sensors are respectively arranged adjacent to the mass block the mass block and the displacement sensors respectively comprise a plurality of metal layers and a dielectric layer between two metal layers in the mass block regions corresponding to the y z and x direction displacement sensors respectively comprise at least two metal layers connected by a via the y z and x groups displacement sensors respectively comprise at least two metal layers connected by a via application_number US 201514724417 A description the present invention will be described below according to its preferred examples it should make appreciated that preferred examples of the present invention are only given to illustrate preferred embodiments of the present invention the scope of the present invention is not limited to the examples disclosed in the description fig1 shows the plan view of a three axis micro accelerometer structure fabricated according to the present invention as shown in this figure the three axis micro accelerometer structure 100 comprises a mass block 10 and two groups of finger electrode structures 21 22 at two sides of the mass block 10 the mass block 10 and two groups of finger electrode structures 21 22 shown in the figure are structures manufactured by a standard cmos process the mass block 10 and the two groups of finger electrode structures 21 22 are electrically insulated at intervals by a space 21 a 22 a respectively if the structural body is manufactured by a standard cmos process the two groups of finger electrode structures 21 22 may include 6 metal layers and a dielectric layer.