ineffective area 22 is large temperature of the ineffective area 22 is higher than the temperature of the ineffective area 22 in this embodiment as shown in fig7 b and 10b in addition in the case of the comparative example since the ineffective area 22 and the effective area 20 are in direct contact with each other heat of the ineffective area 22 is conducted to an outer peripheral portion an area a in fig1 b of the effective area 20 to cause a temperature distribution in the effective area 20 consequently the area a of the effective area 20 is heated to temperature higher than the substrate temperature at the time of formation of the films and internal stresses of the films constituting the displacement portion 13 change thus fluctuation occurs in three dimensional shapes of the 16 u00d7 16 displacement portions 13 of the effective area 20 therefore even in the effective area 20 shapes of the displacement portions 13 become different depending on a place and it is impossible to form the three dimensional structures 1 having the same shape over the entire surface in the effective area 20 note that the method of removing a sacrificial layer is not limited to the plasma ashing and it is also possible to use ion ashing dry etching and the like in this case it is also possible to prevent heat of reaction of an ineffective area from being conducted to an effective area by providing a dummy area in a boundary of the effective area and.