200 made of an organic semiconductor material such as long chain molecules of hydrocarbons or benzene rings is denoted by r as shown in fig4 a as shown in fig4 b given a high applied voltage v electric charges appear between the molecules of the memory unit 20 due to an electric field upon removal of the high applied voltage from the memory unit 20 the read resistance of the memory unit does not equal the one read before the high applied voltage is applied and thus the overall resistance of the channel 200 is denoted by r u2032 as shown in fig4 c this is because the conductivity of the molecules of the memory unit 20 changes depending on whether electric charges are stored in the nanocrystals or not for example the conductivity of a molecule varies due to the twisting of the molecule itself structural changes or changes in electron cloud distribution before a voltage is applied a molecule is characterized by conductivity as electron clouds overlap one another allowing its electric charges to flow once a voltage is applied and thus electric field is produced the electron clouds may become discrete due to the changes in orientation or shape of molecules thereby affecting its conductivity as a result according to this embodiment of the present invention if an additional transistor for reading the content in the memory unit is provided a u201c 0 u201d and a u201c 1 u201d of the memory can be read and judged effectively in light of the strength of the electric current read the preferred embodiments described above only serve the purpose of explaining the principle and effects of.