swp can be removed from conventional substrates known to those skilled in the art such as silicon silicon dioxide boron phosphorous silicon glass bpsg aluminum aluminum alloys copper copper alloys titanium tungsten metal nitrides etc the effectiveness and unexpected nature of the stripping compositions of the invention is illustrated but not limited by the data presented in the following examples unless otherwise specified all parts and percentages are by weight in order to demonstrate the efficacy of the different concentrations of the stripping and cleaning compositions the following tests were conducted copper silicon wafer substrates containing commercial photoresists and plasma generated swp residues labeled as 34 veils 34 were post baked at 180 u00b0 c for 60 minutes the substrates were cooled and dipped into vessels containing a stripping composition and stirred with a magnetic stirrer there was a vessel containing a stripping composition maintained at a temperature of 50 u00b0 c and another at 55 u00b0 c the contact time with the compositions was 20 to 30 minutes the substrates were washed with deionized water and dried with nitrogen ______________________________________ wtsample no ingredient 1 2 3 4 5 7______________________________________mea 58 0nmea 78 0 78 0 78 0 78 0 79 0benzotria 1 0 1 0zolewater 20 0 20 0 22 0 20 0 20 0 18 0catechol 2 0 5 0gallic acid 1 0 2 0hydroxyl 18 0amine______________________________________ sample 3 showed severe corrosion in vias samples 1 and 4 showed some swp residue and corrosion a comparison of the sputtered copper etch rates at 75 u00b0 c for samples 2 5 and 7 by measuring the metal content in solution is shown in fig2 a comparison of the sputtered copper etch rate at 75 u00b0 c and 85 u00b0 c for.