of silicon gaas glass quartz gap gaasp algaas and metal or other substitute materials the second substrate 13 comprises at least one material selected from a material group consisting of al 2 o 3 sic zno and gan the transparent adhesive layer 121 421 521 comprises at least one material selected from a material group consisting of pi bcb and pfcb the first reaction layer 120 420 520 comprises at least one material selected from a material group consisting of sinx ti and cr the second reaction layer 122 422 522 comprises at least one material selected from a material group consisting of sinx ti and cr the metal heat sink 20 501 comprises at least one material selected from a material group consisting of sn al au pt zn ag pb pd ge cu aube auge ni pbsn and auzn or other substitute materials the metal reflecting layer 11 41 51 comprises at least one material selected from a material group consisting of in sn al au pt zn ag pb pd ge cu aube auge ni pbsn and auzn the nitride first cladding layer 150 450 550 comprises at least one material selected from a material group consisting of aln gan algan ingan and alingan the nitride light emitting layer 151 451 551 comprises at least one material selected from a material group consisting of gan ingan and alingan the nitride second cladding layer 152 452 552 comprises at least one material selected from a material group consisting of alngan gan algan ingan and alingan in addition the nitride first contact layer 14 44 54 or the nitride second contact layer 16 46 56 can comprise at least one material selected from a material group consisting of gan ingan and algan the transparent.