then be removed 1006 as well as the poly layer in the monitor pad 1100 a metal gate mg and aluminum filler layer may be deposited to fill in the trenches and a metal cmp process may be performed it should be noted that there is no metal residue remaining on the silicon substrate referring now to fig1 illustrated are a plurality of monitor pads e g pad 1 pad 2 pad 31 pad 32 that have dummy poly gate structures surrounding the monitor pads the dummy poly structures 1200 may include a plurality of rectangles in an area measuring about 50 um by 10 um l u00d7 w it has been observed that by placing the dummy poly structures around the monitor pads a dishing effect of a cmp process during a gate last process may be reduced to a minimum the dummy poly structures may act as polishing stoppers as was discussed above thus the integrity of the monitor pads may be maintained for their intended function it should be noted that the dummy poly structures 1200 may be formed in the same process stage that forms the dummy poly gates of the nmos and pmos devices logic device or memory device in another region away from the monitor pads thus no extra masks are.