utilization of a fet structure that has a relatively small sub threshold slope and relatively large c ox and u03bc values the silicon fin width and height may be adjusted so as to obtain a ss of about 62 mv decade response time of the sensor may also be reduced by increasing the surface area of a silicon fin a reduction in response time without degradation of sensitivity may be obtained by a channel length l g of a silicon fin that is greater than about 0 5 micron u03bcm a silicon fin width w si that is less than about 30 nanometers nm and a silicon fin height h si that is greater than or equal to twice w si a w si of less than about 25 nm may result in a volume inversion effect which may cause mobility u03bc to increase the gate dielectric may comprise a layer of sio2 or sion or a stack consisting of sion and metal oxide insulator such as hfo2 with an equivalent oxide thickness of about 5 nm an electrolyte may act as the top fet gate the gate dielectric may be covered with antibodies that selectively bind with the biomolecules to be detected in some embodiments fig1 illustrates a cross section of.