component using the accuracy of the epi crystal growth technology the pedestal height can be controlled at the angstroms tolerance level an optical component layer 46 is then deposited onto pedestal layer 44 optical component layer 46 should be deposited at a thickness correlating to the maximum required lens dimensions at least 20 microns thick indium phosphide inp is also chosen for optical component layer 46 because of its etching characteristics as well as its ability to form a high index lens with low aberrations in an alternative preferred embodiment the optical component layer 46 and substrate 42 may be comprised of gallium arsenide gaas whereas the pedestal layer 44 is comprised of aluminum gallium arsenide algaas it is important to note that other materials can be used for these various layers for example the optical component layer 46 and substrate 42 may be any iii v semiconductor material and may include indium phosphide inp gallium arsenide gaas indium arsenide inas and gallium phosphide gap moreover although two different materials having similar thermal expansion coefficients may be used the same material is preferably used for both optical component layer 46 and microbench substrate 42 in this way optical alignment problems caused.