operation referring now to fig3 there is depicted an exemplary die structure 304 depicted in vertical cross section of a wafer having structures formed and etched as described above structure 304 comprises first metal line 303 with low melting point dielectric 302 and photoresist 301 thereover structures 308 and 312 including metal lines 307 and 311 are constructed in a fashion identical to structure 304 ie sections 305 and 309 are photoresist and sections 306 and 310 are low melt ing point dielectric note also that metal lines 303 and 307 are relatively closely spaced yet separated by void 313 in accord with the current method photoresist sections 301 305 309 are removed by conventional processes and the wafer is subjected to a heat cycle depending upon the nature of the dielectric sections 302 306 an optimum temperature and time may be determined at which dielectric section 302 will sag and approach or meet sagging dielectric section 306 but neither should flow the resulting structure will resemble the cross sectional sample shown in fig4 due to the heat cycle structures 304 and 308 are now capped by sagging dielectric sections 302 and 306 respectively furthermore the sagging dielectric sections 302 and 306 have substantially encapsulated void 313 moreover even if there is not a perfect seal between sagging dielectric 302 and 306 a seal will be made when the metal level wafer is passivated or insulated with additional dielectric material some attention should be given to use a.