plasmas do not etch si sio 2 and al or al alloys an overview of various designs of plasma ashing equipment is discussed by skidmore semiconductor international august 1988 p 54 when dry stripped metallized substrates need to be rinsed or to be put in contact with water the rinsing solutions of the present invention are found to have little or no corrosive effect on the substrates especially not on dry stripped photoresists with aluminium alloy layer the corrosion of aluminium alloys is evaluated in a quartz tank without circulation or filtration both on silicon wafers cz growth lt 100 gt n type 1 30 ohmcm 150 mm diameter wafers with bare aluminium meanders 700 nm al 1 si 0 5 cu and with stacked meanders structures ti tin al 1 si 0 5 cu ti and tin with a thickness of respectively 30 80 700 20 and 80 nm after the photostep and the etching lam tcp 9600 the wafers are stripped in ms 2001 olin hunt for 60 min at 90 c followed by a 50 min stay in a stagnant tank to which diluted inorganic nitric acid hno 3 solutions in two different mixing ratios 1 100 and 1 1000 are added finally the wafers are rinsed with di water for 10 min and spin dried all rinse treatments are performed at room temperature.