which may be a transparent oxide is deposited on semiconductor 23 as shown in fig2 b a metal grid having a plurality of fingers 27 is deposited on coating 25 for example by condensing a metal from a vapor and using conventional masks and etchants as necessary to establish the desired finger dimensions islands 29 of coating 25 are formed beneath grid 27 as is preferred but not shown in fig2 c islands 29 project beyond the width of fingers 27 each grid finger 27 is electrically connected to substrate 21 through coating 25 and semiconductor 23 the electrical connection is formed by 34 burning 34 a highly conducting path 31 from each finger 27 through coating 25 and semiconductor 23 to substrate 21 paths 31 may be created by briefly passing a relatively large localized current through the path much in the nature of spot welding alternatively a high energy density laser beam may be directed at each finger 27 to form each of the highly conducting paths 31 that are shown schematically in fig2 d as already described in relation to fig1 an encapsulant 33 is applied to the front surface of the structure opposite substrate 21 see fig2 e thereafter islands 35 of substrate 21 are formed with the.