layers 461 is opposite from the growth direction 405 fig4 j shows the seventh step of method a in yet another embodiment of method a step a 7 the surface 403 of the layered structure 402 is further processed toward making electronic or optoelectronic devices this processing may include removing some or part of layers shown for example with 472 of the layered structure 402 depositing metals or dielectrics onto the resulting surface shown with 471 or any other process used in the manufacture of wide gap semiconductors both steps a 6 and a 7 may occur in a process in that case surface 463 may be the surface being processed in step a 7 rather than surface 403 method b as an alternative to method a method b is illustrated with the help of fig5 a through 5h fig5 a shows the first and second steps of method b steps b 1 and b 2 in the first step b 1 of method b a substrate 500 is provided comprising a silicon wafer 501 and a layered structure 502 on the top surface 503 of the silicon wafer 501 in one embodiment the layered structure 502 comprises at least one layer made out of gallium nitride and in another embodiment the layered structure 502 comprises at least one layer made out of aluminum nitride in yet.