may also comprise a second stage in one embodiment the second stage may be performed after the first stage in another embodiment the first and second stages may be performed simultaneously yet in another embodiment the second stage may be performed prior to the first stage the process that may be performed during the second stage in the present embodiment may be a deposition process in another embodiment however the second process technique may be another different type of process during the second stage as shown in fig1 c a thin film 106 may be formed on the first surface section 102 although a thin film 108 may also be formed on the second surface section 104 the rate of the film 108 formed on the second surface section 104 may be less than the rate of the film 106 formed on the first surface section 102 accordingly if a film 106 and 108 is formed on both the first and second sections 102 and 104 respectively the film 106 formed on the first section 102 may be thicker than that formed on the second section 104 the second stage may continue until the thickness of the film 106 formed on the first surface section 102 is greater than 80 u00e5 in another embodiment the second stage may continue until the thickness of the film 106 formed on the first surface section 102 is approximately 10 times greater or more than that of the film 108 formed on the second surface section 104 yet in another embodiment.