diffusion region 531 of each cell transistor is coupled to the bottom capacitor electrode be and the drain e g second diffusion region 532 of each cell transistor is coupled to the top capacitor electrode te alternatively the source of each cell transistor is coupled to the top capacitor electrode while the drain is coupled to the bottom capacitor electrode to interconnect one cell to the another one type of capacitor electrode of one cell is coupled to another type of electrode of an adjacent cell if for example the be is coupled to the first diffusion region and the te is coupled to the second diffusion region in each cell the top electrode of the capacitor in the first cell 505 1 of the chain is coupled to be of the capacitor of second cell 505 2 alternatively the first capacitor electrode is the top electrode and the second capacitor is the bottom electrode gates 533 of the cell transistors can be gate conductors which serve as or are coupled to wordlines a first end of 508 of the chain is coupled to a bitline 560 in one embodiment a selection transistor 504 is coupled between the first end of the chain and.