registor the aluminum light shield 12 is formed on the n diffusion layer 2 for the shift register and the transfer gate region 5 clock signals u03c6 1 u03c6 2 u03c6 3 and u03c6 4 as shown in fig2 are applied to the polysilicon electrodes 10 7 8 and 9 respectively the clock signals u03c6 1 u03c6 2 u03c6 3 and u03c6 4 have three signal levels v l v i and v h when the clock signal shows the signal level v l or v i signal charges condensed in the shift register element are transfered in the direction a of fig1 a upward when the clock signal shows the signal level v h signal charge condensed in the photodiodes 3 are transfered to the adjacent shift register element via the transfer gate region 5 horizontally in the ccd image sensor having the above construction the electrodes of the shift register elements are provided for wiring on the p type semiconductor substrate between neighboring photodiodes when the clock signals applied to the shift register elements shows a high signal level the channel stopper 4 is needed to provide under the wiring to prevent a charge mixing or crosstalk between the neighboring photodiodes because the channel stopper 4 are prepared by different steps variations in characteristics owing to masking slips are produced an embodiment of the present.