reliability are improved to achieve both high operation speed and process simplicity this is accomplished by integrating the photo detector and the amplifier on a single chip which are essential elements of the optical receiver of the optical communication system also layer between a pin photo detector and a junction field effect transistor is shared as large as possible through a two times epitaxial growth in this way the opto electronic integrated circuit is optimized application_number US 96411392 A description fig2 shows a cross sectional view of an embodiment of an inp family optical integrated circuit in accordance with the invention this embodiment shows a planar optical integrated circuit integrated on a single chip having a structure which comprises a semi insulated inp substrate 21 a pin optical detector including a n type indium phosphide inp channel layer 22 formed on the semi insulated substrate 21 an undoped indium gallium arsenide ingaas absorption layer 23 formed on the n type inp channel layer 22 a p type inp clad layer 24 formed for the pn junction after selectively and anisotropically etching only the ingaas absorption layer 23 in order to expose an in layer 111 a p type metal 25 vapor deposited on the p type inp clad layer 24 and a n type metal 26 vapor deposited on the n type inp layer 22 except for the ingaas absorption layer after the inp layer has been selectively etched the terms p type metal and n.