10 or 15 minutes and most preferably from about 30 sec to about 1 or 2 minutes afford high surface coverage fig3 short times minimize the amount of energy that is used in the processing step it was also a surprising discovery that baking temperatures as high as 400 u00b0 c can be used with no degradation of the molecules fig4 this result is of importance in that many processing steps in fabricating cmos devices entail high temperature processing in certain embodiments preferred baking temperatures range from about 125 u00b0 c to about 400 u00b0 c preferably from about 200 u00b0 c to about 400 u00b0 c more preferably from about 250 u00b0 c to about 400 u00b0 c and most preferably from about 300 u00b0 c to about 400 u00b0 c a further significant point is that diverse functional groups on the information storage molecules are suitable for use in attachment to silicon or other substrates the groups include but are not limited to alcohol thiol s acetylthiol bromomethyl allyl iodoaryl carboxaldehyde ethyne vinyl hydroxymethyl it is also noted that such groups such as ethyl methyl or arene afforded essentially no attachment as demonstrated by the failure to achieve substantial attachment with the zinc chelates of octaethylporphyrin meso tetraphenylporphyrin meso tetra p tolylporphyrin and meso tetramesitylporphyrin the successful attachment via s acetylthiol bromomethyl iodoaryl carboxaldehyde and ethyne is unprecedented the successful attachment via.