iaddend the v 2 o 3 is operated in its semiconductor phase its deposition is preferably by the process of ion beam sputter which permits the deposition of very thin layers such as 50 75 mm iadd nm iaddend this material was thus selected for its low ir reflectance together with a relatively high temperature coefficient of resistance tcr the ends of the resistive paths 21a and 21b are continued down the slope area 30 embedded in 20 39 and 22 39 to make electrical contact with contact pads 31 and 32 on the lower level fig2 also shows nitride window cuts 35 36 and 37 which are opened through the silicon nitride layers 20 and 22 to provide access to the phos glass beneath for dissolving it from beneath the detector plane the sloping supports may be of the necessary length is provide adequate support and thermal isolation for the upper level 11 although the description is basically in terms of individual detector pixels the invention is directed for use to an x y array assembly of adjoining pixels forming an imaging or mosaic detector array each pixel assembly may cover an area about 50 microns on a side as an example referring again to fig1 a sequence of fabrication steps for the upper.