this substrate was subjected to ultrasonic degreasing washing in ethanol and then introduced into the pvd aip device after evacuated to 5 u00d7 10 u2212 3 pa the substrate was heated to 500 u00b0 c then etching by ar ions was carried out for 5 minutes subsequently the laminated coating was formed on the substrate according to an aip method the laminated coating was formed under the conditions where nitrogen gas was introduced to set the total pressure to 4 pa a discharge current of 150 a was supplied to arc evaporation sources target 100 mm in diameter the substrate temperature was set to 500 u00b0 c and the negative bias voltage was set to 30 v as the targets for forming the coating a and the coating b targets containing the elements m and si further containing b when forming the coating containing b of the compositions shown in table 1 were used moreover when forming a coating containing c hydrocarbon gas was further used as an atmospheric gas in this example only arc evaporation sources 6 a 6 b were used among the plurality of evaporation sources in the device illustrated in fig1 the target for forming the coating.