should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein it will also be appreciated by those of skill in the art that references to a structure or feature that is disposed u201c adjacent u201d another feature may have portions that overlap or underlie the adjacent feature embodiments of the invention now will be described generally with reference to gallium nitride based light emitting diodes on silicon carbide based substrates however it will be understood by those having skill in the art that many embodiments of the invention may be employed with many different combinations of substrate and epitaxial layers for example combinations can include algainp diodes on gap substrates ingaas diodes on gaas substrates algaas diodes on gaas substrates sic diode on sic or sapphire al 2 o 3 substrate and or a nitride based diodes on gallium nitride silicon carbide aluminum nitride sapphire zinc oxide and or other substrates fig1 illustrates an led chip having a shaped substrate specifically the led chip 30 shown in fig1 has a substrate 10 having a first surface 21 and a second surface 23 the active region 12 is formed by epitaxial layers deposited on the first surface 21 an ohmic contact 18 is formed on p type region 16 an n type electrode 22 is formed on second surface.