preferably the density of the array of spaced apart trenches should be sufficient to meet the following relationship 1 u2266 u2212 r v tce i tce s e i e s u03c1 i u03c1 s 1 2 e i e s u2212 1 2 u2266 3 2 thus in the event the first material is silicon and the second material is silicon dioxide the ratio r v may have a value in a range from about 0 14 to about 0 42 where tce s e s and u03c1 s for silicon are represented as u2212 52 ppm u00b0 c 169 gpa and 2 33 grams cm 3 respectively and tce i e i and u03c1 i for silicon dioxide are represented as 180 ppm u00b0 c 73 gpa and 2 63 grams cm 3 in addition to the insulator filled array of through body holes 14 some additional degree of temperature compensation may be provided by a thin electrically insulating layer 16 b e g sio 2 which is formed directly on an upper surface of the resonator body 12 this electrically insulating layer 16 b which may remain on the resonator body 12 after the through body holes 14 are filled may have a planarized upper surface conventional techniques may then be performed to deposit.