values increasing the drive current of the source strap cells or lowering the source strap cell 39 s threshold voltage relative to the other memory cells may be done by conventional methods such as gate doping gate material change modified gate oxide thickness changing the oxide material or dielectric constant changing interfacial charge bulk doping level surface doping level or even by making geometrical changes like widening the cells putting more cells in parallel increasing source cell mobility by stress implant or other means as another alternative the source cell gate oxide may be removed below the poly 1 or an oxide nitride oxide ono layer turning to fig7 a portion of a system 500 in accordance with an embodiment of the present invention is described system 500 may be used in wireless devices such as for example a personal digital assistant pda a laptop or portable computer with wireless capability a web tablet a wireless telephone a pager an instant messaging device a digital music player a digital camera or other devices that may be adapted to transmit and or receive information wirelessly system 500 may be used in any of the following systems a wireless local area network wlan system a wireless personal area network wpan system or a cellular network although the scope of the present invention is not limited.