organic solvent such as tetrahydrofuran dioxane or diethyl ether at a reduced temperature of within the range of from about u2212 40 u00b0 c to about room temperature under an inert atmosphere such as argon is treated with base such as potassium hydroxide potassium tert butoxide lithium or potassium bis trimethylsilylamide or n butyllithium in an inert organic solvent such as hexane tetrahydrofuran or diethyl ether while maintaining temperature of the reaction mixture below from about u2212 40 u00b0 c to about room temperature the reaction mixture is treated with dihalide ii u2032 for example 1 4 diiodobutane or 1 4 dibromo 2 butene to form the halogenated compound iii the halogenated compound iii is treated with r 1 h iv containing an activated proton optionally in the presence of alkali metal base such as potassium carbonate sodium hydride or cesium carbonate in an inert organic solvent such as dimethylformamide acetonitrile or tetrahydrofuran under an inert atmosphere such as argon to form compound of the invention ia the above anion formation reaction is carried out employing a molar ratio of dihalide ii u2032 compound ii of within the range from about 10 1 to about 0 5 1 preferably from about 2 1 to about 0 8 1 halide iii is reacted with iv employing a molar ratio of iv iii within the range from about 10 1 to about 0 5 1.