the gas molecules therefore increasing the impingement rate and density of surface nuclei coverage a trade off for increasing total pressure is an increase in the likelihood of gas phase nucleation which can lead to incorporation of particles formed in the gas phase into the deposited film for deposition of the bulk layer the total pressure is typically reduced back to 40 torr the flow rate of the sih 4 can also be increased above the conventional 20 sccm to between 35 sccm and 80 sccm typically 45 sccm to produce a nucleation layer with the desired properties increased sih 4 flow rate results in reduced nuclei size but can also increase undesirable gas phase nucleation effects the ratio of wf 6 sih 4 partial pressures in this embodiment is in the range of 1 1 to 17 1 typically 9 1 fig7 is a bar graph of the reflectivity of 5000 u00e5 tungsten films deposited using the various processes of the embodiments for comparison the reflectivity was measured result 710 on a film deposited by the conventional process using the parameters listed in table 1 for results 720 760 all parameters used were those listed in table 1 except for the parameters noted in the following description for result 720 the sih 4 flow rate was increased to 45 sccm decreasing the wf 6 sih 4 ratio to approximately 9 1 depositing the nucleation layer long enough to achieve a 600 u00e5 thickness approximately 12 seconds at 350 u00b0 c gave result 730 for result 740 the pressure used for.