be released thereby increasing the chance of the abnormal discharge to be occurred however as in the present embodiment the conductive film is formed in the course of the ti film deposition of for example 500 u02dc 3000 pieces of the wafers w and the possibility of releasing the electrical charges from the wafer w to susceptor 2 is increased when the wafer w is loaded on susceptor 2 as a result the possibility of the abnormal discharge to be occurred becomes distinguishably reduced also the short precoating may be performed without the nitriding process to form the ti film of a predetermined thickness 1 formation of the ti film i high frequency power from high frequency power supply 34 frequency 300 khz u02dc 27 mhz power 100 w u02dc 1500 w ii gas flow rate of ticl 4 gas 1 u02dc 20 ml min sccm iii gas flow rate of ar gas 100 u02dc 2000 sccm iv gas flow rate of h 2 gas 250 u02dc 5000 ml min sccm v pressure inside the chamber 440 u02dc 4333 pa 3 u02dc 10 torr 2 nitriding process i high frequency power from high frequency power supply 34 frequency 300 khz u02dc 27 mhz power 400 w u02dc 1500 w ii gas flow rate of nh 3 gas 100 u02dc 2000 ml min sccm iii gas flow rate of ar gas 100 u02dc 2000 ml min sccm iv gas flow rate of h 2 gas 250 u02dc 5000 ml min sccm v pressure inside the chamber 440 u02dc 1333 pa 3 u02dc 10 torr in view of preventing the abnormal discharge the frequency of forming the conductive film is better to be often however since the.