412 if the cell is conductive then the data value in the cell is 1 0 step 413 if the cell is not conductive at step 412 then the cell holds the data value 1 1 step 414 thus the state machine according to fig6 is programmed to do a binary search technique which requires a two step read for all cells an alternative approach is illustrated in fig7 in which the process of reading the multi level cells begins by setting the channel well to the second level step 500 for a p channel rom device such as illustrated in fig5 the second level is about minus 2 volts for example next the selected wordline is set to a first read voltage step 501 in this embodiment the first read voltage corresponds to the voltage v wl4 at point 61 in fig2 the process then determines whether the cell is conductive or not step 502 if the cell is not conductive then it is determined that the cell holds the data value 1 1 step 503 if the cell is conductive then the selected wordline is set to a second read voltage step 504 after step 504 it is determined whether the cell is conductive or not step 505 if it is not conductive then the cell holds the value 1 0 step 506 if the cell is conductive at step 505 then the selected wordline is set to a third read voltage step 507 the third read voltage corresponds to the level v wl2 at point 63 in fig2 next it is determined whether the cell is conductive at the third read voltage step 508 if it is not conductive then it is determined that the cell holds the data value 0 1 step 509 if the.