Defect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation.We study with Raman spectroscopy the influences of He(+) bombardment and the environment on beam-induced defects in graphene encapsulated in hexagonal boron nitride (h-BN). 
Raman spectroscopy
Defect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation.We study with Raman spectroscopy the influences of He(+) bombardment and the environment on beam-induced defects in graphene encapsulated in hexagonal boron nitride (h-BN). 
He(+) bombardment
Defect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation.We study with Raman spectroscopy the influences of He(+) bombardment and the environment on beam-induced defects in graphene encapsulated in hexagonal boron nitride (h-BN).  We conclude that unbound atoms ("interfacials") between the sp(2)-layers of graphene and h-BN promote self-healing of the beam-induced lattice damage and that nitrogen-carbon exchange leads to n-doping of graphene.
h-BN
We show for the first time experimentally the autonomous behavior of the D' defect Raman peak: in contrast to the D defect peak, the D' defect peak is sensitive to the local environment. 
D' defect peak
We show for the first time experimentally the autonomous behavior of the D' defect Raman peak: in contrast to the D defect peak, the D' defect peak is sensitive to the local environment. 
D defect peak