store time segment 40 the voltage between the gate node 12 and the storage node 100 is u2212 v pp u2212 v dd 90 as one possible alternative instead of keeping the gate node 22 at v pp 80 the gate node 22 may be at v dd 60 during the write time segment 30 and pulsed to v pp during the store time segment 40 as illustrated in fig5 a voltage driver 25 is used to provide the voltage pulse from v dd to v pp on gate node 22 during the store time segment 40 during the write time segment 30 the pass fet 10 is turned on by a read write voltage which is at a voltage potential of v dd 60 after the data bit voltage 70 is written to the storage node 100 the voltage driver 25 pulses the node gate 22 from v dd to v pp to create a storage node potential of v pp u2212 v dd as a result the leakage current is reduced similarly to the case shown in fig4 and the charge time is again extended to about 100 microseconds from 1 microsecond when v pp u2212 v dd is 200 millivolts applying a constant potential of v pp 80 during the write time segment and store time segment is.