and a layer of a wide band gap doped semiconductor can then be formed on the front and back sides of the solar cell one variant involves texturizing the front and back surfaces prior to formation of the oxide and wide band gap doped semiconductor formation contact holes can then be formed through the upper layers to expose the doped polysilicon regions a metallization process then can be performed to form contacts onto the doped polysilicon layer a second group of contacts can also be formed by directly connecting metal to emitter regions on the silicon substrate formed by the wide band gap semiconductor layer positioned between regions of the doped polysilicon on the back side of the solar cell the various tasks performed in connection with manufacturing processes are shown in fig1 18 also several of the various tasks need not be performed in the illustrated order and it can be incorporated into a more comprehensive procedure process or fabrication having additional functionality not described in detail herein fig1 3 illustrate an embodiment for fabricating a solar cell 100 comprising a silicon substrate 102 a thin dielectric layer 106 and a deposited silicon layer 104 in some embodiments the silicon.