of reusing the same that allow a good use of the semiconductor device without degrading characteristics even when reused the semiconductor memory device comprises information holding means for holding information that indicates an operation mode of said memory cell array a decoder for generating to said memory cell array a selection signal to designate at least a read address of said memory cell array in accordance with an address signal that comprises plural bits and mode setting means for fixing a logical value of at least one bit of said plural bits of said address signal in accordance with the information held by said information holding means and supplying said address signal on which fixing of the logical value is effected to said decoder application_number US 201113179206 A description an embodiment of the present invention will be described below with reference to the accompanying drawings fig1 shows the structure of a non volatile semiconductor memory device presented as the first embodiment of the present invention the semiconductor memory device is provided with an input selector circuit 1 a cell fuse 2 a decoder 3 and a memory cell array 4 two bits a 1 a 2 of the input address signal having i bits a 1 to ai where i is an integer equal to 3 or more are supplied to the input selector circuit 1 to which the cell fuse 2 is connected the cell fuse 2 constitutes an information holding means that comprises a nonvolatile memory device generally the setting of erasure or alteration of the stored content of the content held in the cell fuse 2 is performed at the maker of the semiconductor memory device and the setting operation is not made possible for the user the.