exposure process thus in performing a photolithography process the processability index increases in terms of alignment margin exposure or mask drawing referring to fig4 b and 4c a second color filter layer 120 is coated on the entire surface of the passivation layer 20 including the first color filter pattern 110 the second color filter layer 120 is not thickly coated on the edge of the first color filter pattern 110 due to the positive slope 112 of the first color filter pattern 110 the second color filter layer 120 is then selectively exposed using a mask to form a second color filter pattern 120 a alternatively an etch back or cmp process may be performed on the second filter layer 120 until the upper surface of the first color filter pattern 110 is exposed thereby forming a second color filter pattern 120 a subsequently the interface between the first and second color filter patterns 110 120 a has a slope 130 the second color filter pattern 120 a is formed to have the slope 130 by the pattern profile of the first color filter pattern 110 thus process margin increases in exposure and development processes the interface of the first and second color filter patterns 110 120 a is formed without a step difference therebetween a decoloring effect may be obtained at this interface portion resulting in a light shielding effect referring to fig5 the slope 130 is inclined at a predetermined angle of u03b8 to have an.