w s 220 and the purge gas is supplied to the semiconductor substrate w so as to purge the ge based gas and the te based gas s 230 and the reaction gas that is used to reduce the ge based gas and the te based gas is supplied to the semiconductor substrate w s 240 and last the purge gas is supplied to the semiconductor substrate w so as to purge the reaction gas s 250 this procedure corresponds to a cycle d next the source gas formed of a combination of the te based gas and the sb based gas is supplied to the semiconductor substrate w s 220 and the purge gas is supplied to the semiconductor substrate w so as to purge the te based gas and the sb based gas s 230 and the reaction gas that is used to reduce the te based gas and the sb based gas is supplied to the semiconductor substrate w s 240 and last the purge gas is supplied to the semiconductor substrate w so as to purge the reaction gas s 250 this procedure corresponds to a cycle e next the source gas formed of a combination of the ge based gas and the sb based gas is supplied to the semiconductor substrate w s 220 and the purge gas is supplied to the semiconductor substrate w so as to purge the ge based gas and the sb based gas s 230 and the reaction gas that is used to reduce the ge based gas and the sb based gas is supplied to the semiconductor substrate w s 240 and last the purge gas is supplied to the semiconductor substrate w so as to.