Graphene growth through a recrystallization process in plasma enhanced chemical vapor deposition.Thermal chemical vapor deposition (TCVD) is the current method of choice to fabricate high quality, large area graphene films on catalytic copper substrates.  The efficient, plasma-induced dissociation of the precursor molecules results in an activation energy of 2.2 eV for the growth rate in PECVD, which is reduced by almost a factor of 2 compared to TCVD growth in the same reactor. 
TCVD
We used plasma enhanced chemical vapor deposition (PECVD) to fabricate high quality graphene films at various temperatures.  The efficient, plasma-induced dissociation of the precursor molecules results in an activation energy of 2.2 eV for the growth rate in PECVD, which is reduced by almost a factor of 2 compared to TCVD growth in the same reactor. 
PECVD
We used plasma enhanced chemical vapor deposition (PECVD) to fabricate high quality graphene films at various temperatures.  The efficient, plasma-induced dissociation of the precursor molecules results in an activation energy of 2.2 eV for the growth rate in PECVD, which is reduced by almost a factor of 2 compared to TCVD growth in the same reactor. 
PECVD
Almost defect-free graphene is prepared with negligible (I D/I G < 0.1) contributions of the D peak in Raman spectroscopy and with a sheet resistance down to 470 Ω/sq.
Raman spectroscopy