embodiment the implant energy of the hydrogen plad process may linearly ramp up in a predetermined interval for example 2000 ev to 5000 ev for the hydrogen plad process however implant dosages implant times and implant energies used in the hydrogen plad process depend on a thickness of the dielectric layer for example in one embodiment the implant dosage is about 4e16 8e16 cm 2 the implant time is about 53 98 seconds and the implant energy is about 2000 ev to 5000 ev while a thickness of the dielectric layer is about 50 nm in another embodiment the implant dosage is about 2e16 4e16 cm 2 the implant time is about 30 53 seconds and the implant energy is about 1000 ev to 3000 ev while a thickness of the dielectric layer is about 30 nm in yet another embodiment the implant dosage is about 5e16 1e17 cm 2 the implant time is about 60 100 seconds and the implant energy is about 2000 ev to 10000 ev while a thickness of the dielectric layer is about 100 nm next at step s 3 an annealing process is performed after the hydrogen plad process is completed to uniformly drive the hydrogen atom within the dielectric layer in one embodiment the annealing process is performed at a temperature of between 300 600 u00b0 c.