the width of the street 424 is in a range between approximately 12 u03bcm and approximately 50 u03bcm in the manufacturing stage shown in fig4 a the silicon wafer 410 has a thickness e g the distance between the top surface 412 and the first bottom surface 414 in a range between approximately 250 u03bcm and approximately 1000 u03bcm as discussed above to thin the silicon wafer 410 the bottom surface 414 is ground until a desired thickness is reached as shown in fig4 b grinding tape 426 is applied over the top surface 412 and the layers 416 418 the grinding tape 426 protects the first ic area 420 and the second ic area 422 while the silicon wafer is thinned by grinding the first bottom surface 414 using for example a grinding machine the grinding tape 426 is transparent to infrared light suitable back side grinding tape is available from for example furukawa electric co ltd of tokyo japan lintec corp advanced materials div of tokyo japan and toyo adtec co ltd of kamakura japan in one embodiment the grinding tape 426 is substantially transparent to infrared light with wavelengths ranging between approximately 1 2 u03bcm and approximately 1 3 u03bcm as discussed below the silicon wafer 410 is also substantially transparent to these wavelengths the first bottom surface 414 is ground until a desired reduced thickness represented by dashed line 428 in fig4 b is achieved as shown in fig4 c 4g the grinding process produces a second.