illustrated in the drawings and described in the following written specification it is understood that no limitation to the scope of the disclosure is thereby intended it is further understood that this disclosure includes any alterations and modifications to the illustrated embodiments and includes further applications of the principles of the disclosure as would normally occur to one skilled in the art to which this disclosure pertains as shown in fig1 a pressure sensor assembly 100 includes an upper die assembly 108 a conducting member 116 a conducting member 120 a bonding member 122 and a lower die assembly 124 the pressure sensor assembly 100 is shown positioned on a substrate 132 such as a printed circuit board or any other substrate that is suitable for mounting electrical components with reference to fig2 the upper die assembly 108 is formed from silicon and includes a mems pressure sensor 140 the pressure sensor 140 is a capacitive pressure sensor that defines a cavity 172 and includes an upper electrode 180 and a membrane 188 that is movable with respect to the upper electrode the membrane 188 is preferably made of epitaxial silicon the upper electrode 180 is defined in the upper die assembly 108 and is formed by doping a portion of the upper die assembly alternatively the upper electrode 180 is formed by using a doped silicon layer on an insulating film above the substrate of the upper die assembly 108 the area of the upper electrode 180 is approximately 0 01 to 1 square millimeter 0 01 1 mm 2 an electrical lead 156 connects the upper electrode 180 to the conducting member 116 the membrane 188 is positioned beneath the cavity 172 defined by the.