the phase change memory 300 includes a plurality of cell transistors a plurality of phase change cells and a plurality of resistors each cell transistor has a gate connected to a word line wl the phase change cell is serially connected to the resistor between the drain of the cell transistor and a bit line bl a vertical gate vgate is interposed between two adjacent cell transistors from adjacent phase memory cells that are connected to the same word line wl the vertical gate vgate is in the same layer that of the word line wl and is connected to the word line wl the vertical gate vgate acts as the auxiliary transistor of fig2 a cell pcell indicates one cell includes a phase change cell a resistor and a cell transistor the word line wl in fig3 is connected to the gates of the cell transistors the vertical gate vgate is used as the auxiliary transistor connected to the word line wl and is interposed between the drains of two of the adjacent cell transistors since the vertical gate vgate is connected to the word line wl the shape of the word line wl and vgate together is similar to a comb a plurality of.