it will be understood that when a layer or film a region a pattern or a structure is referred to as being u201c on u201d or u201c under u201d another substrate another layer or film another region another pad or another pattern it can be u201c directly u201d or u201c indirectly u201d on the other substrate layer or film region pad or pattern or one or more intervening layers may also be present such a position of the layer has been described with reference to the drawings the thickness and size of each layer shown in the drawings can be exaggerated omitted or schematically drawn for the purpose of convenience or clarity in addition the size of elements does not utterly reflect an actual size hereinafter the embodiment will be described with reference to accompanying drawings fig1 is a sectional view showing a semiconductor light emitting device 100 according to the embodiment referring to fig1 the semiconductor light emitting device 100 includes a first conductive semiconductor layer 110 an active layer 120 a second conductive semiconductor layer 130 a channel layer 140 an electrode layer 150 a conductive support member 170 and a first electrode 115 the first conductive semiconductor layer 110 may include.