is a dielectric constant s is an electrode area d is a thickness of a capacitor dielectric film according to the equation capacitance can be increased if the dielectric constant is increased the electrode area is increased or the thickness of a capacitor dielectric film is reduced hence it is possible to change a material relevant to these factors and the film constitution to increase the dielectric constant various materials are tested as another possibility a ferroelectric film or a high dielectric film may be used alternatively an sio 2 silicon oxide film and an si 3 n 4 silicon nitride film conventionally used and a multilayered structure of these films may be employed in embodiments 1 and 2 aluminium is used as the material for the buried conducting layer used in the contact hole on the capacitor upper electrode cell plate 15 b tungsten is used as the material to be used in the contact hole on the conducting layer second wiring layer 10 b formed in the peripheral circuit region low resistivity intrinsic to aluminium and good buriability to tungsten are preferentially adapted to the requirement for each of contact holes other materials will be applicable furthermore it is easy to modify embodiments in various ways as mentioned below to increase capacitor electrode area various shapes of the electrode may be employed other than a cylindrical form shown in embodiments examples of the shapes include a thick film form.