resistance of about 10 ohms square or lower and form an ohmic contact to the subsequently deposited semiconductor layer 13 optionally the transparent conductive oxide can be a conducting cermet layer as taught in u s pat no 4 162 505 and incorporated herein by reference a conductive glass suitable to function as the transparent substrate 11 with tco layer 12 having stannic oxide fused to its surface is commercially available under trade names such as 34 ec 34 and 34 nesa 34 the stannic oxide lamination and like materials are deposited by spraying a solution of stannic chloride pentahydrate and formaldehyde solution onto a glass substrate heated to about 500 u00b0 c by selecting the thickness of the tco layer 12 the transparent electrode can also function as an integral antireflection coating a semiconductor layer 13 is deposited on the transparent conductive oxide 12 and forms an ohmic contact thereto the semiconductor layer 13 is cadmium sulfide optionally layer 13 can be selected from semiconductor materials such as zn x cd 1 x s and like materials the semiconductor layer 13 is from about 0 2 to 40 micrometers u03bcm in thickness the cadmium sulfide and like semiconductor materials are n type layers 12 and 13 are deposited by methods known in the art such as solution coating or cosputtering as taught in u s pat no 4 143 235 incorporated herein by reference or u s application ser no 197 414 filed oct 16 1980 and incorporated herein by reference the.