a reactor block 1 referring to fig2 reactor 100 includes reactor chamber 101 in one embodiment the chamber is that of an epsilon u00ae e3000 300 millimeters mm epitaxial reactor or e2500 or e2000 200 mm epitaxial reactor manufactured by asm inc within reactor chamber 101 is wafer holder on stage 103 for securing substrate 102 onto which depositions are to be made reactor 100 also includes a heat source disposed in reactor chamber 101 such as in wafer holder 103 e g a thermocouple the temperature within reactor chamber 101 may be monitored by one or more temperature gauges not shown source gases and carrier precursor gases enter the reaction chamber at port 120 and flow through reaction chamber 101 to chamber exhaust port 121 chamber exhaust 104 is coupled to vacuum 105 which maintains a desired pressure within the chamber the pressure within reaction chamber 101 may be monitored by one or more pressure gauges not shown in one embodiment the temperature gauges and or the pressure gauges are coupled to a process controller that regulates the temperature and pressure within reaction chamber 101 introduction of gases into the chamber are managed by manifold control valves 107 109 111 113 and 115 source and carrier gases are generated at source points 106 108 110 112 and 114 in one embodiment the control valves are coupled to a system controller in another embodiment the gases introduced through the control valves are carrier precursor gases a carrier precursor gas is a gas or.