parameters where a depositing speed is between 1 nm min and 10 nm min 3 a second layer of parylene n with a thickness of 20 nm is grown by using polymer cvd technology the deposition process is performed by using a parylene polymer cvd apparatus with the standard parameters where a depositing speed is between 1 nm min and 10 nm min 4 a third layer of parylene n with a thickness of 20 nm is grown by using polymer cvd technology the deposition process is performed by using a parylene polymer cvd apparatus with the standard parameters where a depositing speed is between 1 nm min and 10 nm min 5 a via for leading out the bottom electrode is defined by lithography and rie etching 6 w with a thickness of 500 nm is sputtered by pvd process a top electrode is defined by the conventional lithography and lift off processes meanwhile the bottom electrode is led out in this embodiment 2 the thicknesses of multi layer parylene are 10 20 10 nm respectively the layers with the set reset course occurring are 10 20 10 nm respectively and since the middle layer with 20 nm is thicker.