stripping is then used to remove the remaining photoresist mask 23 as shown in the top view of fig1 c after the photoresist is remove the remaining second insulating layer 16 between and contiguous with the four adjacent bottom electrodes 20 results in the more robust structure also after etching the second insulating layer 16 between bottom electrodes 20 to the surface of the first insulating layer 12 the outer sidewalls 20 s of the bottom electrodes 20 are exposed to increase the capacitor area to better appreciate the advantages of the second embodiment fig1 shows a cross section through the region 11 11 u2032 of fig1 c and fig1 shows a cross section through the region 12 12 u2032 of fig1 c the cross section through the region 11 11 u2032 shows the portions of the second insulating layer 16 retained between and contiguous with four adjacent bottom electrodes 20 this increased physical supporting structure 16 prevents damage to the bottom electrodes 20 during subsequent processing fig1 shows the cross section through the region 12 12 u2032 where the second insulating layer 16 is removed between pairs of adjacent bottom electrodes 20 this exposes the outside surface 20 s u2032 between pairs of adjacent bottom electrodes for increased capacitance area by controlling.