first temperature may be between 30 u00b0 c and 50 u00b0 c this first temperature may be 40 u00b0 c the secondary vapor delivery system 220 may be either a vaporizer or a bubbler if a solid cvd precursor material is used the secondary vapor delivery system 220 may be a sublimation system if a solid cvd precursor system is used the solid cvd precursor may be trimethyl indium in one preferred embodiment the secondary vapor delivery system 220 is a bubbler a carrier gas is introduced into the secondary vapor delivery system by way of a second pressurizing means 225 the carrier gas may be an inert gas the carrier gas may be helium nitrogen or argon the carrier gas may be introduced at or near the bottom of the liquid capacity of cvd precursor in the secondary vapor delivery system due to the vapor pressure of the liquid cvd precursor the carrier gas is saturated with a certain amount of the cvd precursor which cvd precursor is the carried over with the carrier gas as it leaves the bubbler the bubbler technique is most useful for those precursors that have a substantial vapor pressure the vaporizer technique is most useful for precursors with very low vapor pressures once the cvd precursor.