subsequent steps it is deposited at room temperature and allows use of a resist mask to inverse pattern the film under a lift off process known in the art the lift off process lifts off the resist and the film in predetermined areas because the resist prevents adherence to the substrate after application of acetone dissolves the resist and lifts off the unwanted oxide nitride film a stack comprising of the oxide cap 614 and the nitride cap 616 remains in an alternative embodiment process not shown the stack can be deposited on a planar surface not necessarily in shallow wells 610 as shown in fig3 the reason for depositing on a shallow well instead of a planar surface is to allow space for a depletion region of suitable thickness to be formed in the oppositely doped epitaxial growth that will later occupy this space or cavity in this junction isolated embodiment a deep trench is now formed which becomes the hinge of the accelerometer specifically as seen in fig3 the lpcvd nitride 612 has been patterned with a hinge well 618 using resist and plasma etching the former process is preferable because the underlying surface is not needed and can be etched away after.