11 the panel 11 is a set of the substrates 2 a the semiconductor chips 1 are bonded to the panel 11 and form an array as shown in fig2 a the gap between the semiconductor chips 1 is narrower than the gap between the semiconductor chips in the prior art semiconductor device this is because of the fact that an extremely thin rotating disk blade is used as a cutter the bonding wires 3 are connected to the conductive pattern 2 e around each of the semiconductor chips 1 for this reason the semiconductor chips 1 are spaced to the extent permitting a bonding machine to connect the conductive wires 3 to the conductive patterns 2 e and the rotating disk blade to pass between the adjacent conductive patterns 2 e if the semiconductor device is a facedown type connecting the semiconductor chip 1 to the conductive pattern 2 e by means of bumps the manufacturer makes the gap narrower the manufacturer makes the gap as narrow as possible in so far as the synthetic resin flows into the gap between the adjacent semiconductor chips 1 subsequently the array of semiconductor chips 1 is sealed in a large piece of the synthetic resin.