the on resistance then a field oxide film 45 is formed by patterning with an oxide film deposited by cvd after dry oxidation after contact holes for forming schottky junctions are formed tisi 2 is formed as a schottky electrode 43 by sputtering a pad electrode not shown is formed on the schottky electrode 43 such that an sic schottky barrier diode is completed when the schottky barrier diodes manufactured as described above were inspected nondefective products could be obtained at a yield of over 85 moreover when a breakdown voltage was measured in a state heated to 150 u00b0 c in the measurement of reverse electric properties the leakage current was 6 ma cm 2 or less even if a voltage was applied up to a predetermined level of 1200 v an avalanche current was observed when the voltage was further increased to 1300 v further when ions were implanted into the part 48 between the adjacent junction barriers 46 the on resistance decreased providing effects as expected in addition no collateral adverse effects were observed such as the increase of the leakage current as reverse characteristics thus in addition to the effects in the first embodiment according to the third embodiment nitrogen.