does not under go a threshold voltage implant process application_number US 201414161611 A description the structure and layout of the present invention lateral bipolar junction transistor lbjt with higher current gain are described in detail the improved lbjt structure is described for a lateral pnp bipolar transistor but it should be understood by those skilled in the art that by reversing the polarity of the conductive dopants lateral npn bipolar transistors can be made please refer to fig1 and fig2 fig1 is a top planar view of a layout of the substantially concentric lateral bipolar transistor according to one embodiment of the invention fig2 is a schematic cross sectional view of the transistor in fig1 taken along line i i u2032 of fig1 as shown in fig1 and fig2 the lateral pnp bipolar transistor 1 is formed in a semiconductor substrate 10 such as a p type doped silicon substrate the lateral pnp bipolar transistor 1 comprises a p doping region 101 that functions as an emitter region of the lateral pnp bipolar transistor 1 which is formed within an n well nw 14 the rectangular shape of the emitter region 101 as set forth in fig1 is merely exemplary it is.