the relative sizes may vary depending upon application without departing from the scope of the present invention the various structures of mems flux concentrator device 50 illustrated are not shown to scale and the dimensions of the various structures may be exaggerated to better illustrate the relationship between the shown structures fig1 g and 1h are further illustrations of the embodiment of fig1 a through 1f fig1 g illustrates the results of exposing selected portions of the wafer 10 to an etching process such as the deep reactive ion etching drie process referred to in u s pat no 7 655 996 incorporated herein by reference fig1 h illustrates a cross sectional view schematic diagram of the released mems cantilever 40 and sensor tip 41 where cantilever structure 40 is released by etching the wafer 10 the mems structure is preferably defined using standard lithographic techniques the process may involve using a deep reactive ion ecthing drie process to remove unwanted portions of the device layers the absence of which is illustrated in fig1 g as shown in fig1 g the portions forming the flux concentrators 42 44 comprise above contact layer 30 an insulating layer 76 and a soft magnetic material layer 74 the magnetic layer 74 of the flux concentrators 42 44 are positioned such that when the cantilever 40 is in an intermediate position i e midway between the two farthest positions of oscillatory travel the magnetic sensor 35 and magnetic layer 74 as substantially in alignment i e as depicted in fig1 g substantially in the same plane that is perpendicular to the surface of the paper as shown in fig1 h cantilever 40 may include the followings layers wafer 10 insulating layer 15 a first electrode 20 layer pzt layer 25.