comprises at least a surface layer 32 having a comparatively low doping concentration of between 10 15 and 10 16 acceptor atoms per cm 3 this layer may cover the whole thickness of the semiconductor body but in another important embodiment it may also be provided as a comparatively high ohmic layer having a thickness between 5 and 10 u03bcm on a low ohmic p type substrate 33 having a doping concentration between 10 19 and 10 20 atoms per cm 3 as is known this construction of the semiconductor body has the advantage that the leakage currents can be restricted in fig2 to 4 this possible composition is indicated by the broken lines separating the epitaxial layer 32 from the substrate 33 the ccd channels 1a and 1b of the parallel section c and the channel of the output register b are defined in the p layer 32 as well as the input register a not shown in the figures for this purpose the surface of the semiconductor body has a field oxide pattern 2 shown in broken lines in fig1 which covers a large part of the surface and has openings at the area of the channels 1a 1b a and b of course the field oxide pattern 2 may also have openings outside the part shown in the figures in places where peripheral circuits are provided the field oxide pattern 2 the thickness of which may be between 0 5 and 1 u03bcm is formed in the present embodiment by means of local oxidation of the silicon body in order to prevent stray channel formation the doping concentration below.