310 is governed by the values of inductors l 1 and l 2 and capacitors c 1 and c 2 as well as the parasitic gate source and drain source capacitances of transistors m 1 and m 2 for sufficiently small values the frequency of oscillation can be extremely high the oscillator has successfully been tested at about 4 ghz the present invention is thus well suited to applications such as radio frequency u201c rf u201d transmission in which such high frequencies of operation are needed in order to minimize noise within the rf communication bands those of skill in the art will recognize that the voltage generated by converter 300 can be varied by varying the size of inductors l 1 and l 2 since they serve as u201c boost u201d inductors in the present invention the currents flowing through inductors l 1 and l 2 lag the pinch off of transistors m 1 and m 2 u2014 i e currents continue to flow through inductors l 1 and l 2 after their respective transistors cease to conduct this continued current flow causes voltages v ds1 and v ds2 to be boosted above v gen by a factor of two or more for example if voltage v gen is three volts voltages v ds1 and v ds2 will swing from zero volts up to about six volts or even higher those of skill in the art will also recognize that the preferred embodiment of converter 300 described above wherein rectifier 320 is a synchronous rectifier is significantly more efficient than prior art converters since the voltage drop.