i p n structure the energy band diagram of the thyristor like semiconductor switch at equilibrium condition is given in fig3 b on the other hand fig3 c shows the energy band diagram of the thyristor like semiconductor switch under the normal forward biased operation condition as shown in fig3 c under the normal forward biased operation condition junctions j1 created by the highly doped p1 and n1 layers and j3 created by the highly doped p2 and n2 layers become forward biased p n junctions thus the most of the biased voltage drops across the center n i p diode therefore during the pulse biasing period the region n1 i p2 n i p diode acts as a blocking diode when the triggering light pulse is introduced into this thyristor like p n i p n structured switch electron hole pairs are generated at the inside blocking n i p diode these photon generated electron hole pairs will be separated by the electric field giving rise to a photocurrent the photocurrent instantly increases the conductivity of the i region so that the voltage across the i layer is drastically reduced and is transferred to the p1 n1 and p2 n2 junctions the carrier injection from the p1 n1 and p2 n junctions helps the turn on of the switch the action of the driver starts by forwarding the operating instruction to the control unit 100 which initiates sequence of actions at first the electric power conditioning and pulse charging unit 200 is activated the prime power from.