strip 136 at which the radio frequency output signal rf out is provided the dc feed 138 provides a defined load for the rf transistor and the rf frequency and harmonics thereof ideally this load would be a short at baseband frequencies however in order to provide a satisfactory load at the radio frequency and harmonics thereof the baseband impedance is required to be significant in order to provide an acceptable match to the low internal load impedance of the output of the transistor an internal match network is typically provided internal to the transistor this is best illustrated by an equivalent circuit of the power amplifier circuit as represented in fig2 fig2 shows a typical equivalent circuit of the output of a power amplifier circuit including the elements internal to the transistor package 102 as represented in fig2 the equivalent circuit includes a transistor 210 a capacitor 206 is connected in parallel across the source and drain of the transistor the capacitor 206 represents the internal parasitic capacitance to the bulk of the transistor 210 the output of the transistor 210 namely the transistor drain is taken on line 212 and connected to the dc power supply it should be noted that the dc supply is connected to the output of the transistor via a supply feed inductance not shown in fig1 and 2 a series inductance represented by inductor 202 is connected to the drain of the transistor 210 this inductor 202 is representative of the inductance of the bond wire 110 connecting the output of the transistor power amplifier to a capacitor of the capacitor bank 108 a capacitor 208 is connected in parallel across the inductor 202 and the source of the transistor 210 the capacitor 208 represents one of the capacitors of.