310 b as the eutectic alloy the eutectic bonding has an excellent bonding strength and dose not require a step of coating an adhesive material as mentioned above the first and second electrodes 150 and 160 of the led chip 100 are electrically connected by the eutectic bonding to the first and second lead frames 250 a and 250 b namely the led chip 100 has a flip chip bonding structure on the lead frame 250 since the led chip 100 receives power from an exterior current supplying unit through the lead frame 250 without the wire 70 of fig1 the open defect on the wire is avoided in addition a decrease in luminance efficiency caused by the wire is also avoided furthermore since a bonding process for example a soldering process for connecting the wires to the led chip is not required processing yield is improved moreover since the material having a high heat transfer property e g au sn is used for the first and second electrodes a thermal damage on the led package is further decreased the led package 200 further includes an insulating pattern 320 between the first and second lead frame 250 a and 250 b the insulating pattern 320 has a thickness greater than the first and second lead frame 250 a and 250 b such that an electrical short between the first and second electrodes 150 and 160 is prevented namely an end of the insulating pattern 320 is disposed between the first and second electrodes 150 and 160 to serve as a wall for example the insulating pattern 320 may be formed of at least one of sio 2 si.