which is designated in its entirety by 1 the electronic component 1 comprises a semiconductor element or die 3 having a sensor technologically active and or emitting device 7 on a first side 5 which is referred to as the top side hereinafter the sensor technologically active and or emitting device 7 may be by way of example a photoelectric layer for converting electrical signals into optical signals or vice versa on its top side 5 the semiconductor element 3 is joined together with the underside 13 of a patterned support 9 the connection between component 3 and patterned support 9 is imparted by means of a connecting layer 15 situated between these parts the patterned support 9 has a passage opening 17 as a structure 11 which is functional for the sensor technologically active and or emitting device 7 said passage opening defines a cavity 18 together with the covering 19 u2014 applied to the support 9 u2014 and the top side 5 of the semiconductor element 3 given a suitable choice of the connecting layer 15 the cavity 18 can be hermetically partitioned from the surroundings so that by way of example no moisture can penetrate such a connection between component 3 and support 9 may be achieved inter alia by anodic bonding in the case of an optoelectronic component what is achieved.