the path of the channels over the substrate as shown in fig2 first metallurgical layer 20 can be formed by any number of known techniques for example a lift off deposition process can be used other techniques include the use of ion cluster beam technology or any directional deposition process it is a significant feature that the deposition of m1 20 not be deposited to fill the pattern formed by the mask 16 following the deposition of m1 the mask 16 is removed by a process suitable to the material of the mask using a mask material suitable to the stud formation process mask 22 is formed on the substrate fig2 if the studs are to be formed by an electroless process an organic resist can be used if selective tungsten is used to form the studs a polyimide or oxide mask or other insulative mask is required after formation of mask 22 selected portions of m1 will be exposed at the locations studs are required since the formation is a selective process mask 22 is a noncritical alignment note that at least one edge of each stud is defined by the initial dielectric 12 channel edges studs 24 are then formed to partially fill the stud vias after removal of mask 22 the entire surface of the substrate is covered be a second dielectric 26 preferably an oxide is deposited and planarized by cmp or by reaction ion etching rie etchback process to planarize the surface of the substrate at a level of the non etchable mask 14 next as shown in fig4 a mask 28 defining the second level m2 of interconnect is deposited over the planarized surface mask 28 is intentionally made larger than the required metallization pattern by the process overlay tolerance next a.