step includes incorporating a third nozzle into the system and positioning it such that it is directed at the center of a wafer held in the coating system at process block 420 a wafer is mounted in the coating system next process block 430 solvent is dispensed through the third nozzle onto the wafer the wafer is then spun at process block 440 to partially dry the solvent and spread it over the surface of the wafer in one embodiment a solvent comprising diacetone alcohol is used this solvent has a slower rate of evaporation and therefore provides wider processing latitudes for example more time is available to bring the wafer up to the correct spin speed and to ensure complete wafer coverage those skilled in the art will recognize that other solvent materials may be used in the implementation of the present invention without exceeding its scope and spirit once this wafer prewet process is complete photoresist is dispensed onto the wafer at process block 450 the wafer is again brought to spin velocity at process block 460 this distributes the resist over the wafer surface in the embodiment described the solvent coating the wafer reduces friction and allows the resist to spread more quickly and evenly another effect of the lowered resistance is less resist material needs to be dispensed to acheive adequate wafer coverage resist material is made up of three primary parts u2014 resin photoactive compound and solvent in one embodiment the solvent component is the same diacetone alcohol resist used in the prewet step 430 this provides at least two advantages first using the same resist material in both the prewet and resist.