with a thickness of between about 1000 to 4000 angstroms electrode 16 can alternately be formed of a polycide i e a layer of polysilicon with an overlying layer of refractory metal which has been heated to form a surface layer of refractory silicide electrode 16 has a first spacer element 18 of polysilicon on each of the vertical sidewalls thereof and a second spacer element 20 of a dielectric material preferably sio 2 over spacers 18 both the gate electrode 16 and spacers 18 are electrically conductive because they are doped with a suitable impurity for semiconductors a thin dielectric layer 22 is preferably provided on the vertical sidewalls of electrode 16 beneath spacer element 18 lightly doped shallow impurity regions 24 of a dopant opposite in type to the background dopant in substrate are provided beneath layer 22 and spacer elements 18 and 20 note that the regions 24 terminate adjacent the vertical sidewall edge of electrode 16 the impurity concentration of regions 24 is between about 1 u00d7 10 18 cm 3 to 1 u00d7 10 19 cm 3 the depth of regions 24 is between about 500 to 1500 angstroms deeper and more heavily doped impurity regions 26 are located adjacent.