or tantalum nitride patterned multi stack material layers containing or consisting of layers of at least two different materials selected from the group consisting of silicon polysilicon silicon dioxide low k and ultra low k materials high k materials semiconductors other than silicon and polysilicon and metals and patterned dielectric material layers containing or consisting of silicon dioxide or low k or ultra low k dielectric materials 1 by weight preferably 0 1 by weight more preferably 0 01 by weight and most preferably 0 002 by weight aqueous solutions of the surfactants a to be used according to the use of the invention exhibit a static surface tension lt 25 mn m and more preferably lt 20 mn m the static surface tension can be measured as described for example in the american patent application us 2009 0264525 a1 example 10 determination of the surface tension page 30 paragraph 0302 only that the above mentioned concentrations are used the surfactants a contain at least three preferably three short chain perfluorinated groups rf selected from the group consisting of trifluoromethyl pentafluoroethyl 1 heptafluoropropyl 2 heptafluoropropyl and pentafluorosulfanyl preferably pentafluoroethyl and 1 heptafluoropropyl preferably the perfluorinated groups rf are bonded to the same multi valent preferably four valent central moiety b the central moiety b can be a carbon atom an alkyl group preferably having 2 16 carbon atoms a monocyclic or polycyclic cycloalkyl group preferably having 5 12 carbon atoms and mononuclear or polynuclear aryl group preferably having 6 18 carbon atoms the cycloalkyl groups b and the aryl groups b may contain at least one heteroatom selected from the group consisting of oxygen sulfur nitrogen and phosphorus however it is preferred that such groups b contain only one or no.