112 a hard mask layer 114 and a photoresist film not shown are formed over a semiconductor substrate next a pillar patterning process is performed with a photolithography process using an exposure maskdefining a first contact hole region to form a photoresist film pattern 116 that is the photoresist film pattern 116 includes pillar patterns formed in a pillar shape over the first contact hole region the pillar pattern can be formed with a single patterning process using a single exposure mask or a double exposure process using line space masks in addition if a critical dimension cd of the pillar is too small the pillar may collapse during the pillar pattern formation thus in order to prevent this the pillar pattern is formed having a cd larger than a target cd and then the pillar pattern having the target cd may be formed by reducing the cd with a trimming process the hard mask layer 114 can be formed with a stack structure of an amorphous carbon layer and a silicon oxynitride film in addition a bottom anti reflection coating barc can be formed under the photoresist film not shown next referring to fig2 a spacer layer 118 is formed on the entire surface including the photoresist film pattern 116 e g by using an atomic layer deposition ald process the ald process is preferably formed at a low temperature not more than 200 u00b0 c the spacer layer 118 can be formed of a nitride film an oxide film or a combination thereof if the barc is formed under the photoresist film the barc.