amorphous silicon layer asparc can be deposited using lpcvd processes at a temperature between about 530 u00b0 to 600 u00b0 c to a thickness between about 300 to 1000 angstroms the thickness chosen is crucial since the destruction or cancellation of scattered or reflected light will be optimum at a specific thickness of the asparc layer the roughness of this amorphous film will scatter incident light during subsequent photoresist exposures and thus minimize unwanted photoresist exposures or notching due to reflective light specifically in the regions where the severe topography of the fox region exists another form of the asparc layer 6 can be created by growing hemi spherical grain hsg silicon on the polycide surface this is accomplished by depositing silicon using lpcvd processing at a temperature between about 550 u00b0 to 580 u00b0 c again to a thickness between about 300 to 1000 angstroms the hsg film obtained also has a rough surface and therefore is effective in reducing the reflected light occurring during the photolithographic exposure of the polycide gate level the reduction in reflected light specifically in the region of the field oxide allows narrower polycide lines and spaces to be ultimately obtained a layer of lpcvd silicon dioxide 7 is next deposited using tetraethylorthosilicate teos at a temperature between about 700 u00b0 to 750 u00b0 c to a thickness between about 1000 to 3000 angstroms photoresist is then applied exposed and developed to form the narrow photoresist images 8 the polycide lines it should be noted that the narrow spaces 9 approximately between 0 2 to 1 5 um between the polycide images in particular over the fox topography would have been difficult to control if not.