cleaning electrode 71 and the grounded chamber walls generate a cleaning plasma when the increase of a contamination material 60 fig3 deposited on walls of the chamber 10 and surfaces of the electrodes 11 and 12 is detected by electrical or optical detection the cleaning electrode 71 is supplied with dc or ac bias voltage from the second power supply 50 the cleaning electrode 71 is moved in the vertical direction using the electrode supporters 72 and the cleaning electrode 71 generates a cleaning plasma between the cleaning electrode 71 and the chamber walls the reactive species of the cleaning gases are subjected to physical and chemical reaction with the contamination 60 to remove the contamination 60 from the walls of the chamber 10 or the electrodes 11 and 12 and they are exhausted out of chamber 10 by the exhaust 13 the cleaning electrode 71 moves upward and downward to remove the particles on the entire surface of the chamber walls the cleaning units according to these embodiments can be applied to reactive ion etch equipment plasma enhanced pe dry etching device and inductively coupled plasma icp dry etching equipment the cleaning units according to these embodiments can be also applied to sputter equipment for depositing a conductive film and chemical vapor deposition cvd equipment for depositing a thin film by chemical reactions like the above described dry etching device such a sputter equipment or cvd equipment.