w may be relatively high compared with the plasma concentration at the center wa of the wafer w therefore as illustrated in fig2 b the thickness of the thin film 200 at portions x and y deposited on the edge wb of the wafer w may be greater than the thin film deposited at a portion z near the center wa of the wafer w the uneven thin film thickness illustrated may become more exaggerated as the diameter of the wafer w increases therefore after the thin film 200 is deposited the portion z of the thin film 200 which is relatively thin may be supplemented by the process described below fig3 a illustrates a top view of an uneven temperature distribution of a wafer in a thin film deposition method according to an embodiment of the present invention fig3 b illustrates a sectional view of an uneven thin film thickness caused by temperature variations in a thin film deposition method according to an embodiment of the present invention referring to fig3 a the temperature within the apparatus 100 may be manipulated so that the edge wb of the wafer w may have a temperature lower than the center wa of the wafer w the deposition process may require heat within a particular range depending upon the materials to be deposited thus.