entitled 34 oxide structure in evaporated aluminum film 34 journal of applied physics volume 45 no 7 july 1974 pages 2858 2866 as an example of the results of our novel process and structure shown in fig1 and 3 we have achieved a low barrier height schottky barrier diode having a barrier height of 0 47 electron volts the barrier height remains stable even when the diode is annealed at a temperature of up to 500 u00b0 c for one hour this temperature time factor far exceeds what could be expected in an operating environment and has been shown to be an accurate test of long term stability of semiconductors the ideality factor u03b7 is initially 1 0 as deposited and rises to 1 1 after the heat treatment this ideality factor is quite acceptable for schottky barrier diodes this example has been included merely to aid in the understanding of the invention and variations may be made by those of skill in the art without departing from the spirit and scope of the invention as an alternative to the preferred method of evaporating the metallurgical system previously described radio frequency rf sputtering could also be used a typical sputtering tool is the multi target sputtering tool model 822 sold by materials research corporation a leak valve may be incorporated for introducing water air or oxygen into the sputtering chamber the sputtering of the transition metal and the aluminum can be done without breaking the vacuum i e in.