reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber this reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer application_number US 201514844450 A description it will be readily understood that the components of the present embodiments as generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations thus the following detailed description of the present embodiments of the apparatus system and method as presented in the figures is not intended to limit the scope of the embodiments as claimed but is merely representative of selected embodiments reference throughout this specification to u201c a select embodiment u201d u201c one embodiment u201d or u201c an embodiment u201d means that a particular feature structure or characteristic described in connection with the embodiment is included in at least one embodiment thus appearances of the phrases u201c a select embodiment u201d u201c in one embodiment u201d or u201c in an embodiment u201d in various places throughout this specification are not necessarily referring to the same embodiment furthermore the described features structures or characteristics may be combined in any suitable manner in one or more embodiments in the following description numerous specific details are provided such as examples of sensors detectors etc to provide a thorough understanding of embodiments one skilled in the relevant art will recognize however that the embodiments can be practiced without one or more of the specific details or with other methods components materials etc in other instances well known structures materials or operations.