further comprises forming a sidewall spacer on a first side of the vertical active region and a second side of the vertical active region the method further includes removing a portion of the horizontal active region which is not covered by the sidewall spacer the method further includes removing the sidewall spacer the method further includes forming a gate dielectric over at least a first part of the horizontal active region and at least a first part of the vertical active region the method further includes forming a gate electrode over the gate dielectric the method further includes forming a source region and a drain region over at least a second part of the horizontal active region and at least a second part of the vertical active region application_number US 25797305 A description in one aspect a finfet is made with a lateral extension of the channel so as to increase the current drive of the finfet a lateral extension extends adjacent to the fin of finfet along the surface of the substrate the gate that overlies the fin also overlies the lateral extension the lateral extension is defined by a sidewall spacer the fin is formed by an etch that leaves in addition to the fin a floor of semiconductor material that is left over the substrate the sidewall spacer is formed on both sides of the fin to act as a mask in an etch.