associated with the quantum dot r j these microcavities can be formed by growing layered structures such as indium gallium arsenide gallium arsenide or some other suitable layered structure of light confinement after the layered structure is grown the microcavity is formed by etching mesas or u201c whispering galleries u201d into the layered structures for a high quality factor a silicon microcavity can be plasma treated to form a highly reflecting silicon dioxide layer the microcavities 210 220 have different lengths in the z direction and the x direction so that a scattered photon cannot change its direction the photon source 130 initiates the teleportation process by emitting a single photon j that travels in the z direction this photon can have a wavelength of 1 55 microns 800 nanometers or some other suitable wavelength in addition the photon j can be polarized in the x direction and enter the microcavity 210 that contains the quantum dot r j u2032 the quantum dot r j u2032 is initialized parallel to x before the photon j interacts with the quantum dot r j u2032 the initial wave function describing both the photon and the spin associated with dot r j u2032 is u03c8 pe u2032 1 0 u2190 u2032 which is a product state meaning that the photon and electron spin are not u201c entangled u201d after this photon interacts with the quantum dot r j u2032 the resulting spin wave function is u03c8 pe u2032 1 t.