layers wetting layers and seed layers of conductive materials to the surface of a semiconductor feature requires tailoring of the layer to the shape of the feature if optimum feature performance is to be achieved tailoring of such thin layers using physical vapor deposition pvd techniques has been of particular interest in recent years due to the many desirable properties of materials applied using pvd ion deposition sputtering also known as imp has been used to enable pvd application of material layers in features having small feature size and high aspect ratios however ion deposition sputtering can have adverse side effects in terms of erosion via sputtering of underlying layers which are contacted by the ion deposition sputtered material further the material eroded away from the underlying layer can contaminate adjacent surfaces of the feature the present method for applying an ion deposition sputtered sculptured layer of material on a semiconductor feature surface avoids sputtering of the substrate on which the ion deposition layer is deposited the method is particularly useful in the deposition of barrier layers at the bottom of a via where contamination from adjacent surfaces during deposition of the barrier layer can ultimately increase resistivity of the contact the method is.