highly selective to the insulating layer 64 with respect to the patterned resist layer 66 it is to be appreciated that any suitable etch methodology for selectively etching the insulating layer 64 over the patterned photoresist layer 66 may be employed and is intended to fall within the scope of the hereto appended claims for example the insulating layer 64 at the first opening 68 and the second opening 70 is anisotripically etched with a plasma gas es herein carbon tetrafloride cf 4 containing fluorine ions in a commercially available etcher such as a parallel plate rie apparatus or alternatively an electron cyclotron resonance ecr plasma reactor to replicate the mask pattern of the patterned photoresist layer 66 to thereby create a first via 72 and a second via 74 in the insulating layer 64 fig5 0039 fig6 illustrates a stripping step 100 e g ashing in an o 2 plasma to remove remaining portions of the photoresist layer 66 fig6 illustrates a partially complete reference wafer 60 u2032 after the stripping step 100 is substantially complete next a deposition step 120 is performed on the structure 60 u2032 fig7 to form a conductive layer 76 over the structure 60 u2032 preferably the conductive layer.