solution of 20 mg of poly 3 hexylthiophene 2 5 diyl in 3 5 ml of chloroform the solution is applied to a silicon wafer which has been prepared by the formation of transistor structures bottom contact using a syringe and centrifuged at 2000 rpm the film is then conditioned at 75 u00b0 c under a nitrogen atmosphere for 4 minutes producing a film including a mixture of inorganic semiconducting nanoparticles and organic semiconductors 10 mg of the hexyl functionalized silicon nanoparticles obtained in example 14 are dissolved in a solution of 20 mg of poly 3 hexylthiophene 2 5 diyl in 2 ml of chloroform the solution is applied to a silicon wafer which has been prepared by the formation of transistor structures bottom contact using a syringe and centrifuged at 2000 rpm then the film is conditioned at 75 u00b0 c under a nitrogen atmosphere for 4 minutes producing a film including a mixture of inorganic semiconducting microparticles and organic semiconductors 20 mg of the hexyl functionalized silicon microparticles obtained in example 10 are suspended in a solution of 20 mg of poly 3 hexylthiophene 2 5 diyl in 2 5 ml of chloroform this suspension is applied to a silicon wafer which has been prepared by the formation of transistor structures bottom contact using a syringe and centrifuged at 2000 rpm the film is then conditioned at 50 u00b0 c under a nitrogen atmosphere for 4 minutes producing a.