exposure region having the rectangular shape is patterned to have a width of 0 1 u02dc 0 15 u03bcm and the length of the short side of the exposure region is patterned to have a width of 0 35 u02dc 0 45 u03bcm at this time the transmission range of light that is phase inverted in the long side direction can be controlled by the light shielding film 314 formed in the long side peripheral region in other words the interference effect of light generated by the phase reverse film 312 at both end regions of the exposure region 316 can be controlled by adjusting the width of the light shielding film 314 formed in the long side peripheral region also the shape of the photosensitive film pattern that will be formed on a base layer by a photo lithography process to be described later may be controlled by adjusting the interference effect of light in details the phase reverse films 312 are formed at the center see u2018 e u2019 region in fig3 b on the basis of the center of the long side peripheral region and the light shielding films 314 are formed at both sides see u2018 d u2019 region in fig3 b of the long side peripheral region at this time the phase reverse films 312 may be formed at the region of 10 u02dc 100 of the entire the long side peripheral region and the light shielding films 314 may be formed at the region of 0 u02dc 90 of the entire long side peripheral region preferably the long side peripheral region may be symmetrically extended on the basis of the long side also in case that the shape of the isolated.