of individual chips along the channels application_number US 201113216244 A description a method for manufacturing light emitting chips in accordance with an embodiment of the present disclosure is disclosed the method mainly includes multiple steps as described below as shown in fig1 a substrate 10 is provided the substrate 10 is preferably made of si the substrate 10 has a flat top face for facilitating formation of semiconductor and other layers on the substrate 10 the substrate 10 is provided with a photoresist layer 20 on the top face thereof as shown in fig2 the photoresist layer 20 may be made of positive photoresist material or negative photoresist material depending on the actual requirements the photoresist layer 20 is patterned to form a plurality of individual islands as shown in fig3 the islands of the photoresist layer 20 are spaced from each other by a plurality of gaps 22 between the islands a plurality of areas of the top face of the substrate 10 are exposed to the gaps 22 the method for patterning the photoresist layer 20 may be micro lithography or other suitable technologies as shown in fig4 the substrate 10 is then heated in an environment containing a large amount of oxygen or nitrogen so that the exposed areas of the top face of the substrate 10 are reacted to form.