through palladium was used as a gas carrier the growth processes were performed at total pressures of 100 torr and 300 torr and total flow of 2 liters min high total flow velocity was used to increase compositional homogeneity of the gas flow the epilayers were grown at 300 u00b0 c at a growth rate of about 1 u03bcm h fig1 is a schematic illustration of the electrical contacts 110 on the cdzns film surface 120 constructed in accordance with the principles of the present invention the electrical resistance was measured using two contacts 110 evaporated on cdzns surface 120 surface 120 is shown in a side view 130 and an orthogonal top view 140 the configuration of the contacts allowed the measurement of the square sheet resistance ti al or ti au were used as the contact materials r t r 0 exp u2212 e a kt 1 maximum possible activation energy e a is equal to e gap 2 e a for single crystalline material is equal to e gap 2 where e gap is the band gap energy for polycrystalline materials such as cd 1 x zn x s the additional delta e a related to grain boundary barrier height is present actual activation energy for the material includes the energy of the donor level plus the energy of the grain boundary barrier the resistance and tcr data of mocvd deposited films are summarized in table 1 herein below the temperature dependence of the resistance showed typical semiconductor behavior referring now to fig2 below from the temperature dependence of r the activation energy and tcr were calculated according to formula 1 above the sheet resistance varies non linearly with the film thickness evidently due to quantum effects.