formation of ti x al 1 x n y and ti x n 1 x in the metal stack the reflectance curve of the exposed annealed metal stack as measured according to the procedures discussed above is depicted in fig6 line 60 shows that the reflectance of the stack is at or below about 2 over the 100 450 nm wavelength range in another method according to the present invention a 500 u00e5 thick layer of titanium was deposited on a generally planar boronphosphosilicate glass substrate using direct current magnetron sputtering a 5000 u00e5 thick layer of aluminum was deposited on the titanium layer using direct current magnetron sputtering in the same tool after which a second layer of titanium having a thickness of about 500 u00e5 was then deposited over the aluminum layer using direct current magnetron sputtering in the same chamber used to deposit the first titanium layer all layers were substantially homogenous in composition the wafer was then placed in an annealing chamber and annealed at 480 u00b0 c for a period of three minutes the chamber was flooded with nitrogen at 3 torr during annealing to promote the formation of ti x al 1 x n y and ti.