reduction of pentakis dimethylamino chloro disilane using lithium aluminum hydride or sodium boron hydride pentakis dimethylamino monoethylamine disilane si 2 nme 2 5 nhet is another molecule of interest it can be formed by ammonolysis of pentakis dimethylamino chloro disilane using monoethylamine similar pentakis dimethylamino amine disilane si 2 nme 2 5 nhr where r represents hydrogen or a c 1 c 4 chain either linear branched or cyclic can be manufactured pentakis dimethylamino chloro disilane and its derivatives according to this invention contain five dimethylamino ligands and are highly reactive and support excellent silicon nitride and silicon carbonitride film deposition rates by cvd at low temperatures between usually 350 500 u00b0 c the disilane compounds described above can be used in the semiconductor industry as precursors for the manufacture by cvd of silicon nitride and silicon carbonitride dielectric films e g for sidewall spacers or etch stop film they can also be used to carry out silicon oxynitride and silicon carbo oxynitride films by introducing an oxygen containing gas in the reaction chamber it is also preferred to preheat the substrate onto which the film will be deposited at a temperature within the range of the temperature deposition of the film on the substrate e g at least 300 u00b0 c in order to form silicon nitride using the disilane compounds according to the invention i at least one of said disilane compounds i and at least one nitrogen containing gas are admitted into the reaction chamber loaded with at least a substrate typically a semiconductor substrate such as a silicon substrate and silicon nitride is deposited on the surface of the semiconductor substrate by reacting the disilane compound and.