of 6 4 is induced into a ferroelectric state which is only returned to an antiferroelectric filed by heating and in the pnzst with a zr and sn ratio of 6 4 a pnzst in a range with the titanium content y u2267 0 1 shows a ferroelectric state from starting thus by providing a pnzst with a titanium content y gt 0 065 while zr and sn have a certain ratio the pnzst can show a p e characteristic identical to a general ferroelectric material fig8 illustrates a graph showing a fatigue characteristic vs number of switching cycles of a bulk antiferroelectric material and fig9 a u02dc 9 b illustrate photographs showing a behaviour of a domain wall when a field is applied to the bulk antiferroelectric material shown in fig8 that is referring to fig8 in general bulk antiferroelectric material exhibits no fatigue up to a number of switching cycles in a range of 10 9 times at all because the polarization inversion of the antiferroelectric material only occurs at 180 u00b0 most of typical ferroelectric films exhibit a polarization inversion at 90 u00b0 with a greatest stress caused on the other hand the 180 u00b0 polarization inversion causes almost no stress thus an antiferroelectric film with a 180 u00b0 polarization inversion shows a fatigue less than a general.