invention is well suited for implementing a low noise amplifier using various manufacturing technologies and types of components although npn bipolar transistors are employed in the amplifier shown in fig1 and 2 any kind of amplifier components such as mos cmas soi hemt and hpt transistors microwave tubes and vacuum tubes may be employed in the circuit configurations of the invention in these components the terminology related to the electrodes may vary the main electrodes of a bipolar transistor are a collector and an emitter and the driving electrode is termed as a base in fet transistors the corresponding electrodes are the drain the source and the gate in the case of vacuum tubes the corresponding transistors are referred to as the anode the cathode and the gate hence the terms emitter collector base and common base stage must herein be understood as broader terms covering the electrodes of other types of amplifier components fig1 shows a circuit diagram of an amplifier of the invention a npn bipolar transistor q1 provides a common base input stage npn transistors q2 and q3 provide an output stage of the type white 39 s cascode a collector of q1 is connected via a coil a first side of to an operating voltage vcc 2 0 v which is obtained from a voltage source 10 an emitter of transistor q1 is connected via an emitter resistor r1 to a second side of the operating voltage at a potential of 0 v ground a voltage divider which is composed of a series.