a tantalum nitride barrier layer 14 and one hundred angstroms of a tantalum adhesion layer 16 each deposited by self ionized plasma deposition at three hundred watts alternating current bias and fifteen hundred angstroms of a copper seed layer 18 deposited by self ionized plasma deposition at fifty watts alternating current bias as shown by fig6 and 7 the mean sheet resistance and standard deviation percentage of the barrier seed layer of the present invention curves a and d are relatively constant over time whereas the mean sheet resistance and standard deviation percentage of the barrier seed layer made by a conventional process vary significantly over time it is indicated based on the data given in table 1 that the reflectance of a metal conductive layer 20 applied by an electroplating process to the barrier seed layer made according to the present invention exhibits substantially higher reflectance typically above about seventy percent and that subsequent chemical mechanical polishing of the conductive layer 20 proceeds in a substantially uniform manner from substrate to substrate as a result of the observed stability of the barrier seed layer provided according to the present invention the time before which the conduction layer 20 is deposited on the barrier seed layer is less critical providing increased manufacturing freedom most preferably the barrier seed layer is formed by a self ionized plasma deposition with an alternating current bias of no less than about three hundred watts where the tantalum nitride barrier layer 14 is deposited to about ninety angstroms the tantalum adhesion layer 16 is deposited to about one.