a method for fabricating semiconductor devices having a wiring construction consisting of a conductive layer and an insulating layer a method for wiring forming of semiconductor devices of the present invention comprises at least a first step for forming a first insulating material layer on a sample a second step for forming on the first insulating material layer a second insulating material layer with a dielectric constant less than 2 5 a third step for patterning the second insulating material layer by a plasma etching method a fourth step for depositing a metal film on the second insulating material layer by a sputtering method a fifth step for forming a copper layer on the metal film and a sixth step for removing an unnecessary portion of the copper layer by chemical mechanical polishing wherein all the processes from the third to the fourth step are performed under drying process conditions and a pure water treatment for cleaning the sample with pure water is provided after the sixth step the wiring forming method of the present invention can form a good semiconductor device wiring having high reliability application_number US 92083401 A description the present invention will be described in detail hereinbelow by the embodiments with reference to the drawings 0039 fig1 shows.