threshold voltage of fet 38 the latter turns on and causes fet 50 to provide a shunt current path through diode 53 around resistor 46 this may be seen in fig4 at the vertical dashed line 91 and the horizontal dashed line 95 with the 1k resistance of resistor 46 shunted only the 100 ohm resistance of resistors 21 is left in the gate charging circuit for fets 15 18 the tenfold increase in charging current greatly increases the speed of the switching process through the active conduction region of the fets for minimum power dissipation therein and the drain to source voltage v ds falls rapidly to its saturation level as seen in fig4 as already mentioned this occurs only after the freewheeling diodes have recovered and are reverse biased whereby the voltaqe transients produced are much lower in radio frequency components and rfi is reduced it may be seen in fig3 that voltage v ds for the prior art falls much more slowly and does not reach its saturation level until the time shown by vertical dashed line 92 this causes significantly greater power dissipation and consequent heat generation as the voltage across fets 15 18 continues to fall toward its saturation.