same manner as the substrate 4 described in the first embodiment a cu film was deposited to a thickness of 500 nm but no particular defects were observed on the substrate further as shown in the following table 3 accumulation of oxygen occurred on the filter when the flow rate of the electrolyte was 5 l min in the second embodiment whereas the accumulation of oxygen was not generated in this embodiment even if the flow rate of the electrolyte was 1 l min thus in this example oxygen can be removed more efficiently thereby providing a merit of high degree of freedom in setting the flow rate of the electrolyte also in this embodiment the distribution of the thickness in the surface of the cu film deposited to a thickness of 500 nm on an 8 inch wafer had a standard deviation average value of 6 thereby showing an improvement in the same manner as in the second embodiment as described above according to the electroplating apparatus 100 c of this embodiment the oxygen captured by the filter can be more efficiently removed as compared with the electroplating apparatus of the first and second embodiments thereby effectively avoiding disturbance of the electric field distribution and the flow of the electrolyte and providing a still better thickness distribution of the film formed on the substrate referring to fig6 an electroplating apparatus 100 d according to the fourth embodiment will be described here like or corresponding parts in the electroplating.