26 which bears flat conductors 13 for a common drain contact 15 and flat conductors 14 for a common gate contact 16 the respective end regions 27 and 28 of the flat conductors 13 14 respectively which are to be connected to the drain electrodes and to the gate electrodes running parallel are coated with a second soldering component 6 this soldering component 6 may include a plurality of metal layers which on the one hand prevent diffusion of the flat conductor material into the diffusion solder position 2 and on the other hand provide a diffusion solder material which can diffuse into the molten solder of the first solder component 5 since these flat conductors 13 14 are to be placed onto the active top surface of the semiconductor chip 9 no nanoparticles 8 are incorporated into the second solder component 6 especially since the first solder component on the semiconductor chip 9 as shown in fig1 already includes nanoparticles fig1 shows a diagrammatic cross section through a semiconductor chip 9 with coatings of a first solder component on the top surface 18 and on the back surface 22 the cross section shown in fig1 corresponding to the cross section shown in fig9 consequently there is no need to interpret or explain fig1 fig1 shows a further part of the flat conductor frame 26 which bears a chip island 11 which for its part is coated with a second solder component.