the path is so shaped by cutouts along the side edges of the element the conductor is formed of alternating sections of large and small aspect ratio defined as the width across the path to the thickness of the sheet the sections are also defined by cutouts in the sheet narrower sections concentrate currents have higher inductances and couple greater amounts of energy into the chamber thereby producing rings of discrete plasma concentrations one or more rings can be produced by configuring one or more loops of the inductive element so the higher inductance lower aspect ratio sections lie at appropriate radii from the axis of the chamber application_number US 76650504 A description fig1 shows a cut away portion of a semiconductor wafer processing apparatus 10 for example an ionized physical vapor deposition ipvd apparatus as described in u s pat nos 6 080 287 or 6 287 435 or an etching apparatus as described in u s pat no 6 652 711 each hereby expressly incorporated herein by reference fig1 a is a perspective diagram of an embodiment of an apparatus 10 of fig1 such an apparatus 10 includes a vacuum processing chamber 12 in which is supported a semiconductor wafer or other substrate 14 for processing the apparatus 10.