a minimum pitch in an integrated circuit beyond photolithographic resolution controls the defined pitches of the target layer by use of polymer spacer photo insensitive polymer plug and polymer mask during the process so as to achieve the minimum pitch of the target layer beyond photolithographic resolution applied to memory manufacture this method is capable of simultaneously overcoming the process difficulty of significant difference between polysilicon pitches in memory array region and periphery region application_number US 85480104 A description fig1 a u2013 1i show a first embodiment according to the present invention referring to fig1 a an oxide 12 and a polysilicon 14 are deposited on a substrate 10 on which a memory array region 10 a and a periphery region 10 b are defined the polysilicon 14 is the target layer that will be formed with pitches beyond photolithographic resolution in the following process an anti reflection coating arc 16 and a photoresist 18 are applied on the polysilicon 14 and a photoresist pattern 18 is defined to the photoresist 18 after exposure and development the minimum pitch in the memory array region 10 a is a and the minimum pitch in the periphery region 10 b is b pitch is defined as the sum of a line width and a line space and preferably both the line width and the space in the memory array region are a 2 as shown in fig1 b referring to fig1 c polymer spacers 20 are formed on each sidewall of the photoresist.