microns while x p u2212 ranges from 1 6 to 1 8 microns for a device structure in which the trench depth equals 2 0 u03bcm the relatively shallow trench depth x t and the relatively shallow junction depth in the trench region x p u2212 act together to offset the increase in gate charge that would ordinarily occur in connection with the high cell density of the device of fig2 at the same time if the junction depth x p u2212 in the termination area were to be reduced to the same degree as the junction depth x p u2212 in the trench area then breakdown in the termination area could become problematic however in the present invention the relatively deep junction depth in the terminal region x p u2212 discourages device breakdown in that region as will be appreciated more fully below due to the placement of a terminal masking feature such as terminal oxide feature 206 relative to the adjacent peripheral trench 201 the widths of the p body regions which includes the p u2212 regions 204 as well as the p regions 212 in the terminal area w p are substantially greater than the widths of the p body regions in the trench regions w mesa as will be more fully appreciated after reviewing the process discussion below where the width w mesa is sufficiently narrow substantial redistribution of the dopant in the trench area p u2212 regions 204 occurs during processing leading to a relatively shallow junction depth x p u2212 in the trench region on the other hand where w p is substantially greater than w mesa significantly less dopant redistribution will occur in the p u2212 regions 204 of the termination area leading to a.