and the at least one opening being ready for depositing one or more seed layers and the method includes depositing by a pvd technique in a pvd chamber a continuous pvd seed layer over the sidewalls and bottom of the at least one opening using a first set of deposition parameters and depositing by a pvd technique in a pvd chamber another pvd seed layer over the substrate using a second set of deposition parameters wherein the second set of deposition parameters includes at least one deposition parameter which is different from any of the parameters in the first set of deposition parameters or the second set of deposition parameters includes at least one deposition parameter whose value is different in the two sets of deposition parameters at least one of the pvd seed layers includes a material selected from a group consisting of cu ag or alloys including one or more of these metals the pvd seed layers have no substantial overhangs sealing or pinching off the top corners of the at least one opening the combined thickness of the seed layers over the field is sufficient to enable uniform electroplating across the substrate and the combined seed layers inside the at least one opening leave sufficient room for electroplating inside the at least one opening application_number US 47157109 A.