memory writing process aligns the magnetic moments while the memory reading process detects the alignment data is read from a memory cell by determining the orientation of the magnetic moments in the two layers of magnetic material in the cell passing a small electric current directly through the memory cell accomplishes this when the moments are parallel the resistance of the memory cell is smaller than when the moments are not parallel even though there is an insulating layer between the magnetic layers the insulating layer is so thin that electrons can u201c tunnel u201d through the insulating layer from one magnetic layer to the other to write to an mram cell currents pass through wires close to but not connected to the magnetic cell because any current through a wire generates a magnetic field this field can change the direction of the magnetic moment of the magnetic material in the magnetic cell the arrangement of the wires and cells is called a cross point architecture the magnetic junctions are set up along the intersection points of a grid word lines run in parallel on one side of the magnetic cells bit lines runs on a side of the magnetic cells opposite the word lines the bit lines are perpendicular to the set of word lines below like coordinates on a map choosing one particular.