rezl 28 or baker aleg 310 in one embodiment the solvent is one such as act ne 14 which does not unduly affect tungsten plugs which may be present in the substrate preferably the solvent is non aqueous with or without a solvent clean acts 107 and 109 can leave contaminants on the capacitors including the capacitor side walls etching tends to produce metal containing contaminants whereas ashing an organic resist can leave organic polymer contaminants the resist and etch by products can combine to produce other types of contaminants act 111 the plasma clean removes contaminants almost regardless of type by removing a thin outer layer from the one or more capacitors in one embodiment the plasma clean removes from about 5 to about 100 u00e5 of material from the capacitor sidewalls in another embodiment the plasma clean removes from about 7 to about 50 u00e5 of material in a further embodiment the plasma clean removes from about 10 to about 30 u00e5 of material fig2 illustrates the plasma clean in fig2 device 200 which includes substrate 201 and capacitor stacks 203 is exposed to plasma 205 generated from a remote source the plasma 205 removes an outer layer 207 of the capacitor stacks 203 including material from bottom electrode layer 209 dielectric core 211 and top electrode layer 213 the plasma employed in act 111 includes fluorine containing radicals such as fluoride radicals produced from a fluorine containing compound examples of fluorine containing compounds include fluorocarbons examples of fluorocarbons include perfluorocarbons such as.