in association with the liquid temperature or the like whereby the control can be performed based on the set value of the controlled variable the above mentioned preheating tank 30 preheating heater 31 second pump 33 rapid heating heater 34 liquid temperature measuring instrument 35 and current carrying control unit 36 constitute a rapid heating unit b the above mentioned single wafer cleaning apparatus 40 includes a nozzle 41 turned to an electronic material substrate 100 that is a cleaning object being carried in and a rotary table 42 for placing and rotating the electronic material substrate 100 on which the sulfuric acid solution is sprayed or dripped little by little by the nozzle 41 as cleaning liquid further the cleaning apparatus 40 includes a sulfuric acid solution recovery part 43 for recovering droplets of the sulfuric acid solution used for the cleaning and an upstream reflux line 45 with a first reflux pump 44 interposed therein is connected to the sulfuric acid solution recovery part 43 the above mentioned cleaning apparatus 40 nozzle 41 rotary table 42 and sulfuric acid solution recovery part 43 constitute a cleaning unit c although the single wafer cleaning apparatus is described in this embodiment the type of the cleaning apparatus is not limited thereto and a cleaning apparatus of batch type or the like may be adopted the upstream reflux line 45 is connected to a decomposition tank 50 to temporarily store the sulfuric acid solution used for cleaning the decomposition tank 50 corresponds to the decomposition part of the present invention a downstream reflux line 52 is connected to the decomposition tank 50 through a second reflux pump 51 and a cooler 53 which corresponds to the second cooling part.