furthermore lithium exchanged pyrex formed bonds at 320 u00b0 c when a voltage of 200vdc was applied a bond did not form for untreated pyrex under the same operating conditions experiments have also been conducted to demonstrate that the ion exchange technique of the present invention also works for for example six inch wafers that are bonded using a commercial bonder at low voltage namely 200vdc and 310 u00b0 c as well as at low temperature namely 250 u00b0 c and 2000vdc in both instances in less than 10 minutes six inch u00bcinch thick pyrex 7740 wafers were lithium treated for ion exchange for 45 minutes at 325 u00b0 c 250 grams of lithium nitrate were used for the ion exchange the treated samples were then subjected to a turgitol union carbide of danbury conn semiconductor surfactant scrub with clean room texwipe texwipe co llc upper saddle river n j for 1 minute and were then rinsed with deionized water to further clean the treated pyrex wafers 2030 ml of h 2 so 4 96 sulfuric acid was placed in a large quartz bowl 870 ml of h 2 o 2 30 hydrogen peroxide was rapidly poured in the sulfuric acid the treated pyrex wafer samples were then etched by the aforementioned mixture for 10 minutes for cleaning the etched pyrex wafers were then removed from the solution and again rinsed with deionized water this time for 10 minues anodic bonding was then effected using a wafer fusion bonder model evg 520 under the bonding parameters provided in the following table 3 good bonds were formed on all samples low temperature in other words below 280 u00b0 c and low voltage in other words below 500vdc anodic.