in fig1 c 1d the anti oxidation layer 23 comprises a layer of gold 23 a and a layer of nickel 23 b of course other materials may be employed the layer of gold 23 a may have a thickness of approximately 2 5 u03bcm while the layer of nickel 23 b may have a thickness of approximately 0 3 u03bcm fig2 a 2b schematically depict the reduced pitch between adjacent conductive structures that may result by use of the piercing bond structures 22 disclosed herein fig2 a schematically depicts an illustrative conductive bond structures 90 that are commonly formed using known techniques the conventional bond structures 90 have a substantially planar upper or contact surface 92 in fig2 a the width of the contact surface 92 is designated u201c a u201d the width of the sloped sidewalls 94 due to the isotropic nature of the etching process used to form the structures 90 is designated as u201c b u201d and the spacing between the structures 90 is designated as u201c c u201d thus the pitch u201c p u201d for the conductive structure 90 would be a 2b c in contrast the pitch u201c p 1 u201d between the piercing bond structures 22 shown in fig2 b would be equal to 2b c in short using the techniques and piercing bond structures 22 disclosed herein the pitch between conductive bonding structures like the piercing bond structures 22 disclosed herein may be substantially less as compared to prior art devices that employ bonding structures having a substantially planar or non piercing upper surface 92 as shown in fig2 a for.