is about 160 u03c9 to 230 u03c9 since the off resistance of the fet switch is very high the dissipation is very small in this state i e reflection coefficients with magnitude near one are obtained thus some form of ballasting or loading may be required to balance the amplitude characteristics between the two switching states the power handling capability of the switch in the off state is determined by the amplitude of the rf voltage swing which can be sustained across the switch without turning the fet on in one direction or the other for a single gate switch the fet will turn on if the bias between the gate and either switch terminal ohmic contact becomes less than the pinch off voltage thus the maximum permissible voltage swing across the switch cannot exceed the excess gate bias beyond pinch off for example if the pinch off voltage is 7v and the gate is biased at 10v the rf swing at the output of a single gate switch may not exceed 3v peak or 6v peak to peak or else the fet will turn on during negative excursions of the rf voltage in this example the power handling capability of the off single gate switch would be about 23 mw into a.