mask e g silicon dioxide may be deposited on the silicon film fin structure 1030 may then be formed via for example e beam lithography and etching source and drain regions 1010 and 1020 may then be formed in a similar manner once source region 1010 drain region 1020 and fin structure 1030 have been formed source region 1010 and drain region 1020 may be covered with a protective mask as illustrated in fig1 a number of materials may be used for the protective mask such as a silicon nitride based material the thickness of the unprotected fin structure 1030 may then be reduced to form a thin fin structure 1230 as illustrated in fig1 this thinning of fin structure 1030 may be accomplished via etching or some other well known technique implementations consistent with the principles of the invention provide double gate and triple gate finfet devices unlike conventional designs each of the gates in the finfet can independently control the fin channel the foregoing description of exemplary embodiments of the present invention provides illustration and description but is not intended to be exhaustive or to limit the invention to the precise form disclosed modifications and variations are possible in light of the above teachings or may be acquired from practice of the invention for example in the above descriptions numerous specific details are set forth such as specific materials structures chemicals processes etc in order to provide a thorough understanding of the present invention however the present invention can.