a magnetic tunnel junction mram data storage device 500 of the invention in fig5 there is a node wherever a line representing a conductor terminates at another line representing a conductor whereas wherever two such lines cross one another there is not a node the data storage device 500 includes a memory array 505 bit lines 510 digit lines 515 bit line transistors 520 digit line transistors 525 a column decoder 530 for selecting one of the bit lines 510 a row decoder 535 for selecting one of the digit lines 515 bit line current sink transistors 540 a digit line current sink transistor 545 current write transistors 550 temperature dependent write current sources 555 current sinks 560 a logic nor gate 565 and a logic nor gate 570 in addition memory array 505 includes a plurality of mram cells 575 where each mram cell 575 includes a magnetic tunnel junction mtj not shown and a read transistor not shown and each mram cell 575 is disposed proximate to an intersection of one of the bit lines 510 and one of the digit lines 515 each temperature dependent write current source 555 may be either a temperature dependent write current source 300 or a temperature dependent write current source 400.