2 and mixtures of thereof and conducting the annealing for a time in the range of approximately 1 60 min appropriate reaction conditions of elevated temperature are approximately 150 600 u00b0 c more preferably the appropriate reaction conditions of elevated temperature are approximately 200 500 u00b0 c the solventless liquid mixture may be introduced into the reaction zone and vaporized at a temperature of approximately 50 200 u00b0 c more preferably the temperature is approximately 80 120 u00b0 c the reaction zone pressure may be approximately 0 01 50 torr more preferably the pressure is approximately 0 1 5 torr the deposition rate of the thin film is in the range of approximately 1 to 300 angstoms per minute post deposition the films are annealed at a temperature in the range of approximately 200 500 u00b0 c in an anneal gas selected from the group consisting of n 2 ar he o 2 o 3 n 2 o no h 2 o h 2 o 2 and mixtures of thereof for 1 to 60 minutes to improve their electrical properties as shown in fig1 annealed films are compared against non annealed films wherein the annealed films show consistently lower leakage current rates required of materials in electronic structures preferably the films are annealed under n 2 atmosphere at 400 u00b0 c for 30 min such films can be.