following mechanism can be used by the mask pulsed plating method both the inhibitor b and the accelerator c would be partially or wholly swept off the field regions of the substrate by the mask however both species would still be present in the features when the substrate is exposed to the electrolyte and the electric field the inhibitor b would readily adsorb onto the field regions introducing a high resistance path for the plating current the accelerator c which is already present within the features compensates for the action of the inhibitor in those regions and the current can easily flow through these features therefore until the accelerator c is properly adsorbed onto the field regions the film growth rate within the features will be higher this same result can also be expected from yet another chemistry where an inhibitor d has the property of strong adsorption and the accelerator e is weakly bonded to the field regions in this case the mask can readily remove the weakly bonded accelerator e from the field regions whereas the accelerator e remains attached to the surfaces within the features upon exposure to the electrolyte and electric field the plating current flows through the features preferentially until the accelerator e begins to get adsorbed again onto the field regions it should be noted that the above descriptions are just some examples of the mechanisms involved in the.