element includes a film configured to transmit the extreme ultraviolet light and a shield placed on the film and configured to shield part of said film from the extreme ultraviolet light application_number US 37316806 A description preferred embodiments of the present invention will now be described in detail in accordance with the accompanying drawings in the following embodiments description will be given of suitable construction of the following parent materials used on an exposure apparatus which employs euv light as a light source 1 parent material for a mark provided on a light quantity sensor on a wafer stage and used for ttr measurement 2 parent material for a mark provided on a ccd camera on the wafer stage and used for measurement of aberration in a projection optical system and these parent materials are thin films of particular materials not exceeding a certain thickness they are sufficiently transparent to euv light thus by placing a light shielding member on the parent material it is possible to create a desired optical element such as a desired mark or diffraction grating fig1 is a schematic diagram illustrating a schematic configuration of an exposure apparatus according to a first embodiment the same components functions as those in fig8 are denoted by the.