formed in the substrate 29 with alignment holes 41 fig3 a illustrates a rectangular trench 40 having beveled sides 43 that shows the configuration of the trench if the substrate would be lt 100 gt silicon or formed by means of a mold and wet anisotropic etching machined the trench this embodiment 40 also illustrates a smaller trench footprint for later illustration the trench 42 in fig3 b illustrates another trench formed or machined in the same manner as 40 but allowing for two separate optoelectronic device chips to be placed on the substrate along the direction of the width of the substrate due to the configuration of trench 42 which is also formed with beveled sides double trenches 44 in fig3 c are formed or machined in the same manner as 40 but allow for two separate optoelectronic device chips to be placed in a parallel fashion on the substrate along the direction of the height of the substrate the rectangular trench 46 in fig3 d illustrates the machining or forming of a trench in a different manner u2014 if the substrate would be silicon or formed by means of a silicon mold and deep reactive ion etching or drie machined the trench or formed by means of a mold or if the substrate would be silicon or formed by means of a mold and wet anisotropic etching machining the trench which would be a parallelogram such a trench does not have beveled sides as shown the two trenches 48 illustrated in fig3 e are formed or machined in.