two electrodes conforms to the shape of the first trench but leaves a part of the first trench unfilled a material capable of absorbing stresses associated with the displacements of the walls of the trench is placed in the trench to fill the part of the first trench a second trench is formed at least partly surrounding the first trench this second trench is also at least partly filled with a material capable of absorbing stresses associated with the displacements of the walls of the second trench a void may be included in the stress absorbing material which fills either of the first or second trenches application_number US 41539306 A description 28 fig1 to 13 are cross sectional views of the integrated circuit at various steps in the process for forming the capacitor according to the invention fig1 shows a layer 1 which may be made of silicon glass sio 2 or any other insulating material the layer 1 is typically a substrate with a planar upper surface 1 a a rectangular trench 2 is etched into the layer 1 for example by dry fluorine etching the trench 2 has a bottom 2 a parallel to the planar upper surface 1 a of the layer 1 and also parallel edges 2 b and 2 c of length generally greater than that of the bottom 2 a the depth of the trench 2 is generally between 1 and 200 u03bcm for example it is possible to form trenches with a depth of between 1 and 10 u03bcm in an interconnect region or a depth of between 10 and 100 u03bcm in a substrate next.