ترانزیستور  2TS613B روسی   2TS613B 2613 Transistor matrices 2TS613B consist of four electrically insulated silicon epitaxialplanar structures of npn switching highfrequency transistors Designed for use in highspeed pulse and switching devices various cascades of computers and other electronic equipment Available in a metalglass case with flexible leads The type of device is indicated on the housing The mass of the matrix is no more than 4 g Quality category VP OS Technical conditions    acceptance 5 Ya53456000TU    acceptance 9 Ya53456000TU aA0339190TU The minimum shelf life is 25 years from the date of acceptance and in case of rechecking of the product  from the date of rechecking  Main technical characteristics of the transistor assembly 2TS613B  Structure of the transistor assembly npn   max  Constant collector power dissipation 800 mW  fgr  Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter not less than 200 MHz  Ukbo max  Maximum collectorbase voltage at a given collector reverse current and emitter open circuit 60 V  Uebo max  Maximum emitterbase voltage at a given emitter reverse current and open collector circuit 4 V  I max  Maximum permissible direct collector current 400 mA  I and max  Maximum permissible pulse current of the collector 800 mA  Ikbo  Reverse collector current  current through the collector junction at a given reverse collectorbase voltage and open emitter terminal no more than 5 A 60V  h21e  Static current transfer coefficient of the transistor for circuits with a common emitter 40 200    Capacitance of the collector junction no more than 15 pF  Rke us  Saturation resistance between collector and emitter no more than 25 Ohm  trac  Resorption time no more than 100 ns