thickness uniformity and the sheet resistance uniformity of the thin film but also the uniformity of the resistivity can be improved according to at least one embodiment it is indicated by experimental data that when performing deposition of hard metal using the magnetron provided by the present embodiment for a thin film obtained at high temperature and high pressure gt 5 mt the sheet resistance uniformity is less than 5 and the thickness uniformity is less than 3 for a thin film obtained at room temperature and high pressure gt 5 mt the sheet resistance uniformity is less than 3 and the thickness uniformity is less than 6 both satisfy the process requirements of the present stage further the magnetron provided by the present embodiment not only is suitable for reactive sputtering deposition of hard metal but also can obtain a hard metal thin film with a sheet resistance uniformity less than 3 through sputtering deposition according to another embodiment a magnetron sputtering device is also provided the magnetron sputtering device includes a magnetron chamber a vacuum process chamber a target material a substrate a tray and the above magnetron 100 according to at least one embodiment the tray is provided in the vacuum process chamber an upper surface of the tray is used as a bearing surface for bearing the substrate the magnetron 100 is provided in the magnetron chamber the target material is provided between the magnetron chamber and the vacuum process chamber a back surface of the target material faces the magnetron chamber according to at least one embodiment to improve the sputtering efficiency the magnetron 100 is placed on the back surface of the target material the magnetron 100 includes magnets with opposite polarities that is one or more magnets with opposite polarities form the inner.