with a reference digital image stored in the memory 109 and identifies a difference found in the comparison as a candidate defect 40 a candidate defect memory part 41 is provided for storing feature quantity data 203 of each candidate defect 40 such as coordinate data projection length data and shape data a feature quantity check part 251 is provided in which feature quantity data 203 of each candidate defect 40 is received from the candidate defect memory part 41 and it is checked to see whether the candidate defect 40 meets prespecified feature quantity data 250 a detail image processing part 252 is provided in which under an image processing condition 201 specified for each feature quantity data a judgment for determining each pattern defect 11 is formed on the candidate defect 40 that has proved to meet the prespecified feature quantity data 250 as determined by the feature quantity data check part 251 and a general control part 110 receives data of each pattern defect 11 from the detail image processing part 252 control lines from the general control part 110 are not shown in fig1 an operation display 45 is provided on which data of pattern defects 11 is displayed an image of a selected pattern defect 11 is displayed and the image processing region 200 is displayed or edited still further the electron beam pattern inspection apparatus comprises a keyboard a mouse and a knob not shown for operathen and control a z sensor 113 for measuring the height level of each wafer 31 to maintain a focal.