cubic boron nitride as shown in fig7 barrier layer 280 completely surrounds conductive material 250 in one embodiment there may be many conductive structures such as conductive material 250 formed to various contact points on substrate 210 a representative pitch between such structures reference number 255 in fig6 may be on the order of about 70 nanometers according to current technologies for interconnection lines accordingly the thickness of barrier layer 280 is selected in one embodiment to be sufficient to surround conductive material 250 but thin enough to leave an area between conductive material structures exposed so as for example not to create voids between the structures where a pitch between conductive structures is on the order of about 70 nanometers a thickness of barrier layer 280 may representatively be on the order of 30 to 40 nanometers fig8 shows the structure of fig7 following the introduction of dielectric layer 290 in one embodiment dielectric layer 290 is introduced as a blanket layer over a portion including the entire portion of the structure dielectric layer 290 in one embodiment is selected to have a low dielectric constant preferably a dielectric constant less than two 2 in one embodiment dielectric layer 290 is an aerogel xlk aerogel is described as a porous glass and can have a dielectric constant on the order of 1 1 although aerogel has a low dielectric constant it is known to have inferior mechanical properties being weak and brittle in one embodiment dielectric layer 290 of aerogel may be introduced as a liquid possibly through the use of a solvent the material may then be dried supercritical drying to evaporate the solvent and form a solid dielectric material layer planarization may also be necessary to expose barrier layer 280 over conductive material 250 or to.