element it can be directly beneath or under the other element or intervening elements may be present in contrast when an element is referred to as being u201c directly beneath u201d or u201c directly under u201d another element there are no intervening elements present referring first to fig1 there is illustrated an exemplary semiconductor structure including from bottom to top a handle substrate 10 l an insulator layer 12 l and a silicon layer 14 l collectively the handle substrate 10 l the insulator layer 12 l and the silicon layer 14 l can be referred to herein as a silicon on insulator substrate in some embodiments handle substrate 10 l can be omitted in other embodiments handle substrate 10 l and insulator layer 12 l can be both omitted in such an embodiment in which the handle substrate 10 l and the insulator layer 12 l are both omitted the exemplary structure of fig1 may be a bulk silicon substrate that is entirely composed of silicon layer 14 l in one embodiment the handle substrate 10 l may include at least one semiconductor material that has semiconducting properties examples of materials that have semiconducting properties and thus can be employed as the semiconductor material that provides the handle substrate 10 l include silicon si germanium ge silicon germanium alloys sige silicon carbide sic silicon germanium carbide sigec iii v compound semiconductors and or ii vi compound semiconductors iii v compound semiconductors.