hand a first passivation layer 129 made of an insulating material particularly silicon oxide sio 2 or silicon nitride sinx which is an inorganic insulating material is formed on the active area a a of the substrate including the second electrode 127 the first passivation layer 129 is formed since moisture infiltration into the organic light emitting layer 125 cannot be blocked only with the second electrode 127 and thus the first passivation layer 129 performing a protective role is formed on the second electrode 127 to minimize moisture infiltration into the organic light emitting layer 125 furthermore the gip thin film transistor tr 2 on the gip area g a has a similar layer structure to that of the driving thin film transistor tr 1 on the active area a a from the semiconductor layer 103 to the first passivation layer 129 but has a structure in which the first and the second electrode 121 127 and organic light emitting layer 125 are omitted on the contrary the bending area b a has a difference in that the gate insulating layer 105 interlayer insulating layer 109 planarization layer 115 and the like excluding the auxiliary line 120 as well as the foregoing thin film transistors tr 1 tr 2 are not formed thereon on the other hand an organic layer 141 made of a polymeric organic material such as a polymer is formed on the first passivation layer 129 of the active area a a here an olefin based polymer polyethylene polypropylene polyethylene terephthalate pet epoxy resin fluororesin polysiloxane and the like may be used for a polymer layer constituting an organic layer 131 furthermore in order to block moisture.