formed on the dusting layer and a magnetic fixed layer having an invariable magnetization direction disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier application_number US 201213604236 A description embodiments of an mtj with an iron fe dusting layer located between the free layer and the tunnel barrier are provided with exemplary embodiments being discussed below in detail the addition of the fe dusting layer increases the h c in mtjs that include pma materials the fe dusting layer may be relatively thin for example from about 0 2 angstroms u00e5 to about 2 u00e5 thick in some embodiments a pma mjt stack that includes an fe dusting layer may be grown at room temperature reducing manufacturing complexity for an mram comprising the pma mtjs referring initially to fig1 there is shown a cross sectional view of an mtj with an fe dusting layer in accordance with an exemplary embodiment as is shown the mtj 100 includes a seed layer 101 having free layer 102 grown thereon the seed layer 101 may include for example tantalum ta or tantalum magnesium tamg in some embodiments the free layer 102 may include cobalt iron boron cofeb for example an fe dusting layer 103 is then formed on the free layer 102 next a tunnel barrier 104 is formed on the fe dusting layer 103 wherein the tunnel barrier 104 may include a non magnetic insulating material such as magnesium oxide mgo for example following the formation of the tunnel barrier 104 a fixed layer 105 is formed on top of the tunnel barrier 104 the fixed.