blow drying may typically be used alternatively the imaged photo resist layer may be removed prior to drying the wafer or even prior to washing the wafer at 332 the substrate is moved to further substrate processing such as photoresist removal or dielectric deposition or various memory or mem fabrication steps fig4 a illustrates a semiconductor device 400 prior to decap and poly etch in accordance with the present invention a substrate 402 illustratively a semiconductor wafer has a diffused region 404 covered by a dielectric layer such as silicon oxide layer 406 the dielectric layer 406 has a hole or contact recess 408 formed through the dielectric 406 to contact the diffused region 404 a deposited layer of conductive tin 410 covers the flat portion of the contact recess 408 a layer of polysilicon 420 which may be either doped or undoped overlays the dielectric 406 and fills the contact recess 408 the polysilicon layer 420 may have what may be known as a native oxide layer 424 that may form in varying thicknesses due to exposure of the polysilicon layer 420 to the oxygen or moisture in the air during the time period after the polysilicon deposition during the patterning process and before the poly etch process removing this native oxide also known as an oxide cap may be known as a decapping.