after the operation s 13 the lower part of the substrate 11 of the individual semiconductor packages 10 may be fixed lastly as shown in fig4 e the shield part 15 is formed on the outer surface of the mold part 14 in operation s 14 the shield part 15 is formed on the upper and side surfaces of the mold part 14 so as to be attached and integrated with the mold part 14 also the shield part 15 is formed to extend up to the side surfaces of the substrate 11 at this time the shield part 15 is also formed in the inside of the cavity 19 in the present embodiment the shield part 15 is electrically connected to the ground electrode 13 formed in the cavity 19 such a shield part 15 may be realized as a metallic thin film in this case the metallic thin film may be formed by spray coating or conformal coating the spray coating is not only suitable for the formation of a uniform coating film but also is advantageous in a reduction of costs excellent in terms of productivity and environmental friendly as compared with other film formation processes such as electroplating electroless plating or sputtering meanwhile the method of manufacturing the semiconductor package according to the present invention may include applying plasma processing to the shield part 15 after the formation of the shield part 15 in order to.