40 a 40 b have respective contact regions 32 a 32 b proximate to the germanium structure 32 referring now to fig7 in which like elements of fig1 6 are shown having like reference designations a metal layer 50 which can be another titanium or titanium nitride barrier metal layer 50 can be deposited over the imd layer 38 and into the cavities 42 40 a 40 b a metal for example tungsten aluminum or copper can be deposited to fill the cavities 42 40 a 40 b to form conductive contacts 44 46 a 46 b respectively the conductive contacts 46 a 46 b are hall cell contacts that contact with the germanium structure 32 which as described above forms a hall plate of a hall effect element while two conductive contacts 46 a 46 b are shown it should be recognized that more conductive contacts can be formed to contact the germanium structure 32 at other contact points referring now to fig8 in which like elements of fig1 7 are shown having like reference designations another metal layer 48 a so called metal two m2 layer for example aluminum copper or an alloy of either can be deposited over the imd layer 38 and over the metal layer 50 the metal layer 48 can be etched to form regions 48 a 48 b 48 c the region 48 b can form a field plate of the hall effect element the regions 48 a 48 c can couple the conductive contacts 46 a 46 b respectively i e the hall plate 32 to other circuit elements another metal layer 52 which can be another titanium or titanium.