the drain current due to channel length modulation effect of the transistors m 3 and m 4 can be made smaller further because the transistor m 5 and the transistor m 6 which operate as the cascode circuits are formed of n channel depletion type mos transistors impedance of a small signal between the source terminal and the drain terminal due to parasitic capacitance can be made higher and the power supply rejection ratio at a low frequency lt 1 khz can be made higher fig2 illustrates a voltage level shift circuit according to a second embodiment of the present invention in the circuit illustrated in fig2 portions surrounded by broken lines 100 operate as voltage level shift circuits while a portion surrounded by a broken line 101 operates as a differential amplifier circuit further the circuits illustrated in fig2 are formed on a p type substrate a p channel enhancement type mos transistor m 1 operates as a source follower circuit with a constant current source formed of an n channel depletion type mos transistor m 3 being a load and functions to shift a direct current component of the input voltage to a positive power supply voltage side and to output the shifted direct.