the softer bottom region 20 or top region 24 is got also by either decreasing the weight percentage of silver or increasing the weight percentage of copper or both thus though the whole modulus of the conductive structure 18 is reduced the conductive structure 18 still supports the chip unit 10 and the conductive substrate 25 and further prevents the interfaces near or on the chip unit 10 or the conductive substrate 25 from cracking fig2 a 2d are schematically cross sectional diagrams illustrating the process form manufacturing the conductive structure 18 in accordance with the present invention depicted as fig2 a an ubm structure 34 shown as single layer is formed by any suitable methods on the multitudes of chip units 32 of a wafer structure a mask layer 36 such as a dry film is formed on the ubm structure 34 and then removed to expose the partial surface of the ubm structure 34 next by any suitable methods such as sputtering a conductive material 35 for forming the bottom of the bump covers the exposed surface of the ubm structure 34 shown in fig2 b the conductive material 35 is reflowed to form the bottom region 20 alternatively another masking film not shown is formed on the surface of the bottom region 20 by sputtering after the reflowing of the conductive material 35 which is exemplary ni film as a cap for preventing the compositions in the layers from diffusion each another next another mask layer 38 is formed by any suitable methods which has at least one opening definitely above that of the mask layer 36 for promoting the height of the subsequent formed bump next conductive material 37 is sputtered into the openings.