in vertical columns in order to avoid slowing down the high throughput process after annealing the i alp with p si surface beneath could receive a shallow implant of si as the n dopant to form the needed n surface on i alp in order to support the formation of cqd for ir photoelectron harvesting the fabrication tool shown in fig5 depicts the following features of the invention station 1 200 mm p silicon wafers at 500 u03bc thick covered with an aluminum foil of 4 u03bc thick can be placed station 2 graphic powder mixed with red phosphorous can be added station 3 first heating chamber the wafer can enter an oxygen free chamber at 300 u00b0 c where the red phosphorous will undergo a phase transition to become white phosphorous with vapor pressure that reacts with the aluminum foil beneath to form alp which is stable up to 2 500 u00b0 c station 4 5 rapid thermal pulse rtp raises the surface of si wafer to nearly 900 u00b0 c and melts the remaining al into the p si substrate to become the additional p dopant while allowing the self limiting layer of alp to firmly attach to the p si station 6 annealing chamber maintained at 900 u00b0 c since the annealing activities even at 900 u00b0 c will need some time to conclude the wafer can enter a vertical motion ascending one by one and transfer at top to chamber 6 for cooling station 7 8 the cooling chamber wafers cool.