new pattern for one or more subsequent steps of implanting ions 14 to create patterned buried structures from buried damaged regions 18 u2033 and amorphous regions not shown and substrate 12 u2032 above fig2 is a cross section view of structure 19 which illustrates the second step of formation of an amorphous region 20 formed above the damaged region 18 in substrate 12 u2033 ions 14 may or may not be the same as used in step 1 ions 14 are implanted at a reduced temperature below 200 u00b0 c the dose may be in the range from 1 u00d7 10 14 to 1 u00d7 10 16 ions cm 2 a description of forming a damaged region is given in u s pat no 5 930 643 which issued jul 27 1999 to d k sadana et al depending on the element used to form ion 14 damaged region 18 may contain si u2014 o si u2014 n si u2014 c or their combination in precipitate form where the respective element of ions 14 is oxygen nitrogen or carbon prior to the second step of implanting upper surface 13 of substrate 12 should be clean without any surface oxides particulates and or other material or upper surface 13 can have a thin layer thereon of dielectric material having a thickness in the range from 50 u00e5 to 5000 u00e5 a standard industry clean procedure such as used in the art for cleaning wafers may be used such as an rca clean process or an ibm huang clean process mentioned above fig3 is a cross section view of structure 21 which illustrates the third step of forming a partially regrown region 22 of region 20 in fig2 the third step may.