to fig3 a method for fabricating a multipoint nanoprobe will now be described beginning with substrate 14 a dielectric layer s is are deposited by any known process such as for example physical vapor deposition pvd chemical vapor deposition cvd or thermal growth if substrate 14 includes crystal silicon dielectric layer 17 preferably includes silicon nitride or silicon oxide after deposition of layer 17 an etch step or polish step may be employed to prepare the surface of layer 17 a seed layer 21 is deposited on the surface of layer 17 seed layer 21 is deposited to provide good adherance for conductive materials which will be deposited in subsequent steps in one embodiment seed layer 21 includes ti cr or a combination thereof in particularly useful embodiments a seed layer 21 of ti or cr is deposited at about 100 angstroms thick on the surface of layer 17 seed layer 21 may be deposited using for example a sputtering technique or other pvd or cvd process in a same processing chamber and by similar methods conductive layer 15 is deposited on seed layer 21 taking advantage of seed layer 21 to form strong adhesion between conductive layer 15 and dielectric layer 17 conductive layer 15 may include a metal an alloy or conductive oxides of metals as described above in one embodiment layer 15 includes a pt.