surface 33 of the notch 32 of the magnetic memory 30 to be recorded the recording operation for another magnetic memory 30 can be performed in the same manner as the upper right magnetic memory 30 for example when the current i 1 is flowed upward in the top conducting wire 42 and the current i 2 is flowed right in the bottom conducting wire 52 the center magnetic memory 30 is recorded by the synthetic magnetic field b generated from the currents i 1 and i 2 to create a right handed clockwise magnetization as shown in fig2 a in the magnetic layer 21 the recording operation can be performed at every magnetic memory 30 but can be at some magnetic memories 30 the reading operation for the magnetic memory array shown in fig5 can be performed by utilizing the change in electric resistance of the magnetic memory 30 recorded on the relative direction in magnetization between the additional magnetic layer 23 and the magnetic layer 21 in this case the magnetization of the additional magnetic layer 23 is pinned by the antiferromagnetic layer 24 through the bond with exchange interaction for example when the magnetization of the magnetic layer 21 is parallel to the magnetization of the additional magnetic layer 23 the electric resistance of the magnetic memory 30 is decreased.