a graph illustrating the relations between the maximum height of the unevenness and the bottom reflectance at the interface of the high refractive index film and the low refractive index film in fig1 the abscissa represents the maximum height of the unevenness nm and the ordinate represents the bottom reflectance of the high refractive index film in fig1 the dotted curve represents a case where the average diameter the average diameter of the circumcircles of the photograph taken by using a phase contrast microscope is 5 u03bcm and the solid curve plots the case where the average diameter is 20 u03bcm in order to form an anti reflection anti electrostatic charge film having little scattering of light and a low bottom reflectance it is desirable for the average diameter to be 5 to 80 u03bcm and the maximum height of unevenness be no more than 40 nm when the maximum height of unevenness is no more than 10 nm the reflection curve takes a v shape so that the dependence of the reflectance on the wavelength is intensified and the reflected light is colored blue therefore a maximum height of unevenness of no more than 10 nm is not practical when the diameter is more than 100 u03bcm on the other hand the roughness of the displayed image is undesirably increased lowering the smoothness of the displayed image in the foregoing embodiments the a t o is used as the conductive material of the high refractive index film but similar reflection characteristics were obtained when i t o was employed and an anti.