a through 2d are cross sectional diagrams illustrating method for forming conductive line of semiconductor device in accordance with the present invention referring to fig2 a a device isolation film not shown for defining an active region is formed on a semiconductor substrate 11 thereafter a stacked structure of a gate oxide film 15 a polysilicon film 17 for gate electrode a tungsten silicide layer 19 and a hard mask film 21 is formed on the semiconductor substrate 11 the stacked structure is then etched to form a gate electrode next an n type or a p type impurity is ion implanted in the semiconductor substrate 11 using the gate electrode as an implant mask to form an impurity junction region 13 thereafter an insulating film not shown is formed on the semiconductor substrate 11 and then anisotropically etched to form an insulating film spacer 23 at a sidewall of the gate electrode next a lower insulating film 25 planarizing the entire surface is formed on a semiconductor substrate 11 the lower insulating film 25 and the hard mask film 21 are selectively etched to form a first contact hole 27 exposing the tungsten silicide layer 19 and a second contact hole 29 exposing the impurity junction region 13 natural oxide films at the bottoms of the first contact hole 27 and the second contact hole 29 may be removed.