the lengths l n and l p are each given as multiples of the lengths of sq n and sq p that is to say effectively of w thus one obtains l n s n u00d7 w and l p s p u00d7 w where the numbers s n and s p give the ratio of the length width of each resistance element respectively the numbers s n and s p are real positive numbers and need not be integers next one considers the temperature dependent resistance of one square of the n doped and the p doped polysilicon in respectively the corresponding curves are shown in fig2 a and 2b one can clearly see the negative gradient of the n doped polyresistance in contrast to the slightly positive gradient of the p doped polyresistance these curves can be represented as a series truncated to the second term as shown below in equation 1 the first derivative with respect to the temperature is then obtained from this in equation 2 r t r t 0 u00b7 1 t c1 u00b7 t u2212 t 0 t c2 u00b7 t u2212 t 0 2 in u03c9 1 u03b4r t u03b4 t r t 0 u00b7 t c1 2 u00b7 t c2 u00b7 t u2212 t 0 in u03c9.