materials including acrylic and epoxy based photoresists such as the photoresist materials available from clariant corporation of somerville n j under the trade names az4620 and az1512 other photoresist materials are available from shell chemical company of houston tex under the trade name epon su8 and photoresist materials available from olin hunt specialty products inc a subsidiary of the olin corporation of west paterson n j under the trade name waycoat a particularly preferred photoresist material includes from about 10 to about 20 percent by weight difunctional epoxy compound less than about 4 5 percent by weight multifunctional crosslinking epoxy compound and from about 1 to about 10 percent by weight of a photoinitiator capable of generating a cation and from about 20 to about 90 percent by weight non photoreactive solvent as described in u s pat no 5 907 333 to patil et al the disclosure of which is incorporated by reference herein as if fully set forth as shown in fig2 c and described in detail above an ink feed slot or ink via 20 is abrasively formed in the silicon wafer 10 first layer 26 and second layer 18 after forming the ink feed slot or via 20 the substantially water soluble protective layer 18 containing imbedded abrasive material is removed from the first layer 26 preferably by dissolving the protective layer 18 in a water washing procedure the resulting wafer as shown in fig2 d preferably includes a first layer containing a silane material 12 and a photoresist material 24 according to fig3 a 3d a third embodiment of the invention will now be described according to this embodiment the first layer 24 is derived from a photoresist material as set forth above.