channel after uv curing of the nitride film may see the tensile stress in the channel drop to a final tensile stress of about 470 mpa after contact hole etching through the uv cured nitride film however performing uv curing of the nitride film after contact hole etching yields a higher nitride film tensile stress and corresponding channel tensile stress for the same example fet having the particular geometry the final tensile stress induced in the channel by a nitride film that is uv cured after contact hole etching may be about 520 mpa showing an increase in channel tensile stress of about 10 over the example fet with the nitride film that is uv cured before contact hole etching fig1 illustrates an embodiment of a method 100 for tensile stress enhancement of a nitride film by uv curing after contact hole etch fig1 is discussed with respect to fig2 7 in block 101 a plurality of fet devices are formed on a substrate and then in block 102 a nitride film 208 is formed over the plurality of fet devices that were formed in block 101 the plurality of fet devices are formed on a substrate 201 as shown in fig2 the substrate 201 may include any appropriate substrate that may be used for cmos device formation such as silicon the fet devices located on substrate 201 include source drain silicide.