as shown in fig6 c a contact hole 116 is defined to expose the drain electrode 112 of the thin film transistor 106 also the protective film 150 is removed at an area where the storage capacitor 120 is positioned thereby exposing the gate insulating film 144 the protective film 150 is made from an inorganic insulating material identical to the gate insulating film 144 or an organic insulating material such as an acrylic organic compound having a small dielectric constant bcb benzocyclobutene or pfcb perfluorocyclobutane etc a transparent electrode material is entirely deposited onto the protective film 150 by a deposition technique such as sputtering etc thereafter the transparent electrode material is patterned by photolithography and etching using a fourth mask to thereby provide transparent electrode patterns including the pixel electrode 118 the pixel electrode 118 is electrically connected via a contact hole 116 to the drain electrode 112 also the storage capacitor 120 consists of a pixel electrode 118 overlapping a pre stage gate line 102 with the gate insulating film 144 therebetween the transparent electrode material is selected from indium tin oxide ito tin oxide to indium zinc oxide izo or the like as described above in the first embodiment of the present invention the protective film 150 is removed from the storage capacitor 120 to thereby increase a capacitance of the storage capacitor 120 accordingly a feed through voltage u03b4vp is minimized thus a residual image problem such as flicker can be minimized to improve the picture quality fig8 is a section view showing a structure of a thin film transistor array substrate according to a second embodiment of the present invention the thin film transistor substrate shown in fig8 has the same elements.