a sheath of electrode metal 424 after the electrode metal 424 is deposited an oxide layer is deposited and patterned as shown in fig4 i to form a mirror support pillar etch stop 428 a hinge cap etch stop 430 and an address electrode etch stop not shown the mirror support pillar etch stop 428 is patterned to protect both the mirror support pillar and the hinge yoke from the subsequent etch step after patterning the etch stops the electrode metal layer 424 and the hinge metal layer 418 are both etched leaving only the portions of the metal layers protected by the etch stops as shown in fig4 j the etch stops 420 428 430 are then stripped off as shown in fig4 k a second photoresist spacer layer called the mirror spacer layer 432 is then spun onto the wafer see fig4 l and etched back to provide access to the tops of the mirror support pillar 426 and to planarize the second spacer layer as shown in fig4 m a mirror metal layer 438 is deposited onto the second spacer layer 432 and the top of the support pillar 426 typically the mirror metal layer is sputter deposited 4250 angstroms thick another oxide layer is plasma deposited and patterned to form a mirror etch.