also removed in fig1 seed layer 20 is deposited on both sides of substrate 4 seed layer 20 can be for example copper gold au or any other suitable material to form conductors 10 in one embodiment seed layer 20 can be between approximately 200 u00e5 to approximately 3000 u00e5 in another embodiment seed layer 20 is approximately 1000 u00e5 in fig1 photoresist 22 is layered on both sides of substrate 4 the layer of photoresist 22 on a first side of substrate 4 is patterned with holes where conductors 10 are formed in fig1 metal 26 is deposited in the holes created during the patterning of photoresist 22 on the first side of substrate 4 metal 26 can be deposited in the holes created during the patterning of photoresist 22 for example through electroplating in fig1 the layer of photoresist 22 that was patterned in fig1 is overlayed with photoresist covering up the holes the layer of photoresist 22 on the second side of substrate 4 is now patterned with holes where conductors 10 will be formed in fig1 metal 26 is filled in the holes of the layer of photoresist 22 on the second side of substrate 4 in fig1 the layers of photoresist 22 and seed layer.