first preferred embodiment of the present invention provides a method for forming a patterned microelectronics conductor layer within a low dielectric constant dielectric layer upon a substrate employed within a microelectronics fabrication suitable for further processing steps if desired employed in accord with methods and materials known in the art of microelectronics fabrication the patterned microelectronics conductor layer has formed around it a maximized amount of low dielectric constant dielectric material referring now to fig7 to fig1 there is shown a series of schematic cross sectional diagrams illustrating the results of forming patterned microelectronics conductor and low dielectric constant dielectric layers upon a semiconductor substrate employed within an integrated circuit microelectronics fabrication in accord with a more specific embodiment of the present invention which constitutes a second preferred embodiment of the present invention fig7 is a schematic cross sectional diagram of an integrated circuit microelectronics fabrication at an early stage in its fabrication in accord with a second preferred embodiment of the present invention shown in fig7 is a semiconductor substrate 30 having formed over it a dielectric layer 32 within which are formed conductor regions 31 a and 31 b to form a patterned microelectronics conductor layer formed over the substrate is a low dielectric constant dielectric layer 33 with respect to the semiconductor substrate 30.