some embodiments the pattern may be interrupted by other structures the masked regions of the row mask 110 may be generally straight generally parallel to one another and may generally extend in the x direction in other embodiments the masked regions of the row mask 110 may undulate side to side or up and down or they may be segmented next as shown in fig3 row trenches 118 formed from the exposed regions between the row masks 110 and fins 120 may be formed in accordance with an embodiment of the present invention as described above the row trenches 118 may be masked with photoresist and or by forming a hard mask on the substrate 100 various sub photolithographic techniques may be used to pattern the trenches 118 such as reflowing patterned photoresist and or forming sidewall spacers on a hard mask for example once a mask is formed the 118 may be etched from the substrate 100 with for example by any suitable poly etch such as an anisotropic etch the row trenches 118 may extend in the x direction generally perpendicular to the deep isolation trenches 106 and shallow trenches 108 in the present embodiment the row trenches 118 intersect a plurality of the deep isolation trenches 106 and shallow trenches 108 the row trenches 118 may be generally parallel to each other and of generally uniform depth and width in.