fig1 shows the longitudinal sectional structure of a mold 1 to be used in a semiconductor device fabrication method using a nanoimprinting method according to an embodiment of the present invention fig2 is a lower surface view of fig1 note that fig1 is a longitudinal sectional view taken along a line a a in fig2 the mold 1 has a projecting region 11 in the right end portion and a projecting region 12 on the left side in the longitudinal sectional view of fig1 between the projecting regions 11 and 12 low recessed regions 14 and 15 having a predetermined width a are formed and a pattern region 13 having a pattern are formed between the regions 14 and 15 in addition a low recessed region 16 similar to the regions 14 and 15 is formed in the left end portion the regions 11 to 16 are arranged with a positional relationship as shown in fig2 that is the pattern region 13 is positioned in an almost central portion of the mold 1 and the low regions 14 and 15 are formed around the pattern region 13 the projecting regions 11 and 12 are formed to surround the regions 14 and 15 and the.