layer 44 in the gap 42 is remained as shown in fig9 removing the dielectric layer 44 from the surface of the substrate 12 exposes the conductive layer 28 consisting of polysilicon in the contrary the conductive layer 24 and the conductive layer 38 consisting of titanium nitride is not exposed since the dielectric layer 44 remaining in the gap 42 covers the conductive layer 24 and the conductive layer 38 referring to fig1 a conductive layer 46 is deposited on the surface of the substrate 12 to electrically connect the conductive layer 28 wherein the conductive layer 44 is made of titanium nitride a dielectric layer 48 is then deposited on the conductive layer 44 to complete the stacked capacitor 10 as shown in fig1 the stacked capacitor 10 comprises an upper interdigital electrode 70 a lower interdigital electrode 60 and a dielectric material sandwiched between the upper interdigital electrode 70 and the lower interdigital electrode 60 the upper interdigital electrode 70 consists of the conductive layer 44 and the conductive layer 28 the lower interdigital electrode 60 consists of the conductive layer 38 and the conductive layer 24 and the dielectric material consists of the dielectric layer 26 the dielectric layer 32 the dielectric layer 34 and the dielectric layer 40 preferably the dielectric material sandwiched between the upper interdigital electrode 70 and the lower interdigital electrode 60 has a.