been found that the inert gas which is admitted to the reactor preferably has its pressure adjusted so that the pressure within the reactor will be within the range between about 200 and about 600 microns in order to obtain reproducible results in most of the experiments performed argon has been the preferred inert gas since it will not react with any of the components within the reactor nor with any of the materials of which the reactor is made yet it will supply the necessary plasma to sustain the thin film transfer of the components to the substrate in the desired stoichiometrical ratio with the inert gas pressure regulated to the value set forth hereinbefore the substrate is then heated to a temperature not in excess of about 1000 u00b0 c while substantially lower temperatures can be used and temperatures as low as those of liquid nitrogen can be employed where other suitable precautions are taken as will be set forth hereinafter best results have been secured with the substrate at a temperature within the range between about 700 u00b0 c and about 950 u00b0 c with the substrate heated to this temperature the substrate and target components within the reactor are connected to a source of dc power with the substrate being the anode and the target being the cathode and said dc power is regulated by controlling the voltage to a value within the range between about 600 and about 1000 volts and the cathode current density is regulated to a range within about 10 and about 50 milliamps per square inch employing these conditions sputtering will take place wherein the target materials are transferred to the substrate it is believed that the mean free path of the target materials.