of phase locked hybrid gmr tmr devices is used as a tunable oscillator for such a device the output power in excess of 1 mw can be achieved which is similar to that generated by conventional on chip vcos since the spin torque oscillators can be produced in parallel by advanced photo lithography and etching techniques and they take a few orders of magnitude less area than the conventional vcos the arrays of hybrid gmr tmr spin torque oscillators can generate microwave power per chip area significantly exceeding that achievable with any conventional vco typical tuning range for a conventional vco is u02dc 10 spin torque excitation frequency can be tuned in a range exceeding 50 15 18 therefore the tuning range of the spin torque oscillators is at least several times higher than that of conventional vcos note also that spin torque vcos can be tuned by both external magnetic bias field and by the bias dc current passing through the generating nanocontacts typical central frequency can be chosen in the interval of 10 40 ghz 18 see e g fig4 in 18 it is important to note that the presence of the bias magnetic field is not necessary neither for the operation of the spin torque vco at a fixed frequency nor for its tuning in the 50 frequency range the static bias field necessary for the saturation of the u201c free u201d ferromagnetic layer of the device typically made of permalloy can be provided by the shape anisotropy of the u201c free u201d.