as shown in fig4 an aluminum alloy is used for making a scan line 13 or a gate electrode in this invention therefore ito indium tin oxide cannot be used in the pixel electrode 5 because a partial battery reaction will result and the abnormal corrosion or ito blackening issues usually occur as a result the pixel electrode 5 is generally a transparent electrode made of a thin film oxide such as titanium nitride or zirconium nitride the nitride of the transparent pixel electrode and the p u2014 sinxo of the gate insulating film 8 cannot have a large selectivity for creating a contact hole 34 by a dry etching method and the manufacturing processes of the previous embodiments as shown in fig5 to 53 cannot be used anymore to solve this problem the present invention uses an aluminum alloy series contact pad to solve the aforementioned problem in the second time of the photolithographic procedure the thin film semiconductor components are separated and the contact hole 34 is formed this procedure is illustrated in fig4 because this procedure also adopts the halftone exposure method the procedure of the first time can be used for performing two operations the process adopted in fig1 and 17 is a halftone.