be seen application of embodiments results in no to very thin deposition of sige for p type doped substrates such as lightly p type doped substrates fig4 and 5 and much thicker deposition of sige for n type doped substrates such as lightly n type doped substrates fig6 and 7 while the examples above have identified silicon as a substrate material boron and arsenic as dopants sige as a deposited material trench isolation as a technique for electrical isolation of devices on substrate and epitaxial deposition as a method for depositing the deposited material other materials and techniques now known or later discovered may be employed where suitable and or desirable within the scope of the invention disclosed and claimed herein the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention as used herein the singular forms u201c a u201d u201c an u201d and u201c the u201d are intended to include the plural forms as well unless the context clearly indicates otherwise it will be further understood that the terms u201c comprises u201d and or u201c comprising u201d when used in this specification specify the presence of stated features integers steps operations elements and or components but do not preclude the presence or addition of one or more other features integers steps operations element components and or groups thereof the corresponding structures materials acts and equivalents of all means or step plus function elements in the claims below are intended to include any structure material or act for performing the function in combination with other claimed elements as specifically claimed the description of the present invention has been presented for purposes of illustration and description but is not intended to be exhaustive.