until encountering the p cathode diffusion 184 rather than traverse the higher impedance path through drift region 130 to the diffusion 184 current flow in the vicinity of the pn junction between the diffusions 184 and 190 is thus minimized and the probability of a turn off current spike forward biasing this junction and precipitating parasitic latch up is correspondingly reduced fig6 shows an alternate preferred embodiment of the inventive thyristor device 100 39 designed to reduce the potential of parasitic latch up during both on state operation and during turn off the thyristor devices 100 39 and 100 are structurally identical except within the regenerative region 114 proximate the axis a fig4 specifically in the thyristor device 100 39 a remote electrode 234 39 is directly coupled to the surface 140 39 of the p base 120 39 additionally in the embodiment depicted in fig5 the drift region 130 39 is not interposed between the p base region 120 39 and the axis of symmetry a 39 during on state operation of the device 100 39 a substantial percentage of the anode current flows vertically through the regenerative portion 114 39 since it is in this region where the forward bias across pn junction 124 39 allows a large number of electrons to be injected into the drift region 130 39 from the floating emitter 116.