particles and electrons in the charge exchange device collide and the electrons bound to the particles are released from the bound state to increase the valence of particles the charge exchange device of the present invention has a laminate structure of a non woven cnts with a low electron density and a diamond thin film with a high electron density with regard to the non woven cnts with a low electron density the non woven cnts preferably has an electron density of 0 9 u00d7 10 23 cc to 3 u00d7 10 23 cc and more preferably has an electron density of 2 u00d7 10 23 cc to 3 u00d7 10 23 cc also with regard to the diamond thin film with a high electron density the diamond thin film preferably has an electron density of 6 u00d7 10 23 cc to 9 u00d7 10 23 cc and more preferably 8 u00d7 10 23 cc to 9 u00d7 10 23 cc the charge exchange device comprising a laminate of a non woven cnts with a low electron density and a diamond thin film with a high electron density of the present invention can be realized for the first time by a cvd process using the cnts itself being a laminate.