chamber 110 a valve 162 is positioned on exhaust line 160 between reaction chamber 110 and a vacuum pump 164 vacuum pump 164 and valve 162 may be operated in combination to define a desired pressure within inner space 114 a substrate w is loaded on a stage heater 170 disposed proximate a floor surface 114 c of inner space 114 stage heater 170 is adapted to heat substrate w to a predetermined temperature to accomplish this in one embodiment stage heater 170 may be electrically connected to a temperature controller 171 stage heater 170 may also be grounded or otherwise electrically biased to form a bottom electrode during processes requiring the generation of plasma in addition to directly heating wafer w the temperature of inner space 114 may be controlled by operation of stage heater 170 a shower head 130 is disposed through chamber lid 111 to extend into inner space 114 in a position opposing stage heater 170 shower head 130 may be used in various processes to introduce one or more reaction gas es into reaction chamber 110 in the illustrated example shower head 130 is electrically connected to a high frequency hf power supply 136 in order to serve as a top electrode during processes requiring generation of a plasma one or more heater s.