121 123 and 125 bridge circuits 121 123 and 125 can each be preferably implemented as anisotropic magnetoresistive amr wheatstone bridge circuits depending upon design considerations system 100 further includes a biasing magnet 102 the direction of the bias magnet movement associated with biasing magnet 102 is generally indicated by arrows 104 and 106 magnetic field lines 110 and 108 associated with magnet 102 are also depicted in fig1 chip carrier 160 includes a plurality of electrical connections or pins 110 112 114 116 118 120 122 124 similarly chip carrier 162 includes a plurality of electrical connections or pins 126 128 130 132 134 136 138 140 likewise chip carrier 164 includes a plurality of electrical connections or pins 142 144 146 148 150 152 154 156 in general the chip carriers 160 162 164 and respective amr bridge circuits 121 123 125 can be grouped together to form a magnetoresistive array or system 100 note that although only three amr bridge circuits 121 123 125 are depicted in fig1 magnetoresistive array 100 can be configured with more or few amr bridge circuits and associated chip carrier devices depending upon design considerations for example it is possible to implement magnetoresistive array 100 with eight amr bridge circuits the movement of the biasing magnet 102 generates a sinusoidal signal response from each magnetoresistive bridge circuit 121 123 125 the amr bridge outputs generated by magnetoresistive bridge circuits 121 123 125 are nearly identical.