of carbon 152 while allowing some gasses formed by the decomposition of the photoresist layer 142 to escape the beam 148 was de energized at the end of the five minutes and the form of carbon 152 was allowed to cool as the form of carbon 152 cooled it precipitated and or coalesced into one or more graphene layers 154 see fig6 for purpose of this example the quartz substrate 140 and quartz wafer 146 were then moved by the high precision piezoelectric stage and a dc motorized stage to expose a different portion of the photoresist layer 142 to the beam 148 the high precision piezoelectric stage and dc motorized stage allow for precise positioning of the quartz substrate 140 and quartz wafer 146 with respect to the beam 148 accordingly a pattern discussed below of one or more graphene layers 154 was formed to better understand the formation process of the one or more graphene layers 154 optical images were taken with an optical microscope olympus bx40 with reflected light illumination and atomic force microscopy afm images were taken using an afm veeco dimension 3100 with the tapping mode under ambient conditions raman spectroscopy and mapping was performed using a laser micro raman systems xplora with laser excitation at 532 nm equipped with a motorized sample stage a 100 u00d7 objective lens was used and laser spot size was u02dc 0 6 u03bcm for raman spectroscopy the accumulation time was 20 seconds and for raman mapping each spectrum was an average of 3 acquisitions 3s of accumulation time per acquisition fig7 shows an optical micrograph of a 4 u00d7 4 laser processed area of the quartz substrate 140 with a pattern 160 of one or more graphene layers 154 with a spacing of 250 u03bcm horizontally.