shown may be used to protect non fuse regions of the structure 200 during the deposition of the insulating layer 226 next a fill material 228 may be deposited on top of the insulating layer 226 substantially filling the dual damascene feature 216 fig3 the fill material 228 may include any suitable metal or dielectric material known in the art in one embodiment the fill material 228 may preferably include a material that which is consonant with current process flows the fill material 228 may be deposited using any suitable deposition technique known in the art such as physical vapor deposition atomic layer deposition plasma enhanced atomic layer deposition plasma enhanced chemical vapor deposition or chemical vapor deposition in one embodiment for example the fill material 228 may include copper deposited using a chemical vapor deposition technique alternatively in another embodiment the fill material 228 may include a dielectric material similar to the m x dielectric 204 or the m x 1 dielectric 214 as described above a chemical mechanical planarization technique may subsequently be used to remove excess material of the insulating layer 226 and the fill material 228 from a top surface of the m x 1 dielectric 214 lastly an m x 1 cap dielectric 230 may be deposited above the structure the m x 1 cap dielectric 230 may be substantially similar in all respects to the m x cap dielectric 210 described above with continued reference to fig6 the final e fuse structure is shown therefore the first m x metal 206 the first via 222 the fuse line 208 the second via 224 and second m x metal 208 may together form the final e fuse structure the e fuse structure may further include the.