72 on the pad 62 in fig8 e a ubm 18 with a thickness of 800 u00e5 is deposited on the contact surface 72 on the pad 62 and the planarized surface 82 of the film 80 by sputtering titanium and tungsten for example a gold film 20 is deposited on the ubm 18 thereafter by sputtering as shown in fig8 f the gold film 20 and ubm 18 are patterned to define the bumps and in fig8 g a gold bump 66 is grown up from the gold film 20 for 15 to 20 u03bcm by electro plating since the passivation layer 76 and 80 has planarized surface the central concavity 68 on the top surface of the bump 66 is very small or even none and most of the top surface of the bump 66 is a planarized region 70 fig9 a to 9 d show another bumping process according to the present invention in fig9 a deposited films 76 and 80 cover pads 62 on a substrate 12 in which the film 80 is preferably harder than the film 76 the softer film 76 is used to protect the surfaces of the substrate 12 and pad 62 and the harder film 80 is used against force for example the film 76 comprises silicon dioxide or silicon oxide with a thickness of 200 to 800 u00e5 and the film 80 comprises silicon nitride or silicon oxy nitride with a thickness of 300 to 500 u00e5 in fig9 b the films 76 and 80 are etched back by for example cmp to leave them a total.