conductive path between remaining portions of the polysilicon structures 10 one method for eliminating the stringers e g stringer 60 is to perform an over etch when creating the space 50 a result of applying this method is illustrated in a structure 200 in fig3 in which a stringer such as stringer 60 in fig2 is removed leading to clean sidewalls 70 of the oxide structures 15 however the over etch may produce an undercut 72 of the polysilicon structures 10 thereby creating a gate having a reentrant profile 75 with a critical dimension 74 that is not well controlled the reentrant profile 75 therefore may lead to a v t with a distribution having a width that exceeds an acceptable value the present disclosure addresses the difficulties with prior art methods such as described above with reference to fig1 3 fig4 illustrates one example of a semiconductor film stack 300 configured to solve the problems of the prior art already identified the film stack 300 is similar to film stack 100 of fig1 comprising an ono layer 5 polysilicon structures 10 oxide structures 15 a polysilicon layer 20 and hard mask layers 25 40 each of the layers and structures having dimensions thicknesses that may be similar to corresponding layers and structures of the film stack 100 of fig1 the film stack 300 is further overlaid with a liner 80 the liner 80 which may be formed for example.