by vapor deposition upon the substrate tape 116 as a result the ion assisted mocvd system 100 of the present invention is capable of producing a ybco film with a thickness in excess of 1 5 microns that has increased material density and smoothness that results in increased current capacity there is no particular orientation requirement for the ion source 132 in relation to zone b rather the orientation is governed by the design of the mocvd reactor 110 because there is an optimum distance between the substrate tape 116 and the showerhead 112 in particular the orientation of the incident ion beam 134 is governed by the dimension of the showerhead 112 and the substrate heater 114 the ion beam 134 from the ion source 132 is not focused upon the substrate tape 116 within zone a of the deposition zone 118 where the ybco film is forming with a thickness that is less than for example 1 0 to 1 5 microns this is because as stated above the quality of the ybco film morphology within the first 1 0 to 1 5 microns of growth is very high and the current capacity is not inhibited although not required to obtain the benefits of the present invention the ion beam may be allowed to impinge upon the substrate in zone a as well ion bombardment may be used within zone a of the deposition zone 118 where the thickness of the ybco film.