4 fig1 shows the process stage of a wafer with the beginning steps to form a plurality of conductive lines for a semiconductor device first a substantially planar layer 10 is patterned using patterning material 11 such as photoresist and etched to form a plurality of trenches 12 in the planar layer though it is not necessary that layer 10 be substantially planar it is highly desirable which will become evident as discussed later in the process also layer 10 may be made up of an insulating material such as an oxide a silicon material or any suitable material a particular process may use to construct the structure of the present invention if a material other than an insulator is used to form layer 10 then some type of conformal insulator should be formed over layer 10 after patting material 11 is removed and prior to forming a conductive layer over layer 10 referring now to fig2 patterning material 11 shown in fig1 is removed and a conductive layer 20 is formed over the surface of layer 10 which at least partially fills trenches 12 for example conductive layer 20 may be a sputtered aluminum referring now to fig3 patterning material 30 is formed so that a subsequent etch creates a plurality of conductive lines with a single conductive line 31 formed in each trench 12 and conductive lines 32 formed on the surface of layer 10 where a major portion of each conductive line 32 protrudes above the surface of layer 10 as fig4 shows patterning material 30 seen in.