5 d and 5 e 5 e of fig5 a illustrating continuing fabrication of a pixel sensor cell according to embodiments of the present invention in fig5 a and 5b gate electrodes 125 130 135 140 and 145 are foamed bold lines illustrate perimeters of gate electrodes 125 130 135 140 and 145 in one example gate electrodes 125 130 135 140 and 145 may be simultaneously formed by depositing a gate dielectric layer then a polysilicon layer on the gate dielectric later followed by photolithographically defining and then etching away unprotected by the patterned photoresist layer regions of the polysilicon layer fig5 f is a cross section illustrating gate structures through line 5 b 5 b of fig5 a in fig5 f gate dielectric layers 126 131 136 141 and 146 intervene between respective gate electrodes 125 130 135 140 and 145 and semiconductor layer 100 there are five gate electrodes as the completed pixel sensor cell will be a five transistor pixel sensor cell fig6 a is a top view and fig6 b 6 c 6 d and 6 e are cross sections through respective lines 6 b 6 b 6 c 6 c 6 d 6 d and 6 e 6 e of fig6 a illustrating continuing fabrication of a pixel sensor cell according to embodiments of the present invention in fig6 a 6 b and 6 c a photodiode body 150 is rained in semiconductor layer 100 photodiode body 150 is formed in one example by photolithographically defining and then ion implanting selected regions of substrate 100 in one example photodiode body 150 is.