contact regions 128 to higher copper deposition rate this step may be carried out during a part of the electrodeposition process so that a uniform deposition profile of the depositing copper layer is achieved it is also within the scope of the present invention that such high density areas can be formed at one or more locations on the shaping plate 114 and the thickness profile of the depositing layer can be changed or controlled at will that is the thickness profile across a front surface of a wafer can be made concave convex or entirely flat with this embodiment the edge exclusion can be made zero i e the entire wafer front surface can be uniformly plated all the way to its edge as shown in fig1 a and 10b the shaping plate 114 is placed on the anode plate 118 having a plurality of holes 159 the holes 159 in the anode plate 118 and the asperities 120 in the shaping plate 114 form continuous electrolyte channels 160 connecting an inner cavity 162 of the anode cup 116 which is filled with electrolyte during the process to the upper surface 119 of the shaping plate 114 electrolyte enters the anode cup in the direction of arrow 122 and flows through the channels 160 in the direction of arrows 164 there may be filters not shown placed in the inner cavity 162 to catch the particles generated by the dissolution.