memory 104 passes testing in step 282 the memory 104 is determined to be repaired in step 284 if step 282 is false step 276 determines that the memory 104 is not repairable the present disclosure can be applied to any memory technology that implements addressed memory locations for example the present invention can be applied to memory technologies including but not limited to random access memory ram dynamic random access memory dram static random access memory sram magnetic ram mram read only memory rom programmable read only memory prom electrically programmable read only memory eprom electrically erasable programmable read only memory eeprom and or flash memory as well as any derivative of the above memory technologies such as fast cycle ram fcram referring now to fig9 a 9g various exemplary implementations incorporating the teachings of the present disclosure are shown referring now to fig9 a the teachings of the disclosure can be implemented in nonvolatile memory of a hard disk drive hdd 300 the hdd 300 includes a hard disk assembly hda 301 and an hdd printed circuit board pcb 302 the hda 301 may include a magnetic medium 303 such as one or more platters that store data and a read write device 304 the read write device 304 may be arranged on an actuator arm 305 and may read and write data on the magnetic medium 303 additionally the hda.