thorough understanding of the present invention however it will be appreciated by one of ordinary skill in the art that the invention may be practiced without these specific details in other instances well known structures or processing steps have not been described in detail in order to avoid obscuring the invention it will be understood that when an element as a layer region or substrate is referred to as being u201c on u201d or u201c over u201d another element it can be directly on the other element or intervening elements may also be present in contrast when an element is referred to as being u201c directly on u201d or u201c directly over u201d another element there are no intervening elements present it will also be understood that when an element is referred to as being u201c beneath u201d or u201c under u201d another element it can be directly beneath or under the other element or intervening elements may be present in contrast when an element is referred to as being u201c directly beneath u201d or u201c directly under u201d another element there are no intervening elements present a preferred embodiment of the present invention is illustrated in fig2 a multiple deposition tensile capping layer 40 is formed only on the copper interconnect 10 a single deposition compressive capping layer 41 is formed only on the ild 20 surface in the present invention specially tailored cvd deposition parameters and used in conjunction with a post deposition surface treatment in between capping layer depositions to provide a tensile stress capping layer on the interconnects in a preferred embodiment a single deposition will deposit less than approximately 50 u00e5 in a preferred embodiment the multiple layer tensile capping layer 40 is comprised.