a the pattern element 84 is shown to be approximately 45 nm wide the sub resolution assist elements 90 are therefore approximately 15 nm wide when the sub resolution assist elements 90 are only 15 nm wide no residue or pattern is left or created on the semiconductor wafer 88 but with the current e beam technology the creation of a sub resolution assist element 90 with such a narrow width is not feasible or controllable and therefore the option depicted in fig7 a is not yet available to make a mask according to the current e beam writing technology the width of the smallest pattern element is approximately 35 nm fig7 b illustrates sub resolution assist elements 90 u2032 that approximate this obtainable width wherein like primed reference characters represent elements similar to the elements in fig7 a these sub resolution assist elements 90 u2032 are not however sub resolution as they leave a residue 92 on the semiconductor wafer alongside the desired pattern 86 u2032 therefore making sub resolution assist elements 90 u2032 with a normal profile i e with perpendicular pattern sides 94 will result in an undesirable result of having a pattern of residue 92 on the semiconductor wafer 88 u2032 where it is not desired using the technology of the tapered sides as discussed above the sub resolution assist elements 90 u2033 can be created wherein like double primed reference characters in fig7 c represent elements similar to those in fig7 a in this instance the sub resolution assist elements 90 u2033 can be.