stitch bonding is performed on bump electrode 14 further the whole is sealed with sealing resin 54 fig8 a 8d are sectional views showing a manufacturing method of the semiconductor device concerning second embodiment of the present invention first as shown in fig8 a bump electrode 14 is formed by joining the gold ball at the tip of gold wire 13 discharged from capillary 12 on aluminum pad 11 of chip 23 however the thing of the material same as gold wire 13 as first embodiment is used and as shown in fig8 b capillary 12 is raised by 15 u03bcm here since the height of bump electrode 14 is 15 u03bcm capillary 12 is evacuated above bump electrode 14 in the dimension of capillary 12 and gold wire 13 which are used in the embodiment the inside diameter of capillary 12 is 30 u03bcm and the diameter of gold wire 13 is 23 u03bcm capillary 12 is made to reciprocate in a horizontal direction after that as shown in fig8 c however the operational amplitude of capillary 12 is more than the clearance between gold wire 13 and the inner wall of capillary 12 at least since the diameter of gold wire 13 is 23 u03bcm and the inside diameter of capillary 12 is 30 u03bcm concretely the clearance between both is 3 5 u03bcm at one side when it is averaged and when both sides are put together it.