conveying system 12 of the structure such as described above due to a difference in process speed the temperature adjustment for the wafer 1 can be done within a period in which the wafer 1 is held in a stand by state at the substrate receiving station 11 thus the temperature adjustment of the wafer 1 can be accomplished without a loss in the sequential operations as a result the wafer temperature adjustment is attainable without a decrease of the overall processing speed of the semiconductor exposure apparatus in accordance with the embodiments as described hereinbefore the substrate temperature adjustment can be accomplished without a decrease of the processing speed of the semiconductor manufacturing apparatus as a whole further production and adhesion of contaminants can be prevented particularly in a semiconductor exposure apparatus when a substrate whose temperature is thus controlled is used a high precision exposure process can be provided next an embodiment of a semiconductor device manufacturing method which uses a semiconductor exposure apparatus such as described above will be explained fig6 is a flowchart of a procedure for the manufacture of microdevices such as semiconductor chips e g ics or lsis liquid crystal panels ccds thin film magnetic heads or micro machines for example step 1 is a design process for designing a circuit of a semiconductor device step 2 is a process for making a mask on the basis of the circuit pattern design step 3 is a process for preparing a wafer by using a material such as silicon step 4 is a wafer process called a pre process wherein by using the so prepared mask and wafer circuits are practically formed on the wafer through lithography step 5 subsequent to this is an assembling step called a post process wherein.