1300 could be formed of a single control gate such as control gate 102 in yet another embodiment the depletion regions 108 112 of the multiplexing device 1300 are formed by schottky barriers metal u2014 semiconductor regions wherein the first and second control gates 102 and 116 are formed of a metal material the depletion width in the schottky barrier is controlled much the same way as the depletion width in a p n junction similarly to the illustration of fig3 it is possible to select nano scaled lines 201 by applying appropriate potentials v 1 and v 2 to the first and second control gates 102 116 respectively and connect it to the micro scaled line or source 226 alternatively schottky barriers metal n or metal p regions may be used to do the connection as well fig1 is a schematic illustration of another multiplexing device 1400 according to the present invention the multiplexing device 1400 is generally similar in function and operation to the multiplexing device 650 of fig7 a and shows an alternative embodiment of the intermediate regions 1480 1481 in order to illustrate an exemplary instance of nano pillar addressing in this embodiment the semiconducting depletion regions 676 677 678 are physically separated through a combination of dielectrics e g oxide nitride high k and electrode semiconducting regions that are referred to as intermediate regions 1480 1481 this allows a reduction in the leakage between the bits and extends the range of the maximum depletion region possible this may also allow low voltage operation though only three semiconducting depletion regions 676 677 678 and two intermediate regions 1480 1481 are shown for illustration purpose only it should be clear that a different number of regions could alternatively be used.