elements term u201c microwire u201d or u201c nanowire u201d designates a three dimensional structure having an elongated shape along a preferred direction having at least two dimensions called minor dimensions in the range from 5 nm to 2 5 u03bcm preferably from 50 nm to 2 5 u03bcm the third dimension called major dimension being at least equal to 1 time preferably at least 5 times and more preferably still at least 10 times the largest minor dimension in certain embodiments the minor dimensions may be smaller than or equal to approximately 1 u03bcm preferably in the range from 100 nm to 1 u03bcm more preferably from 100 nm to 300 nm in certain embodiments the height of each microwire or nanowire may be greater than or equal to 500 nm preferably in the range from 1 u03bcm to 50 u03bcm in the following description term u201c wire u201d is used to mean u201c microwire or nanowire u201d preferably the median line of the wire which runs through the centers of gravity of the cross sections in planes perpendicular to the preferred direction of the wire is substantially rectilinear and is called u201c axis u201d of the wire hereafter fig8 a and 8b are cross section views of an embodiment of an optoelectronic device 45 comprising light emitting diodes and mos transistors formed in integrated fashion optoelectronic device 45 may be used to form the above described optoelectronic circuits 30 and 40 in fig8 a and 8b only general light emitting diodes d 1 d 2 have been shown further a single elementary light emitting diode has been shown as an example for each general light emitting diode d 1 d 2 a semiconductor substrate 50 non doped or lightly doped with a first.