portion 50 p has a resolution and feature sizes of the optical lithography referring to fig3 f a first etch is performed to etch exposed portions of the carbon based material layer 30 to form a patterned carbon based material layer 30 p preferably the surfaces of the underlying layer 10 are exposed at the bottom of at least one trench formed in the patterned carbon based material layer 30 p a set of the exposed at least one inorganic electron beam sensitive oxide portion 40 e and the at least one patterned optical resist portion 50 p is employed as an etch mask during the first etch preferably the first etch is a reactive ion etch other etches such as a wet etch and a chemical dry etch cde are also contemplated herein the pattern of the at least one trench in the patterned carbon based material layer 30 p match the pattern of the collective set as seen from above in a top down view not shown comprising the exposed at least one inorganic electron beam sensitive oxide portion 40 e and the at least one patterned optical resist portion 50 p the simultaneous transfer of the pattern in the exposed at least one inorganic electron beam sensitive oxide portion 40 e and the pattern in the at least one patterned optical resist portion 50 p is herein referred.