first source line sl 1 and the p well pw are grounded the first bit line bl 1 may be 0 volts or floating the second bit line bl 2 may be 0 volts or floating the erase voltage vee may be in a range from 5 volts to 20 volts in this way the electrons that were injected into the floating gate 200 may be ejected from the floating gate 200 in a third programming mode pgm 3 the control line cl voltage may be in a range from 5 volts to 12 volts the word line wl voltage may be in a range from 5 volts to 8 volts the second source line sl 2 voltage may be floating and the n well nw voltage may be 5 volts to 8 volts the first bit line bl 1 voltage the first source line voltage sl 1 the p well pw voltage and the second bit line bl 2 voltage may be grounded e g 0 volts the first bit line bl 1 may also be floating in such a programming configuration band to band tunneling induced hot electron bbhe injection may occur at the pmos transistor 320 during an erase operation fowler nordheim fn electron tunneling ejection may occur at the pmos.