avalanche photodiode of the embodiment 1 was simulated based on the film thicknesses and carrier densities shown in table 1 and the performance of the avalanche photodiode of the comparative example was simulated based on the film thicknesses and carrier densities shown in table 2 the results of this simulation are based on calculation made using a field assumed to cause a multiplication of about 10 in the alinas multiplication layer 6 in the embodiment 1 as shown in table 1 and fig3 the insertion of the ingaas multiplication suppressing layer 3 makes thinner the i type ingaas light absorbing layer 4 to which a high field is applied than a conventional light absorbing layer while the i type ingaas light absorbing layer 4 and the p type ingaas multiplication suppressing layer are made to have a total thickness above a fixed level specifically in the avalanche photodiode of the embodiment 1 the i type ingaas light absorbing layer 4 to be depleted is formed in a thickness more than a fixed level on the field limiting layer 5 side and the p type ingaas multiplication suppressing layer 3 which is a non depletion semiconductor light absorbing layer to be undepleted is formed on the opposite side thereby forming the light absorbing layer from the i type ingaas light absorbing layer 4 to be depleted and the p type ingaas multiplication suppressing layer.