5 a 5 b described herein could include a variety of single and multi element devices in one example the dcbs 5 5 a 5 b could be composed of any number of depletion mode n channel transistors connected in a serial and or parallel arrangement in another example the dcb 5 5 a 5 b could be a single depletion mode n channel transistor non limiting examples including a depletion mode n channel junction field effect transistor jfet a depletion mode n channel metal oxide semiconductor field effect transistor mosfet and a depletion mode insulated gate bipolar transistor igbt the ecbs 6 6 a 6 b 7 7 a 7 b described herein could include a variety of single and multi element devices in one example the ecbs 6 6 a 6 b 7 7 a 7 b could include any number of enhancement mode n channel transistors connected in a serial or parallel arrangement an ecb 6 6 a 6 b 7 7 a 7 b in its simplest form could be a single enhancement mode n channel transistor non limiting examples including an enhancement mode n channel junction field effect transistor jfet an enhancement mode n channel metal oxide semiconductor field effect transistor mosfet and an enhancement mode insulated gate bipolar transistor igbt referring now to fig1 c the protection device 54 is shown whereby the dcb 5 is a depletion mode n channel jfet and the ecbs 6 7 are each one enhancement mode mosfet components and architecture are identical to those in fig1 b.