semiconductor component in fig2 a the numeral 20 identifies a semi insulating substrate the numeral 21 an n type semiconductor in the selected example advantageously n inp and the numeral 22 a p type semiconductor advantageously p inp the numerals 23 and 24 identify contacts which supply the two semiconductors 21 and 22 with current the laser or optical amplifier of fig1 a is embedded between semiconductors 21 and 22 as in fig1 a the layer sequence is identified by the numerals 10 and 11 here again the coordinate system marked 12 indicates the spatial position of the semiconductor arrangement fig2 b shows a further embodiment in which the laser or optical amplifier is disposed on an n type semiconductor e g n inp marked 25 the thus produced arrangement is embedded in a p type semiconductor e g p inp as in fig2 a the numerals 23 and 24 identify the current supply the spatial position of the arrangement is indicated by coordinate system 12 fig2 c shows a third embodiment of the semiconductor laser or semiconductor amplifier the layer sequence composed of the two layers 10 and 11 is here embedded at its frontal faces in an n type semiconductor 27 e g n inp and a p type semiconductor 28 e g p inp contacts 23 and 24 serve as current supplies as in fig2 a and 2b the spatial position is indicated by coordinate system 12 if an external voltage is applied to the illustrated structures with the polarity as shown the injected charge carriers collect in the semiconductor region having the smaller band gap here marked e1 in this way a spatially periodic.