30 and means 50 responsive to sensing means 48 for developing the electrical signal sensing means 48 includes diffused piezoresistors 52a and 52b associated with peripheral edges 22a and 22b and diffused piezoresistors 54a and 54b associated with peripheral edges 24a and 24b respectively piezoresistors 52a and 52b are diffused to be parallel to the respective one of peripheral edges 22a and 22b to sense longitudinal stress and strain within diaphragm 30 similarly piezoresistors 54a and 54b are diffused orthogonally to the respective one of peripheral edges 24a and 24b to sense latitudinal stress and strain within diaphragm 30 piezoresistors 52a b and 54a b are disposed substantially at the midpoint of the respective one of peripheral edges 22a b and 24a b and further disposed to be proximate to the clamp edge of diaphragm 30 to sense substantially the maximum stress and strain therein the further description of the arrangement of piezoresistors 52a b and 54a b will become more apparent from the description hereinbelow in reference to fig6 electrical signal developing means 50 is disposed in first surface 26 underneath pedestal 16 this region of diaphragm 30 is a region of minimum deflection due to the thickness of pedestal 18 thus the electrical signal developed by developing means 50 is substantially.