an unexposed wafer with a developing step that measurement involves the dark erosion of the photoresist 34 uviihs 0 6 34 after the developing step with an e 2 nozzle and the developer 34 tmah 238 wa 34 a photoresist is applied to a 200 mm silicon wafer after that an e 2 nozzle is moved to the middle of the wafer and developer is applied to the wafer from the 104 spray jets of the e 2 nozzle during that application the wafer rotates 180 u00b0 the developer which is applied spreads over the wafer in such a way that a 34 developer puddle 34 occurs after a certain development time the puddle is rinsed off with h 2 o fig8 shows a resultant dark erosion for two wafers the greater resist erosion toward the middle of the wafer is clearly apparent 50 measurement points were disposed diagonally over the wafer from one edge to the other in that measurement the width of resist structures is measured and the same exposure dose and the same focus on the silicon substrate is set over the entire surface of the wafer 200 mm silicon wafers were painted with the photoresist 34 uviihs 0 61 34 in a thickness of 640 nm and exposed to light using a resolution reticle template 250 nm strips were measured tmah 238 wa was used as the developer as can be seen from fig9 the dimensional fluctuation over the wafer totaled 57 8 nm once again 50 measurement points were disposed diagonally across the.