mesa 11 above mesa 11 and inp layer 6 there lies a layer 7 of n type inp which extends over the entire cross section of the semiconductor laser and is covered by a dielectric layer 12 of sio 2 above mesa 11 by a mesa 13 a further dielectric layer 14 of sio 2 a metal layer 15 and a third dielectric layer 16 of sio 2 some other dielectric material may also be used instead of sio 2 mesa 13 is composed of an ingaasp layer constituting photon emission region 17 a p type inp layer 18 serving as covering layer and a p type ingaas or a p type ingaasp layer 19 serving as contact layer above the latter there is again provided a metal layer 20 which on the sides also covers layer 12 and is provided with a electrical contact 201 metal layer 15 is provided with a contact 151 a current i t for tuning the photon injection from photon emission region 17 flows through contacts 151 and 201 contact 151 together with contact 211 simultaneously serve to pick up the laser control current i l in another embodiment not shown here the upper side of layer 7 is also provided with a bragg grating above mesa 11 this is a higher order grating while the bragg grating on layer 2 is a grating of the first order in this case the semiconductor laser has two waveguide layers the semiconductor laser fig2 can be produced in that a diffraction grating is etched either directly onto semiconductor substrate 1 fig3 a or initially the.