by applying a voltage to the nin zone of the structure n doped layer 4 located in the vicinity of the substrate represents common electric part second n doped layer 6 deposited after structure 5 makes it possible to apply a voltage to the detection structure the detection part acts as a variable resistance but also as a current generator this resistance and the photocurrent generated depend on the incident optical intensity this photodetector can become weaker than resistance rs connected in series with the laser diode the control of the emissive part requires that laser diode part d l be prepolarized by applying a voltage and by applying a current through junction pn of the active part in the absence of detected radiation diode d d does not conduct i e does not generate a current by acting on the values of resistance connected in series and according to the structure of diodes being considered head to foot or series it is possible to achieve functions of threshold triggering or bistability in the laser emission as a function of the illumination this linking of two functions by growth of semiconducting materials makes it possible to produce a multifunction component in plate form where one of the faces is subjected to the illumination to be detected and the other emits a radiation in the specific spectral region in the active material employed in junction pn of the laser diode the type of integration described above is not specific to the use of quantum multiwell detectors the same type of integration of the.