transistor at the region a and a gate electrode 206b of the esd transistor 206b at the region b respectively here with the forming of the gate electrodes 206a 206b a dummy gate electrode 206c is formed on the first impurity layer 204 being separated from the gate electrode 206b of the esd transistor the dummy gate electrode 206c prevents a silicide from being formed on the drain of the esd transistor in a following silicide forming process in other words in the fabrication of the semiconductor device according to the preferred embodiment of the present invention the silicide blocking portion that is the dummy gate electrode 206c is formed before fabricating the transistor thereby preventing change of characteristics of the transistor also since the silicide blocking portion the dummy gate electrode 206c is formed simultaneously with the forming of the internal circuit and esd transistor gate electrodes the fabrication process thereof becomes simpler compared with that of the conventional art next a second impurity layer 207 is formed by implanting n type impurity ions into the semiconductor substrate 201 using the gate electrodes 206a 206b and the dummy gate electrode 206c as masks the second impurity layer 207 having shallower depth and lower density than a third impurity layer 209 which is to be formed in a following process the second impurity layer 207 is generally called a lightly doped drain ldd as shown in fig4 c a silicon nitride which serves as an insulating film is formed on the resultant surface of the semiconductor substrate 201 and sidewall spacers 208 are formed at side.