hot 29 ppm u00b0 c ______________________________________ employing the procedure of example 1 a resistor paste according to the invention was prepared with the following components parts by wt ______________________________________palladium 32 4silver 21 6glass frit glass e 16 0tungsten 3 50mno sub 2 1 34tio sub 2 1 16cao 1 00vehicle 22 00______________________________________ resistor devices 200 square pattern made with this paste exhibited the following device characteristics ______________________________________2500 v 20 surges 2 10 u03bcsec 0 08 1000 v 200 surges 10 1000 u03bcsec 1 69 1000 v 100 surges 10 700 u03bcsec 0 975 tcr hot 8 ppm u00b0 c tcr cold 41 ppm u00b0 c ______________________________________ employing the procedure of example 1 a resistor paste according to the invention was prepared with the following components designated in parts by weight ______________________________________palladium 32 4silver 21 6glass frit glass c 17 0tio sub 2 1 16mno sub 2 1 34tungsten 5 50vehicle 22 00______________________________________ resistor devices 200 square pattern made with this paste exhibited the following device characteristics ______________________________________2500 v 20 surges 2 10 u03bcsec 0 07 1000 v 200 surges 10 1000 u03bcsec 0 68 1000 v 100 surges 10 700 u03bcsec 1 01 tcr hot 48 ppm u00b0 c tcr cold 97 ppm u00b0 c ______________________________________ two pastes were prepared in this example employing nearly identical formulations for comparison purposes one paste included no tungsten and the other included tungsten powder as a dopant in an amount of 3 parts by weight ______________________________________ paste parts by weight a.