top of uppermost alternating layer of dielectric material in this example dielectric material 217 decoupling capacitor stack 240 is conformally formed on the vertical surfaces of via 342 as a result of the corrugated configuration of via 342 the total capacitive area of the decoupling capacitor stack is increased as compared to capacitors formed in a linearly edged via passivation layer 220 shown in fig1 covers the exposed surface of decoupling capacitor stack 240 and alternating layers of dielectric materials 217 and 215 a conductive material such as tungsten or copper fills each of via 338 and via 342 to couple metal line 241 and metal line 243 respectively to metal line 230 via 342 makes a decoupled connection between metal line 230 and metal line 243 in one embodiment metal line 241 represents a v cc and metal line 243 represents a v ss metal line fig2 9 show one technique for forming the structure illustrated in fig1 fig1 is a flow chart representing a flow scheme described with reference to fig2 9 fig2 shows metal line 230 resting on and in interlayer dielectric 210 on substrate 205 a top surface of metal line 230 and interlayer dielectric 210 may.