thin film integrated circuit device such as an ic card the thin film integrated circuit according to the present invention does not require back grinding that cause a crack or grinding marks unlike an ic formed from a silicon wafer the irregularity of the film thickness of the thin film integrated circuit depends on the irregularity that is generated on film formation of a semiconductor film or the like therefore the irregularities of the film thickness of the thin film integrated circuit can be reduced to at most about several hundred nanometers which is considerably less than the irregularities that is generated during wafer back grinding further a greatly thin film integrated circuit of the present invention can be stacked in that case each thin film integrated circuit may be electrically connected together by flip chip assembly in particular when fabricating a thin film integrated circuit device whose area is limited like an ic card it is preferred to stack display areas together in this embodiment mode a fabrication method of an el module of a dual emission light emitting device which can be used especially for a second display area will described fig8 a shows a cross section of a dual emission el module fig8 b show a enlarged layered structure of a light emitting element of the el module having an organic compound layer a first transparent conductive film and a second transparent conductive film fig8 a shows a first substrate 800 a first display area 801 a metal oxide 802 a base insulating film 803 a tft 822 a first transparent conductive film electrode 805 an insulator referred to as a bank.