penetrate a thin 50 nm chromium film was used as an adhesion layer and 200 nm of gold film was used as a uv masking layer 4330 fig1 d traditional electrolytes cause damage to the passivation layer a new organic electrolyte was developed where hf was dissolved in dmf dimethyl formamide to form a 5 wt solution this solution reduces the h concentration of this solution is reduced the solution is insulating tbap tetra butyl ammonium percolate is added to the solution to make it conducting the result is a cps etching electrolyte with virtually no attack rate of sin calculated to be 1 5 2 a min this electrolyte had very low etch rates using traditional etching systems an agitation system was built to solve the etch rate problem as shown in fig1 the sonotrode 4100 utilizes external energy for example ultrasonic waves to dislodge hydrogen bubbles from the capillaries and aid in mass transport within the cell the combination of thin film electrolyte and agitation mechanism generated etch rates of u02dc 1 2 a min for the passivation film while etching silicon at u02dc 1 3 micons min a selectivity ratio of nearly 10 000 to 1 using the above methods cps microarrays have been created as shown in fig1 in order to realize the type of unit cell configuration depicted in fig4 a a microbond must be formed between the top cap 114 and the cps wick 109 due to constraints of surface roughness and maximum bonding temperature of 600 u00b0 c a novel bonding.