invention the vapors of the silane coupling agent may be pulled over the low k interlayer dielectric oxide by a low pressure at block 307 a hard mask etch stop or barrier seed layer may be coupled to the surface of the low k interlayer dielectric oxide other deposited layers may also be within the scope of the invention referring to fig4 an embodiment of the invention is shown in the form of a flowchart for silanizing a low k interlayer dielectric oxide layer by exposing it to vapors that have been heated or exposed to low pressure at block 401 the surface of the low k interlayer dielectric oxide may be oxidized in a low power oxygen plasma at block 403 a silane coupling agent may be vaporized at block 405 a silane coupling agent may be vaporized by heating a solution of the silane coupling agent at block 407 a low pressure region may be used to pull a vapor of the silane coupling agent over the surface of the interlayer dielectric oxide in one embodiment of the invention a near vacuum may be used to vaporize a liquid solution of the silane coupling agent at block 409 the surface of a low k interlayer dielectric oxide may be exposed to vapors of the silane coupling agent at block 411 a hard mask etch stop or barrier seed layer may be coupled to the surface of a low k interlayer dielectric oxide referring to fig5 an embodiment of the invention is shown in the form of a flowchart for silanizing a low k interlayer dielectric oxide by dipping in a solution of silane coupling agents at block 501 a surface of a low k interlayer dielectric oxide may be.