for bonding two wafers is shown schematically in fig1 and 2 in this example the bonding technique according to the present invention is used to hermetically cap sensor components which have been constructed using surface micromechanics etching or deposition technology fig1 shows a cross sectional view of wafer 11 upon which is arranged on a top side in the center sensor structures 12 sensor structures 12 may be an oscillator channel pump accelerometer filter or any other appropriate mems structure and may be of any appropriate shape and or size sensor structures 12 may be composed of silicon single crystals silicon poly crystals metal galvanic material e g zinc or silver silicon germanium plastic or any other appropriate material sensor structures 12 may be constructed by any appropriate micromachining method including methods utilizing vapor deposition and etching techniques in particular chemical vapor deposition cvd may be utilized including laser assisted cvd lcvd plasma activated cvd pacvd electron assisted cvd eacvd and electron beam induced cvd ebcvd also physical vapor deposition pvd may be utilized including electron beam pvd ebpvd also arranged on the top side of wafer 11 on both sides of sensor structure 12 is bond frame or bond ring 13 not illustrated in fig1 due to the cross sectional nature of the drawing is that bond frame 13 forms a continuous circumference around sensor structure 12 bond frame 13 may be made in any appropriate shape or size it may also be advantageous if the top surface of bond frame 13 is smooth to facilitate formation of a bond.