deposition pvd techniques such as evaporative deposition and sputtering are used to form 320 the layer of germanium selenide ge x se 1 u2212 x and silver ag other processes such as chemical vapor deposition cvd and co evaporation can also be used the process advances from forming 320 the layer of germanium selenide ge x se 1 u2212 x and silver ag to forming 330 a layer of silver selenide the process forms 330 a layer of a silver selenide the layer of silver selenide should be formed on the germanium selenide ge x se 1 u2212 x layer or on a co deposited layer of silver ag and germanium selenide ge x se 1 u2212 x but not directly on a silver ag layer advantageously silver selenide is directly deposited and a uv photodoping step is not needed the process forms 340 a second electrode of the memory cell and the process ends it will be understood by one of ordinary skill in the art that the first electrode and the second electrode can correspond to for example a top electrode and a bottom electrode respectively or to side electrodes the layer s of germanium selenide ge x se 1 u2212 x and silver ag formed 320 by the process and the layer of silver selenide formed 330 by the process.