a structure of s cpw type it should however be understood that it generally applies to other types of strip transmission lines having their parameters depending on the distance s between this strips and various ground planes as concerns the lateral displacement various variations may also be used in particular attraction electrodes 21 and 22 and ground strips 8 9 may be coupled by interdigited structures further spring forming blades 25 1 25 2 26 1 26 2 may have various configurations for example meander shapes one of the advantages of the structure described herein is that it is effectively compatible with usual metallization level forming techniques generally used to form interconnects above a microelectronic integrated circuit as an illustrative example only the following dimensions may be selected for a transmission line intended to operate at frequencies close to 60 ghz strip width and distance between strips 6 8 9 approximately in the range from 7 to 15 u03bcm vertical distance between metallization levels approximately in the in the range from 0 5 to 1 u03bcm distance between ground strips 8 and 9 and electrodes 21 and 22 approximately ranging from 0 5 to 2 u03bcm with such values the electrostatic displacement of the various elements can be controlled with voltages having values on the order of some ten volts which may cause variations of the capacitance and inductance values by a factor on the order of from 1 5 to 3 various techniques may be implemented to form a transmission line such as described herein for example as concerns fig5 b recesses 18 19 under each of lateral strips 8 and 9 may be formed by forming on the surface of.