Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO3 -SrSnO3 Solid-Solution Based Thin Film Transistors.The transparent oxide semiconductor (TOS) with large bandgap (Eg ≈ 4 eV) based thin-film transistors (TFTs) showing both high carrier mobility and UV-visible transparency has attracted increasing attention as a promising component for next generation optoelectronics.  Here, it is demonstrated that the electric field thermopower (S) modulation method addresses this problem by combining with the standard volume carrier concentration (n3D ) dependence of S measurements. 
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