shown in fig7 a as shown in fig8 b the filling degree in the exit pupil is greater than 78 fig9 shows a euv projection exposure apparatus in a detailed view the illumination system is the same as shown in detail in figure corresponding elements have the same reference numbers as those in fig3 increased by 700 therefore the description to these elements is found in the description to fig3 in the image plane 729 of the illumination system the reticle 767 is arranged the reticle 767 is positioned by a support system 769 the projection objective 771 having six mirrors images the reticle 767 onto the wafer 773 which is also positioned by a support system 775 the mirrors of the projection objective 771 are centered on a common straight optical axis 747 the arc shaped object field is arranged off axis the direction of the beam path between the reticle 767 and the first mirror 777 of the projection objective 771 is convergent to the optical axis 747 of the projection objective 771 the angles of the chief rays 745 with respect to the normal of the reticle 767 are between 5 u00b0 and 7 u00b0 as shown in fig9 the illumination system 779 is well separated from the projection objective 771 the illumination and the projection beam path interfere only nearby.