on current thereby obtaining the on current ratios u03b4ion the on current ratios u03b4ion are listed in the columns of the matrix table next the distance cr indicating the position of each of the floating contacts is set to a fixed value the number of floating contacts is changed cw w is changed to measure the on current thereby obtaining the on current ratios u03b4ion the on current ratios u03b4ion are listed in the rows of the matrix table a value of the on current ratio u03b4ion based on the contact position and the number of contacts in the matrix table is obtained from the row column relationship that is the on current ratio u03b4ion for each of points in the matrix table can be obtained without measuring on currents for all the points therein the analyses on the on current ratio u03b4ion are described above the method for the analyses can be also applied to the case of a threshold voltage vth the analyses on the threshold voltage vth are performed based on a difference u03b4vth between the threshold voltage vth in the case where the floating contacts are not provided and the threshold voltage vth in the case of an arbitrary contact position and the arbitrary number of contacts as described above the floating contacts different from the source and the drain between which a current flows are provided in the teg layout pattern to separate diffusion layer resistance components from the influence of stress caused by contact the measurement contacts 15 and 16 for connecting the source and the drain with the metal layers are provided in the predetermined positions without depending on the gate length.