for example via a fiber optic with reference to fig9 the photo detector may be coupled to a signal detector current detector and or other circuitry to measure condition the current output by the photo detector for example output via the p and n doped regions in response to the detection of light data in the exemplary embodiments illustrated in fig1 8 and 9 notably the current photo detector may be a high speed current detector or the like all current sensing circuitry and architectures now known or later developed are intended to fall within the scope of the present inventions further the p and n regions in the embodiments described and or illustrated herein may be formed by or in a semiconductor for example silicon doped with acceptor donor impurities notably the photo detector photo detector array and or die device including the photo detector and or photo detector array may include an anti reflective material disposed there over or thereon in one embodiment an anti reflective material is disposed over or on the light absorbing region of the photo detector or photo detectors of the array of photo detectors in another embodiment an anti reflective material may be disposed on or over the entire structure or a significant portion thereof as noted above the present inventions may be implemented in a discrete photo.