the level to which some negative photoresists can become hardened can be in direct relation to the dose of light radiation the photoresist is exposed to this principle can generally be exploited to build micro structural elements of varying complexity as described herein an interface gel dose d i g can be the critical dose of light radiation to start a molecular cross linking process of a negative photoresist d 0 g can be the dose required to fully cross link the photoresist in general for a dose d x g larger than d i g and less than d 0 g a portion of the photoresist monomers may become cross linked and therefore hardened referring to fig2 a b and without wishing to be bound by theory it can be possible to selectably cross link i e harden a thickness t within the total thickness t 0 of a deposited layer of photoresist by controlling the light exposure dose of the unexposed photoresist fig2 b generally shows the relationship between exposure dose and photoresist thickness after development in general the dose can be expressed by d p u00d7 u03b4t where d is the dose in mj cm 2 p is the power density of a lamp in mw cm 2 and u2212 t is the exposure time in seconds in general the structure illustrated in fig1 can be created using one photoresist material and exposing certain areas of the photoresist to a dose d of light for an appropriate time.