the energy stored in the leakage inductance at the time instant t 3 i e w e u00bdi l t 3 2 l p and inversely proportional to the equivalent of the c par 11 c par 14 capacitive network mode 3 or mode 4 is followed by mode 5 mode 5 starts immediately after q12 and q13 are turned on and occurs during the time interval t 4 lt t u2266 t 5 this mode is equivalent to mode 1 if prior to this mode the dab was in mode 4 both transistors turn on softly with zero voltage transition for a slow body diode case i e when the previous state is mode 3 a soft transition cannot be guaranteed and consequently increased switching losses occur a similar analysis can be carried out for modes 6 to 8 the discussion just given shows that the parasitic drain source capacitance increases the voltage stress across the switches and negatively affects the converter efficiency for the case when the antiparallel diode is slow compared to the frequency of oscillations the discussion also indicates that the voltage stress value and the frequency of oscillations are inversely proportional to the equivalent capacitance of the c par 11 c par 14 network to minimize this effect a straightforward solution would be.