as an input to e t integrating detector 124 this results in e t integrating detector 124 deriving an e t output from detector 124 having a value which is proportional to the energy transmitted through wafer 112 that results from the radiation pulse incident on the flooded given surface area of the ic die currently being operated on when pulsed laser 102 is operated in its low power probe mode the energy of the probe radiation must be low enough that there will be no damage and significant heating to wafer 112 however the energy of the probe radiation has to be at the very least high enough for the reflected radiation energy to be detected by e r integrating detector 116 in the special case where each of the transmitted and scattered radiation energies are considered to be insignificant however in the general case where all of the reflected transmitted and scattered radiation energies are considered to be significant the energy of the probe radiation has to be high enough for all of these radiation energies to be detected by e r integrating detector 116 e t integrating detector 124 and the e s integrating detector formed by radiation to electric transducer 120 and e s integrating means 122 whenever pulsed laser 102 is being operated in its high power operational mode the respective e r e t and e s outputs from multiple physical.