of the antifuses 220 to be programmed although the antifuses 220 are illustrated as being plate type antifuses the application of the present invention is not so limited and the antifuses 220 may be of the transistor type as well the antifuse circuit 200 is illustrated as having one disconnect transistor 210 to service a bank 225 of antifuses 220 generally the disconnect transistor 210 is provided for isolating the bank 225 from the program voltage at the terminal 240 between program events it is contemplated that in some embodiments each antifuse 220 may have its own disconnect transistor 210 the n designations on the bank sel and sel signals indicate that multiple banks 225 and multiple select signals may be provided the disconnect transistor 210 and select transistors 230 are designed and fabricated such that the select transistor 230 enters a snapback mode of operation after the initial rupture of the antifuse 220 while the disconnect transistor 210 remains in a normal mode of operation in a snapback mode of operation the select transistor 230 exhibits increased current conduction with a given applied voltage as compared to a transistor operating in the normal mode below the breakdown voltage generally this increased current conduction mode allows the select transistor 230 to conduct sufficient soak current to perfect the programming of the antifuse.