implanted into the whole first area p type ions are implanted into some part of the second area referring to fig4 g n type ions are implanted into the whole first area p type ions are implanted into the whole second area and some part of the first area referring to fig4 h n type ions are implanted into the whole first area and some part of the second area p type ions are implanted into the whole second area referring to fig4 i n type ions are implanted into some part of the first area p type ions are implanted into the whole second area subsequently an annealing process is performed for each standard pattern with the ion implantation areas resistance of each standard pattern is then measured more cases of misalignment may be made although the present invention provides eight cases of misalignment of ion implant masks for example in each case of the presented misalignments more various misalignment configurations can be conceived by diversifying deviation of the ion implant mask by measuring the resistance values for the nine cases it is possible to detect whether the ion implantation area is misaligned or not in addition if an ion implantation area was misaligned the degree and direction of deviation of the ion implant mask can be calculated in detail resistance of.