the semiconductor device 10 having bond pads 12 including a copper layer base 12 u2032 barrier layer 12 u2032 u2033 and layer of metal 12 u2033 thereon the semiconductor device 10 may be assembled to a conductive lead 23 of a tab tape 21 for bonding a conductive lead 23 to the bond pad 12 of the semiconductor device 10 using any suitable bonding process 910 and apparatus referring to drawing fig5 j a process 1000 for the formation of a bond pad 12 including a copper layer base 12 u2032 and a layer of metal 12 u2033 thereon for conductive lead 23 of tab tape 21 bonding purposes as described hereinbefore is illustrated as illustrated in step 1002 a substrate 11 as described hereinbefore for a semiconductor device 10 has a layer of copper or copper alloy deposited thereon using any desired deposition process subsequently in step 1004 at least two barrier layers 12 u2032 u2033 are deposited on the copper layer base 12 u2032 in step 1006 a metal layer 12 u2033 is deposited on the barrier layers 12 u2032 u2033 using any desired deposition process as described hereinbefore such as electrodeposition electroless deposition etc in step 1008 the copper layer base 12 u2032 barrier layers 12 u2032 u2033 and metal layer 12 u2033 are patterned to form the bond pad 12 having a copper layer base 12 u2032 barrier layers 12 u2032 u2033 and layer of metal 12 u2033 thereon for good wire bonding properties a layer of insulating material 13 is typically applied to the active surface 14 of the.