such as a semiconductive wafer either alone or in assemblies comprising other materials thereon and semiconductive material layers either alone or in assemblies comprising other materials including silicon on insulator soi and bonded wafer configurations for example substrate refers to any supporting structure including but not limited to the semiconductive substrate described above a layer of insulative material 42 such as thermal silicon dioxide is formed upon substrate 40 in the depicted embodiment further photoresist material 44 is patterned upon insulative material 42 as illustrated to form a desired microstructure device feature in the subsequent process steps described below referring to fig1 the silicon dioxide material 42 is patterned using photoresist material 44 of fig1 forming a mask 43 photoresist material 44 has been stripped from assembly 30 in fig1 referring to fig1 a plurality of trenches 46 are formed within substrate 40 as defined by mask 43 trenches 46 are formed within substrate 40 using reactive ion etching in one example the depicted trenches 46 are deep trenches individually having a depth of approximately 5 50 microns and a width of approximately 0 25 5 microns individual trenches 46 include plural sidewalls 47 and a bottom surface 49 referring to fig1 mask 43 comprising the insulative material 42 is etched from substrate 40 of assembly 30 following the formation of deep trenches 46 referring to fig1 a layer of conductive material 48 is provided over substrate 40 according to the described embodiment conductive material 48 comprises titanium nitride tin an exemplary cvd process of titanium nitride is performed at.