the elements in the leds two sets of mqws compare 100 102 in fig1 were grown at different temperatures so as to obtain emissions at different wavelengths after a high temperature gan layer compare layer 3 in fig1 grown on a low temperature gan buffer compare layer 2 in fig1 on e g a sapphire substrate compare layer 1 of fig1 the temperature in the mocvd chamber is lowered to about 700 750 u00b0 c to grow a first set of mqws consisting of about 3 to 5 wells a gan barrier compare layer 4 in fig1 is first grown to a thickness of about 5 0 10 0 nm with si doping ns about 2 0 u00d7 10 17 cm u2212 3 a thin wetting layer compare layer 5 in fig1 of in x ga 1 x n with composition of x about 0 10 0 20 and thickness of about 1 nm is grown to enhance the incorporation of the indium nitride rich qds during the in burst process the in atoms from the indium precursor segregate at the dangling bonds of the wetting layer of ingan to serve as a seed layer for the subsequent growth of.