integrated circuit according to example 4 of this invention wherein fig1 a is a plan view and fig1 b is a sectional view taken along the line xviib u2014 xviib of fig1 a in the process of example 4 a metal film 13 for example chromium cr titanium ti with good adhesive properties to an organic insulating or dielectric layer 15 is formed on the organic insulating layer 15 and a nickel ni layer or nickel alloy layer 2 a is applied thereon as shown in fig1 a and 17b oxide or resudues of organic matters carbon etc on the surface of this nickel ni layer or nickel alloy layer 2 a is removed by the surface treatment procedure of the above example 1 or 2 and thereafter a gold au ribbon or gold au wire 14 is bonded by ultrasonic heat pressure technique such bonding has been usually difficult on the nickel ni layer or nickel alloy layer 2 a due to the presence of oxide film on the surface but good bonding can be achieved as a result of removing the oxide by the procedure of the above example 1 or 2 although the foregoing examples include the metal surface treatment of the solder layer 3 a or nickel ni.