3 after the heating process the amorphous rate in the overall volume of the layer should amount to at least 20 preferably gt 30 in the present case approximately 40 in order to ensure improved selectivity due to the increased band gap of a si compared to c si additionally during this high temperature step in an advantageous further development of the exemplary embodiment the doping substance may diffuse from the layer 3 into the substrate in a section 4 such that a shift of the p n transition and or the high low junction which allows bsf into the absorber can occur see fig1 c the exemplary embodiment shown here represents the shift of the high low junction subsequently not shown metallic contact structures are applied on the sic layer 3 which are connected to the sic layer 3 in an electrically conductive fashion fig1 c shows therefore an exemplary embodiment of a semiconductor component according to the invention with the above mentioned metallic contacts not being illustrated in order to finish the semiconductor components as photovoltaic solar cell or led additional elements may be added particularly emitter diffusion in the present case a n type for example using phosphor as the.