is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step by repetitive cycles a composite integrated film is produced in a preferred embodiment the depositions from the molecular precursor are metals and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions and to oxidize or nitridize the metal surface in subsequent layers a variety of alternative chemistries are taught for different films and hardware combinations to practice the invention are taught as well application_number US 21391402 A description the inventor has developed an enhanced variation of ald which alters the conventional surface preparation steps of ald and overcomes the problems of conventional ald producing high throughput without compromising quality the inventor terms the new and unique process radical assisted sequential cvd ras cvd 0040 fig1 is a generalized diagram of a system 11 for practicing ras cvd according to an embodiment of the present invention in this exemplary system a deposition chamber 13 has a heatable hearth for supporting and heating a substrate 19 to be coated and a gas distribution apparatus such as a showerhead 15 for delivering gaseous species to the substrate surface to be coated substrates are introduced and removed from chamber 13 via a valve 21 and substrate handling apparatus not shown gases are supplied from a gas sourcing and pulsing apparatus 23 which includes metering and.