ap2 and m ap3 of the first second and third ap pinned layers 422 424 and 428 and generally parallel with the abs pinned layer 465 also has a magnetization direction m p which is toward the abs and in parallel with magnetization direction m ap3 referring again to fig4 b in the ap pinned sv sensor 400 there are five magnetic fields that influence the free layer 450 magnetization as summarized in table i table i______________________________________field field description______________________________________h sub ib field generated by the current flowing in the layers below the free layer 450 as seen from the abs h sub fc field generated as a result of ferromagnetic coupling between the free layer 450 and second and third ap pinned layers 424 and 428 h sub demagap field generated due to the demagnetization of the ap pinned layer 420 h sub ia field genrated by the flow of the current in the layers above the free layer 450 as seen from the abs andh sub demagp field generated due to the demagnetization of the pinned layer 465 ______________________________________ as shown on fig4 b the addition of the pinned layer 465 results in the generation of two new fields h ia and h demagp with their influence on the free layer 450 being opposite to the influence of h ib and h demagap fields by appropriate selection of the pinned layer 465 thickness the magnitude of the h ia field and its counterbalancing effect on the h ib field can be controlled in the preferred embodiment of the present invention the thicknesses of the layers forming the central region of the ap pinned sv sensor 400 were chosen as summarized in table ii table ii______________________________________ap pinned sensor 400layer material thickness______________________________________415 afm nio 400a422 first ap pinned nife 10a424 second.