to fig1 a and 12 b a second magnetic stack 260 is deposited over conductive lines 252 and cap layer 254 a lithography pattern and rie is performed to form the pattern in the second magnetic stack 260 m 3 aluminum layer 252 and the first magnetic stack 238 an ild 262 is deposited to fill the gaps between the stacks 238 260 and conductive lines 252 the ild is cmp 39 d to planarize the ild 262 surface and expose the tops of the second magnetic stacks 260 a conductive material 264 comprising for example an m 4 aluminum layer is deposited over the ild 262 a lithography pattern and rie is performed to form the pattern in the m 4 conductive layer 264 and the second magnetic stack 260 a dielectric material 266 is deposited over the patterned conductive lines 264 and the second magnetic stack 260 as shown in fig1 a and 13 b a plurality of additional magnetic stacks may be fabricated between metallization layers by repeating the manufacturing process described herein the present invention achieves technical advantages by providing an mram device 160 and manufacturing process thereof having conductive lines 134 and 152 that are comprised of aluminum and which may be etched directly rather than requiring a damascene process this allows for improved alignment of the conductive lines 134 152 over conductive stacks 138 preventing line to line or level to level electrical shorts in accordance with the present invention aluminum is used in an mram.