connection structure 9 in accordance with fig5 a firstly the polysilicon connection structure 9 is etched back selectively this produces a depression 19 whose depth is about 50 to 100 nm in a next step there are deposited over the whole area a thin first contact layer for example made of ti thickness 5 to 50 nm and above that a second thicker contact layer for example made of ir thickness about 50 to 250 nm the deposition of the contact layers is controlled in such a way that the depression 19 is first partly filled after the deposition of the first contact layer and is completely filled by the deposition of the second contact layer the two contact layers are then polished back by means of cmp the covering oxide layer 7 serves as a stop layer here a surface which is plane over the whole area is produced a pot like first contact layer structure 15 1 a made of ti and within the latter a second contact layer structure 15 2 a made of e g ir being realized above the reduced connection structure 9 afterward a barrier incorporation layer is produced and patterned in accordance with.