An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFET.In this paper, we demonstrate the characteristics of the floating body effect of poly-silicon with grain boundary by SENTAURUS™ TCAD simulation. 
SENTAURUS
An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFET.In this paper, we demonstrate the characteristics of the floating body effect of poly-silicon with grain boundary by SENTAURUS™ TCAD simulation. 
TCAD simulation