view of nanowires 812 deposited using the u201c edge deposition u2019 effect outline 1004 shows the approximate original outer perimeter of droplet 804 and outline 1008 shows the droplet perimeter at a later point in time after a substantial portion of the droplet has evaporated once droplet 804 is reduced to outline 1008 no nanostructures remain in the droplet in the illustrated embodiment the semiconductor nanowires form a transistor active region between a source and a drain electrode known processing techniques including wax resist printing may be used to form the source and drain electrode fig1 shows a source 1204 and a drain 1208 electrode interconnected by an active region that includes semiconductor nanowires 1212 and 1216 a voltage on a gate electrode underneath the nanowires controls current flow between the source and drain although the structures of fig6 12 were formed using an u201c edge deposition u201d effect the same structures may be formed using a carrier that deposits the nanowires at approximately the droplet center as shown in fig1 14 fig1 shows a side view and fig1 shows a top view of a droplet deposited in the center of gate lines 1304 1308 in fig1 hydrophobic regions 1404 is the area of dielectric 1312 top surface positioned between adjacent gate lines the hydrophobicity results in elongated droplets positioned over gate lines 1304 1308 fig1 17 show fabricating transistor arrays using the described techniques fig1 shows one example of printing a nanowire 1504 array a dielectric layer is patterned such that a hydrophilic that.