an integrated circuit including an extra long air bridge consistent with the present invention the method as shown in fig1 a cross sectional view begins with a known integrated circuit assembly or structure 10 which may reside within any integrated circuit for example an otherwise conventional integrated memory circuit assembly 10 includes a substrate 12 which supports a number of integrated elements 14 particularly transistors 14 a and 14 b transistors 14 a and 14 b are covered by a 100 nanometer thick insulative layer 16 which for example consists of a silicon oxide nitride or oxynitride layer 16 includes two tungsten vias or contact plugs 16 a and 16 b electrically connected to respective transistors 14 a and 14 b although omitted from fig1 5 for clarity assembly 10 in some embodiments includes a titanium nitride tin diffusion barrier between vias 16 a and 16 b and transistors 14 a and 14 b transistors 14 a and 14 b and corresponding vias 16 a and 16 b are separated by a distance 15 of 1 4 millimeters which is approximately 40 percent longer than the one millimeter maximum free span length of conventional aluminum alloy air bridges assuming a 500 nanometer thickness and a maximum allowable sag of 250 nanometers one of skill in the art however understands that using different thicknesses maximum allowable sags and or breaking point constraints would provide other maximum free span lengths both greater and less.