100 may be annealed to relieve stress in the substrate 102 densify the field oxide 110 and improve the substrate surface 114 for epitaxial growth in a subsequent step fig1 e depicts the ic 100 after an seg layer 118 is grown on surface 114 of the substrate 102 growth of the seg layer 118 is accomplished using known techniques of selective epitaxial growth in the presence of oxide and nitride such that little or no silicon material is formed on top surfaces of the active area hard mask 108 or the field oxide 110 for example by using a mixture of sih4 gas and hcl gas at a temperature of 1020 c or a mixture of sih2cl2 gas h2 gas and hcl gas at a temperature of 950 c the use of other known selective epitaxial growth techniques is within the scope of this invention in one embodiment the seg layer 118 may be substantially pure silicon in another embodiment p type dopant atoms such as boron or gallium may be added in a further embodiment germanium or carbon atoms may be added to improve a material property of the seg layer 118 such as increase stress in the seg layer 118 which can be advantageous by increasing transistor on state drive current growth rates of the seg layer 118 range may from 1 to 100 nanometers.