electrode in addition temperature control means such as cooling means may be provided inside the drum 62 the film forming means 64 is for forming the inorganic layer 14 on the surface of substrate b y1 in which the first organic layer 12 is formed using a vacuum deposition method in the manufacturing method according to the embodiment of the present invention there is no particular limitation on the method of forming the inorganic layer 14 and all kinds of known vacuum deposition methods vapor deposition methods such as cvd plasma cvd sputtering vacuum deposition and ion plating may be used therefore in the film forming chamber 52 of the inorganic film forming apparatus 22 the film forming means 64 is formed by various kinds of members according to a vacuum deposition method to be executed for example in order to form the inorganic layer 14 in the film forming chamber 52 using an icp cvd inductive coupled plasma cvd method the film forming means 64 is configured to include an induction coil for forming an induced magnetic field gas supply means for supplying reactive gas to a film forming region and the like in order to form the inorganic layer 14 in the film forming chamber 52 using a.