by pecvd or by peald and the disposable spacer 28 which can be comprised of a nitride also deposited by the pecvd or peald process in this embodiment the thin spacer layer 26 is removed during the processing step shown in fig9 fig8 shows the structure of fig7 after growth of rsd structures 30 and the removal of the sacrificial spacer 28 as in the embodiment of fig2 the rsd structures 30 can be formed by epitaxial growth e g in situ boron doped isbd sige for pmos and in situ phosphorus doped isp si sic for nmos or undoped si sige fig8 shows faceted epitaxy of sige or si sige or si c selective to si with a sloping faceted sidewall of each of the rsd structures 30 a wet cleaning etch can be performed prior to growth of the rsd structures 30 if not in situ doped the rsd structures can be implanted an anneal is performed to activate the s d dopants after the epi growth of the rsd structures 30 another etch such as one based on hot phosphoric acid or an rie process selective to nitride is performed to remove the nitride spacer 28 resulting in the intermediate structure shown in fig8 fig9 shows the structure of fig8 after removal of the thin oxide spacer 26 a wet etch process can be used to remove the spacer 26 due to the presence of the dummy gate plug 40 which.