material such as silicon oxide silicon nitride or organic material such as polyimide the gate electrode 12 is on the upper surface of the substrate 10 the thin insulating layer is used to isolate the gate electrode 12 from the semiconducting or conducting substrate and can be deposited by thermally grown sputtering chemical vapor deposition solution deposition and printing the gate electrode 12 can be made from a variety of conducting materials such as gold platinum aluminum titanium conducting oxides such as ito or conducting polymers such as polyaniline and polypyrrol or any other conducting material on the upper surface of the gate electrode 12 is a layer of ferroelectric polymer thin film 14 such as p vdf trfe or other ferroelectric polymer thin film which can demonstrate a clear polarization electric field hysteresis loop the thickness of the film could be in the range from approximately 5 nm to approximately 5 u03bcm with the preferred range of approximately 50 nm to approximately 200 nm and more preferably a thickness of approximately 100 nm the remnant polarization of the ferroelectric polymer thin film should be at least larger than 0 1 u03bcc cm 2 with a preferred value of at least 0 5 u03bcc cm 2 while a wide range of remnant polarization values will enable the memory cell larger values are preferred as it is believed the larger values will enable favorable.