with respect to the substrate 12 the layers 46 48 can be of a number of materials that are used in integrated circuit fabrication the applicant has found that titanium aluminum nitride tialn is a suitable material for the layer 46 and that titanium is a suitable material for the layer 48 the load formation 44 defines part of the proximal end wall 26 the load formation 44 is composite with a primary layer 50 and a secondary layer 52 as with the fulcrum formation 42 the layers 50 52 can be of any of a number of materials that are used in integrated circuit fabrication however as set out above the nozzle arrangement 10 is fabricated by using successive deposition and etching steps it follows that it is convenient for the layers 50 52 to be of the same material as the layers 46 48 thus the layers 50 52 can be of tialn and titanium respectively the nozzle arrangement 10 includes an ink ejecting member in the form of an elongate rectangular paddle 54 the paddle 54 is fixed to the load formation 44 and extends towards the distal end wall 24 further the paddle 54 is dimensioned to correspond generally with the nozzle chamber 22 it follows that displacement of the paddle 54 towards and away from the ink ejection port 30 with sufficient energy results in the ejection of an ink drop from the ink ejection port the manner in which drop ejection is achieved is described in detail in the above referenced patents applications and is therefore not discussed in any detail here to facilitate fabrication the paddle 54 is of tialn in.