a second seed layer 114 a copper material 118 or 128 and a capping material 123 depending upon the material of the insulator layer 30 one could dispense with one or more of the seed layers 112 and 114 the first seed layer 112 could be selected from a group comprising chromium titanium titanium tungsten etc however the second seed layer 114 could be selected from a group comprising aluminum copper etc to name a few fig6 illustrates another preferred starting embodiment of this invention on a standard substrate 10 such as a ceramic or a glass ceramic substrate typically a seed layer of chromium 12 is formed next a seed layer of copper 14 is formed over the seed layer of chromium 12 by methods well known in the art a resist stencil is formed over the seed layer of copper 14 using a resist material 16 multiple layers of electrical interconnect 68 are then formed over the upper surface 19 of the seed layer 14 the interconnect layer 68 could comprise of layers 62 64 and 66 illustrated here as an example of course one could have as many layers as the process or the structure would allow it is preferred that the layers 62 64 and 66 are formed by an electroplating process it is obvious that the layers 62 64 66 etc could comprise of the same material or different material the material for the layers 62 64 and 66 could be selected from a group comprising aluminum copper.