116 is covered by the p electrode 117 which is consisted of highly reflective cu and by reflecting the emitted light the light is prevented from leaking from the p electrode 117 side the reflected light can be extracted from the light extraction surface and used for illumination and so on by forming the periodical structure a 2 diffuse reflection can be promoted and hence the reflectance on the interface between the contact layer 116 and the p electrode 117 can be improved as a result the amount of light that is ultimately extracted from the light extraction surface of the semiconductor light emitting element 110 can be increased enabling an improvement in the light extraction efficiency to approximately 1 3 times the normal light extraction efficiency next a fabricating method for the semiconductor light emitting element 110 will be described first the substantially plate form substrate 111 is prepared the low temperature deposition buffer layer 112 is then formed at a predetermined thickness by growing algan uniformly on the front side of the substrate 111 using a metal organic chemical vapor deposition method in a similar fashion the cladding layer 113 is formed on the low temperature deposition buffer layer 112 and the light emitting layer 114 is formed on the cladding layer 113 the barrier layer 115 is then formed on the light emitting layer 114 whereupon the contact layer 116 is formed by growing p gan on the barrier layer 115 after depositing the various layers in the manner described above a similar covering layer to that of fig5 is formed on the surface of the contact layer.