grained silicon on an inexpensive substrate these semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays application_number US 201414341433 A description fig1 shows a thin film of a si u2014 au alloy 2 deposited on a non single crystal substrate or template 1 such as a glass substrate the film 2 is about 100 nm in thickness the composition is chosen such that the liquidus temperature is slightly below the glass softening temperature for example for soda lime glass the softening temperature is u02dc 600 u00b0 c and in one non limiting embodiment the composition chosen for au u2014 si system is between 18 and 30 atomic si the substrate 1 with the au u2014 si film 2 is placed in a vacuum chamber or in an inert environment in which si stays relatively pure as shown in fig2 a heat source 3 shaped as a line source and with radiant heat is focused on to the film 2 surface the heat source 3 is placed at one end of the substrate 1 with film 2 thereon and then moved slowly across the substrate 1 in one example the heat melts the au u2014 si film 2 at a temperature between the eutectic temperature in this case 363 u00b0 c and the liquidus temperature in this case lt 600 u00b0 c such that the eutectic alloy thin film remains in solid phase and coexists with an au rich liquid phase according to the phase diagram as the heat source 3 moves away from the liquid zone see fig3.