in the substrate stage 101 a semiconductor substrate 120 to be processed is held on the upper surface of the substrate stage 101 a shower head 104 is disposed above the substrate stage 101 carrier gas e g h 2 gas and liquid source material of cu is supplied to a carburetor 105 trimethylvinylsilyl hexafluoroacetylacetonate copper i hereinafter expressed as u201c cu hfac tmvs is used as cu source material cu liquid source material is vaporized in the carburetor 105 and supplied to a gas flow path 110 together with the carrier gas carrier gas e g h 2 gas and mn source material is supplied to a mass flow controller mfc 106 bismethylcyclopentadienyl manganese ch 3 c 5 h 4 2 mn is used as mn source material mn source material is vaporized in mfc 106 and supplied to a gas flow path 111 together with the carrier gas purge gas e g h 2 gas is supplied to a gas flow path 112 the three gas flow paths 110 111 and 112 become confluent at a confluent point 115 and thereafter are connected to the shower head 104 valves 116 117 and 118 are inserted into the three gas.