accordance with one embodiment of the present invention the via 306 1 is filled with a type b material and the via 306 2 is filled with a type a material for example the via 306 1 may be filled with a p type metal or semiconductor whereas the via 306 2 may be filled with an n type metal or semiconductor in one embodiment the material that is used to fill the vias 306 1 and 306 2 may be preformed into cylindrical pins that are inserted into the vias 306 1 and 306 2 in fig3 of the drawings a cylindrical pin 310 of a p type metal semiconductor is inserted into the via 306 1 and a cyclindrical pin 312 of an n type metal semiconductor material is inserted into the via 306 2 in one embodiment gaps between the pins 310 312 and an inner wall of the vias 306 1 and 306 2 respectively are filled with a plugging material such as resin in order to secure the pins 310 312 in their respective vias the pins 310 and 312 are fabricated of materials that have a high peltier coefficient for example in one embodiment the pin 310 is fabricated of a bismuth telluride selenium bitese compound and the pin 312 is fabricated of a bismuth telluride antimony bitesb compound the pins may be formed by a grinding crushing process to mix the materials of the compound followed by a hot isostatic press process for sintering referring again to fig3 of the drawings it.