may reside in the cmos substrate wafer accordingly this or any similar process can be utilized to fabricate a mems resonator and a mems device on the same substrate in an embodiment the mems resonator may form the basis of a timebase for the mems device that has superior characteristics when compared to alternative integrated timebases that are well known in the art examples of alternative integrated timebases include r c oscillators and l c oscillators which employ passive electrical components as resonators such oscillators typically exhibit high noise and large frequency tolerance when compared to mems resonator based oscillators thus the integration of a mems resonator with a mems device allows for the operation of that device with a lower noise and smaller frequency tolerance than is available with alternative techniques in addition a mems resonator integrated with a mems device can be made to possess characteristics corresponding to the mems device in beneficial ways for example with reference to fig2 the aforementioned mems device may possess a gain versus frequency characteristic 200 exhibiting a gain peak 220 to achieve high gain it is advantageous to operate the mems device at a frequency near the gain peak 220 one method of achieving such operation would be to construct a resonator with gain versus frequency characteristic 210 possessing a gain peak 230 positioned in proximity to the gain peak 220 however a mems device may exhibit frequency shifts according to changes in manufacturing process voltage and temperature that may be large enough to cause gain peak 220 to shift away from resonator peak 230 so that the desired proximity cannot be.