lowest is obtained making it possible to perform correction this method is one application method of the present invention in this embodiment equipment equivalent to that of fig1 is used and the mark detection part shown in fig4 is used in fig4 a mark for electron beam 407 is isolated from a mark for light beam 408 this is done to increase the accuracy by using a mark pattern suitable for the respective marks since the relative distance between the marks must be stable to heat and stress both must be positioned as close as possible to each other in this embodiment as a mark substrate aluminum al 403 as a metal having a thickness of 100 nm is deposited on a silicon stencil 404 having a thickness of 5 u03bcm the electron beam scattering power of the aluminum is not very different from that of the silicon an effect for increasing the reflectivity of the light can be expected in general an electron beam 401 is hard to be deflected largely so that a small mark is preferable a light beam 402 for mark detection has poor resolution so that a large mark is preferable the mark for light beam 408 is larger than the mark for electron beam 407 in fig4 the mark for light beam 408 having a 4 u03bcm line with a 20 u03bcm pitch is formed following the aperture shape having 1 u03bcm line with a 2 u03bcm pitch of the mark for electron beam 407 a light absorber 409 is provided under the mark for light beam 408 to prevent irregular reflection of light the light absorber 409 is desirably a conductor to prevent electrification due to the electron beam transmitting through therenear carbon is used as the.