sidewall of the silicon hole portion 339 through a gate dielectric film 328 the n type ccd channel region 311 is formed in a top surface of the p type well region 320 and in a part of an upper region of the remaining part of the sidewall of the silicon hole portion 339 and the read channel 304 is formed in a region of the p type well region 320 sandwiched between the n type photoelectric conversion region 322 and the n type ccd channel region 311 in the solid state image pickup element having the p type region 302 the silicon hole portion 331 is formed in the p type well region 320 to define a hole therein the p type region 302 is formed in a bottom wall of the silicon hole portion 331 and the p type element isolation region 307 is formed in a part of a sidewall of the silicon hole portion 331 in connected relation to the p type region 302 an n type photoelectric conversion region 323 is formed in a portion of the p type well region 320 located beneath the p type region 302 and in a part of a lower portion of the sidewall of the silicon hole portion 331 and the transfer electrodes 317 318 are also formed on the sidewall of the silicon hole portion 331 through the gate dielectric film 328 the n type ccd channel region 311 is.