are eventually to be formed with the photoresist layer 34 in place a photolithographic process is performed at step 36 an exposure step is performed followed by a development step 38 at step 36 a light source emits light 40 of a prescribed wavelength a typical wavelength is between 248 nm and 436 nm although shorter wavelengths down to 150 nm and longer wavelengths beyond 436 nm also are encompassed by this invention referring to fig3 the light waves 40 travel through a mask 42 which emits light of differing dosage at different regions 56 58 60 as a result light at a first dosage d 1 impinges upon one or more first areas 44 of the photoresist layer 34 while light at a second dosage d 2 impinges upon one or more second areas 46 of the photoresist layer 34 at step 36 the first and second areas 44 46 are concurrently developed to partially remove photoresist 34 the development step 38 causes photoresist 34 to be removed down to a first depth 62 within the first areas 44 and down to a second depth 64 within the second area s 46 fig4 preferably the dosage d 1 does not equal dosage d 2 for an embodiment in which the dosage d 2 gt d 1 the second depth 64 is greater than the first depth 62 in the embodiment shown in fig4 the second depth 64 is entirely through the photoresist layer 34 exposing the underlying insulating layer 16 also in the embodiment see fig3 shown there are two first areas 44 surrounding a second area 46 once developed there.