will remove any titanium on the substrate along with the tisi x layer formed on the silicon dioxide with the salicide completed the interconnect can then be completed by deposition of subsequent insulation layers and or aluminum metalization as preferred the table shows various parameters used to deposit ti onto the silicon __________________________________________________________________________deposition conditions actual heater suscep back dep zone temp rf press press time rotation slave set wafer powerticl sub 4 h2 ar torr torr sec rpm point temp watts __________________________________________________________________________1 1500 300 5 2 120 100 0 0 610 530 2502 1500 300 5 2 120 100 0 0 610 530 2503 1500 300 5 2 120 100 0 0 610 530 2504 1500 300 5 2 120 100 0 0 610 530 2505 1500 300 5 2 120 100 0 0 610 530 2506 1500 300 5 2 120 100 0 0 610 530 2503 1500 300 5 2 120 100 70 0 610 530 2503 1500 300 5 2 120 100 70 0 610 530 2503 1500 300 5 2 120 100 90 0 610 530 2503 1500 300 5 2 120 100 90 0 610 530 2503 1500 300 5 2 120 100 130 0 610 530 2503 1500 300 5 2 120 100 130 0 610 530 2503 1500 300 5 2 120 100 110 0 610 530 2503 1500.