intermediate and high power capacity the component carries a monolithically integrated circuit performing the functions of signal processing level transformation gate driver amplification generation and monitoring of operating voltages short circuit monitoring by means of collector emitter voltage detection as well as the processing storing and transmission of error signals for a power semiconductor switch application_number US 27249302 A description the inventive semiconductor component will be explained through the example of a three phase bridge circuit fig2 it can be described as a single gate driver ic 11 with input interface level transformation as well as driver and monitoring functions which can be universally used for the control of the top und bottom switches the separate driver stages of the 6 switches used in the example can be at the maximum positive intermediate circuit voltage e g 300v 1700v dc for reasons of isolation the switches need to have potential separation e g by means of transmitters 3 the control system in fig2 further includes a controller 1 and a control circuit 10 on the primary side the inventive solution for a single gate driver ic will be explained through the block schematic of fig3 which contains the most important circuit parts functions connections as well as inputs and outputs of the semiconductor component an example of a semiconductor component is presented which was realized in a cmos high voltage technology in which the following igbt gate driver functions are implemented gate driver for u201c gentle u201d slow switching off of the igbt 18 internal operating voltage and reference voltage generation 19 and monitoring 20 short circuit monitoring of the.