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2. Methodology:

The MOSFETs were fabricated using a standard process on an n-type 4H-SiC substrate with epitaxial layers. The gate oxide was deposited by dry oxidation, and the gate electrode was formed using a standard lift-off technique. The electrical characteristics of MOSFETs, including the threshold voltage, sub-threshold slope, and on-state resistance, were measured using a semiconductor parameter analyzer. The thermal performance of the MOSFETs was evaluated using a thermal camera.
1. What substrate was used for fabricating the MOSFETs?
2. How was the gate oxide deposited?
3. What technique was used for forming the gate electrode?
4. What were some electrical characteristics of the MOSFETs that were measured?
5. How was the thermal performance of the MOSFETs evaluated?