on the order of 3 microns thicknesses of insb layers 12 and 12 u2032 may but need not necessarily be identical thicknesses of inas layers 14 and 14 u2032 may but need not necessarily be identical trace amounts of other atoms or molecules dopants may be added to any of the layers 10 12 12 u2032 14 14 u2032 or 16 so as to affect the electrical conductivity of the unit cell given a basic design for the thicknesses of 10 12 12 u2032 14 14 u2032 and 16 forming a unit cell 20 p type electrical dopants are added during the deposition of these constituent layers to form unit cell 22 with p type electrical properties in similar form again starting with a basic unit cell design 20 n type electrical dopants are added during the deposition of these constituent layers to form unit cell 24 with n type electrical properties combining multiple instances of 22 and multiple instances of 20 and multiple instances of 24 in this order a p i n electrical junction may be formed within the superlattice fig5 this invention is equally valid if multiple instances of 24 are combined with multiple instances of 20 and multiple instances of 22 in this order which forms an n i p electrical.