alkynes phosphines and co as used herein metal amidinates having the same ratio of metal to amidinate as the monomer but varying in the total number of metal amidinate units in the compound are referred to as u201c oligomers u201d of the monomer compound thus oligomers of the monomer compound m ii amd 2 include m ii amd 2 x where x is 2 3 etc similarly oligomers of the monomer compound m i amd include m i amd x where x is 2 3 etc a silicon wafer with a sio 2 insulating layer on top was used as the substrate trenches and holes were etched in some areas of the sio 2 layer tungsten nitride was deposited by cvd by exposing a vapor mixture of about 0 05 torr bis tert butylimido bis dimethylamido tungsten vi 0 5 torr ammonia and 0 5 torr nitrogen to a substrate temperature of 390 u00b0 c for 1 minute a diffusion barrier of wn about 2 nm thick was deposited cobalt nitride was deposited by cvd a vapor mixture of about 0 03 torr bis n tert butyl n u2032 ethyl propionamidinato cobalt ii 0 2 torr ammonia 0 3 torr hydrogen and 0 5 torr nitrogen to a substrate temperature of 186 u00b0 c for 4 minutes a layer comprising co x n about 2 nm thick was deposited for analysis of this co x.