contact portion of the first conductive nanowire and having a first window substantially in correspondence with the contact portion of the first conductive nanowire and a first conductive die on the insulating layer that includes a conductive contact extending into the first window and contacting the contact portion of the first conductive nanowire application_number US 56850809 A description the here described steps do not form a complete flow of a method for realizing an electric connection in a semiconductor electronic device between a nanometric circuit architecture and standard electronic components and only those steps needed by an average technician of the field for the comprehension of the invention are hereafter described it is important to note moreover that the figures represent schematic views of portions of an electronic circuit integrated in a semiconductor device during some steps of a method according to one embodiment of the invention and they are not drawn to scale but on the contrary realized in such a way as to stress the characteristics of one embodiment of the invention the present invention can be implemented by using several techniques usually used in the manufacturing of semiconductor electronic devices in particular all the lithographic methodologies optical lithography uv euv electronic ionic imprint and the multi spacer patterning technology s n pt in particular this latter technology is employed to realize nanowires of a nanometric circuit architecture which is electrically connected to standard electronic components of a micro area although known.