Vacuum-free solution-based metallization (VSM) of a-IGZO using trimethylaluminium solution.This research demonstrates a method to reduce the resistance of amorphous indium-gallium-zinc-oxide (a-IGZO) using a "vacuum-free solution-based metallization" (VSM) process, which revolutionizes the metallization process thanks to its simplicity, by simply dipping the a-IGZO into trimethyl aluminium (TMA, (CH3)3Al) solution.  From the XPS results, it was found that oxygen vacancies were generated after the VSM process, resulting in the enhanced conductivity.  By utilizing the VSM process, self-aligned top-gate (SATG) a-IGZO thin-film-transistors (TFTs) were successfully fabricated, and to provide an explanation for the mechanism, X-ray photoelectron spectroscopy (XPS) was employed.
VSM
Vacuum-free solution-based metallization (VSM) of a-IGZO using trimethylaluminium solution.This research demonstrates a method to reduce the resistance of amorphous indium-gallium-zinc-oxide (a-IGZO) using a "vacuum-free solution-based metallization" (VSM) process, which revolutionizes the metallization process thanks to its simplicity, by simply dipping the a-IGZO into trimethyl aluminium (TMA, (CH3)3Al) solution.  From the XPS results, it was found that oxygen vacancies were generated after the VSM process, resulting in the enhanced conductivity.  By utilizing the VSM process, self-aligned top-gate (SATG) a-IGZO thin-film-transistors (TFTs) were successfully fabricated, and to provide an explanation for the mechanism, X-ray photoelectron spectroscopy (XPS) was employed.
VSM
From the XPS results, it was found that oxygen vacancies were generated after the VSM process, resulting in the enhanced conductivity.  By utilizing the VSM process, self-aligned top-gate (SATG) a-IGZO thin-film-transistors (TFTs) were successfully fabricated, and to provide an explanation for the mechanism, X-ray photoelectron spectroscopy (XPS) was employed.
XPS