second semiconductor material 110 in series on the semi polar planes 120 a and 120 b of the first semiconductor material 108 in the illustrated embodiment the active region 112 includes an ingan gan mqw deposited on the first semiconductor material 108 and the second semiconductor material 110 includes a p type gan material e g magnesium doped deposited on the active region material the active region 112 and second semiconductor material 110 can be deposited using mocvd mbe lpe hvpe and or other suitable techniques in other embodiments the process can also include forming a mirror layer e g aluminum not shown and a support structure e g a silicon and or silicon oxide material not shown on the led structure 104 fig5 a and 5b are perspective views of a portion of a microelectronic substrate 102 undergoing a process of forming the ssl device 100 in fig3 a and 3c in accordance with embodiments of the technology as shown in fig5 a the process can include blanket depositing a foundation material 130 on the first surface 102 a of the microelectronic substrate 102 shown in fig5 a with the optional support material 103 in one embodiment the foundation material 130.