of the amplification circuits while the gradient of that direction is set as may be necessary that direction is preferably set as the direction vertical to the direction of repetitive disposition of the amplification circuits as in this embodiment in terms of layout while the pitch of repetitive disposition of the amplification circuits is designed so as to correspond to the pixel pitch in many cases the pitch of repetitive disposition of the amplification circuits may be designed so as to be wider or narrower than the pixel pitch in some cases as described above the direction of the channel length of the source grounded field effect transistor 124 is set in the direction different from the direction of repetitive disposition of the amplification circuits whereby the channel length of the source grounded field effect transistor 124 can be provided so as to be long without being limited by the pitch indicated by x 1 in fig1 of repetitive disposition of the amplification circuits in particular this is suitable for a case where the channel length is set longer than the pitch of repetitive disposition of the amplification circuits in addition an open loop gain becomes larger as g m transconductance of the input transistor 125 of the operational amplifier amplification circuit is larger thus the direction it can be grasped as a direction of flow of a drain current of the channel length of the input transistor 125 is desirably set in the direction different from the direction y axis direction vertical to the direction of repetitive.