the absorption may still be wide enough to significantly reduce ag reflectance for wavelengths of around 460 nm the p type electrode e g ag electrode may be deposited on the p type gan based layer by a physical e g electron beam or thermal evaporation process and ag will conform to the p type gan based layer surface without voids if the deposition is performed properly the roughness of the p type gan based layer ag interface is determined by the quality of the p type gan based layer the presence of voids created during the deposition process or contact annealing process however may increase the interface roughness and further enhance the sp absorption to achieve a high reflectance value at the p type gan layer ag electrode interface an led device is provided in which the p type gan based layer has a root mean square rms roughness less than about 3 nm to ensure appropriate smoothness of the p type gan based layer ag electrode interface and to thereby minimize the sp absorption in a variation a method for manufacturing the p type gan based layer with a smooth surface is provided such that the sp absorption can be reduced to.