and thus a mesa surface 32 is formed on a first semiconductor layer 30 in the plurality of semiconductor layers 30 40 and 50 once the mesa surface 32 is formed an isolation process can also be done on the plurality of semiconductor layers 30 40 and 50 in advance with this configuration after the formation of the mesa surface 32 the active layer 40 may have a protective layer e g sio 2 it becomes a part of an insulating layer 110 which in turn would enhance the reliability of the device in the subsequence processes fig1 is a view illustrating examples of the form of a growth substrate removed surface in the semiconductor light emitting device shown in fig1 the growth substrate removed surface 102 can be formed on one side two sides not shown three sides or the four sides of the semiconductor light emitting device or can simply be an opening form to avoid redundancy in explaining like or similar elements designated by the same reference numerals will not be explained the electrical connection 93 may be positioned in the growth substrate removed surface 102 or on the interface separating a chip from another fig1 is a view illustrating examples of the form of an electrical connection according to the present disclosure in which a shows that two electrical connections 93 are formed and b and d show that a finger electrode 93 a is provided to the electrical connection 93 this configuration is applied to the semiconductor light emitting device shown in fig1 in c an electric contact 81 is provided by removing an insulating layer 111 to expose a bonded layer 90 by employing the electric contact 81 and the electrical connection 93 probing and sorting can.