of a glass substrate 110 an insulating layer 130 is formed on the surface of the source electrode 120 a here the insulating layer 130 may be formed of al 2 o 3 sio 2 sio x si 3 n x tio 2 ta 2 o 5 zro 2 or hfo 2 as described above gate electrodes 140 are formed on the insulating layer 130 and charge carrier block layers 150 are formed on the surfaces of the gate electrodes 140 in order to insulate the gate electrodes 140 from other layers here the charge carrier block layers 150 may be formed by thermal oxidation plasma oxidation or anodizing an organic semiconductor layer 160 is formed on the gate electrodes 140 and in the spaces between the gate electrodes 140 a drain electrode 120 b is formed on the organic semiconductor layer 160 and a transistor insulating layer 170 as an insulating layer for protecting and insulating the structure under the transistor insulating layer 170 is formed on the drain electrode 120 b here the transistor insulating layer 170 may be formed of an inorganic material such as sinx or formed by arranging an organic layer such as benzocyclobutene bcb or acryl on the inorganic material the transistor insulating layer 170 may be formed of a single layer or multi layers the transistor layer can be.