the compositions to prevent their exposure to permanent or long term property changing effects due to temperature in practice however sometimes manufactures do not know if in fact the composition has in fact never been exposed to a property changing temperature in at least one embodiment the invention allows a user to determine the concentration of hf and or other properties to determine the etch rate of an etching composition even if the composition was exposed to a property changing temperature or if such exposure cannot be otherwise determined as it gets diluted the buffering capacity of a boe solution degrades and the effect changes in temperature have on the etch rate can be enormous for example a well buffered boe solution could react to a 2 u00b0 c increase in temperature with a 10 nm minute increase in etch rate but less buffered solution could respond to that same temperature increase with a 150 nm minute increase in etch rate in at least one embodiment the method uses the amount or changes in the amount of hf concentration to determine and or change the buffering effectiveness of the boe and the result that temperature and changes in temperature will have on etch rate in at least one embodiment the manufacturing method utilizes the measurements of free hf and or surfactant to address undercutting.