are formed on it at this time glass glass ceramic aluminum oxide mullite cordierite or aluminum nitride having a thermal expansion coefficient which is close to that of si is selected the thermal expansion coefficient of si is about 3 0 ppm at a temperature of 25 to 1 000 u00b0 c s32 ii the glass adhesion layer 13 is interposed between the multilayer substrate 22 and the si wafer 21 and the resultant structure is heated to melt the glass adhesion layer 13 thereby adhering the multilayer substrate 22 and the si wafer 21 to each other if a ceramic having a thermal coefficient which is largely different from that of si is selected after the structure is cooled cracking or the like occurs the thermal expansion coefficient of the adhesion glass is also preferably an intermediate value between that of si and that of the material of the multilayer substrate as the adhesion glass one having a softening temperature as low as possible must be selected since it is expected to serve as a buffer layer that absorbs the difference in thermal expansion coefficient between si and the multilayer substrate since the structure is subjected to a heating process at about 1 000 u00b0 c in the subsequent step of forming circuits on si glass that can maintain an appropriate viscosity at this.