can be obtained if the enhancement implant is performed before deposition and reflow of a phosphosilicate glass on the chip such glasses are frequently used as a base layer onto which a metallization layer is deposited in such instance there will be more than enough heating of the integrated circuit to cause the aforementioned desired enhancement implant ion diffusion for example the phosphosilicate glass will be annealed at a temperature of about 1050 u00b0 c for about 8 10 minutes in addition one might choose to have an n deposition in the contact windows which might be for example 30 minutes at 900 u00b0 c this deposition might be annealed for 30 minutes at 900 u00b0 c with a slow cool to 750 u00b0 c still further passivation coatings of plasma deposited silicon nitride are ordinarily formed at temperatures of 350 u00b0 c to 400 u00b0 c for 45 minutes still further the metal underlying the plasma nitride is generally annealed frequently in a final integrated circuit fabrication step at about 450 u00b0 c for 60 minutes in such instance no additional heating is required to produce an enhancement ion diffusion almost as deep as the depletion ion diffusion however if more diffusion is needed it could readily be performed by extending the temperature and or time of the metal anneal in summary one initially produces an integrated circuit that has for example a ram with at least two potential power supply paths to the ram each potential path would have a depletion type insulated gate transistor serially connected in that.