material such as polysilicon and barrier layer 28 include materials such as for example tan tasin tin or equivalents to reduce diffusion between lower electrode 24 and plug 26 lower electrode 24 preferably includes a noble metal such as platinum ruthenium and or noble metal oxides such as ruthenium oxide an amorphous metallic oxide dielectric film is deposited at a low temperature and plasma treated in accordance with the present invention to crystallize a capacitor dielectric layer 30 since layer 30 is deposited and treated at low temperatures for short durations oxidation of barrier layer 28 and plug 26 due to ambient conditions is reduced oxidation occurs with conventional processes at barrier layer 28 and plug 26 this is substantially reduced by the present invention since mass transport mechanisms such as diffusion are reduced by reducing the concentration temperature and availability duration of oxygen in most conventional deposition methods the higher the deposition temperature the better crystalline quality of the film however oxidation of barrier layers and increased contact resistance are experienced and the oxygen ambient therefore limits the deposition temperature in contrast with the conventional methods the present invention employs a plasma treatment at low temperatures e g 400 u00b0 c or less for short durations e g 35 second or less to achieve a crystalline dielectric film of at least the same quality as the.