the one gap 21 centrifugal force occurs in the wafer circumferential direction in the chemical spinning off step of the cleaning process therefore in the lattice shaped wiring pattern the gaps are so provided as to allow the chemical to be discharged from the inner to outer side on the wafer improving the chemical discharge efficiency fig5 is an illustration showing another aspect of a shape of the gap 21 formed in the second wiring layer 15 a gap 23 is characterized by a skewed discharge port with an increased length inside the pattern so that the chemical applied inside the pattern of the second wiring layer 15 is easily discharged along the wafer rotation direction during the spin drying in this way the chemical discharge efficiency is expected to be increased furthermore as shown in fig6 the layout in fig4 is applied to the shape of the gap 23 in fig5 so that the skewed gaps 24 are provided at diagonally opposite positions in the lattice here it is desirable that the gap 21 22 23 or 24 is larger than 1 10 of one side of a pixel cell or the pixel cell pitch and smaller than 3 10 of the same in view of the pixel size and light blocking effect the gap 21 22 23 or 24 is formed in the part.