may be co 2 or a mixture of co 2 and other fluids fig2 is a phase diagram for co 2 according to the prior art the diagram in fig2 shows that the critical temperature of co 2 is 305 u00b0 k 32 u00b0 c and the critical pressure is 72 9 atmospheres 1073 psi in alternate embodiments the fluid may be any suitable gases which may be converted to supercritical fluids which will not degrade the structural or chemical properties of the wafers or film deposition on the wafers cleaned in the apparatus the fluid may also be a mixture of two or more dense phase fluids selected to provide the optimal solvent properties for anticipated containments of the wafers being cleaned to withstand the parameters of the environment to which it will be subjected as noted above the vessel or chamber 12 may be made of corrosion resistant metal such as for example stainless steel the chamber 12 is sized to hold 200 mm or 300 mm wafers referring now also to fig1 a 1b the apparatus 10 in the embodiment is shown with one wafer s in the chamber 12 in alternate embodiments the chamber of the cleaning apparatus may be sized to hold any desired number of wafers such as for batch processing as seen in fig1 the chamber 12 may include one or more inlet ports 20 only one port 20 is shown for example purposes for introducing the cleaning fluid into plenum 18 the chamber 12 may include one or more outlet ports 22 one port.