patterned over the location where mems switch 22 is to be placed a sacrificial layer of 3 u03bcm thick polyimide dupont pi2545 is then spun cast soft baked and patterned to define anchor points 38 for mems switch 22 see fig2 for anchor points to define the structure of mems switch 22 2 u03bcm of ni is electroplated upon bottom wafer 22 furthermore 4 u03bcm of ni is selectively electroplated on the switch actuation pads sacrificial etching of the 3 u03bcm thick polyimide layer and supercritical co 2 drying and release of mems switch 22 is performed mems switch 22 is shown in fig3 where a scanning electron image of mems switch 22 and the rf interconnect is presented cavity 28 is then etched on top wafer 12 the fabrication process steps are similar to the steps set forth above that is a a lift off process is used for the metallization of cr au 500 9500 u00e5 to fabricate a square metallic rim on underside 32 a of top wafer 12 b sio 2 is patterned on both sides of top wafer 12 using infrared ir alignment to define cavities and probe windows for the final alignment of top wafer 12 and bottom wafer 14 prior to bonding c sio 2 is then etched partially or fully in buffered hydrofluoric acid bhf at a rate of 1000 u00e5 min and finally d the oxide patterned cavities and probe windows are anisotropically etched in potassium hydroxide koh at a rate of 30 u00e5 hour thermocompression bonding of top wafer 12 and bottom wafer 14 is performed with an electronic visions ev 501 manual wafer bonder initially top wafer 12 and bottom wafer 14 are cleaned with organic solvents in order to.