is disposed on the second conductive material 162 to fill in the remaining volume of the capacitor apertures 151 and electrically isolate the capacitors 170 from conductive materials disposed on the microelectronic substrate 112 in subsequent operations after the capacitors 170 are formed a plug aperture 152 is etched into the base dielectric material 150 and filled with a conductive material to provide a conductive plug 180 extending between components of the microelectronic substrate 112 for example a transistor not shown positioned beneath the capacitors 170 and electrical contacts not shown positioned above the capacitors 170 in one aspect of this embodiment the conductive plug aperture 152 is separated from the capacitor apertures 151 by a distance t 1 of about 0 14 micron or less and adjacent capacitor apertures 151 are separated by a distance t 2 of about 0 15 micron or less in another aspect of this embodiment the distance t 1 can be about 0 10 micron or less and the distance t 2 can be about 0 125 micron or less in still another aspect of this embodiment six capacitor apertures 151 can be arranged in a ring around a single conductive plug aperture 152 with a diameter of the ring being about 0 4 micron in other embodiments the spacings between adjacent capacitor apertures 151 and or between the capacitor apertures.