section 30 a and a lower transistor section 30 b on a semiconductor die 21 the two sections are separated by a dummy silicon pillar 32 each section 30 comprises a plurality of u201c racetrack u201d shaped transistor structures or segments each transistor segment comprises an elongated ring or oval that includes a silicon pillar 17 surrounded on opposite sides by dielectric regions 15 a amp 15 b pillar 17 itself extends laterally in the x and y directions to form a continuous elongated racetrack shaped ring or oval disposed within dielectric regions 15 a amp 15 b are respective gate members 18 a amp 18 b and field plates 19 a amp 19 b field plate 19 a comprises a single elongated member that terminates on either end in a rounded fingertip area field plate 19 b on the other hand comprises an enlarged ring or oval that encircles pillar 17 field plates 19 b of adjacent racetrack structures are shown merged such that they share a common member on a side by way of reference the cross sectional view of fig1 may be taken through cut lines a a u2032 of the example layout of fig2 a it should be understood that in the example of fig2 a each of the racetrack transistor segments has a width i e pitch in the y direction of approximately 13 u03bcm a length in the x direction in a range of about 400 u03bcm to 1000 u03bcm with a pillar height of about 60 u03bcm in other words the length to width ratio of the individual racetrack transistor segments comprising sections 30 a amp 30 b is.