a case where the planarization is performed by polishing an amount of time until the insulation layer 330 which is formed underneath the metal layer 340 is exposed is monitored so that it may be determined for how long to perform the planarization that is as shown in fig3 d the polishing progresses until the insulation layer 330 is exposed after the planarization the metal layer 340 for the rf lines is formed in a thick film having a thickness of about 2 to 3 u03bcm in consideration of the skin depth effect for which the flattening mold 330 of the insulation layer is formed in the thick film having a thickness of at least about 2 to 3 u03bcm accordingly the metal layer 340 is formed on the anchor part a and the rf line part a u2032 to a thickness matching the thickness of the insulation layer mold previously processed so that the electrode part in which the driving electrode layer 320 and the insulation layer 330 are formed and the rf lines are evenly formed with respect to thickness i e there is no difference of step heights thus an electrostatic drive type mems relay is formed having a structure in which the driving electrode 320 thereof is embedded in the insulation layer 330 next as shown in fig3 e.