titanium is transformed to phase c40 titanium disilicide where it overlies the silicon regions and wherein the titanium not overlying the silicon regions is unreacted the unreacted titanium layer is removed the substrate is subjected to a second annealing whereby the phase c40 titanium disilicide is transformed to phase c54 titanium disilicide to complete formation of a phase 54 titanium disilicide film in the manufacture of an integrated circuit application_number US 83851301 A description the process of the present invention can be used in any application in which it is desired to form a titanium disilicide film overlying a silicon region the process of the invention will be described for the application in which tisi 2 is formed overlying a gate electrode and source and drain regions it is to be understood that the invention is not limited to the application so illustrated referring now more particularly to fig1 there is shown an illustration of a portion of a partially completed integrated circuit the semiconductor substrate 10 is preferably composed of silicon having a 100 crystallographic orientation gate electrodes 16 and source and drain regions 20 are formed in and on the semiconductor substrate as is conventional in the art for example gate electrode 16 has been formed overlying a gate oxide layer 14 sidewall spacers such as silicon oxide 18 are formed on the gate source and drain regions are n type or p type depending on the type of device to be fabricated the wafer is subjected to a pre metal clean such as a.