finalized integrated circuit structure 58 furthermore the preferred embodiment which includes the given etch recipe results in less carbon build up within the reactive ion etching chamber one method aspect of the present invention will be summarized with respect to fig1 the manufacturing process begins in step 200 where conductive and oxide layers are formed over the substrate then in step 202 a photoresist mask is formed over the oxide layer the oxide layer is etched and polymer sidewalls are formed in subsequent steps 204 206 and 208 where respectively the rf chamber is filled with gases the bulk etch is accomplished and the overetch is performed preferably etching is performed by a process which produces minimal carbon residue in the chamber next in a step 210 the conductive layer is etched according to the photoresist mask and the polymer sidewalls then in a step 212 the photoresist and the polymer sidewalls are stripped finally in step 214 additional processing steps are performed while the additional steps can include a variety of processes the most relevant is the application of layers which tend to be self planarizing due to the pyramid shaped structure of the present invention while this invention has been described in terms of several preferred embodiments there are.