45 v and u 4 1 05 v are reached at point 10 which produce a voltage swing of 0 6 v this is sufficient to switch the transistors 12 and 13 completely this ideally results in a value of 1 5 or 0 v for the voltages u 5 and u 6 which means that the voltage swing is u03b4u u2032 1 5 v this is then sufficient to switch the pass transistor 1 the large difference between u 2 and u 1 of 1 2 v can be achieved only by the dual cells 5 and 4 normally a voltage of no more than 600 mv can be applied to a tmr cell without destroying it the use of the dual cells 4 and 5 therefore in principle allows this voltage which can be applied to be doubled fig2 shows the basic design and the actuation of the second switching group 3 from fig1 for better comparison fig3 shows the associated circuit diagram which can be fitted into fig1 in fig2 the respective voltages u 2 and u 1 are applied on the right and on the left the voltage u 3 or u 4 is tapped off according to the switching state the tmr cells 6 and 7 and 8 and 9 are respectively connected in series the data line 15 forms the switching line for the tmr cells as can be seen from the progression of the line 15.