are achieved via multiple blanket implantation procedures using either arsenic or phosphorous ions the number of specific ion implanted veins can be between about 3 to 10 with the deepest vein created via implantation at an energy between about 50 to 100 kev while the shallowest or the vein closest to the top surface of polysilicon layer 13 accomplished at an implantation energy between about 2 to 50 kev the veins of implanted ions located between the deepest and shallowest veins are obtained at energies between about 30 to 80 kev the implant dose for each of implanted veins 14 is between about 2e13 to 7e17 atoms cm 2 while the intrinsic or non implanted space between implanted vein region in polysilicon layer 13 is between about 100 to 5000 angstroms an anneal cycle can now be employed to activate the implanted ions the formation of storage node structure 23 featuring a necked profile is next addressed and schematically shown in fig5 photoresist shape 15 is formed on the top surface of polysilicon layer 13 and used as a etch mask to define storage node structure 23 a critical dry etch procedure performed at specific conditions is next employed to etch polysilicon layer 13 featuring an etch rate for portions of polysilicon comprised with ion implanted veins 14 greater than the etch rate for intrinsic regions of polysilicon located between ion implanted veins 14 the dry etch procedure is performed using an.