be construed narrowly to limit an epitaxially grown structure to si or sige for example but rather the term u201c epitaxial silicon compounds u201d is broadly construed to cover any compounds that can be grown epitaxially from a crystalline silicon surface reference throughout the specification to conventional thin film deposition techniques for depositing silicon nitride silicon dioxide metals or similar materials include such processes as chemical vapor deposition cvd low pressure chemical vapor deposition lpcvd metal organic chemical vapor deposition mocvd plasma enhanced chemical vapor deposition pecvd plasma vapor deposition pvd atomic layer deposition ald molecular beam epitaxy mbe electroplating electro less plating and the like specific embodiments are described herein with reference to examples of such processes however the present disclosure and the reference to certain deposition techniques should not be limited to those described for example in some circumstances a description that references cvd may alternatively be done using pvd or a description that specifies electroplating may alternatively be accomplished using electro less plating furthermore reference to conventional techniques of thin film formation may include growing a film in situ for example in some embodiments controlled growth of an oxide to a desired thickness can be achieved by exposing a silicon surface to oxygen gas or to moisture in a heated chamber reference throughout the specification to conventional photolithography techniques known in the art of semiconductor fabrication for patterning various thin films includes a spin expose develop process sequence involving a photoresist such a photolithography sequence entails spinning on the photoresist exposing areas of the photoresist to ultraviolet light through a patterned mask and developing away exposed or alternatively unexposed areas of the photoresist thereby transferring.