herein the phrase u201c high aspect ratio u201d refers to an in plane length of the thinned substrate region shape divided by its width for example a long thin rectangular geometry will provide a generally uniaxial stress the magnitude of the stress will generally increase as the thickness of the thinned region is decreased the stress may be applied through a pressure difference across the ic plate or by external application of a force via a suitable contacting structure in both of these embodiments the magnitude of the stress can be adjusted by varying the pressure difference or external force applied by the contacting structure such external application of stress may be incorporated into new packages described below that provide the contacting structure which applies the stress additionally back end processing occurring after the s d anneal involving the deposition of a thin film having substantial residual stress therein can be deposited on the backside of the thinned substrate as used herein the phrase u201c substantial residual stress u201d refers to an in plane stress level of at least 500 mpa and more preferably greater than 1 gpa although a thin layer of au may be deposited on the backside of a wafer in a conventional process to provide enhanced.