for 1 u2266 x u2266 100 the material systems are also selected such that any insulting film that might form on the surface of the target as a result of reaction with the sputter gas does not substantially impede subsequent deposition the reactions leading to the conversion of the sputtered constituents and gas constituents into the electrolyte film occur on the surface of the film as it is being deposited by making the target electrically conducting the type of target excitation is no longer limited to rf power therefore in step 103 the vacuum deposition chamber provided does not have to be rf compatible which otherwise is difficult for large manufacturing tools similarly the sputtering process in step 105 can be done with cheaper dc or pulsed dc power electronics at higher rates compared to rf in addition the depositing process in step 107 can be finished faster and cheaper compared with previous rf methods according to the embodiments of the present invention steps 103 105 and 107 may be performed with any combination of rf ranging from 1 mhz to 1 ghz ac pulsed dc and dc power alone or together in various combinations to produce the films of interest it is also possible that in step 107 more than one film constituent is deposited in sequence using a non sputter technique such as thermal evaporation chemical vapor deposition or cathodic arc deposition this non sputtered constituent may be deposited from an electrically insulating or conducting source the latter source material most preferably includes the deposition be performed in a reactive atmosphere with regard to the chemical reactivity of the source material in accordance with the embodiments of the present invention the sputter target.