which can be a plurality of inlets spaced about the interior of the chamber 100 and a pump 126 for controlling the chamber pressure the coil inductor 118 is energized by a plasma source power supply or rf generator 128 through a conventional active rf match network 130 the top winding of the inductor coil 118 being u201c hot u201d and the bottom winding being grounded alternatively a flat coil can be used the substrate support electrode 114 includes an interior conductive portion 132 connected to a bias rf power supply or generator 134 and an exterior grounded conductor 136 which is insulated from the interior conductive portion 132 a conductive grounded rf shield 120 surrounds the coil inductor 118 to carry out the present process the source power is turned on and a fluorocarbon or hydrofluorocarbon processing gas is passed into the chamber 100 from the desired gas containers not shown the fluorocarbon gas deposits a polymer onto the photoresist layer to protect it during the multiple etch steps to follow the power to the chamber 100 from the inductive rf power source 128 is suitably from about 200 up to about 3000 watts and is preferably from about 500 to 2000 watts the rf source can be a 12 56 mhz power source no bias power is.