produce an u201c electron channeling pattern u201d ecp a representative ecp for 111 silicon is shown in fig2 a the bse signal amplitude for a scan along the line b u2014 b is shown in fig2 b more specifically fig2 a shows an exemplary profile or map of u201c kikuchi bands u201d 12 produced by scanning a 111 surface of silicon with an electron beam the scanning is performed over coordinates in the x and y directions along each thick line 12 in fig2 a the bse signal is reduced compared to other regions as a result of interactions of the incident electrons with atoms of the crystalline surface in fig2 a the abscissa horizontal axis is the x direction deflection output to the beam and the ordinate vertical axis is the y direction deflection output to the beam thus fig2 a indicates a map of results of respective summed deflections of the beam in the x direction and in the y direction a representative bse signal detected by a bse detector of an electron beam scanned along the line b u2014 b of fig2 a is shown in fig2 b hence as shown in fig2 a the bse signal is weaker at certain direct relationships between the x direction deflection output and the y.