first leveling film 719 and the second leveling film 720 a polyimide resin an acrylic resin a resin containing a siloxane structure or an inorganic sog material can be used in this embodiment an acrylic resin is used since the first leveling film 719 has a thickness of 0 3 u03bcm and the second leveling film 720 has a thickness of 1 2 u03bcm the total thickness of the films as the second interlayer insulating film is 1 5 u03bcm it is supposed that much higher flatness is realized as compared with the flatness obtained with the thicknesses in embodiment 1 by forming the double layered leveling film with the above thicknesses as the successive steps the steps of embodiment 1 shown in the drawings of fig9 b and from there on may be conducted in this way the pixel tft region including the n channel tft and the display region are formed in the pixel portion thereby obtaining a flat surface of the pixel electrode with the level differences generated by the wirings being further reduced in this embodiment the steps for fabricating an active matrix liquid crystal display device using the active matrix substrate fabricated in embodiment 1 or embodiment 2 will be described as shown in fig1 an orientation film 1001 is formed on the substrate in the state shown in fig9 c a polyimide film is used as the orientation film in this embodiment for a counter substrate 1002 a counter electrode 1003 and an orientation film 1004 are formed a color filter or a shielding film may be formed.