channel causes the channel voltage next to the source to be close to that of the source and thus to have a gate channel voltage which causes a high channel resistance in that area thus while leakage will increase with an increasing reverse bias voltage on the icd the resistance of the channel will be high and resistance of the channel will increase with increasing reverse bias voltage thereby increasing the resistance of the channel with increasing reverse bias voltage thereby limiting the rise in the leakage current with increasing reverse bias voltage this is the standard id vds behavior of a mosfet with a constant gate potential in usual diode terms the anode of a diode is the positive terminal during forward conduction and the cathode is the negative terminal for the n channel icd the forward conduction drain corresponds to the anode and the source which is the n type substrate to the cathode if one were to build a p channel icd the anode would correspond to the source which is the p type substrate and the cathode to the drain due to carrier mobility differences our discussion of the icds will focus on the n channel device with the understanding that changing material types and circuit polarities would produce a p channel icd for those skilled in the art it is apparent that a jfet could be substituted for the mosfet to form the icd and the icm could also be made in a jfet flavor in the disclosure to follow passive n channel icds and active.