the implanted surface regions 34 or due to the retardation of the growth rate of the second semiconductor material on the surfaces of the implanted surface regions 34 thus the deposited second semiconductor material has an asymmetric vertical cross sectional shape along a vertical plane perpendicular to the first and second sidewalls 31 a 31 b within the second device region r 2 the second semiconductor material is deposited on physically exposed surfaces of the plurality of second semiconductor fins 40 concurrently with the deposition of the second semiconductor material on physically exposed surfaces of the plurality of first semiconductor fins 30 the second semiconductor material can be deposited with the same growth rate at all sidewalls of the plurality of second semiconductor fins 40 that are perpendicular to the lengthwise direction of the second gate electrode 52 b the sidewalls of the plurality of second semiconductor fins 40 that are perpendicular to the lengthwise direction of the second gate electrode 52 b can have the same surface orientations and do not include the species of dopants contained within the implanted surface regions 34 the deposition rate of the second semiconductor material on the plurality of second semiconductor fins 40 can be the same as the deposition rate of the second semiconductor material on the portions of the plurality of first semiconductor fins 30 that do not include any dopants implanted during the processing steps of fig4 a and 4b the portions of the second semiconductor material deposited on the plurality of first semiconductor fins 30 constitutes various raised semiconductor regions which include first raised source regions 76 s and first raised drain regions 76 d the portions of the second semiconductor material.