of polymer adhesion to recessed portions of the stamp in fig1 a relief surface 1008 of stamp 1000 is exposed to an oxygen plasma 1004 oxygen plasma 1004 oxidizes relief surface 1008 oxidation facilitates covalent bond formation between relief surface 1008 and chlorosilane compounds after oxidation relief surface 1008 is placed in conformal contact with a flat surface 1104 as shown in fig1 a silicon wafer may be used as a typical flat surface a first chlorolsilane vapor such as benzyltrichlorosilane bts gas introduced into chamber 1108 surrounds stamp 1000 the first chlorosilane vapor wicks into relief surface channels contacting recessed regions 1112 the walls of the recessed regions thus form covalent bonds with the first chlorosilane compound raised portions of the relief pattern in contact with flat surface 1104 avoid contact with the first chlorosilane vapor after flat surface 1104 is removed the relief surface 1008 is exposed to a second chlorosilane compound 1204 such as tridecafluoro 1 1 2 2 tetrahydrooctyl trichlorosilane fts as shown in fig1 the second chlorosilane compound differs from the first cholosilane compound in that the second chlorosilane compound reduces the surface energy of the treated surface second chlorosilane compound deposition may occur either by vapor.