In this study, highly ordered InGaN/GaN multiple-quantum-well nanorod-based photoelectrodes have been fabricated by a soft UV-curing nano-imprint lithography and a top-down etching technique, which improve the incident photon conversion efficiency (IPCE) from 16% (planar structure) to 42% (@ wavelength = 400 nm). 
UV-curing nano-imprint lithography
In this study, highly ordered InGaN/GaN multiple-quantum-well nanorod-based photoelectrodes have been fabricated by a soft UV-curing nano-imprint lithography and a top-down etching technique, which improve the incident photon conversion efficiency (IPCE) from 16% (planar structure) to 42% (@ wavelength = 400 nm). 
top-down etching technique
Furthermore, SiO2/Si3N4 dielectric distributed Bragg reflectors are employed to further improve the IPCE up to 60%. 
SiO2/Si3N4 dielectric distributed Bragg reflectors