these processes allow reaching lateral size above the micrometer while keeping the thickness constant and controlled within an atomic monolayer it is also possible to control the thickness of the obtained nanosheets by controlling some synthesis parameters such as the precursor nature the reaction temperature and or the presence of nanocrystals in the reaction mixture these growth processes according to the current invention allow obtaining without post synthesis purification pure nanosheets free of any parasitic isotropic nanocrystals the new process of crystalline growth confronts the paradigm nucleation growth by quick injection of precursors at high temperature which is currently used in all organic syntheses of colloidal semiconductor nanocrystals indeed in one embodiment of the current invention the precursors are slowly introduced in the flask during the synthesis the nucleation rate is controlled by the temperature of the flask and the injection speed the system steers to a growth state at equilibrium in which all the injected precursors are consumed by the nanosheets growth the initial nucleation leads to enough seeds in the reaction medium to consume at any time the introduced precursors the final size of the nanosheets its lateral dimensions is consequently controlled by the introduced precursors moreover the growth process proposed also confronts the descriptions of syntheses of nanosheets by the method of lt lt soft templating gt gt in which a solution lamellar complex it can be done with the acetate salt leads the growth to the formation of nanosheets in one embodiment of the current invention a solution of precursors including finely ground and well dispersed acetate salt is slowly.