the present invention the semiconductor dynamic random access memory device implementing the second embodiment is similar to the first embodiment except a power transfer circuit 6 a for this reason other components of the second embodiment are labeled with the same references designating corresponding components of the first embodiment without detailed description description is hereinbelow focused on the power transfer circuit 6 a the power transfer circuit 6 a includes a step up circuit 61 a and the switching unit 7 the switching unit 7 is implemented by an n channel enhancement type field effect transistor the step up circuit 61 a is responsive to the enable signal 401 so as to boost the gate control signal line 102 over the external high power voltage then the switching element 7 turns on and the external high power voltage is transferred to the internal power supply line 202 the step up circuit 61 a is similar in circuit configuration to the step up circuit 61 for this reason if the control signal line 101 is rewritten to u201c enable signal 401 u201d the waveforms in fig5 are applicable to the step up circuit 61 a the power transfer circuit 6 a discriminates the external high power voltage and makes up the current as similar to the power transfer circuit 6 for this reason user can bring the set 50 of word lines to the burn in test after the packaging the power transfer circuit 6 a is simpler than the power transfer circuit 6 and occupies an area narrower than the area occupied by the power transfer circuit 6 fig7 shows yet another step up circuit 61 b available for the semiconductor dynamic random access memory devices.