sentences:  First-generation DRAM ICs (those with capacities of 1 kbit), of which the first was the Intel 1103, used a three-transistor, one-capacitor (3T1C) DRAM cell.By the second-generation, the requirement to increase density by fitting more bits in a given area, or the requirement to reduce cost by fitting the same amount of bits in a smaller area, lead to the almost universal adoption of the 1T1C DRAM cell, although a couple of devices with 4 and 16 kbit capacities continued to use the 3T1C cell for performance reasons (Kenner, p. 6).These performance advantages included, most significantly, the ability to read the state stored by the capacitor without discharging it, avoiding the need to write back what was read out (non-destructive read).