fig1 comprises performing an ion milling process or another type of removal process to remove the mr material 302 exposed by photoresist 1002 fig1 is a cross sectional view of read element 200 after the ion milling process of step 122 after the ion milling process the mr sensor 1202 is defined in read element 200 from the mr material 302 the milling process also removes the second photoresist 1002 step 124 of fig1 comprises depositing an insulation layer on the second photoresist 1002 and on side regions of mr sensor 1202 fig1 is a cross sectional view of read element 200 with insulation layer 1302 deposited according to step 124 insulation layer 1302 may comprise an alumina material that is formed using an atomic layer deposition ald process insulating layer 1302 may be deposited to have a thickness less than about 80 u00e5 e g in the range of 20 u00e5 to 80 u00e5 step 126 of fig1 comprises depositing hard bias material on the insulation layer 1302 the hard bias material is used to form hard bias magnets on side regions of mr sensor 1202 fig1 is a cross sectional view of read element 200 with hard bias material 1402 deposited according to step 126 the hard bias material 1402 is used to longitudinally bias a free layer not shown in mr element 1202 the hard bias material 1402 may be deposited in step 126.