here a pixel electrode px is formed in a spreading manner on the fourth insulation film ins 4 in a state that the pixel electrode px covers a most portion of the pixel region including a portion above the thin film transistor tft a contact hole ch which reaches the source electrode sd 1 is formed in the fourth insulation film ins 4 further a fifth insulation film ins 5 is formed in a state that the fifth insulation film ins 5 covers the pixel electrode px the fifth insulation film ins 5 is filled in the inside of the contact hole ch and a surface of the fifth insulation film ins 5 including an upper portion of the contact hole ch is leveled on the leveled fifth insulation film ins 5 a counter electrode ct is formed in a comb teeth shape here symbol pe indicates cutout portions of the counter electrode ct and the pixel electrode which is exposed from the cutout portions are viewed further an orientation film ori 1 is formed to cover a topmost surface of the counter electrode ct on a main surface of a cf substrate sub 2 color filters cf which are defined from each other by a black matrix bm are formed in the same manner as the embodiment 1 and an orientation film ori 2 is formed on a topmost surface of the cf substrate sub 2 each color filter cf is basically constituted of unit pixels sub.