the periphery circuit region 104 respectively the opening 32 a expose the sacrificial layer 26 in the opening 22 a while the opening 32 b expose the sacrificial layer 26 in the opening 22 b subsequently using the patterned third dielectric layer 32 as a hard mask a dry etching process or the like is performed to completely remove the sacrificial layer 26 from the openings 22 a and 22 b thereby exposing the electrode material layer 24 in the openings 22 a and 22 b as shown in fig4 a contact material layer 40 is then deposited onto the substrate 10 since the dimensions of the openings 22 a and 22 b are usually very small it is preferably to use ald process to deposit the contact material layer 40 in order to make sure that the openings 22 a and 22 b are completely filled and no voids or gaps are formed therein according to the embodiment the contact material layer 40 may be composed of titanium titanium nitride or the like as shown in fig5 after the deposition of the contact material layer 40 a cmp process may be carried out to remove excess contact material layer 40 outside the openings 22 a and 22 b preferably the third dielectric layer 32 is also removed to.