platinum nickel alloy other suitable materials are for example chromium tantalum palladium or aluminium in order to insulate the semiconductor circuit elements and the buried zone 4 electrically from other elements within the semiconductor body 1 for example a similar zone extending parallel to the buried zone 4 with associated semiconductor circuit elements the semiconductor body 1 comprises separation zones 9 of the p type which are provided for example by means of a deep diffusion through the n type epitaxial layer 3 the semiconductor circuit element is present at the area of a crossing of the buried zone 4 belonging to a group of lines of the cross bar system and a conductor 10 this conductor 10 belongs to another group of lines of the cross bar system and in this example forms part of a word line a blowable fuse 11 at its one end is connected electrically conductively to the electric conductor 10 the other end is electrically conductively connected to the semiconductor circuit element namely to the electrode 8 the blowable fuse is situated at a distance from the supporting member the semiconductor body 1 including passivating layer 6 and a nitride layer 8 provided thereon and according to the invention is present in a hollow space 21 the wall of which opposite to the circuit element comprises.