131 more information regarding acceptor substrate 130 and donor substrate 140 can be found in a co pending u s patent application ser no 11 092 501 entitled u201c semiconductor bonding and layer transfer method u201d which was filed on mar 29 2005 by the same inventor and is incorporated in its entirety herein by reference in accordance with the invention conductive region 144 is bonded to region 121 the bonding can be done in many different ways as discussed in the above cited reference for example regions 121 and 144 can be heated so that material included in them intermixes and couples them together regions 121 and or 144 can even be reflowed as discussed in a co pending u s patent application ser no 11 092 498 entitled u201c wafer bonding method u201d which was filed on mar 29 2005 by the same inventor and is incorporated in its entirety herein by reference after regions 121 and 144 are bonded together donor substrate 140 is removed from structure 101 this can be done by mechanical force chemical force or chemical mechanical polishing more information on how substrate 140 can be removed from structure 101 can be found in the co pending u s patent application ser no 11 092.