preferably at a temperature lt 200 u00b0 c and most preferably at a temperature lt 100 u00b0 c all the temperatures specified here refer to boiling points at a pressure of 1013 hpa the sintering step is carried out at the specified temperatures until a continuous conducting path has been formed the duration of the sintering step is preferably 1 minute to 24 hours particularly preferably 5 minutes to 8 hours and most particularly preferably 2 to 8 hours the new method can be used in particular for the production of substrates that comprise conducting structures on their surface that in one dimension have a length of not more than 1 u03bcm preferably 1 u03bcm to 50 nm and particularly preferably 500 nm to 50 nm in which the conducting material is preferably a suspension of conducting particles as described above and the substrate is preferably transparent for example of glass ceramics semiconductor material or a transparent polymer as described above the invention is described in more detail hereinafter by way of example and with reference to fig1 which shows diagrammatically the spinning arrangement according to the invention the following apparatus see fig1 was used for spinning the spinning solution the holder 1 for the substrate 9 which is a silicon disc and the metallic holder 13 for the spinning capillary 2 which is provided with a liquid reservoir 3 for the spinning solution 4 and is connected to an electrical voltage supply 5 the voltage source 5 supplies d c voltage up.