307 illustrated in fig7 d can be substantially controlled and it can have a different concentration of dopant when compared to optional channel implant region 305 the width of the optional channel implant region 307 is controlled by the manner in which the nitride layer 273 e g third insulating layer is selectively etched selective etching of the nitride layer 273 as shown in fig7 c can result in nitride spacers 275 a 275 b shown in fig7 d which can form an optional channel implant region 307 that is substantially smaller than the width of the gate stack 205 and can also be self aligning to the gate stack 205 depending upon the desired device 39 s operating characteristics the width of the channel implant region 307 as illustrated in fig7 d can be narrower or wider than illustrated furthermore the dopant concentration of channel implant region 307 can be greater or less than the dopant concentration found in channel implant region 305 as can be appreciated from the various embodiments nitride spacers 275 a 275 b can be fabricated to any desired size located above the conducting layer 202 or layer 211 to create different optional channel implant regions 305 and 307 that can be different in width and.