linear semiconductor components is used in the area of the antenna for pulse shaping application_number US 201113155424 A description referring now to the figures of the drawing in detail and first particularly to fig3 thereof there is shown a highly simplified configuration or assembly for generating a high energy microwave pulse for example a ds damped sinusoid pulse the assembly comprises an energy source 1 for example a battery with a very high voltage the energy source 1 feeds a pulse generator 2 for example a so called marx generator which produces a voltage pulse in the order of magnitude from for example 0 3 to 3 0 mv and with the shape shown in fig1 the above mentioned pulse is converted by a suitable pulse shaping unit pgu 3 to a damped sinusoidal oscillation ds as is illustrated in fig2 for example the ds pulse is then emitted to the surrounding area via the antenna 4 according to the invention of fig4 a large area configuration 6 15 of conductor components 5 in particular semiconductor components is provided preferably in the area of the antenna 4 the conductor components 5 are cascaded both in parallel and in series the configuration 6 15 is subjected directly to the electrical and magnetic field of the pulse from the pulse generator 2 or the ds pulse from the pulse shaping unit 3 as a result of this the entire.