lever arm formation 126 with respect to the substrate 32 the layers 132 134 can be of a number of materials that are used in integrated circuit fabrication the applicant has found that titanium aluminum nitride tialn is a suitable material for the layer 132 and that titanium is a suitable material for the layer 134 the load formation 128 defines part of the proximal end wall 110 the load formation 128 is composite with a primary layer 136 and a secondary layer 138 as with the sealing structure 130 the layers 136 138 can be of any of a number of materials that are used in integrated circuit fabrication however as set out above successive deposition and etching steps are used to fabricate the nozzle arrangement 100 it follows that it is convenient for the layers 136 138 to be of the same material as the layers 132 134 thus the layers 136 138 can be of tialn and titanium respectively the nozzle arrangement 100 includes an ink ejecting member in the form of an elongate rectangular paddle 140 the paddle 140 is fixed to the load formation 128 and extends towards the distal end wall 108 further the paddle 140 is dimensioned to correspond generally with the nozzle chamber 106 it follows that displacement.