anode u2014 the process according to fig6 is applied at an electron trap with magnetic field h circulating in the form of a loop which is localized at the sputter surface 1 in the outermost the peripheral region the control magnetic field h s in this case is preferably realized by means of a peripherally encircling helmholtz coil as will be explained later in fig7 again schematically the top view is depicted onto a magnetron source according to the invention or a magnetron source controlled according to the invention is shown beneath the target configuration 3 which is mounted under insulation for example in a source frame 4 with the anode a magnet configuration 9 with permanent magnet collars 9 i and 9 au disposed oppositely poled is provided with the polarization directed substantially perpendicularly to the sputter surface 1 of the discrete permanent magnets 10 the exemplary orientation of the magnetic dipoles of the permanent magnets 10 are depicted at d 9i as well as d 9au the permanent magnet collars 9 i and 9 au generate the loop 5 of the circulating tunnel form magnetic field h following the first formulation of the present invention explained in conjunction.