forming an al film or a metal film mainly composed of al on the al film selectively deposited and on an insulating layer sio 2 film or the like under application of a non selective film forming process such a metal film specifically includes the following combinations of any of selectively deposited al al si al ti al cu al si ti and al si cu and non selectively deposited al al si al ti al cu al si ti and al si cu a selective cvd apparatus in particular an al cvd apparatus will be described below with reference to fig3 as shown in fig3 the apparatus is comprised of load block chamber 311 a cvd reaction chamber 312 as a first film forming chamber an rf etching chamber 313 a sputtering chamber 314 as a second film forming chamber and a load lock chamber 315 which are successively connected with each other through gate valves 310a to 310f in the state of air shut off and capable of communicating with each other these chambers are so constructed that they can be evacuated through exhaust systems 316a to 316e respectively here the load lock chamber 311 is a chamber where the substrate atmosphere before deposition.