the cell field the floating zones 5 u2032 and the intermediate zones 4 u2032 are dimensioned such that their charge carriers are completely cleared with the application of blocking voltage the zones 5 u2032 which are designed lightly p doped in the present exemplary embodiment are u201c floating u201d i e they have an undefined potential the floating zones 5 u2032 are positioned at a distance from each other whereby the region between the floating zones 5 u2032 defines an intermediate zone 4 u2032 this intermediate zone 4 u2032 typically has the same doping concentration as the doping in the zones 4 within the cell field 0088 fig9 a b and c depict different variations of the widths of the floating zones compared to the basic widths in the cell field fig1 a b and c depict the same thing with the strip edge structure layout and fig1 with a hexagonal edge structure layout 0089 fig1 and fig1 depict the n channel mos transistor known from fig4 which has been expanded by an intrinsically compensated edge termination the transistor is built in known fashion with an n conductive silicon semiconductor substrate 1 a drain electrode 2 a first n conducting layer 13 a second layer with n conducting areas 4 and p conductive areas 5.