u2248 100 u00b0 c the solution ignites during combustion of the solution which lasts 5 10 minutes plzt powder is formed the powder is then heated at 500 u00b0 c for 2 h in air to remove any residual carbon fig4 comprises two graphs showing the dielectric properties as a function of bias field measured in plzt films deposited by aerosol deposition on a platinized silicon substrate and b aluminum foil specifically the graphs show dielectric properties as a function of bias voltage measured on a plzt approximately 1 5 u03bcm thick film deposited by aerosol deposition on platinized silicon substrate and aluminum foil the solid upper line indicates dielectric constant as read along the left vertical scale in each graph the dashed lower line indicates the voltage loss as read along the right vertical scale in each graph it is noteworthy that no interceding oxide layer is necessary between the dielectric and the electrode surface both graphs depict date for a capacitor comprising direct contact of dielectric with metal electrodes top electrodes of 250 u03bcm in diameter were coated for dielectric property characterization dielectric constants of about 120 and about 80 were measured on plzt deposited on platinized silicon and aluminum foil respectively as discussed supra the invention provides constructs exhibiting dielectric constants k of at least as high as about 80 and typically in a range of from about 80 to about 130 constants of about 100 are typically achieved platinized silicon wafers are commercially available suitable wafers were purchased from nova electronic materials llc flower mound tex suitable aluminum foil is also available commercially.