is the time at which the rf biasing is turned off after the rf biasing has been turned on during the sputter deposition step the parameters wherein the process of this invention is most effective are given by the first two equations given above show the relationship between the rf biasing on off times and the total deposition time t rfoff u2212 t rfon gives the duty factor of the rf biasing portion of the sputter deposition the duty factor is the length of time that the rf biasing is on or active the third equation given above shows that the duty factor of the rf biasing must be at least about 18 of the total deposition time to achieve the structures that are the result of the process of this invention the process of the present invention creates a final structure that has a liner layer present on the sidewalls of a via but not on the bottom of the via in the process of this invention a first layer 10 shown in fig2 a is first deposited by any means known in the art into a via 100 the first layer 10 covers the via 100 the first layer 10 should contain a material capable of lining the via so as to prevent the diffusion of later deposited materials into the insulative layer 12 in this instance the insulative layer 12 lies on a material capable of.