arsenide and gallium nitride the surfaces of these devices commonly comprise structures formed from one or more of the following materials silicon polysilicon silicon dioxide silicon oxy nitride metals e g copper aluminum gold tungsten tantalum low k dielectrics polymer dielectrics and various metal nitrides and silicides the device surface 14 can also include raised structures such as solder bumps and metal posts and pillars a fill material is applied to the device surface 14 of substrate 12 so as to form a fill layer 22 fill layer 22 has first and second surfaces 24 26 as well as outermost portion 28 it is preferred that the fill layer 22 be applied so that it has a thickness measured at its thickest point of from about 5 u03bcm to about 100 u03bcm more preferably from about 5 u03bcm to about 50 u03bcm and even more preferably from about 10 u03bcm to about 30 u03bcm application of the fill material can be carried out via any conventional means including spin coating casting from solution e g meniscus coating or roller coating ink jetting and spray coating when applied via spin coating the material forming fill layer 22 will typically be spin coated at speeds of from about 500 rpm to about 5 000 rpm for a time period of from about 60 seconds to about 120 seconds the layer would then be baked near or above the boiling point of the solvent s present in the fill layer 22 e g from about 80 u00b0 c to about 250 u00b0 c for.