method this gap may be not insignificant for example 1 micron for low cost uv lithography technologies this configuration of the detector 90 has the additional advantage of being more straightforward to implement given the absence of the aperture 70 the advantage of the configuration of the detector 60 allowing the application of a different potential at the contact 76 relative to the contact 75 made possible by the aperture 70 is that the potential applied by the contact 76 is more homogeneous spatially than the potential applied by the grating via the contact 77 unlike the configuration of the detector 90 the photo charge carriers are collected via the collector diode 62 in the detector 90 similarly to the manner described in relation to the detector 60 except for the sole fact that it is not possible to apply an independent gate voltage via the mirror 68 the distribution of the photogenerated charges being determined solely by the potential applied to the grating 18 similarly to the detector 60 the following configurations can be applied to the detector 90 1 a configuration wherein the grating 18 and the metallization 66 and therefore the mirror 68 are short circuited the potential of these three elements v 1 v 2 v 3 serves to define the bias voltage v 1 v m of the collector diode 62 in accordance with the.