adapted to a respective standard method or a respective carrier material tm in accordance with fig1 a as the topmost layer a semiconductor mask layer hm may be formed on the carrier material or the hard mask layer hm u2032 preferably a thin amorphous semiconductor layer such as e g a silicon semiconductor layer with a thickness of 10 nm to 20 nm being deposited at a temperature of 500 to 600 degrees celsius it is also possible to use other methods for forming the semiconductor mask layer and in particular other semiconductor materials can thus be produced in particular the interaction of the perpendicular implantation with a small layer thickness of the semiconductor mask layer hm and the energies mentioned above makes it possible to lithographically fabricate fine structures not previously achieved the above described p type doping may be effected in an undoped or weakly p doped semiconductor mask layer hm however n type dopings in an undoped or weakly n doped semiconductor mask layer hm or opposite dopings for doping the semiconductor mask layer hm are also possible different types of focused ion beam methods are possible for the above described direct writing to the semiconductor mask layer hm by way of example in a single source u2014 single beam method a single ion beam can be.