the memory cell thus fabricated is completed by customary process steps for example by application of an intermediate oxide contact hole etching and production of a metallization layer the finished fabricated memory cell can be programmed in the manner explained below with reference to fig8 to that end charge carriers are generated on the source 60 that are injected into the first floating gate electrode 40 on account of a potential difference at the boundary with respect to the first floating gate electrode 40 given suitable voltage conditions in which the second select gate gate electrode 120 has a voltage lying somewhat above the threshold voltage of the vertical transistor formed by the drain 45 the source 60 the channel 25 the second gate dielectric 115 and the second gate electrode 120 there is only a very small current flow this constitutes a difference from known programming with hot charge carriers in which the transistor is operated at saturation voltage the voltage present at the second gate electrode 120 can be chosen in a manner dependent on a desired programming time in the case of the memory cell according to the invention this voltage varies between an externally applied operating voltage and the threshold voltage of the vertical transistor if the voltage is equal to the threshold voltage then the programming time is long but only a very small current flows therefore the power required for the switching operation is very.