controlled trajectory paths in accordance with an exemplary embodiment fig5 illustrates diagram 500 where trajectory path of an implantation beam pulse 111 is altered by applying an electric field 135 e g by an ion implanting device to provide a trajectory path 137 that may have a better angle e g 45 degrees with reference to the sidewall surfaces of the fin 113 b so that the sidewall surfaces may be implanted with dopants to the same depth and concentration levels as the top surface of the fin 113 b alternatively a plurality of electric fields with different directions not shown for illustrative convenience may be applied to the implantation beam pulse 111 wherein the combined electric field is synchronized to the implantation beam pulse fig6 a and 6b illustrate top and cross sectional view respectively of an ic device that includes multiple logic gates 119 a and 119 b in accordance with an exemplary embodiment as shown in fig6 b along a cross sectional line 6 b 6 b u2032 in fig6 a a magnetic field 139 with a direction perpendicular to plane in view is applied to the implantation beam pulse 111 to produce a trajectory path 141 alternatively the electric field 137 shown in fig5 as well as the magnetic.