first the grown cdte surface is exposed to the hg flux the flux is adjusted such that the chamber pressure is around 2 0 u00d7 10 u2212 5 torr next a te flux is provided for about 10 seconds followed by a subsequent exposure to cdte the te and cdte fluxes are adjusted so that their ratio provides the growth of hgcdte with desired composition during the growth the surface is always exposed to hg te and cdte fluxes the substrate temperature is ramped down during the growth of hgcdte to compensate for the heat absorption into hgcdte layer as it grows the hgcdte growth process takes approximately 4 hours and the entire growth time from loading to unloading takes about 20 hours the result is shown in fig1 b in fig1 b once the buffer layer 46 is grown the growth of hgcdte commences it should be noted that depending on the buffer material used a waiting period may be necessary prior to mct growth the waiting period being defined by the difference between the growth temperature of the buffer and the growth temperature of the hgcdte layer and by the system ability to adjust to the new temperature setting during the waiting period the buffer layer may be exposed to specific fluxes like tellurium mercury others in order to prevent any material or specific atomic species from desorbing a buffer layer 46 of cdte or the like is first grown followed by the growth of indium doped n type hgcdte layer 48 suitable for.