u03b4 ue89e ue89e r m u2245 r u03b4 ue89e ue89e r 2 for values of m gt gt 3 the approximate nature of the previous equation asymptotically approaches an equality those skilled in the art will quickly recognize that the aforementioned embodiments encompassing a plurality of mtj devices may be applied in a similar fashion to fig5 b as well fig6 shows an embodiment of an implementation of memory block 600 utilizing a reference cell 400 as described in conjunction with fig4 fig6 includes current sources 602 606 column decoder outputs 607 609 611 mosfet transistors 608 610 612 646 652 660 mtj devices 614 618 630 634 digit lines 620 636 word lines 622 638 mosfet switching transistors 624 628 640 644 654 662 mtj devices programmed to a low resistivity setting 648 656 mtj devices programmed to a high resistivity setting 650 658 a reference voltage output tap 664 and a signal voltage output tap 666 in this embodiment of a memory block 600 each line in an array of mtj devices 614 618 630 634 has an associated reference cell one reference cell 400 fig4 is comprised of current sources 604 606 mosfet transistors 646 652 mosfet switching transistor 654 an mtj device programmed to a low resistivity setting 648 and an mtj device programmed to a high resistivity setting 650 notice that the current sources 604 606 associated with the reference cells each supply about half the current level.