to create a denuded zone had no cops and a moderate bmd density of 5e8 to 4e9 cc yet high tsv yield in wafers that contain cops and have low bmd density such as substrate c without wishing to be bound by theory it appears that high bmd density formed according to a conventional high temperature anneal can lead to such latent tsv flaws the inventors have discovered that tsv yield can be significantly improved by utilizing a substrate e g fig1 substrate 101 in which throughout the region traversed by a tsv e g fig1 tsv 112 i e the u2018 3d region u2019 extending from the device layer e g fig1 device layer 109 on the front side e g fig1 front side 108 of a wafer to the back side e g fig1 back side 111 exposed after thinning bmd density is within a narrow range of 1e4 1e7 cc and bmd size is less than 55 nm size calculated as the diameter of a sphere having equal volume i e equivalent diameter in embodiments the 3d zone is a region that extends the length of a tsv 112 from a denuded zone 110 to the remote end e g fig1 end 116 of the tsv 112 which could be e g 20 to 100 um below the front side 108 in embodiments about 85 90 of all bmd larger than 10 nm are between 25 and 35 nm in embodiments the substrate need not be free of cops the substrate herein may comprise any conventional or future semiconductor wafer or part thereof with an epitaxial layer formed of e g si sige sigec sic ge alloys gaas inas inp and other iiiiv or ii vi compound semiconductors the substrate can optionally include a bulk.