cool to room temperature a u2212 500 nm thick pmma film was spun as the sacrificial layer to delaminate the pbttt film the patterned pbttt film is uniform and completely covers the area patterned without ots as the image shown in fig3 b it was intended to pattern pbttt into a rectangular shape with two short edges several micrometers away from the edges of the source drain contacts to minimize the off channel current in the top gate device it can be noticed that the pbttt film was delaminated from the au surfaces in the otstreated areas but not from the au surfaces in the close area patterned without ots it was found that fortuitously pbttt is retained on the pfdt treated au electrodes that are surrounded by relatively large area hydrophilic surfaces finally the top gate devices were finished by spin coating a u2212 500 nm thick pmma film as the gate dielectric and evaporating a 40 nm thick aluminum top gate electrode the deposition and delamination of pbttt and pmma films were performed in a nitrogen atmosphere to avoid degradation of pbttt and contamination of the pbtttipmma interface induced by oxygen exposure the polymer pbttt c14 was synthesized with a number average molecular mass mn of 28 000 g mol and polydispersity of 2 0 for pbttt top gate devices the bottom contact au electrodes were patterned by conventional photolithography with 3 mercaptopropyltrimethoxysilane as an adhesion layer between the corning 7059 glass substrate and au electrodes an octyltrichlorosilane ots layer.