desired shape the cross sectional profile of the dielectric material 26 a 26 b 26 c etc is compatible with a deposition of a metallic material as described in the step 54 thereby minimizing undesirable effects of laser ablation such as shunting or undesirably high resistances at step 52 at least a portion of the dielectric material 26 a 26 b 26 c etc in contact with the transparent conductive oxide layer 16 within the interconnection scribe 24 a 24 b 24 c etc is removed to form the gaps 33 the disposition of the photovoltaic device 10 after step 52 is shown in fig1 a and 10 b the dielectric material 26 a 26 b 26 c etc is removed using a laser that ablates the dielectric material 26 a 26 b 26 c etc without affecting and or altering the transparent substrate 14 and or the transparent conductive oxide layer 16 as noted above step 52 is not performed in the embodiment of the invention where the dielectric material 26 a 26 b 26 c etc is deposited and the depositing process forms the gaps 33 at step 54 metallic interconnection material 28 a 28 b 28 c etc is applied to the photovoltaic device the disposition of the photovoltaic device 10 after step 54 is shown in fig1 a and 11 b the metallic interconnection material 28 a 28 b 28 c etc is applied using an inkjet printing process though any other desired process suitable to.