ترانزیستور  2P901A روسی 2P901A 2901 2P901A silicon planar fieldeffect transistors with an insulated gate and an induced ntype generator channel Designed for use in amplifiers and generators in the range of short and ultrashort wavelengths Used to operate as part of specialpurpose electronic equipment Available in a metalceramic case with rigid leads and a mounting screw They are marked with a alphanumeric code on the transistor body Transistor weight no more than 60 g Housing type KT42 TO60 Transistors 2P901A5 2P901B5 are produced in the form of crystals with contact pads without a crystal holder and without leads for use in hybrid integrated circuits The type of device is indicated on the label Crystal mass is not more than 000012 g Quality category VP OS Technical conditions    acceptance of VP ZhK3365243TU    acceptance of OS ZhK3365243TU aA0339190TU Foreign analogue VMP1 BFL522  Guaranteed shelf life is 25 years from the date of manufacture Warranty operating time    25000 hours  in the modes and conditions allowed by the specifications    50000 hours  in light mode Warranty operating time is calculated within the warranty storage period  Main technical characteristics of the 2P901A transistor  Transistor structure with an insulated gate with an induced nchannel  Rsi t max  Maximum drainsource power dissipation with heat sink 20 W  Usi max  Maximum drainsource voltage 70 V  U max  Maximum gatedrain voltage 85 V  Uzi max  Maximum gatesource voltage 30 V  I  Drain current constant 4 A  Is start  Initial drain current no more than 200 mA  Ic rest  Residual drain current no more than 50 mA  S  Characteristic slope 50 160 mAV 20V 05A  C12i  Feedback capacitance in a circuit with a common source during a short circuit at the AC input no more than 10 pF  Kr  Power gain no less than 7 dB at a frequency of 100 MHz