s 70 the contacting of the semiconductor die or semiconductor chip 200 s 20 to the electroplating s 50 are performed such that the one layer semiconductor die or semiconductor chip 200 may be coupled to be stacked that is the substrate 100 which is a component required for supporting the first semiconductor die or semiconductor chip 200 contacts the semiconductor die or semiconductor chip 200 to the top portion of the semiconductor die or semiconductor chip 200 from the stacking of the next semiconductor die or semiconductor chip 200 through this the method for manufacturing a through silicon via tsv 1000 according to the exemplary embodiment of the present invention may form the through silicon via tsv 1000 having the multi layer semiconductor die or semiconductor chip 200 in a build up scheme of connecting the semiconductor die or semiconductor chip 200 through the electroplating after aligning the semiconductor die or semiconductor chip 200 in a multi stage scheme fig1 shows an example where two semiconductor dies or semiconductor chips 200 are formed on the top portion of the substrate 100 but the exemplary embodiment of the present invention is not limited thereto at least three semiconductor dies or semiconductor chips 200 may be formed to be stacked as described above even though the method for manufacturing a through silicon via tsv 1000 according to the exemplary embodiment of the present invention aligns the multi layer semiconductor die or semiconductor chip 200 the.