is implemented to change the state of the resistive switching component 102 of the memory unit and thus enables the conducting current of the transistor of the memory unit is larger relative to the reference current value this state of the resistive switching component 102 is defined as 0 the definition of 0 or 1 is used for identifying the relative storage state of the memory unit resetting refers to that the memory unit can be operated to a storage state 1 setting refers to that the memory unit can be operated to a storage state 0 and reading refers to an operation manner which can read out the storage state 0 or 1 of the memory unit forming refers to that the operating unit can be set to a storable and operable state when it is desired to write information into a certain memory block of this memory circuit if no operation has been performed to the memory page or a forming operation is needed for setting the memory page into an operable state according to the characteristics of the resistance changeable component 102 in the memory unit it is not necessary to perform the forming operation if it is desired to write information into a certain memory block of the memory circuit a resetting operation is first performed to set all of the memory units in the entire memory block into 0 wherein a certain memory block is selected through the bit line selecting driving circuit blsd and the ground line selecting driving circuit glsd such that the control transistors of the front and back ends of the memory page are conducted to connect the selected bit lines bl 1 bl 3 and the source bias to the ground and the word line driving circuit.