second polarization accumulators in fig1 are replaced by a common electrode 118 the rest of the structure is the same as in fig1 with the structure in fig2 since the common electrode 118 is wide and made of platinum pt the ferroelectric thin film 111 placed on it and made of pztn has an affinity with the crystal axis of the platinum of the lower electrode this facilitates crystal growth resulting in highly reliable ferroelectric crystals with excellent electrical characteristics and thus makes the polarization transfer device a more reliable product with a higher production stability than the first embodiment in fig1 fig2 is a diagram showing a seventh example of signal waveforms applied to the polarization transfer device shown in fig2 via the control signal lines signal waveforms of u03c6 1 u03c6 2 u03c6 3 u03c6 4 u03c6 5 and u03c6 6 are shown in intervals a 2 b 2 c 2 d 2 e 2 and f 2 in fig2 and states of the polarization transfer device in fig2 in the intervals a 2 to f 2 are shown in fig1 a 2 17 b 2 17 c 2 18 d 2 18 e 2 and 18 f 2 respectively fig2 differs from fig2 the first example of control signals in u03c6 5 and u03c6 6 specifically the respective lower electrodes 113 114 and 115 of the first second and third polarization switches as well as the respective lower electrodes 116 and 117 of the first and second polarization accumulators in fig1 are replaced in fig2 by the common electrode 118 which is fixed at the ground potential of 0 consequently u03c6 5 and u03c6 6 in fig2.