between the halogen doped silicon oxide film and the barrier layer furthermore the hydrogen plasma treatment can be practiced in a variety of plasma processing chambers of an integrated process sequence including pre clean chambers physical vapor deposition chambers chemical vapor deposition chambers etch chambers and other plasma processing chambers application_number US 9741302 A description 0025 fig1 is a schematic view of a cluster tool system having multiple substrate processing chambers the cluster tool system 100 includes vacuum load lock chambers 105 and 110 attached to a first stage transfer chamber 115 the load lock chambers 105 and 110 maintain vacuum conditions within the first stage transfer chamber 115 while substrates enter and exit system 100 a first robot 120 transfers substrates between the load lock chambers 105 and 110 and one or more substrate processing chambers 125 and 130 attached to the first stage transfer chamber 115 processing chambers 125 and 130 can be outfitted to perform a number of substrate processing operations such as chemical vapor deposition cvd physical vapor deposition pvd etch pre clean degas orientation and other substrate processes the first robot 120 also transfers substrates to from one or more transfer chambers 135 disposed between the first stage transfer chamber 115 and a second stage transfer chamber 140 the transfer chambers 135 are used to maintain ultrahigh vacuum conditions in the second stage transfer chamber 140 while allowing substrates to be transferred between the first stage transfer chamber 115 and the second stage transfer chamber 140 a second robot 145 transfers substrates between the transfer chambers 135 and a plurality of substrate processing chambers 150 155 160 and 165 similar to processing chambers 125 and 130 the processing chambers 150 to 165 can be outfitted to perform a variety of substrate processing operations for.