when used as an etching solution the alkaline component is used with a wide range of concentration from 1 wt to 50 wt depending on aims when used as a washing liquid with consideration given to sufficient washing effect and prevention of damage to substrates the alkaline component is used with a concentration preferably between 0 01 wt and 1 0 wt more preferably between 0 05 wt and 0 8 wt and furthermore preferably between 0 1 wt and 0 5 wt since a chelating agent has a specificity to metals it is effective to co use multiple chelating agents for washing and to prevent adsorption of various metals accordingly the present invention may comprise other chelating agents other chelating agents used in the present invention are not particularly limited as long as they are a chelating agent used for etching or washing during processes of manufacturing semiconductors and other electronic devices and they include aminocarboxylic acids such as ethylenediamine tetraacetic acid and nitrilotriacetic acid organic acids such as citric acid and tartaric acid nitrogen containing heterocyclic compounds such as phenanthroline ethylenediamine tetraacetic acid is preferred because it forms a complex with a variety of metals the concentration of the other.