about 30 nm a solids content of less than about 30 wt and a ph modifier to maintain a ph of at least 7 during the cmp process this conventional slurry composition in both unmodified form and as modified by the addition of about 0 02 vol of a polymeric surfactant according to the exemplary embodiments of the present invention to prepare a exemplary slurry composition test substrates were then polished under substantially identical cmp conditions using the conventional and exemplary slurry compositions after the polishing was completed the polished substrates were cross sectioned and imaged on a scanning electron microscope sem to produce micrographs reproduced as fig4 a and b as reflected in the fig4 a the conventional abrasive slurry composition resulted in distinct cupping of the polysilicon regions between the spacer structures conversely the addition of the minor amount of polymeric surfactant according to the invention was sufficient to suppress the excessive removal of the polysilicon layer the magnitude of the polysilicon recesses reflected in the samples was then evaluated to generate the data reflected in table 1 as reflected in table 1 therefore even the addition of a relatively minor portion of the exemplary polymeric surfactants i e 0 02 vol produced a reduction in the depth of the polysilicon recess of more than 90 the consumption of the exemplary polymeric surfactants in a cmp process may be reduced by limiting its use to only the final portion of the polysilicon cmp process this practice by not prematurely suppressing the polysilicon removal will allow process throughput to be maintained at near conventional levels while still providing the improved planarity of the exemplary cmp methods it will be apparent to those skilled in the art that other changes and modifications may be made in the.