trench side wall having a single crystallographic orientation and forming a transistor device partially disposed on the faceted crystal region in the side wall the faceted crystal region may be formed by growing an oxide collar such as by local thermal oxidation under oxidation conditions selected to promote a higher oxidation rate along a first family of crystallographic axes than along a second family of crystallographic axes application_number US 89442701 A description referring now to the drawing in which like reference numbers refer to like elements throughout fig1 12 show various aspects of an exemplary dram cell of the present invention and intermediate steps in the process for making the cell as shown in fig1 and 3 a typical deep trench storage capacitor 10 is formed into a pad 22 and a substrate 24 by conventional processing techniques well known in the art for example an optical lithography step may be used to form a pattern on pad 22 then a dry etching step such as reactive ion etching rie may be used to create a trench 20 to a desired depth through pad 22 and into substrate 24 the cross sectional pattern of deep trench 20 is typically an ellipse that cuts across crystal axes a and b for example as shown in fig1 axis a may have a 011 crystallographic orientation and axis b may have a 001 orientation substrate 24 is typically silicon and pad 22 is typically.