epitaxial layer s grown over crystal s while the reduction in thickness due to etching will depend upon the combination of etchant s and etched crystal s and or epitaxial layer s grown over crystal s on the order of roughly 5 nm of crystal and or epitaxial layer grown over crystal can be expected to be etched away together with the ultrathin organic layer see region indicated by reference numeral 6 at fig1 c because surface s on which vapor deposition is to be carried out will be extremely clean immediately following such etching it is desirable that this etching operation be performed immediately prior to the vapor deposition operation that is carried out subsequent thereto following such etching operation electron beam vapor deposition is used to form for example approximately 200 nm of ti and or auge serving as first metal wiring layer 5 over the entire surface of the semiconductor crystal s and or the epitaxial layer s grown on crystal s metal film forming operation see fig1 d the workpiece is thereafter immersed in acetone or other such solvent to cause liftoff to take place leaving the desired metal pattern 4 resist removal operation see fig1 e more specifically because window portion s 3 as formed by patterning operation s is are formed such that sidewall s thereof is are undercut immersion in the foregoing etchant s causes separation of resist 2 such that as shown at fig1 e only the desired metal pattern 4 remains over crystal s 1 as a result.