resistance is increased beyond tolerable levels rendering them impractical for use as gate electrode metals accordingly a need exists for processes for producing water for use in semiconductor fabrication which minimizes the risk of oxidizing metal gates while reducing the risk of hydrogen explosions and excessive boron diffusion fig5 is a block diagram showing a system for producing water in accordance with a preferred embodiment of the invention ammonia gas nh 3 is supplied to a mixing section 500 via an ammonia gas line 502 an oxidant is supplied to the mixing section 500 via a gas line 504 the mixing section 500 may simply be a regular in pipe gas mixing system or a gas mixing mechanism designed to discharge ammonia gas into the oxidant gas in a swirling stream to uniformly mix the reactant gases the molar ratio of ammonia to oxidant gas can be set and altered using mass flow controllers 506 a and 506 b and valves 508 a and 508 b the ammonia gas and oxidant gas mixture is preferably supplied via a common inlet line 510 into a water producing apparatus 512 the water producing apparatus 512 of various embodiments is depicted in greater detail in fig9 through 11 in the illustrated embodiment the oxidant gas comprises oxygen o 2 gas an ammonia and oxygen gas mixture is catalytically converted into reaction products comprising nitrogen gas n 2 water vapor h 2 o any excess oxygen gas or ammonia gas and nitrogen based oxides according to the following equation 4nh 3 3o 2 u2192 6h 2 o 2n 2 a n x o y 1 a preferred mole ratio of ammonia to oxygen ranges from.