fig1 is an exemplary flow chart describing a method for manufacturing an encapsulated device the method begins in step s 100 and proceeds to step s 200 wherein the device cavity is formed in the lid wafer in step s 300 the indentation features are formed in the device cavity of the lid wafer the device cavity and indentation features may be formed by etching a patterned substrate in a liquid acid etchant or by deep reactive ion etching for example this may complete the preparation of the indented lid wafer in step s 400 the getter material is deposited over the patterned lid wafer in various exemplary embodiments the getter material may be deposited by sputter deposition for example in step s 500 the device is formed on the device wafer the device may be formed by any number of bulk machining or surface machining techniques for example sputtering plating and etching in step s 600 the lid wafer is aligned with the device wafer so that the device cavity is registered over the device and the wafers may be clamped together in a wafer assembly in step s 700 the device cavity is evacuated and the gas environment within the wafer bonding tool may be replaced with a preferred gas in step.