temperature in a range of from 200 to 700 u00b0 c preferably the tungsten nitride film is deposited at a pressure of 0 1 torr and a temperature of 600 u00b0 c the flow ratio of nh 3 wf 6 may be in a range of from 0 5 to 100 but is preferably 4 the flow ratio of h 2 wf 6 may be in a range of from 0 to 500 but is preferably 37 according to the present invention a plasma generating device 27 is included in reaction chamber 20 the use of a plasma field to treat the surface of wafer 23 prior to the deposition of the tungsten nitride film improves the performance characteristics of the resulting barrier field the plasma treatment is performed at an power in the range of from 20 to 500 w at a pressure in a range of from 0 01 to 1 torr and at a temperature in a range of from 200 to 700 u00b0 c preferably the plasma treatment is performed at a power 100 w a pressure of 0 1 torr and a temperature of 600 u00b0 c the plasma treatment may be accomplished by using an rf radio frequency plasma or an ecr electron cyclotron resonance plasma using a non active gas such as ar h 2 n 2 and he fig3 through 5 are sectional views illustrating a method of forming metal wiring for a semiconductor device using tungsten nitride according to the present invention referring to fig3 an active region is defined by the selective formation a field insulating film 32 on a substrate 31 after formation of an impurity diffusion region 34 on a.