and block 90 in fig4 b a blanket titanium contact layer 122 was formed over device 10 39 reaching down into contact opening 20 39 composed of titanium the titanium contact layer 122 is formed on the top surface of device 10 39 by the process of sputtered deposition at from about 250 u00b0 c to about 450 u00b0 c the next step in block 91 in fig4 b as shown in fig3 d is to perform a rapid thermal anneal by heating device 10 39 to a temperature from about 750 u00b0 c to about 850 u00b0 c for a time from about 30 seconds to about 60 seconds yielding titanium silicide layer 122a in a salicide process at the base of contact opening 20 39 only where the titanium layer 122 comes into contact with silicon in particular the only part of the titanium layer 122 which is converted to titanium silicide 122a are the portions of titanium layer 122 in contact with the polysilicon interconnect contact layer 14x or the u03b1 si layer 18 the remainder of layer 122 remains titanium because it is isolated from sources of silicon then the next step described in block 92 in fig4 b as shown in fig3 e was to selectively etch away the remaining titanium layer 122 above silicon oxide cap layer 20 and above titanium silicide 122a so that the titanium silicide region 122a remains at the base of interconnect contact opening 20 39 above polysilicon interconnect contact layer 14x but the unconverted remainder of the titanium layer 122 is removed the titanium silicide 122a which remains in fig3 e 3i connects the top surface of interconnect 14x and the walls of the first u03b1 si layer 18 formed by contact.