are provided in fig4 and 5 fig4 shows the simulation result of typical prior art active circulator which takes fig1 topology and fig5 shows the new circulator of fig2 and 3 both of the simulations assume that the same n channel depletion type gan hemt is used for the transistors and used designs optimized to maximize power handling capability while maintaining good isolation and insertion loss as much as reasonably possible from fig4 the insertion loss begins to drop around 0 dbm input driving power and isolation gets worse than 20 db from 15 dbm input driving power but in fig5 with the new active circulator disclosed herein being simulated it maintains good insertion loss and isolation by less than 4 db and 20 db each up to 30 dbm input driving power the much higher maximum power handling capability of the new active circulator disclosed herein is due to the advantage mentioned above based on these simulations it is believed that the circulator disclosed herein is a significant improvement over the prior art the three port circulator 100 described with reference to fig2 and 3 can be utilized as a building block to make a four port circulator 200 as shown by fig6 or a five port circulator 300 as shown by fig7 or indeed an n port circulator 400 as shown by fig8 fig9 is an assembly diagram showing one possible way or embodiment of.