more than 60 minutes in other embodiments other solution strengths and dipping times may also be used at block 507 the low k interlayer dielectric oxide may be cured at 110 degrees celsius for approximately 20 to 30 minutes other cure temperatures and cure times may also be within the scope of an embodiment of the invention in one embodiment of the invention the low k interlayer dielectric oxide may not need to be cured after dipping into a solution of a silane coupling agent at block 509 a hard mask etch stop or barrier seed layer may be coupled to the surface of a low k interlayer dielectric oxide other layers may also be within the scope of the invention referring to fig6 an embodiment of the invention is shown in the form of a flowchart for preparing a solution for dipping a low k interlayer dielectric oxide into in order to silanize it at block 601 a solution of silane coupling agent may be mixed with a solvent such as but not limited to ethyl alcohol water and hexane at block 603 the solution of silane coupling agent may be mixed with an acid such as but not limited to acetic acid at block 605 the ph of the silane coupling agent solution may be adjusted to approximately five at block 607 the solution strength of the silane coupling agent solution may be adjusted to a strength approximately in the range of 0 2 percent to 2 percent other ph values and solution strengths may also be within the scope of the invention referring to fig7 an embodiment of the invention is shown in the form of a flowchart of instructions provided by a.