10 kev to about 50 kev in this example the dopant used would be arsenic further a implant also referred to as a u201c halo u201d or u201c pocket u201d implant may be performed this type of implant involves implanting the opposite type of species into the device for example boron or a bf 2 implant may be made at moderate doses such as about 1e12 cm 3 to about 5e12 cm u2212 3 the dose may be at a higher energy than that of the low voltage ldd implant or the implant may be at a tilt angle this type of implant further shallows the ldd by cutting off the bottom of the junction thereafter an ldd implant is made for the core logic devices which are low voltage high performance devices in this example this ldd implant is accomplished by depositing photoresist layer 352 in fig3 c the photoresist layer shown in fig3 c has been patterned and etched to leave photoresist layer 352 in section 342 while sections 344 and 346 remain exposed for the ldd implant which is a low voltage high performance ldd implant thereafter an ldd implant is performed to form ldd regions 354 356 358 360 362 and 364 in accordance with a preferred embodiment of the present invention however the device in section 342 does not receive.