rotational speed was increased up to 120 rpm thereby throwing the partly remaining in off the wafer cassette and the liquid phase growth operation was ended in fig3 numeral 305 represents the reaction product gas 309 the gas outlet holes and 311 the exhaust port cross sections of the wafers thus obtained were observed with a scanning electron microscope and a transmission electron microscope and it was verified that the epitaxial silicon layers thus grown had a thickness of about 15 u03bcm and also had good crystallinity in the present example an epitaxial layer of si was grown using the apparatus illustrated in fig2 the solvent was sn and the source gas was sih 2 cl 2 the apparatus illustrated in fig2 has a solvent reservoir 214 made of quartz a growth vessel 203 in which a wafer cassette 201 carrying substrates wafers 202 are dipped and quartz pipes 209 a 209 b 210 routed out of one side surface of the solvent reservoir 214 through the growth cell 203 and back to another side surface of the solvent reservoir 214 inside an electric furnace 207 the pipes 209 a 209 b serve as heat exchangers the solvent reservoir 214 and heat exchanger 209 b are further surrounded by a heater block 208 so as to be.