completeness and accuracy aluminum caps 24 1 are also deposited on top of doped strips 16 1 and will usually have the same thickness as conductive strips 18 referring now to fig5 it will be seen that the processing is completed by the removal of doped polysilicon strip 16 1 by subjecting the structure to a p polysilicon etching step which for example may be a plasma etch at which time the aluminum caps 24 1 deposited on top of doped strips 16 1 will also fall and are thus free to be washed away if desired the now exposed portions of silicon nitride 14 positioned between conductive strips 24 may be removed using a plasma etch however since the silicon nitride is also an insulator no untoward effects will be noticed if this is allowed to remain to complete the device a passivating layer 26 is now deposited over the entire structure and thus there is provided a plurality of closely spaced conductive strips having particular utility in the ccd art as an alternate embodiment one could completely oxidize doped strips 16 1 in which event it would facilitate their removal using a buffered hf etchant instead of the plasma etch it should be noted that the rate of lateral oxidation of polysilicon layer 16 in order to form strips 16.