side is peeled then the semiconductor chips 21 1 21 2 21 3 picked up by use of a picker are mounted on lead frames or tab tapes and sealed into resin or ceramic packages respectively to complete semiconductor devices according to the apparatus with the above configuration and the manufacturing method since the si re crystallization layers 30 1 30 2 30 3 are formed in a region discarding portion which is to be removed in the back side grinding process damage layers are not left behind after the back side grinding process and occurrence of distortion of si and minute cracks of the separation surface and edge portion can be prevented further since the side surface of the semiconductor chip sealed into the package is a cleavage plane uneven portions and scratches are not formed on the element forming surface and side surface of the semiconductor chip and the quality and shape thereof are good therefore a deterioration in the characteristic of the semiconductor chip occurrence of faults and a lowering in the resistance to bending or breaking can be suppressed fig2 and 22 sequentially show parts of a manufacturing process and parts of a manufacturing apparatus for illustrating a semiconductor device manufacturing method and apparatus according to a fourth embodiment of the present invention in the fourth embodiment silicon re crystallization regions 30 a 1 30 a 2 30 a 3 are formed in a semiconductor wafer 21 by focusing a laser beam on the internal portion of the semiconductor wafer 21 and adjusting laser beam power when the laser beam is applied thus in a case where the silicon re crystallization regions are formed in the semiconductor wafer damage layers can be removed by setting up the.