presenting a silicon source gas to the semiconductor memory assembly to form a continuous conductive silicon film used as a first capacitor electrode forming a capacitor dielectric on the first capacitor electrode and the oxide layer and forming a second capacitor electrode on the capacitor dielectric application_number US 29363699 A description exemplary implementations of the present invention are directed to processes for forming selectively deposited silicon in a semiconductor device as depicted in the embodiments of fig1 a 1 b 2 a 2 b and 2 c referring to fig1 a substrate 10 is prepared for the processing steps of the present invention substrate 10 must be a silicon rich material such as a conductively doped silicon wafer a consecutively doped polysilicon plug that connects to an underlying access device other examples of preferred silicon rich materials include conductively doped amorphous silicon and the like for purposes of the present invention a silicon rich material is defined as a material that promotes the nucleation of silicon atoms on its surface during a silicon deposition process that presents a silicon source gas to the surface of an in process semiconductor assembly such as to substrate 10 a silicon resistive material 11 of a desired pattern is formed on substrate 10 for purposes of the present invention a silicon resistive material is a material that resists the formation of continuous silicon layer during a silicon deposition process that presents a silicon source gas to its surface examples of silicon resistive materials are oxides boro phospho silicate glass bpsg and tetra ethyl ortho silicate teos next silicon rich material 10 and silicon resistive material 11 are subjected to.