embodiment of the present invention is that it has been determined that the vaporization rates of the two organometallic precursors are different thus if they were bubbled in one bubbler the ratio of the precursors in the resulting titanium silicon nitride film would be fixed by their vaporization rates using separate bubblers 58 enables tailoring of the ratio of the precursors in the final film in one embodiment the bubblers 58 may be operated at around 50 u00b0 c while the chamber 52 may be maintained between 400 u00b0 and 500 u00b0 c excess gas within the chamber 52 may be withdrawn by a pump as indicated in fig6 generally the more silicon in the titanium silicon nitride films the higher resistivity of the resulting compound in one advantageous embodiment a ratio of tdmat to trdmasi of one to ten may be utilized to achieve about 20 atomic percent silicon however in other embodiments a single bubbler may be utilized in addition direct liquid injection dli may be utilized in direct liquid injection a deposition chamber may be maintained at a temperature of from 400 u00b0 to 500 u00b0 c in one embodiment a mixture of the two organometallic precursors in liquid form may be directly injected into the chamber for in situ vaporization and deposition in one embodiment the layer 22 may be approximately 50 angstroms thick over the layer 22 is a layer of nitride 23 fig5 that in one embodiment may be about 200 angstroms thick finally over the layer 23 may be a layer of deposited oxide which in.