a simplified cross section diagram of components of a monolithically integrated inertial sensing device according to one embodiment of the present invention as depicted the sacrificial organic material is then removed by a dry o2 plasma ashing step the removal of the sacrificial material releases the sensor device and forms the 1 st shell of the encapsulation fig1 is a simplified cross section diagram of components of a monolithically integrated inertial sensing device according to one embodiment of the present invention as depicted the 2 nd layer of the encapsulation is deposited onto the 1 st layer the sealing methods include pvd spin on or spray on techniques the sealing materials include metal such as ti tin amorphous silicon spin on glass spray on glass or a combination of the above the ambient during sealing is optimized and controlled to a desired spec that defines the sensor device ambient after sealing a getter material such as ti can be deposited as the 1 st layer of the encapsulation and activated later to achieve high vacuum and cleanness of the sensor ambient environment after sealing the holes an optional cvd dielectric material such as oxide or nitride can be added onto the encapsulation fig1 is a simplified cross section diagram of components of a monolithically integrated inertial sensing device according to one embodiment of the present invention as shown a bond pad structure is formed the bond pad structure can be formed by pattern and etch techniques known in the art but can also be others depending on the application.