u201d type structural transformation 1202 is then electrically induced the gap between wire 1202 and the electrodes 1201 is optionally filled with an insulator 1203 the insulator 1203 may be used to provide an additional mechanical stability of the u201c wire u201d 1202 in the structure finally the semiconducting material 1204 is deposited on top the structure the semiconductor 1204 acts as the channel between the u201c drain u201d and u201c source u201d contacts 1201 in a field effect transistor topology the gate controlling the channel is formed by the u201c wire u201d 1202 the central advantage of the structure is that the narrow linewidth structure can be fabricated without high precision lithography the small linewidth is critical for achieving a high performance transistor speed operation voltages etc fig1 shows a top view of a preferred method for further realization drain and source electrodes in the transistor structure described in fig1 here the gate contacts 1301 are first deposited then the nanoparticle material 1302 is deposited on selected locations next the u201c wire u201d 1303 is electrically induced finally the source and drain electrodes 1304 are created using electrical sintering based on e g vertical that is through the substrate penetrating ac field on the desired locations the remaining nanoparticle material between the gate contacts 1301 and the source drain contacts 1304 can either remain in case of being sufficiently insulating in the non sintered phase or can be selectively removed e g using chemical etchant attacking the matrix material in the nanoparticle array another example of.