provides additional protection to the internal circuitry 37 from an esd event and voltage overshoot the n guard ring 32 is connected to vdd 38 and the p guard ring 31 is connected to vss 39 or circuit ground continuing to refer to fig5 b the p diffusion 31 is formed with a boron dopant having an implant dosage of approximately about 1e14 to 1e16 ions per square centimeter using an implant energy of approximately about 20 kev to 100 kev a p well not shown in which the p diffusion 31 could be implanted would be formed with a boron dopant to a depth of approximately about 1 to 2 micrometers with an implant dosage of approximately about 2e12 to 1e13 ions per square centimeter using an implant energy of approximately about 100 kev to 1 mev and being annealed for approximately about 60 to 180 minutes at a temperature of about 900 to 1150 degrees centigrade continuing to refer to fig5 b the n diffusion 32 is formed from a dopant of arsenic or phosphorus with an implant dosage of approximately about 1e14 to 1e16 ions per square centimeter and having an implant energy of approximately about 20 kev to 100 kev the n well 34 is formed to depth of approximately about 1 to 2 micrometers from a dopant of arsenic or phosphorus with an implant dosage of approximately about 2e12 to 1e13 ions per square centimeter having an implant.