obtained with other insulating blocking layers in combination with different anodes moreover zno leds with the mism layout can also be fabricated in an inverted structure an example would be zam deposited onto p type si with a few nm thick sio x oxide layer in this section we present electrical characteristics of mism zno diodes current voltage characteristics and electroluminescent spectra for sapphire ito zam mgo au diode are given in fig1 a 10 b the i v characteristic of the device measured in dark shows that the diode is rectifying the rectification ratio however is not large due to the leakage current the primary target here is demonstration of a functional diode and electroluminescence a photo detector photo diode was placed over the zno diode to record the light emission of the device in dark we measured light with the photo diode the power dissipated in the zno led was less than 0 5 w hence just not enough to record a measurable black body radiation we measured the electroluminescent of the zno led in forward bias of 10 v the current running through device was 50 ma an el spectrum of the device is given in fig8 the pl spectrum of the zam is also presented as a reference fig1 a 10 b show nice matching of the el spectrum of the zno led with the pl of the.