5 degrees for performing the process of crystallization container 2 is loaded with a pre synthesized raw material u2014 the solid solution of bismuth telluride and required additives in a pre determined weight ratio with the temperature of cooled pedestal 4 controlled directed heat rejection from graphite planes 5 is exercised in the process of crystallization the growth setup chamber not shown is vacuumized to the pressure of 10 u2212 2 mm hg whereupon argon is introduced and heating is switched on container 2 with a synthesized material is heated for 1 hour up to the temperature of 850 u00b0 c and exposed for 30 minutes at the above temperature for homogenization of the melt whereupon container 2 is additionally heated up to the temperature of 950 u00b0 c heating of the synthesized material in container 2 is accompanied with flowing of the melted material from container 2 into inlet channels 8 of graphite plates see fig2 and farther on in cavities 6 and seeding channel 7 of graphite plates 5 then the heater temperature is reduced as the temperature is being reduced the crystallization process spreads on channel 7 and the entire volume of cavity 6 the process of crystallization.