holes 200 has a first end 200 a exposed from the first surface 20 a and a second end 200 b opposite to the first end 200 a the semiconductor element 21 has an active surface 21 a and an inactive surface 21 b opposite to the active surface 21 a the semiconductor element 21 is disposed on the first surface 20 a of the interposer 20 u2032 through the active surface 21 a thereof and electrically connected to the first ends 200 a of the conductive through holes 200 through a plurality of conductive elements 210 the encapsulant 22 covers the side surfaces 20 c of the interposer 20 u2032 and encapsulates the interposer 20 u2032 and the semiconductor element 21 the semiconductor package 2 further has an rdl structure 23 formed on the second surface 20 b u2032 of the interposer 20 u2032 and electrically connected to the second ends 200 b of the conductive through holes 200 the semiconductor package 2 further has an rdl structure 201 formed between the semiconductor element 21 and the first surface 20 a of the interposer 20 u2032 and electrically connected to the first ends 200 a of the conductive through holes 200 in an embodiment the second surface 20 b u2032 of the interposer 20 u2032 and the second ends 200 b of the conductive through holes 200 are exposed from a lower surface of the encapsulant 22 in an embodiment the second surface 20 b u2032 of the interposer 20 u2032 and the lower surface of the encapuslant 22 are flush with the second ends 200 b of the conductive through holes 200 in an embodiment the inactive surface 21 b of the semiconductor element 21 is exposed from an upper surface of the.