the magnetization states and the data stored therein can be sensed by measuring the electrical resistance of the cells magnetroresistive materials may include colossal magneto resistive u201c cmr u201d thin films and oxidation thin films having perovskite structure cmr thin films may be formed by pvd sputtering or magnetron sputtering method with reactive gases such as ar n2 o2 or he at the pressure of 1 mtorr to 100 mtorr the deposition temperature may range from room temperature to 600 u00b0 c depending on the post deposition treatment condition the collimator with aspect ratio of 1 to 5 may improve the fill in performance in addition the dc bias of tens of volts to hundreds of volts may also be used to improve the fill in performance further a magnetic field of tens of gauss to tesla may be applied to improve the magnetic crystallize state the post deposition annealing treatment with vacuum or n2 ambient or o2 n2 mixed ambient may improve the crystallize state of cmr materials in addition a buffer layer of ybacuo3 with thickness of 30 nm to 200 nm may be deposited before deposition of cmr materials to improve the crystallize of cmr materials similarly the oxidation thin films having perovskite structure may be deposited by same method discussed above or formed by oxidation discussed below polymer materials may have variable polarization states with application.