2 employs fibers of quartz glass mullite or the like which can become soft after a short time at the melting temperature of the silicon and which can deform at such temperature under the pressure of the silicon resting thereon it is advantageous not to conduct the carrier 2 in an unsupported manner through the heater arrangement it is preferred to employ a graphite plate a graphite fiber net or a graphite film or other suitable graphite surface as a conveying means and supporting surface for the carrier 2 after the molten silicon crystallization the resulting silicon plates 12 and adhering carrier 2 are lifted off from the conveying means and the carrier 2 is separated from the resulting silicon crystal plates 12 the carrier 2 is stripped from silicon plates 12 by using for example a scraper not shown which is integrated into the processing system the carrier 2 can be reemployed in the practice of the process of this invention in fig2 is shown the detail of the transition from the melting zone 10 into the crystallized silicon plates 12 the same reference characters apply as in fig1 the post melting heat treating furnace 7 as well as the pre heating furnace 4 are not shown in the drawing the crystallization front or zone is referenced by numeral 11 in fig3 a plan view is presented showing a modification of the fig2 embodiment.