shows a section of a portion of an inventive stray radiation grid in an intermediate stage of production the grid in this partially completed stage is in the form of a silicon carrier block 1 such as a monocrystalline 100 silicon wafer the silicon carrier block 1 has a number of holes 2 respectively forming separate rows these holes have been etched into the silicon carrier block 1 by means of a directionally selective etching process an electrochemical etching process an anisotropic etching process an ion etching process as well as a plasma etching process are particularly suited for this the dimension of the holes 2 was defined by a photomask placed on the surface 3 of the silicon carrier block 1 as was their arrangement any mask known from semiconductor technology can be utilized for the photomask following development of the holes 2 these are filled with radiation absorbing material preferably lead to form the absorption elements 4 for which likewise several techniques can be used the lead can be electrochemically deposited in the holes alternatively the introduction of liquid lead by means of a casting process is possible whereby this can proceed for example by covering the surface 3 of the silicon carrier block 1 with a wetting inhibitor so that the liquid lead does not adhere thereto with.