is used the electrode element 14 is made by an aluminum film having a thickness of 1 u03bcm the bonding is made by the usual wire bonding device with necessary modifications added thereto under the following conditions bonding load is 80 gf bonding temperature is 350 u00b0 c the power of ultrasonics generation is 0 8 w the ultrasonic applying time is 100 ms the obtained bonded portion provides the shearing strength of 10 to 13 kg mm 2 which is equivalent to that of conventional tab leads made by the conventional bonding device additionally the bonded condition is also good as shown in fig1 thus the bonding experiment according to the present invention can be applied to the bonding of the semiconductor chip for tab packaging in the bonding method according to the present invention since the process of bump forming steps independently from the pounding step is not required all facilities and steps currently required for bump forming are not needed enabling to prepare for tab packaging of semiconductor chips having various kinds in a small production lot at a lower cost furthermore the conventional wire bonding device can be applied to the bonding method according to only some modification added thereon serving an advantage for realization thereof as is clear from the above description the bonding method according to the present invention provides the following advantages when applied to tab packaging of the semiconductor chip in the present invention the bump forming steps which was conventionally performed before and independently from the pounding step of the bonding tool is abolished and the bumps are made at the same time when the bonding tool pounds on the leads for bonding thereof resulting in a decrease of the bonding.