the second dielectric material are a same number of layers application_number US 20126608 A description although certain embodiments of the present invention will be shown and described in detail it should be understood that various changes and modifications might be made without departing from the scope of the appended claims the scope of the present invention will in no way be limited to the number of constituting components the materials thereof the shapes thereof the relative arrangement thereof etc although the drawings are intended to illustrate the present invention the drawings are not necessarily drawn to scale fig1 depicts a cross sectional view of a pre metal dielectric pmd 10 upon which a first insulative layer 12 a is formed the pmd 10 comprises one or more dielectric materials such as a sio 2 based material i e sio 2 psg bpsg sicoh osg silk u2122 dow chemical corp sin sic sicn c u2014 h etc the first insulative layer 12 a comprises a dielectric material in this example an organic dielectric material such as polyarylene ether silk u2122 parylene n or f teflon or other porous versions of these films the type of organic dielectric material used may depend upon the deposition technique used for example if the first insulative layer 12 a is formed using chemical vapor deposition cvd or plasma enhanced chemical vapor deposition pecvd the parylene n or f teflon or other porous versions of these films may be used if however first insulative layer 12 a is formed using spin on deposition the silk u2122 may be used the first insulative layer.