for alignment a tolerance range t 1 for the left hand side area 106 of a resist region 108 lying between the cutouts 24 and 26 is more than 400 nm for example and is thus considerably greater than the tolerances that are otherwise customary for the alignment and for monitoring of the overlay measurements of 50 nm to 200 nm in an alternative configuration no alignment is carried out during the exposure of the resist layer 100 this is possible if tolerances of 1 u03bcm for example are permissible because the cutouts 24 and 26 are at such a distance away from other structures of the integrated circuit arrangement after the development of the resist layer 100 the fillings 56 and 58 are removed from the cutouts 24 and 26 so that only the liner layer 50 remains in the cutouts 24 and 26 as an alternative however the liner layer 50 is also concomitantly removed in the exemplary embodiment the fillings 56 and 58 are removed by one of the etching chemicals mentioned above the residues of the resist layer 100 that remained on the insulating layer 16 are subsequently removed as is further illustrated in fig4 after the removal of the residues of the resist layer 100 a metal layer 150 is applied e g by sputtering on an aluminum layer having a thickness of 3 u03bcm or greater than 500 nm the thickness of the metal.