configurations application_number US 31759805 A description it is desirable for a cpp spin valve structure to have a thin seed layer and a thin afm layer so as to reduce shield to shield spacing this makes possible a thicker ap1 ap2 which gives a better cpp gmr ratio this requires better hex exchange coupling between ap2 and afm layers previously ta50 ru20 ptmn was used the resulting thickness of the seed layer and afm is undesirably large for high density applications also the reliability of ta ru ptmn type spin valves which are used in cip gmr heads is a concern the present invention overcomes these difficulties by using a ta ru irmn70 structure as compared to ta nicr irmn70 we now disclose the present invention through a description of the process for its manufacture referring now to fig2 the process begins with the provision of lower shield layer 10 whose upper surface is then cleaned through plasma etching using argon flowing at a rate of about 30 sccm at a power level of about 50 w for about 10 minutes followed by the deposition of tantalum layer 21 between about 5 and 20 angstroms thick on this cleaned surface next layer 31 about 20 angstroms thick is deposited onto tantalum layer 21 our preferred.