illustrated in the inset of fig8 the responsivity varies from 0 1 to about 0 4 a w when the bias voltage is increased from 0 to 100 v to our knowledge this is so far the shortest cut off wavelength achieved for semiconductor detectors we intend to disclose three basic detector structures based upon aln all of the structures are grown epitaxially on aln epilayer templates on suitable substrates we envision several distinctive advantageous features of the detector structures by incorporating highly resistive undoped or intrinsic aln epilayer gt 10 12 cm u03c9 as template by doing so parasitic conduction and trapping density in the detector structure and leakage current will be eliminated and the sensitivity and device stability will be improved furthermore the insertion of a high quality aln epilayer template prior to the subsequent growth of device layers will also reduce defect density and enhance doping efficiency in aln schottky barrier and p i n detector structures furthermore due to the compact crystal structure and elimination of alloy effects schottky contacts formed directly on aln can provide very low leakage current and high breakdown voltage msm detector structure is the simplest one to construct msm detectors possess desirable features such as high gain low dark current high speed large bandwidth and high sensitivity some of these outstanding attributes have been demonstrated in section ii feasibility demonstration above fig9 is a schematic view of a basic aln msm detector structure we wish to disclose schottky barrier detectors are particularly attractive due.