jar 14 for example by swiveling it into place or statically suspending it in the bell jar an inert gas valve 12 is subsequently opened the inert gas then flows upward through the raised bell jar 14 in order to avoid backward diffusion the flow rate of inert gas through the spray mechanism 13 is preferably at least 0 5 m 3 h more preferably from 3 m 3 h to 10 m 3 h depending on the line cross section being used this method is continued without interruption until the deposited polycrystalline silicon has been fully removed from the deposition reactor and thin rods and electrodes for the next deposition have been installed immediately before closing the reactor for the start of the next deposition the device 13 for inert gas flushing of the bell jar 14 is removed for example by unsuspending it or swiveling it away and the inert gas valve 12 is closed after the reactor has been closed by lowering the bell jar the inert gas valves 9 and 10 are closed the stop valves 7 and 8 for the waste gas 6 and the reactants 1 are reopened the deposition reactor is now ready for the next deposition which is carried out as known in the prior art the following examples serve to explain the invention further the characterization of the polysilicon in respect of resistance and dopant concentration was respectively carried out according to the prior art to this end samples were taken from the polycrystalline silicon according to the standard semi mf 1723 1104 23 10 2003 and were prepared by float zone fz pulling the resistance was determined according to standard semi mf.