carbon containing titanium nitride film is measured to be 30 to 50 u03c9 in this case as compared with the conventional titanium nitride film which does not contain carbon the electrical characteristics of the titanium nitride film which contains carbon are not degraded the substrate may be heated to 400 u00b0 c to 500 u00b0 c during deposition of the titanium film to convert titanium into titanium silicide thereafter a carbon containing titanium nitride film may be deposited alternatively a titanium silicide film may be directly deposited in place of the titanium film the same contact resistance characteristics as described above can be obtained when a cobalt film is used in place of the titanium film the same contact resistance characteristics as described above can also be obtained when a titanium silicide film or a cobalt silicide film is used fig5 shows a structure wherein the semiconductor device of the present invention is applied to an lsi having a cmos structure 500 u00e5 thick titanium film 33 this film is converted into a titanium silicide film after deposition at a substrate temperature of 500 u00b0 c 1 000 u00e5 thick titanium nitride film 34 prepared by chemical sputtering using a titanium target while a nitrogen argon propane plasma is generated at an n 2 ar ch 4.