exposed regions are preferably covered by the highly reflective metal e g ag the highly reflective layer 50 may or may not be used as a current carrier while still achieving the goals of the present invention fig1 illustrates how the dielectric layer 26 may be between the substrate 46 and the metal highly reflective layer 50 for enhancing reflectivity the index of refraction of the dielectric layer 26 e g 1 4 1 5 is selected to be lower than that of the substrate 46 fig1 may illustrate any of the areas of high reflectivity such as across lines 5 5 7 7 or 9 9 of fig4 therefore light incident the interface at greater than the critical angle such as light ray 74 will reflect by total internal reflection without losses and light that enters the dielectric layer 26 such as light ray 76 will be reflected by the reflective layer 50 further in one example a thinned n type layer 18 including the n type layer surface 28 may extend to the left edge of fig1 if the dielectric layer 26 and reflective layer 50 are formed over the thinned n type layer 18 the relatively low index of the dielectric layer 26 will cause light incident at larger than the critical angle to reflect off the gan dielectric interface without losses light that enters the dielectric layer 26 will be reflected by.