21 to 23 on the n type high concentration drain region 8 d a resistance of the region 13 d between the adjacent drain regions is high this can prevent a current from flowing between the adjacent transistors e g prevent a current flowing between the drain contact 10 d1 and the source contact 10 s1 from flowing between the drain contact 10 d2 and the source contact 10 s2 accordingly the transistors 21 to 23 are not isolated from one another by the element isolation regions 2 so that local curtent concentration can be prevented without increasing an area of the electrostatic discharge protected transistor since a drain region is higher in electric field than a source region current concentration tends to occur to the drain region more frequently than the source region for this reason the on drain silicide films 5 d 5 d1 5 d2 and 5 d3 are formed for the respective transistors 21 to 23 and the common on source silicide film 5 s is provided to be shared among the transistors 21 to 23 a method for manufacturing the semiconductor device according to this embodiment will next be described briefly first the element isolation region 2 the gate insulating film 3 the gate electrode 4 and the n type low concentration diffused layers 6 are formed using a well known technique an oxide film having a thickness of 50 nm for formation of a sidewall is then formed on the substrate 1 and n type impurities such as arsenic as or phosphorus.