magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer the mtj memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art application_number US 51553306 A description the preferred embodiment of the present invention teaches a method of forming an mtj device also called an mtj memory cell as one of an mram cell array of such devices the ferromagnetic free layer of each such device having a magnetic anisotropy created by magnetic coupling through their interface with an antiferromagnetic layer referring to fig1 a there is shown a schematic vertical cross sectional view of an mtj cell 10 formed in accord with the method of the present invention the cell is disposed between a substantially planar substrate which contains a word line 30 that is insulated 90 from the cell and a bit line 20 which contacts an upper portion of the cell and which runs orthogonally to the word line a lower conducting electrode 35 contacts a lower portion of the cell and is required for reading operations the cell is thereby positioned at an orthogonal junction between the word and bit lines and is disposed between them an overhead view of the mtj.