value is measured as 1 8 u00d7 10 6 u03c9cm 2 which is better than nbn devices dark current density is also obtained in the range of 4 7 u00d7 10 u2212 7 a cm at zero bias and vb 0 3v respectively at 79k application_number US 201214411407 A description a structure realized to fulfill the objective of the present invention is illustrated in the accompanying figures in which fig1 is the schematic view of the n on p structure fig2 is the schematic view of the p on n structure fig3 is the schematic band diagram of the inas alsb gasb sl n structure with electron and heavy hole minibands the components illustrated in the figures are individually numbered where the numbers refer to the following 1 novel n structured inas alsb gasb infrared detector structure 2 gasb substrate 3 gasb buffer layer 4 lattice matched algaassb buffer layer 5 bottom contact layer 6 set of inas alsb gasb superlattice layers 61 p type layer 62 active layer 63 n type layer 7 capping layer e electron miniband h heavy hole miniband a novel n structured inas alsb gasb infrared detector structure 1 to be used as a pixel fundamentally comprises at least one gasb buffer layer 3 residing on top of a gasb substrate 2 at least one lattice matched algaassb buffer layer 4 residing on top of gasb buffer layer 3 bottom contact layer 5 residing on top of algaassb buffer layer 4 at least three sets of inas alsb gasb superlattice layers 6 u2014 at least one being p type layer 61 at least one being n type layer 63 and at least one constituting the active.