the logic circuit or rf microwave transistor operation fig8 illustrates an embodiment 200 starting from the sti etch back process the etching can be achieved by a dry etch process with chemistry etching away either the silicon oxide or silicon nitride or the combination thereof i e a hybrid sti scheme the target etch depth can be 30 nm such that the same number of fins 204 is exposed above the remaining sti 208 fig9 illustrates the high k material deposition 210 the material serves as the gate dielectric to provide a higher k value for better device drive current benefit but without increasing the physical thickness that may cause additional leakage current the typical high k material used can include hfo2 al2o3 and la2o3 the process proceeds preferably with a post deposition anneal at 700 u00b0 c in the furnace to densify the film after deposition usually because of the oxygen effect there is a 1 nm interfacial siox layer formed between the high k material and the silicon substrate deposition is achieved by the atomic layer deposition ald to achieve thickness control and good conformality from the top of the fin to the bottom fig1 illustrates the deposition of workfunction metal 212 a typical workfunction metal includes tin tan tialn and tic the deposition is achieved by an atomic layer deposition ald to achieve thickness control and good conformality from the top of the fin to its bottom the purpose of the workfunction metal is to provide a right threshold voltage of the transistor to ensure that the device can produce enough drive current for switching the circuit fig1 is an illustration of the gate.