it is the case that contact areas of mc landing on rx are equalized and maximized that is the contact asymmetry existing as depicted by a line 34 in fig2 a and 2 b have been eliminated thereby improving overall symmetry of the sram cell furthermore as depicted in fig6 every formed mc region is contacted with ca m1 reduced charging during plasma processing that is m1 is provided for cross coupling and ridding of any mc that do not have ca landing on top of them thus all of mc regions will be subject to the plasma processing coming from the ca contact being open thus preventing any asymmetric charging for the devices that would result fig8 depicts a schematic and layout capture of the d cache sram cell design 500 according to an alternative embodiment of the invention this d cache sram cell design 500 comprises a subset of the improvements depicted in the embodiments depicted in the sram cell design 100 of fig6 for example the mc pc distance at p 1 adjusted to 79 nm same as p 0 symmetrical but not quite as much as in the embodiment depicted in fig6 the mc rx landing pads have been enlarged and provide more symmetry but not quite as much symmetry as in the embodiment depicted in fig6 it is noted also that the direction of the extended mc rx landing pads are in the opposite direction than the embodiment depicted in fig6 further the mc local interconnect 23 u2032 retains its l shape structure as in the prior art structure.