of the digital beam include those described herein in certain embodiments the at least one layer comprises a thickness of two to four unit cells for example the at least layer can have a thickness of three unit cells in certain embodiments the at least one layer comprises a layer of la 3 o 2 u2212 in further embodiments the at least one layer comprises a layer of al 3 o 2 4 u2212 the at least one layer can be annealed for example the at least one layer can be annealed at a temperature of about 800 u00b0 c to about 900 u00b0 c fig5 illustrates an example embodiment in which a layer of laalo 3 501 is deposited on a bulk substrate 503 for example a three unit cell laalo 3 layer can be deposited by ald onto the bulk substrate srtio 3 505 can then be deposited onto the laalo 3 layer to form an array of multi component oxide heterostructures fig6 illustrates a schematic diagram of an example embodiment of a process for patterned ald growth of laalo 3 601 with a first precursor including al to form an al 3 o 2 4 u2212 layer 605 and a second precursor including la to form a la 3 o 2 u2212 layer 607 onto srtio 3 603 to form an array of mcoh in some embodiments other mcoh materials such as lavo 3 can also be grown on various substrates such as srtio 3 and laalo 3 using these dbp methods fig7 a f are schematic diagrams of an example embodiment of a process for.