about 2 3 mm the nozzle openings 97 in the adjacent slurry dispensing bars 95 span an area above the polishing belt 91 that approximates the diameter of the wafer 94 in an alternative embodiment shown in fig6 a single slurry dispensing bar 99 replaces the two adjacent slurry dispensing bars 95 shown in fig4 and 5 adjacent nozzle openings 100 in the slurry dispensing bar 99 are disposed at a spacing u201c b u201d of less than about 30 mm with respect to each other in application the linear cmp apparatus 90 is typically used to polish a wafer 94 in low k imd local copper interconnection applications for fabrication of device features on the order of 0 13 u03bcm and smaller and utilizes a polishing slurry 98 containing little typically less than about 1 by weight or no abrasive particles while the wafer 94 typically has a diameter of 300 mm it is understood that the present invention may be adapted for wafers having other diameters or widths the wafer holder 92 rotates the wafer 94 against the polishing belt 91 as indicated by the arrow 88 as the wafer holder 92 presses the wafer 94 against the polishing belt 91 and the polishing belt 91 is driven in a linear direction as indicated by the arrow 89 simultaneously the polishing slurry 98 is dispensed from the adjacent slurry dispensing bars 95 through the nozzle openings 97 of the respective nozzles 96 and onto the moving polishing belt 91 because it is dispensed onto the polishing belt 91 in adjacent slurry lines across a polishing area on the polishing belt 91 that substantially encompasses the diameter of the wafer 94 the polishing slurry 98 travels with the polishing belt 91 and then contacts the surface of.