solder mask 450 serves to protect the fourth electrically conductive patterns 440 d from the external impact however the solder mask 450 does not cover the bonding pads 460 that is the bonding pads 460 are exposed to outside through the openings 451 referring to fig4 a through fig4 f sectional views showing a fabrication method of the semiconductor device according to another embodiment of the present invention is illustrated as shown in the drawings the fabrication method of the semiconductor device includes a multi layer forming operation a solder mask printing operation a solder mask exposing developing operation a photo sensitive film providing operation a plating operation and a photo sensitive film eliminating operation as shown in fig4 a in the multi layer forming operation the first dielectric layer 420 a having the first electrically conductive patterns 440 a and conductive lands 430 the second dielectric layer 420 b having the second electrically conductive patterns 440 b the third dielectric layer 420 c having the third electrically conductive patterns 440 c and the fourth dielectric layer 420 d having the fourth electrically conductive patterns 440 d are laminated on the carrier 410 in order here the number of the layer may be less than 4 or more than 5 however the present invention is not limited to the number of the layer as shown in fig4.