belong to a single family of equivalent crystal planes for example the family of planes orienting the surfaces of the channel regions of the two transistors in this fashion improves the beta ratio of the driver and access transistors and thus greatly improves the cell stability the u03b2 ratio is the ratio of the transconductances of the driver and access mosfets or equ1 and preferably has a value of at least three using a trench driver transistor improves the bit cell capacitance application_number US 36763295 A description as discussed below the invention herein involves aligning a surface of a trench mosfet channel region along a 100 crystal plane unlike the related art that typically forms a surface of a trench channel region along a 110 crystal plane which corresponds to a cleavage plane the beta ratio for an sram cell is improved when a driver trench transistor has the surface of its channel region along a 100 crystal plane compared to a 110 crystal plane this is because electron mobility is higher along a 100 crystal plane than on a 110 crystal plane g m is proportional to electron mobility and thus the beta ratio can be improved by increasing the g m of the driver transistor however for driver trench transistors to have the surfaces of its channel regions along a 100 crystal plane the scribe lines of a.