preferred to high carrier density as high mobility allows for high optical transparency whereas high carrier density reduces optical transparency deposition of our films is at an elevated substrate temperature 100 300 u00b0 c whereas that of significant prior art is at room temperature the tco materials were prepared by the physical vapor deposition pvd technique of r f magnetron sputtering a mixture of zno purity 99 99 and v purity 99 99 powder were combined in precise ratios and used to produce the pressed powder target films were gown by r f sputtering with substrate temperature varying from 100 300 u00b0 c the carrier density mobility resistivity and thickness of the prepared films were determined by well known prior art measuring methods and are shown in fig1 thru 4 all graphs compare data from zno v zno zno al and zno mo films results from the zno v transparent conducting oxide films are indicated by the filled markers wherein fig1 is a graph depicting the ratio of o 2 ar and h 2 ar in which a multivalent dopant v has been incorporated into zno using radio frequency magnetron sputtering pressed powder ceramic targets and a sputter ambient in which the o 2 ar and h 2 ar ratio is shown to bear a clear connection to the carrier density of the formed transparent conducting zno fig2 is a graph depicting the ratio of o 2 ar and h 2 ar for the formed multivalent v doped transparent conducting zno and its corollary electron mobility showing not only the importance of careful control of hydrogen to achieve maximum mobility but that the present process affords higher mobility.