the likes in some embodiments the substrate 10 adopts the transparent material and the final tft products can be utilized in transmissive transflective or reflective lcds in other embodiments the substrate 10 adopts the opaque material and the final tft products can be only utilized in reflective lcds or self illumination displays the patterned metal layer 12 can be metal alloys or multi layered structures thereof in some embodiment the patterned metal layer 12 can be single layered or multi layered structures of molybdenum aluminum copper titanium or alloys thereof the method of forming the patterned metal layer 12 includes forming a metal layer on the substrate 10 and then forming the patterned metal layer 12 by photolithography with etching the step of forming the metal layer includes physical vapor deposition pvd sputtering or the likes the photolithography process may include processing the steps of photoresist coating soft baking mask aligning exposing post exposure baking developing hard baking other suitable steps or combinations thereof in addition the exposing step of the photolithography can be replaced with other step such as maskless lithography electron beam writing or ion beam writing the etching process can be dry etching wet etching or combinations thereof although the patterned metal layer 12 only serves as a gate electrode in a tft and a gate line connecting the gate electrode in fig1 c the patterned metal layer 12 may also serve.