under the microscope was good ethyl lactate stripping was 0 09 application cure on quartz wafers using identical conditions gave a 193 nm absorbance of 0 129 and a 193 nm od of 1 96 the vase was used to measure the 193 nm n and k values for cured film with the respective numbers being 1 677 and 0 0669 this property was checked using seven different solvents acetone cyclohexanone 2 heptanone pgme ethyl lactate pgmea and 1 methyl 2 pyrrolidinone the percent re dissolution varied between 9 7 and 11 0 the middle layer composition was not spin bowl compatible using a trion etcher with o 2 as the etching gas the middle layer prepared in part 2 of this example etched about 68 6 slower than the alkyl silane standard hard mask dh2333 29 i e the etch selectivity for the former relative to the latter was 0 30 0 32 the data is shown in fig5 a trilayer stack comprised of a thin layer 200 nm of resist gars8107a10 on top of a 658 u00e5 layer of the middle layer prepared in part 1 of this example on top of a bottom anti reflective coating bakc dh2333 42 a bottom anti reflective coating with the binder material being an aliphatic.