should have the same length as the etched first metal layer inductors formed according to the present invention e g as in fig9 have much lower resistance compared to conventionally fabricated inductors because the metal plug shunts the first metal to the second metal in addition electric field lines are substantially retained within the inductors prepared according to the present invention rather than being lost to the substrate because of the increased height of the wire formed by the first and second metals and the metal plug the equivalent resistance of the inductor due to the emission of rf electromagnetic field is dramatically reduced and a high q performance is obtained methods according to the present invention may be utilized to construct spiral inductor wires 62 using a layout such as shown in fig1 fig1 shows a parallel plate capacitor 64 formed according to the present invention note that in contrast to conventional horizontal parallel plate capacitors as in fig1 the capacitor plates 66 68 are formed from the two metal layers 20 52 and the metal plugs 48 in adjacent vias 46 47 the plates are oriented vertically since they are formed from via plugs 48 filled in the second dielectric 36 fig1 illustrates a practical layout 70 for fabricating capacitors according to the present invention that permits efficient use of surface area across a wafer although plates 66 68 form a rectangular shape as shown in fig1 the layout geometry of the plates may take another form such as circular or elliptical moreover although the cross sections of inductors and capacitors according to the present invention are shown in the figures as rectangular or square for convenience the metal layers and the plugs need not be rectangular or square in cross section other geometries may be suitable.