118 and the auxiliary capacitance electrode 119 the source electrode 117 s the drain electrode 117 d the data bus line 118 and the auxiliary capacitance electrode 119 are coated with a second insulating film 120 made of sio 2 sin or the like the picture element electrode 121 is formed on the second insulating film 120 the slits 121 a extending obliquely are formed in the picture element electrode 121 so as to act as the structures for defining domains as mentioned above the picture element electrode 121 is electrically connected to the source electrode 117 s and the auxiliary capacitance electrode 119 via the contact holes 120 a and 120 b formed in the second insulating film 120 a transparent conductor film made of ito or the like is formed on the second insulating film 120 and then subjected to patterning using photolithography to form the picture element electrode 121 the surface of the picture element electrode 121 is coated with a vertical alignment film not shown made of polyimide or the like a black matrix 132 or a light shield film a color filter 133 a common electrode 134 and a bank shaped projection 135 for defining domains are formed on one surface e g a bottom surface as shown in fig1 of a glass substrate 131 which forms a base of the opposite substrate 130 the black matrix 132 is located opposite to the gate bus line 112 the data bus line 118 the auxiliary capacitance bus line 113 and the tft 117 on the tft substrate 110 the color filters 133 are of three types red green and blue either the red green or blue color filter is provided for each picture element region a pixel is composed of three picture.