the other layers in still other embodiments the first electrode 2 and or second electrode 8 may be composed of a conductive metal or light transmissive and conductive material examples including without limitation transparent ito and al doped zno furthermore layers and regions may include two or more layers arranged to form a laminated structure with or without inclusions or regions of yet other non doped and doped semiconductor materials layers and devices may include planar and non planar shapes likewise the sectional views may represent structures of planar and or diametric extent the sio 2 layer may be composed of other comparable materials referring now to fig1 a an avalanche amplifying structure 1 operating in the geiger mode with a lateral direction of avalanche is shown and described including a first electrode 2 a governor 6 an integrator 5 and an avalanche region 3 a substrate 7 and a second electrode 8 in a layered arranged in the order described it is preferred for the avalanche region 3 substrate 7 and second electrode 8 to be of comparable lateral extent likewise it is preferred for the first electrode 2 and governor 6 to be slightly smaller in extent as compared to the integrator 5 the avalanche region 3 includes a hole through its thickness within which resides the integrator 5 the hole and integrator 5 should be sufficiently larger than the governor 6.