50 nanometer thick layer of titanium nitride tin over the transistor contacts as an adhesion layer and a diffusion barrier however other embodiments provide an adhesion layer of titanium nitride after depositing the conductive material the exemplary method removes excess material for example using a chemical mechanical planarization or polishing procedure next as fig3 shows the exemplary method forms a mask layer 220 over conductive structure 218 mask layer 220 includes an opening via 220 a which exposes a portion of conductive structure 218 and a trench 220 b which intersects opening 220 a exemplary formation of conductive structure follows a procedure similar to that used to form mask layer 216 and occurs with at least a portion of mask layer 216 still in place fig4 shows that the exemplary method next forms a conductive structure 222 on mask 216 with portions of structure 222 contacting exposed portions of conductive structure 218 in the exemplary embodiment this entails depositing a 20 30 nanometer thick copper silver or gold based seed layer and electroplating additional copper silver or gold based material to an exemplary thickness of 0 5 microns excess material is then removed using a chemical mechanical planarization or polishing procedure subsequently one or more higher level conductive structures can be formed similarly fig5 shows that after forming conductive structure 222 the method removes at least a.