aa m contact 19 is provided between a midpoint between the two upper electrodes 15 connected to the aa m contact 19 and a midpoint between the two upper electrodes that share the lower electrode 13 each of the metals 18 has such a shape that connects two upper electrodes 15 and one aa m contact 19 to each other more specifically the metal 18 on the bit line bl side has an overhang projecting to the bit line bl side the aa m contact 19 is connected to the overhang of the metal 18 the diffusion layer 11 connected to the aa m contact 19 has substantially the same shape as that of the metal wiring layer 18 next the reason why the feram that has the structure described in this embodiment can reduce the area will now be described fig4 is a diagram briefly illustrating the layout of two ferroelectric capacitors 2 on the bit line bl side that share a lower electrode and two ferroelectric capacitors 2 on the bit line bl side that are located adjacent to the above two ferroelectric capacitors 2 respectively fig5 is a diagram showing a cross section taken along the line v u2014 v indicated in fig4 and fig6 is a diagram showing a cross section taken along the.