a pin 14 is provided in the lower portion of the package the multilayer package for lsi had extremely excellent airtightness and heat dissipation capacity a sintered alloy of composition of 15 cu 85 w is coated with a w layer with a thickness of 10 u03bcm as a barrier layer by the plasma cvd method employing a mixed gas of wf 6 and h 2 subsequently by the cvd method an al 2 o 3 film with a thickness of 6 u03bcm is formed as an insulating ceramic layer fig4 is a sectional view showing a package for a microwave device manufactured using a heat transfer insulated part obtained in this way referring to fig4 the obtained heat transfer insulated part is used in the package as a heat transfer substrate 21 an alumina based microwave circuit 22 and a semiconductor chip 23 are provided on heat transfer substrate 21 the semiconductor chip 23 is a silicon or gaas chip 24 denotes a bonding wire 25 denotes a case and 26 denotes a pin the package for a microwave device has excellent airtightness and heat dissipation capacity a sintered alloy of composition of 15 cu 85 mo is coated with mo to a thickness of 5 u03bcm by the ion plating method to form a barrier layer subsequently by the plasma cvd method an al 2.