sentences:  This gives 1T DRAM cells the greatest density as well as allowing easier integration with high-performance logic circuits since they are constructed with the same SOI process technologies.Refreshing of cells remains necessary, but unlike with 1T1C DRAM, reads in 1T DRAM are non-destructive; the stored charge causes a detectable shift in the threshold voltage of the transistor.Performance-wise, access times are significantly better than capacitor-based DRAMs, but slightly worse than SRAM.