structure which ensures against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition or chemical vapor deposition is realized by first providing a continuous polysilicon layer prior to the refractory material deposition the continuous polysilicon layer preferably no thicker than 50 u00e5 serves a sacrificial purpose and prevents damage to an underlying silicide layer by blocking interaction between any fluorine and the underlying silicide that is released when the refractory material is formed application_number US 70917404 A description as indicated above the present invention is aimed at providing a method that ensures against contamination of an underlying suicide substrate by any constituent of a refractory conducting layer during its deposition into the desired structure referring to the structure illustrated in cross sectional view in fig2 note that a silicide layer 100 of the order of 300 800 u00e5 in thickness and deposited on a silicon substrate 150 typically serves as a substrate for an oxide layer 102 deposited thereon with a through opening 104 defined therein with a liner layer 200 deposited at the bottom 106 of opening 104 in known manner liner layer 200 may comprise at least one of titanium titanium nitride tungsten and an alloy of titanium and tungsten and may incidentally be deposited on the oxide layer 102 the preferred method according to this invention includes these steps of the prior art in the prior art as best understood with reference to.