alternatively be formed of stainless steel plastic or other suitable materials pellicle film 22 protects photomask 12 from contaminants such as dust particles by ensuring that the contaminants remain a defined distance away from photomask 12 this may be especially important in a lithography system during lithography photomask assembly 10 is exposed to electromagnetic energy produced by an illumination source within the photolithography system the electromagnetic energy may include light of various wavelengths such as wavelengths approximately between the i line and g line of a mercury arc lamp duv vuv or euv radiant energy or x rays pellicle film 22 is designed to allow a large percentage of the electromagnetic energy to pass through it because dust particles collected on pellicle film 22 will likely be out of focus at the surface of the wafer being processed the exposed image on the wafer should be clear pellicle film 22 formed in accordance with the teachings of the present invention may be satisfactorily used with all types of electromagnetic energy and is not limited to any particular lightwaves described fig2 illustrates a cross sectional view of photomask 60 photomask 60 includes transparent substrate 16 two anti reflective layers 24 and 26 and patterned absorber layer 18 anti reflective layer 24 is formed on patterned absorber layer 18 and a second anti reflective layer 26 is formed on back side 19 of substrate 16 absorber layer 18 is formed on front.