materials for cmp stop layer 112 are diamond like carbon dlc formed by ion beam deposition ibd to a thickness in the range of approximately 10 to 50 nm and tantalum ta sputter deposited to a thickness in the range of approximately 20 to 100 nm other known cmp stop layer materials include one or more nitrides of ta tanx and titanium tinx as well as cr and nicr alloy in fig4 g the magnetic material layer 114 is deposited over the cmp stop layer 112 to fill the recesses in the plastic film 106 the magnetic material is any soft relatively low coercivity magnetic material such as nife 30 70 or nife 55 45 or nife 80 20 or nifeco 35 12 53 or feco 62 38 or other alloys of ni fe and or co the magnetic material layer 114 can be deposited by evaporation or electroplating or other known processes but the preferred process is by ibd the magnetic material layer 114 is deposited to a thickness in the range of approximately 100 to 300 nm next the cmp is performed until the cmp stop layer 112 in the non recessed regions of the plastic film 106 is reached this removes the magnetic material above the cmp stop layer 112 in the non recessed regions and a portion of the magnetic material above the recessed regions but leaves the magnetic material in the recesses of the plastic film 106 the cmp process can use any slurry known to remove the magnetic material the.