thick pt successively can be sputtered on the layer of silicon oxide 202 next one or more lead zirconate titanate pzt films 203 can be deposited according to a sol gel operations to achieve a crackless pzt film 203 layer one or more ti pt top electrodes 204 can then be sputtered upon the pzt film layer 203 thereafter as indicated at step 2 the silicon substrate 201 with the prepared pzt film layer 203 can be patterned utilizing a standard photolithography technique as indicated at step 3 a black oxide window with align marks can be created through the use of hf solution etching and front electrodes and the pzt film layer 203 can then be patterned in an orderly manner by employing reactive ion etching rie and wet etching respectively through a double side alignment process next koh chemical etching can be utilized for bulk silicon substrate 201 micromachining as indicated at step 4 in order to prevent the koh solution from eroding the pzt film layer 203 a delicate jig can be employed to protect the pzt film layer 203 and the wet etching process can be halted thereafter as depicted at step 5 a silicon rie processing operation can then be utilized to release the formed composite cantilever 206 next as indicated at step 6 a well chosen nickel mass 207 can be fabricated utilizing for example an uv liga su 8 technique and affixed to the composite cantilever 206 utilizing a glue following completion of the wire bonding process the pzt film layer 203 can be poled by applying for example a 160 v cm dc voltage for five minutes the resulting cantilevers 206 composed of for example.