process referring to fig5 second offset spacers 23 are formed adjacent to the first offset spacers 22 using conventional deposition and etch process steps well known within the skill of the art the second offset spacers 23 act as an independent adjustment to compensate for second device region 2 processing the second dopant impurity regions 18 are preferably formed utilizing boron as an implant species boron has a higher diffusivity than arsenic which typically forms the first dopant impurity regions 19 therefore the second offset spacers 23 may be incorporated to compensate for the difference in diffusion rates between the implant species in the second dopant impurity regions 18 and first dopant impurity regions 19 a second conformal layer of photoresist is then deposited and patterned to form another device region block mask 35 as depicted in fig6 block mask 35 is formed in a similar manner to block mask 34 described above following the formation of the first device region block mask 35 pfet dopant impurity regions 18 are formed by doping 50 the raised source drain regions 21 in the second device region 2 of the device by implant the second device region 2 may be implanted to form a pfet or nfet device pfet devices are produced within si containing materials by doping with group iii a elements nfet devices are produced within si containing substrates by doping the substrate with group v elements in a preferred embodiment the second dopant impurity regions 18 are formed by implanting boron into the raised source drain regions 21 the boron is implanted using an angle of 7 to 45 degrees with an energy of about 0 2 kev to about 7 0 kev with a dose of about 5 u00d7.