results from receiving too much photoelectric charge flowing to adjacent pixels controlling the charge stored in the pinned photodiode 10 can prevent the blooming phenomenon please refer to fig8 which is a diagram of the transfer transistor 12 and the pinned photodiode 10 when a voltage v g is provided at the gate of the transfer transistor 12 since the transfer transistor 12 has a threshold voltage v th a voltage at the source of the transistor 12 is v g u2212 v th wherein v th includes a body effect please refer to fig9 which shows the well capacity of the pinned photodiode 10 of fig8 in fig9 voltage values approaching the bottom become larger that is the voltage value of v pinned is larger than the voltage value of v g u2212 v th from fig9 the well capacity of the pinned photodiode 10 is the range between v pinned and v g u2212 v th the well capacity of the pinned photodiode 10 is dependent on two voltages v pinned and v g u2212 v th the pinned voltage v pinned and the threshold voltage v th of the pinned photodiode 10 are constant after the semiconductor process is finished the only way to change the well capacity of the pinned photodiode 10 is to change the voltage v g provided to the gate of the transfer transistor 12 in other words if the larger voltage v g is provided to the gate of the transfer transistor 12 the well capacity of the pinned photodiode.