above 450 u00b0 c or 550 u00b0 c and optimization of the process higher crystal growth rates are expected such as 30 50 pm hr this particular experiment used a capsule geometry which differs from that shown in fig1 in that the seed was on the bottom nevertheless the solubility increased with temperature and the bottom was cooler than the top higher crystal growth rates are expected such as 30 50 pm hr when the process is used with higher temperatures e g above 500 u00b0 c despite the very high purity and crystalline quality of cdznsete crystals grown by the present method the presence of low concentrations of adventitious impurities and native defects such as vacancies and interstitials may render unintentionally doped crystals conductive which is undesirable for many radiation detector applications this undesirable electrical conductivity may be greatly reduced by adding at least one compensatory dopant to the cdznsete crystals for example at least one of cl ge sn in b al ga tl c si pb n p as sb bi f br i a transition metal a rare earth metal or h may be incorporated other impurities for example be mg ca sr ba o or s may be added to modify the bandgap of the cdznsete crystals the at least one dopant or impurity may be introduced as an impurity in the nutrient material or as a component of the solvent or the mineralizer in the case where the dopant is incorporated into the nutrient material the nutrient is preferably melted and.