rf power 300 w bias 3 sccm o 2 30 sccm ar at a temperature of 280 u00b0 c the layer grew to a thickness of 1227 u00e5 in 100 seconds of deposition time and exhibited a sheet resistance of 57 ohms sq the roughness illustrated in fig9 c can be characterized by an ra 0 88 nm and a rmax of 19 8 nm fig9 d was deposited using 1 5 kw rf power 300 w bias 0 sccm o 2 30 sccm ar at a temperature of 280 c the layer grew to a thickness of 580 u00e5 in 100 seconds of deposition time and exhibited a sheet resistance of 106 ohms sq the roughness illustrated in fig9 c can be characterized by an ra 0 45 nm and an rmax of 4 6 mm utilizing the example depositions described herein the roughness and resistivity of a transparent oxide film can be tuned to particular applications in general particularly high resistivities can be obtained which are useful for touch sensitive devices as shown in table 3 the sheet resistance ranged from about 39 u03c9 sq for trial 14 to a high of 12 284 u03c9 sq for trial 1 careful variation of the process parameters therefore allow control of sheet resistance over an extremely broad range low resistivities can be obtained by adjusting the process parameters for uses in devices such as oleds and mems display devices as is illustrated in table 3 the bulk resistivity can be controlled to be between about 2e 4 micro ohms cm to about 0 1 micro ohms cm additionally other parameters such as refractive index and transparency of the film.