shown a process reactor in which a chamber wall 4 of a process chamber 1 surrounds a chamber interior 5 inside the chamber interior 5 there is disposed a substrate 3 typically a semiconductor wafer on a holding device 2 the process chamber 1 also has feed and discharge devices 6 by means of which chemical precursor compounds of a layer material are introduced into the process chamber 1 and undeposited fractions of the chemical precursor are removed again furthermore the chamber wall 4 of the process chamber 1 has at least one transparent section 7 which lies opposite a substrate surface 8 of the substrate 3 on which a layer of the layer material is deposited using an ald process heat radiation 10 from a radiation source 9 which is arranged outside the chamber interior 5 is transmitted to the substrate surface 8 through the transparent section 7 of the chamber wall 4 the substrate 3 is introduced to the process chamber 1 via a substrate feed device 11 with the process according to the invention the production of nanolaminates comprising hfo 2 sio 2 layers can be carried out for example in the following process steps a1 setting the temperature on the substrate surface to 500 u00b0 c adding the first chemical precursor compound of the first monolayer hfcl 4 reaction time 500 ms 100 to 10000 ms a2 filling the process chamber with an inert gas n 2 or argon for 1000 ms 100 to 10000.