it is to be noted that the metallization layers are used to connect some pads to have access to some components of said semiconductor such as resistances inductances and capacitances and that the oxide layers are used as insulating layers between the metallization layers it is to be noted that the second doping zone z_diff 2 seals off the element of the resonator hermetically so that said element is still free to move although there are some other layers added on the substrate it is to be noted that this method of manufacturing a resonator within a semiconductor device can be integrated in a method of manufacturing an integrated circuit that comprises elements other than the resonator thus a resonator with good quality factor q is manufactured in a simple manner indeed the distance between the two electrodes and the element of the resonator is very small from 0 1 to 1 u03bcm that is the thickness of the oxide deposit m_oxi which provides an efficient coupling without energy losses the element vibrates mechanically at a precise frequency thus the slight resistive losses associated with a pure vibration render possible a good resonance frequency it is known that the q factor is inversely proportional to the resistance another advantage is that while the resonator is being manufactured the hermetical sealing of the resonator and thus of the substrate is obtained with no added process step contrary to the prior art where further complex.