Nanoscale multilevel switching in Ge2Sb2Te5 thin film with conductive atomic force microscopy.We demonstrate three-level data storage in amorphous Ge2Sb2Te5 (GST) thin film by conductive atomic force microscopy (C-AFM).  Due to the high resolution and current sensitivity of AFM, the electrical properties of GST are investigated in the nanoscale.  By applying an electric field between an AFM probe tip and the GST surface, well-resolved threshold switching and memory switching are obtained successively in a current-voltage sweeping. 
AFM
Nanoscale multilevel switching in Ge2Sb2Te5 thin film with conductive atomic force microscopy.We demonstrate three-level data storage in amorphous Ge2Sb2Te5 (GST) thin film by conductive atomic force microscopy (C-AFM). 
C-AFM